JP5417093B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5417093B2
JP5417093B2 JP2009208097A JP2009208097A JP5417093B2 JP 5417093 B2 JP5417093 B2 JP 5417093B2 JP 2009208097 A JP2009208097 A JP 2009208097A JP 2009208097 A JP2009208097 A JP 2009208097A JP 5417093 B2 JP5417093 B2 JP 5417093B2
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Japan
Prior art keywords
film
semiconductor device
insulating film
circuit
antenna
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Expired - Fee Related
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JP2009208097A
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English (en)
Japanese (ja)
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JP2010097599A5 (enExample
JP2010097599A (ja
Inventor
晋吾 江口
欣聡 及川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009208097A priority Critical patent/JP5417093B2/ja
Publication of JP2010097599A publication Critical patent/JP2010097599A/ja
Publication of JP2010097599A5 publication Critical patent/JP2010097599A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates

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  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009208097A 2008-09-19 2009-09-09 半導体装置 Expired - Fee Related JP5417093B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009208097A JP5417093B2 (ja) 2008-09-19 2009-09-09 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008240812 2008-09-19
JP2008240812 2008-09-19
JP2009208097A JP5417093B2 (ja) 2008-09-19 2009-09-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013209158A Division JP5593430B2 (ja) 2008-09-19 2013-10-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2010097599A JP2010097599A (ja) 2010-04-30
JP2010097599A5 JP2010097599A5 (enExample) 2012-09-06
JP5417093B2 true JP5417093B2 (ja) 2014-02-12

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009208097A Expired - Fee Related JP5417093B2 (ja) 2008-09-19 2009-09-09 半導体装置
JP2013209158A Expired - Fee Related JP5593430B2 (ja) 2008-09-19 2013-10-04 半導体装置
JP2014158704A Expired - Fee Related JP5779272B2 (ja) 2008-09-19 2014-08-04 半導体装置

Family Applications After (2)

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JP2013209158A Expired - Fee Related JP5593430B2 (ja) 2008-09-19 2013-10-04 半導体装置
JP2014158704A Expired - Fee Related JP5779272B2 (ja) 2008-09-19 2014-08-04 半導体装置

Country Status (5)

Country Link
US (2) US8552498B2 (enExample)
JP (3) JP5417093B2 (enExample)
CN (1) CN102160179B (enExample)
TW (1) TWI524502B (enExample)
WO (1) WO2010032611A1 (enExample)

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* Cited by examiner, † Cited by third party
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CN102160179B (zh) * 2008-09-19 2014-05-14 株式会社半导体能源研究所 半导体装置及其制造方法
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TWI493685B (zh) 2012-02-10 2015-07-21 E Ink Holdings Inc 主動陣列基板上之靜電防護結構
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage

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Publication number Publication date
JP5593430B2 (ja) 2014-09-24
US20100072548A1 (en) 2010-03-25
JP5779272B2 (ja) 2015-09-16
JP2014032693A (ja) 2014-02-20
US8957423B2 (en) 2015-02-17
CN102160179A (zh) 2011-08-17
CN102160179B (zh) 2014-05-14
WO2010032611A1 (en) 2010-03-25
JP2015005294A (ja) 2015-01-08
TW201029151A (en) 2010-08-01
US20140027852A1 (en) 2014-01-30
US8552498B2 (en) 2013-10-08
TWI524502B (zh) 2016-03-01
JP2010097599A (ja) 2010-04-30

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