JP5418421B2 - 液晶表示素子 - Google Patents

液晶表示素子 Download PDF

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Publication number
JP5418421B2
JP5418421B2 JP2010140079A JP2010140079A JP5418421B2 JP 5418421 B2 JP5418421 B2 JP 5418421B2 JP 2010140079 A JP2010140079 A JP 2010140079A JP 2010140079 A JP2010140079 A JP 2010140079A JP 5418421 B2 JP5418421 B2 JP 5418421B2
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JP
Japan
Prior art keywords
electrode
thin film
film transistor
layer
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010140079A
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English (en)
Japanese (ja)
Other versions
JP2012003165A (ja
JP2012003165A5 (enExample
Inventor
やよい 中村
伸一 下牧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP2010140079A priority Critical patent/JP5418421B2/ja
Priority to US13/159,669 priority patent/US8395717B2/en
Priority to CN201110167250.0A priority patent/CN102289118B/zh
Publication of JP2012003165A publication Critical patent/JP2012003165A/ja
Publication of JP2012003165A5 publication Critical patent/JP2012003165A5/ja
Application granted granted Critical
Publication of JP5418421B2 publication Critical patent/JP5418421B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP2010140079A 2010-06-21 2010-06-21 液晶表示素子 Expired - Fee Related JP5418421B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010140079A JP5418421B2 (ja) 2010-06-21 2010-06-21 液晶表示素子
US13/159,669 US8395717B2 (en) 2010-06-21 2011-06-14 Liquid crystal display apparatus
CN201110167250.0A CN102289118B (zh) 2010-06-21 2011-06-21 液晶显示元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010140079A JP5418421B2 (ja) 2010-06-21 2010-06-21 液晶表示素子

Publications (3)

Publication Number Publication Date
JP2012003165A JP2012003165A (ja) 2012-01-05
JP2012003165A5 JP2012003165A5 (enExample) 2012-11-15
JP5418421B2 true JP5418421B2 (ja) 2014-02-19

Family

ID=45328354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010140079A Expired - Fee Related JP5418421B2 (ja) 2010-06-21 2010-06-21 液晶表示素子

Country Status (3)

Country Link
US (1) US8395717B2 (enExample)
JP (1) JP5418421B2 (enExample)
CN (1) CN102289118B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI518915B (zh) 2012-03-30 2016-01-21 群康科技(深圳)有限公司 陣列基板結構與顯示面板及其製造方法
CN103365005A (zh) * 2012-03-30 2013-10-23 群康科技(深圳)有限公司 阵列基板结构、阵列基板结构的制造方法与显示面板
CN102751300B (zh) * 2012-06-18 2014-10-15 北京京东方光电科技有限公司 一种非晶硅平板x射线传感器的制作方法
CN103199060B (zh) * 2013-02-17 2015-06-10 京东方科技集团股份有限公司 一种薄膜晶体管阵列基板及其制作方法及显示装置
JP6124668B2 (ja) 2013-04-26 2017-05-10 三菱電機株式会社 薄膜トランジスタ基板およびその製造方法
KR102081827B1 (ko) * 2013-07-02 2020-04-16 삼성디스플레이 주식회사 액정 표시 장치
JP2015072339A (ja) * 2013-10-02 2015-04-16 株式会社ジャパンディスプレイ 液晶表示装置
CN104865761B (zh) * 2014-02-25 2018-06-08 群创光电股份有限公司 显示面板及显示装置
CN104062788A (zh) * 2014-07-10 2014-09-24 信利半导体有限公司 像素结构、阵列基板及液晶显示面板
JP2021128271A (ja) * 2020-02-14 2021-09-02 株式会社ジャパンディスプレイ 表示装置及び表示装置用アレイ基板
CN112599032A (zh) * 2020-12-29 2021-04-02 Oppo广东移动通信有限公司 显示屏、显示屏组件及电子装置
CN114879394B (zh) * 2022-04-29 2024-04-09 深圳市华星光电半导体显示技术有限公司 一种显示面板的制造方法及显示面板

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3145931B2 (ja) 1996-08-26 2001-03-12 日本電気株式会社 薄膜トランジスタ
JP3716651B2 (ja) 1998-10-20 2005-11-16 カシオ計算機株式会社 表示装置
JP3107075B2 (ja) * 1998-12-14 2000-11-06 日本電気株式会社 液晶表示装置
JP4395612B2 (ja) 2001-09-26 2010-01-13 カシオ計算機株式会社 液晶表示素子
JP4102925B2 (ja) 2003-05-15 2008-06-18 カシオ計算機株式会社 アクティブマトリックス型液晶表示装置
JP2005045017A (ja) * 2003-07-22 2005-02-17 Sharp Corp アクティブマトリクス基板およびそれを備えた表示装置
KR101001986B1 (ko) * 2003-10-30 2010-12-16 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
JP4571845B2 (ja) * 2004-11-08 2010-10-27 シャープ株式会社 液晶表示装置用基板及びそれを備えた液晶表示装置及びその駆動方法
JP4687259B2 (ja) * 2005-06-10 2011-05-25 カシオ計算機株式会社 液晶表示装置
JP2007294709A (ja) * 2006-04-26 2007-11-08 Epson Imaging Devices Corp 電気光学装置、電子機器、および電気光学装置の製造方法
CN100495177C (zh) * 2006-04-30 2009-06-03 北京京东方光电科技有限公司 一种tft lcd阵列基板器件结构及其制造方法
JP4349406B2 (ja) * 2006-08-24 2009-10-21 セイコーエプソン株式会社 電気光学装置用基板及び電気光学装置、並びに電子機器
JP4577318B2 (ja) * 2007-03-02 2010-11-10 セイコーエプソン株式会社 液晶装置の製造方法
JP5245448B2 (ja) 2008-02-22 2013-07-24 カシオ計算機株式会社 有機エレクトロルミネセンス表示装置及びその製造方法
JP4661913B2 (ja) * 2008-07-19 2011-03-30 カシオ計算機株式会社 液晶表示装置
JP4367566B2 (ja) * 2008-09-08 2009-11-18 カシオ計算機株式会社 アクティブマトリクスパネル

Also Published As

Publication number Publication date
US8395717B2 (en) 2013-03-12
JP2012003165A (ja) 2012-01-05
CN102289118A (zh) 2011-12-21
CN102289118B (zh) 2014-08-06
US20110310340A1 (en) 2011-12-22

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