KR20090117982A - 고체 촬상 장치의 제조 방법 및 전자 기기의 제조 방법 - Google Patents

고체 촬상 장치의 제조 방법 및 전자 기기의 제조 방법 Download PDF

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Publication number
KR20090117982A
KR20090117982A KR1020090037075A KR20090037075A KR20090117982A KR 20090117982 A KR20090117982 A KR 20090117982A KR 1020090037075 A KR1020090037075 A KR 1020090037075A KR 20090037075 A KR20090037075 A KR 20090037075A KR 20090117982 A KR20090117982 A KR 20090117982A
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South Korea
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chip
imaging device
opening
manufacturing
solid
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KR1020090037075A
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Korean (ko)
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겐타로 아키야마
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소니 가부시끼 가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020090037075A 2008-05-12 2009-04-28 고체 촬상 장치의 제조 방법 및 전자 기기의 제조 방법 Ceased KR20090117982A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008125189A JP5422914B2 (ja) 2008-05-12 2008-05-12 固体撮像装置の製造方法
JPJP-P-2008-125189 2008-05-12

Publications (1)

Publication Number Publication Date
KR20090117982A true KR20090117982A (ko) 2009-11-17

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090037075A Ceased KR20090117982A (ko) 2008-05-12 2009-04-28 고체 촬상 장치의 제조 방법 및 전자 기기의 제조 방법

Country Status (6)

Country Link
US (1) US8076172B2 (enExample)
EP (1) EP2120264B1 (enExample)
JP (1) JP5422914B2 (enExample)
KR (1) KR20090117982A (enExample)
CN (1) CN101582393B (enExample)
TW (1) TWI409969B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
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KR20110060796A (ko) * 2009-11-30 2011-06-08 소니 주식회사 접합 기판의 제조 방법, 접합 기판, 고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라
KR101431309B1 (ko) * 2011-05-20 2014-08-20 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 본딩 패드 및 실드 구조를 갖는 반도체 디바이스 및 이의 제조 방법
KR20150055887A (ko) * 2013-11-14 2015-05-22 삼성전자주식회사 이미지 센서 및 이를 제조하는 방법
KR20160028435A (ko) * 2012-04-12 2016-03-11 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 이미지 센서 제조 방법

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JP6173410B2 (ja) * 2010-06-30 2017-08-02 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
JP5693060B2 (ja) 2010-06-30 2015-04-01 キヤノン株式会社 固体撮像装置、及び撮像システム
JP5843475B2 (ja) * 2010-06-30 2016-01-13 キヤノン株式会社 固体撮像装置および固体撮像装置の製造方法
US8872298B2 (en) 2010-07-01 2014-10-28 Samsung Electronics Co., Ltd. Unit pixel array of an image sensor
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JP2012084609A (ja) * 2010-10-07 2012-04-26 Sony Corp 固体撮像装置とその製造方法、及び電子機器
JP2012084608A (ja) * 2010-10-07 2012-04-26 Sony Corp 固体撮像装置とその製造方法、並びに電子機器
JP5640630B2 (ja) * 2010-10-12 2014-12-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP5857399B2 (ja) * 2010-11-12 2016-02-10 ソニー株式会社 固体撮像装置及び電子機器
JP5541137B2 (ja) 2010-12-15 2014-07-09 ソニー株式会社 撮像装置、電子機器、太陽電池、および、撮像装置の製造方法
US9165970B2 (en) 2011-02-16 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Back side illuminated image sensor having isolated bonding pads
JP2012175078A (ja) * 2011-02-24 2012-09-10 Sony Corp 固体撮像装置、および、その製造方法、電子機器、半導体装置
CN102760742B (zh) * 2011-04-26 2015-08-05 欣兴电子股份有限公司 电子装置及其制法
JP5826511B2 (ja) * 2011-04-26 2015-12-02 株式会社東芝 固体撮像装置及びその製造方法
US8664736B2 (en) 2011-05-20 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad structure for a backside illuminated image sensor device and method of manufacturing the same
US9013022B2 (en) * 2011-08-04 2015-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chips
JP5970826B2 (ja) * 2012-01-18 2016-08-17 ソニー株式会社 半導体装置、半導体装置の製造方法、固体撮像装置および電子機器
KR101934864B1 (ko) * 2012-05-30 2019-03-18 삼성전자주식회사 관통 실리콘 비아 구조물 및 그 제조 방법, 이를 포함하는 이미지 센서 및 그 제조 방법
JP6178561B2 (ja) * 2012-11-15 2017-08-09 キヤノン株式会社 固体撮像装置の製造方法
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JP6048483B2 (ja) * 2014-12-10 2016-12-21 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
TWI616692B (zh) * 2014-12-29 2018-03-01 鴻海精密工業股份有限公司 光纖連接器及光耦合透鏡
KR102720747B1 (ko) * 2015-03-12 2024-10-23 소니그룹주식회사 촬상 장치, 제조 방법 및 전자 기기
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KR20110060796A (ko) * 2009-11-30 2011-06-08 소니 주식회사 접합 기판의 제조 방법, 접합 기판, 고체 촬상 장치의 제조 방법, 고체 촬상 장치 및 카메라
US9530687B2 (en) 2009-11-30 2016-12-27 Sony Corporation Method of manufacturing bonded substrate, bonded substrate, method of manufacturing solid-state imaging apparatus, solid-state imaging apparatus, and camera
US10217791B2 (en) 2009-11-30 2019-02-26 Sony Corporation Method of manufacturing bonded substrate, bonded substrate, method of manufacturing solid-state imaging apparatus, solid-state imaging apparatus, and camera
KR101431309B1 (ko) * 2011-05-20 2014-08-20 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 본딩 패드 및 실드 구조를 갖는 반도체 디바이스 및 이의 제조 방법
KR20160028435A (ko) * 2012-04-12 2016-03-11 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 이미지 센서 제조 방법
KR20150055887A (ko) * 2013-11-14 2015-05-22 삼성전자주식회사 이미지 센서 및 이를 제조하는 방법

Also Published As

Publication number Publication date
JP5422914B2 (ja) 2014-02-19
JP2009277732A (ja) 2009-11-26
CN101582393A (zh) 2009-11-18
TWI409969B (zh) 2013-09-21
EP2120264A2 (en) 2009-11-18
US20090280596A1 (en) 2009-11-12
EP2120264A3 (en) 2012-02-22
CN101582393B (zh) 2012-10-17
US8076172B2 (en) 2011-12-13
TW201001739A (en) 2010-01-01
EP2120264B1 (en) 2013-01-30

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