CN102289118B - 液晶显示元件 - Google Patents
液晶显示元件 Download PDFInfo
- Publication number
- CN102289118B CN102289118B CN201110167250.0A CN201110167250A CN102289118B CN 102289118 B CN102289118 B CN 102289118B CN 201110167250 A CN201110167250 A CN 201110167250A CN 102289118 B CN102289118 B CN 102289118B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- electrode
- thin film
- film transistor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 claims abstract description 76
- 239000003990 capacitor Substances 0.000 claims abstract description 46
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 claims 3
- 238000005530 etching Methods 0.000 abstract description 24
- 239000011810 insulating material Substances 0.000 abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 36
- 239000000758 substrate Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 229910052750 molybdenum Inorganic materials 0.000 description 7
- 239000011733 molybdenum Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP140079/2010 | 2010-06-21 | ||
| JP2010140079A JP5418421B2 (ja) | 2010-06-21 | 2010-06-21 | 液晶表示素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102289118A CN102289118A (zh) | 2011-12-21 |
| CN102289118B true CN102289118B (zh) | 2014-08-06 |
Family
ID=45328354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110167250.0A Expired - Fee Related CN102289118B (zh) | 2010-06-21 | 2011-06-21 | 液晶显示元件 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8395717B2 (enExample) |
| JP (1) | JP5418421B2 (enExample) |
| CN (1) | CN102289118B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103365005A (zh) * | 2012-03-30 | 2013-10-23 | 群康科技(深圳)有限公司 | 阵列基板结构、阵列基板结构的制造方法与显示面板 |
| TWI518915B (zh) | 2012-03-30 | 2016-01-21 | 群康科技(深圳)有限公司 | 陣列基板結構與顯示面板及其製造方法 |
| CN102751300B (zh) * | 2012-06-18 | 2014-10-15 | 北京京东方光电科技有限公司 | 一种非晶硅平板x射线传感器的制作方法 |
| CN103199060B (zh) * | 2013-02-17 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种薄膜晶体管阵列基板及其制作方法及显示装置 |
| JP6124668B2 (ja) | 2013-04-26 | 2017-05-10 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
| KR102081827B1 (ko) * | 2013-07-02 | 2020-04-16 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| JP2015072339A (ja) * | 2013-10-02 | 2015-04-16 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
| CN104865761B (zh) * | 2014-02-25 | 2018-06-08 | 群创光电股份有限公司 | 显示面板及显示装置 |
| CN104062788A (zh) * | 2014-07-10 | 2014-09-24 | 信利半导体有限公司 | 像素结构、阵列基板及液晶显示面板 |
| JP2021128271A (ja) * | 2020-02-14 | 2021-09-02 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置用アレイ基板 |
| CN112599032A (zh) * | 2020-12-29 | 2021-04-02 | Oppo广东移动通信有限公司 | 显示屏、显示屏组件及电子装置 |
| CN114879394B (zh) * | 2022-04-29 | 2024-04-09 | 深圳市华星光电半导体显示技术有限公司 | 一种显示面板的制造方法及显示面板 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1611994A (zh) * | 2003-10-30 | 2005-05-04 | Lg.菲利浦Lcd株式会社 | 液晶显示装置及其制造方法 |
| CN101063781A (zh) * | 2006-04-30 | 2007-10-31 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板器件结构及其制造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3145931B2 (ja) | 1996-08-26 | 2001-03-12 | 日本電気株式会社 | 薄膜トランジスタ |
| JP3716651B2 (ja) | 1998-10-20 | 2005-11-16 | カシオ計算機株式会社 | 表示装置 |
| JP3107075B2 (ja) * | 1998-12-14 | 2000-11-06 | 日本電気株式会社 | 液晶表示装置 |
| JP4395612B2 (ja) | 2001-09-26 | 2010-01-13 | カシオ計算機株式会社 | 液晶表示素子 |
| JP4102925B2 (ja) | 2003-05-15 | 2008-06-18 | カシオ計算機株式会社 | アクティブマトリックス型液晶表示装置 |
| JP2005045017A (ja) * | 2003-07-22 | 2005-02-17 | Sharp Corp | アクティブマトリクス基板およびそれを備えた表示装置 |
| JP4571845B2 (ja) * | 2004-11-08 | 2010-10-27 | シャープ株式会社 | 液晶表示装置用基板及びそれを備えた液晶表示装置及びその駆動方法 |
| JP4687259B2 (ja) * | 2005-06-10 | 2011-05-25 | カシオ計算機株式会社 | 液晶表示装置 |
| JP2007294709A (ja) * | 2006-04-26 | 2007-11-08 | Epson Imaging Devices Corp | 電気光学装置、電子機器、および電気光学装置の製造方法 |
| JP4349406B2 (ja) * | 2006-08-24 | 2009-10-21 | セイコーエプソン株式会社 | 電気光学装置用基板及び電気光学装置、並びに電子機器 |
| JP4577318B2 (ja) * | 2007-03-02 | 2010-11-10 | セイコーエプソン株式会社 | 液晶装置の製造方法 |
| JP5245448B2 (ja) | 2008-02-22 | 2013-07-24 | カシオ計算機株式会社 | 有機エレクトロルミネセンス表示装置及びその製造方法 |
| JP4661913B2 (ja) * | 2008-07-19 | 2011-03-30 | カシオ計算機株式会社 | 液晶表示装置 |
| JP4367566B2 (ja) * | 2008-09-08 | 2009-11-18 | カシオ計算機株式会社 | アクティブマトリクスパネル |
-
2010
- 2010-06-21 JP JP2010140079A patent/JP5418421B2/ja not_active Expired - Fee Related
-
2011
- 2011-06-14 US US13/159,669 patent/US8395717B2/en not_active Expired - Fee Related
- 2011-06-21 CN CN201110167250.0A patent/CN102289118B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1611994A (zh) * | 2003-10-30 | 2005-05-04 | Lg.菲利浦Lcd株式会社 | 液晶显示装置及其制造方法 |
| CN101063781A (zh) * | 2006-04-30 | 2007-10-31 | 京东方科技集团股份有限公司 | 一种tft lcd阵列基板器件结构及其制造方法 |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2008-216524A 2008.09.18 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5418421B2 (ja) | 2014-02-19 |
| US20110310340A1 (en) | 2011-12-22 |
| CN102289118A (zh) | 2011-12-21 |
| US8395717B2 (en) | 2013-03-12 |
| JP2012003165A (ja) | 2012-01-05 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140806 Termination date: 20180621 |
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| CF01 | Termination of patent right due to non-payment of annual fee |