TWI524502B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
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- TWI524502B TWI524502B TW098131247A TW98131247A TWI524502B TW I524502 B TWI524502 B TW I524502B TW 098131247 A TW098131247 A TW 098131247A TW 98131247 A TW98131247 A TW 98131247A TW I524502 B TWI524502 B TW I524502B
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- Prior art keywords
- insulating film
- antenna
- insulator
- circuit portion
- semiconductor device
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
Landscapes
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| JP2008240812 | 2008-09-19 |
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| TWI524502B true TWI524502B (zh) | 2016-03-01 |
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| TW098131247A TWI524502B (zh) | 2008-09-19 | 2009-09-16 | 半導體裝置及其製造方法 |
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| JP (3) | JP5417093B2 (enExample) |
| CN (1) | CN102160179B (enExample) |
| TW (1) | TWI524502B (enExample) |
| WO (1) | WO2010032611A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102160179B (zh) * | 2008-09-19 | 2014-05-14 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| WO2010035627A1 (en) * | 2008-09-25 | 2010-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5455753B2 (ja) * | 2009-04-06 | 2014-03-26 | 株式会社半導体エネルギー研究所 | Ｉｃカード |
| JP5501174B2 (ja) * | 2009-09-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI493685B (zh) | 2012-02-10 | 2015-07-21 | E Ink Holdings Inc | 主動陣列基板上之靜電防護結構 |
| US9911756B2 (en) | 2015-08-31 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage |
Family Cites Families (86)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR930003894B1 (ko) * | 1989-01-25 | 1993-05-15 | 아사히가세이고오교가부시끼가이샤 | 신규한 프리프레그와 복합 성형체, 및 복합 성형체의 제조방법 |
| DE3907757A1 (de) * | 1989-03-10 | 1990-09-13 | Mtu Muenchen Gmbh | Schutzfolie |
| JPH05190582A (ja) | 1992-01-08 | 1993-07-30 | Oki Electric Ind Co Ltd | 樹脂封止半導体装置及びその製造方法 |
| US5879502A (en) * | 1994-05-27 | 1999-03-09 | Gustafson; Ake | Method for making an electronic module and electronic module obtained according to the method |
| TW371285B (en) | 1994-09-19 | 1999-10-01 | Amp Akzo Linlam Vof | Foiled UD-prepreg and PWB laminate prepared therefrom |
| JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US5757456A (en) * | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
| JP3406727B2 (ja) | 1995-03-10 | 2003-05-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP3468954B2 (ja) | 1995-12-01 | 2003-11-25 | 日立化成工業株式会社 | Ｉｃカード |
| JPH1092980A (ja) | 1996-09-13 | 1998-04-10 | Toshiba Corp | 無線カードおよびその製造方法 |
| US6127199A (en) * | 1996-11-12 | 2000-10-03 | Seiko Epson Corporation | Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device |
| JPH10198778A (ja) * | 1997-01-14 | 1998-07-31 | Rohm Co Ltd | Ｉｃカード |
| JPH10211784A (ja) | 1997-01-31 | 1998-08-11 | Denso Corp | Ｉｃカードおよびその製造方法 |
| JP3500908B2 (ja) | 1997-04-28 | 2004-02-23 | 松下電器産業株式会社 | カードリーダ |
| JPH11317475A (ja) * | 1998-02-27 | 1999-11-16 | Canon Inc | 半導体用封止材樹脂および半導体素子 |
| US6909114B1 (en) * | 1998-11-17 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having LDD regions |
| JP4159712B2 (ja) * | 1998-11-17 | 2008-10-01 | 株式会社半導体エネルギー研究所 | 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末 |
| TW484101B (en) * | 1998-12-17 | 2002-04-21 | Hitachi Ltd | Semiconductor device and its manufacturing method |
| JP2000231619A (ja) | 1999-02-10 | 2000-08-22 | Nippon Telegr & Teleph Corp <Ntt> | 接触型ｉｃカード |
| US6399903B1 (en) * | 1999-03-01 | 2002-06-04 | Honeywell International Inc. | Multifunctional laminate structure and process |
| US6224965B1 (en) | 1999-06-25 | 2001-05-01 | Honeywell International Inc. | Microfiber dielectrics which facilitate laser via drilling |
| JP4423779B2 (ja) | 1999-10-13 | 2010-03-03 | 味の素株式会社 | エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法 |
| US6509217B1 (en) * | 1999-10-22 | 2003-01-21 | Damoder Reddy | Inexpensive, reliable, planar RFID tag structure and method for making same |
| JP4347496B2 (ja) | 2000-03-31 | 2009-10-21 | 共同印刷株式会社 | 可逆性感熱記録媒体の製造方法 |
| KR100495702B1 (ko) * | 2001-04-13 | 2005-06-14 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 그 제조 방법 |
| JP4027740B2 (ja) | 2001-07-16 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8415208B2 (en) * | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| JP2003141486A (ja) | 2001-11-08 | 2003-05-16 | Oji Paper Co Ltd | 非接触ｉｃカードとその製造方法 |
| KR100430001B1 (ko) * | 2001-12-18 | 2004-05-03 | 엘지전자 주식회사 | 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법 |
| KR100462861B1 (ko) * | 2002-04-15 | 2004-12-17 | 삼성에스디아이 주식회사 | 블랙매트릭스를 구비한 평판표시장치 및 그의 제조방법 |
| CN1459811A (zh) * | 2002-05-22 | 2003-12-03 | 松下电器产业株式会社 | 陶瓷层压器件、通信设备和制造陶瓷层压器件的方法 |
| EP1514307A1 (en) | 2002-06-19 | 2005-03-16 | Sten Bjorsell | Electronics circuit manufacture |
| US7485489B2 (en) * | 2002-06-19 | 2009-02-03 | Bjoersell Sten | Electronics circuit manufacture |
| JP3863464B2 (ja) * | 2002-07-05 | 2006-12-27 | 株式会社ヨコオ | フィルタ内蔵アンテナ |
| US7132311B2 (en) * | 2002-07-26 | 2006-11-07 | Intel Corporation | Encapsulation of a stack of semiconductor dice |
| JP2004094492A (ja) | 2002-08-30 | 2004-03-25 | Konica Minolta Holdings Inc | Ｉｃカード |
| JP4012025B2 (ja) | 2002-09-24 | 2007-11-21 | 大日本印刷株式会社 | 微小構造体付きフィルムの製造方法と微小構造体付きフィルム |
| JP4828088B2 (ja) | 2003-06-05 | 2011-11-30 | 凸版印刷株式会社 | Ｉｃタグ |
| JP4163567B2 (ja) * | 2003-07-09 | 2008-10-08 | 株式会社 日立ディスプレイズ | 発光型表示装置 |
| CN100461411C (zh) * | 2004-01-30 | 2009-02-11 | 株式会社半导体能源研究所 | 半导体器件 |
| US20050233122A1 (en) * | 2004-04-19 | 2005-10-20 | Mikio Nishimura | Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein |
| KR101187403B1 (ko) * | 2004-06-02 | 2012-10-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| US7534702B2 (en) * | 2004-06-29 | 2009-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| US7591863B2 (en) * | 2004-07-16 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip |
| CN100474629C (zh) * | 2004-08-23 | 2009-04-01 | 株式会社半导体能源研究所 | 无线芯片及其制造方法 |
| WO2006038438A2 (ja) | 2004-09-14 | 2006-04-13 | Oji Paper Co | 可逆性感熱記録体及び、表示層を有する通信媒体及び記録体 |
| US7972910B2 (en) * | 2005-06-03 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of integrated circuit device including thin film transistor |
| JP5159053B2 (ja) * | 2005-06-30 | 2013-03-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US7719103B2 (en) | 2005-06-30 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device |
| US7727859B2 (en) * | 2005-06-30 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and manufacturing method thereof |
| US7510950B2 (en) * | 2005-06-30 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP2007059821A (ja) | 2005-08-26 | 2007-03-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
| JP5063066B2 (ja) | 2005-09-30 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2007043285A1 (en) | 2005-09-30 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US7504317B2 (en) * | 2005-12-02 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| JP4251185B2 (ja) | 2006-01-23 | 2009-04-08 | ソニー株式会社 | 半導体集積回路カードの製造方法 |
| JP2007234001A (ja) * | 2006-01-31 | 2007-09-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| WO2007088796A1 (en) | 2006-01-31 | 2007-08-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2007241999A (ja) | 2006-02-08 | 2007-09-20 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| EP2259213B1 (en) | 2006-02-08 | 2015-12-23 | Semiconductor Energy Laboratory Co., Ltd. | RFID device |
| US7605410B2 (en) | 2006-02-23 | 2009-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5297591B2 (ja) * | 2006-02-23 | 2013-09-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2007264221A (ja) * | 2006-03-28 | 2007-10-11 | Dainippon Printing Co Ltd | 低屈折率層用コーティング組成物、及び反射防止膜 |
| TWI431726B (zh) * | 2006-06-01 | 2014-03-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| EP2038818B1 (en) | 2006-06-26 | 2014-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Paper including semiconductor device and manufacturing method thereof |
| JP5063256B2 (ja) | 2006-08-31 | 2012-10-31 | 株式会社半導体エネルギー研究所 | クロック生成回路、クロック生成回路が有するカウンター回路、及び半導体装置 |
| KR101381359B1 (ko) * | 2006-08-31 | 2014-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 클록 생성 회로 및 이 클록 생성 회로를 구비한 반도체장치 |
| US7843011B2 (en) * | 2007-01-31 | 2010-11-30 | Freescale Semiconductor, Inc. | Electronic device including insulating layers having different strains |
| EP2372756A1 (en) * | 2007-03-13 | 2011-10-05 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976001A3 (en) * | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| EP2001047A1 (en) * | 2007-06-07 | 2008-12-10 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
| EP2019425A1 (en) * | 2007-07-27 | 2009-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP5248240B2 (ja) * | 2007-08-30 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN101803008B (zh) * | 2007-09-07 | 2012-11-28 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| JP5003366B2 (ja) * | 2007-09-10 | 2012-08-15 | セイコーエプソン株式会社 | 電気光学装置及びその製造方法、並びに電子機器 |
| KR101563138B1 (ko) * | 2008-04-25 | 2015-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치 제조 방법 |
| KR101582503B1 (ko) * | 2008-05-12 | 2016-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| WO2009142309A1 (en) * | 2008-05-23 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2009142310A1 (en) * | 2008-05-23 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR20110027760A (ko) * | 2008-06-06 | 2011-03-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| US8053253B2 (en) * | 2008-06-06 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5248412B2 (ja) * | 2008-06-06 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8044499B2 (en) * | 2008-06-10 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method thereof |
| JP5473413B2 (ja) * | 2008-06-20 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法 |
| CN102160179B (zh) * | 2008-09-19 | 2014-05-14 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
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2009
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Also Published As
| Publication number | Publication date |
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| JP5593430B2 (ja) | 2014-09-24 |
| JP5417093B2 (ja) | 2014-02-12 |
| US20100072548A1 (en) | 2010-03-25 |
| JP5779272B2 (ja) | 2015-09-16 |
| JP2014032693A (ja) | 2014-02-20 |
| US8957423B2 (en) | 2015-02-17 |
| CN102160179A (zh) | 2011-08-17 |
| CN102160179B (zh) | 2014-05-14 |
| WO2010032611A1 (en) | 2010-03-25 |
| JP2015005294A (ja) | 2015-01-08 |
| TW201029151A (en) | 2010-08-01 |
| US20140027852A1 (en) | 2014-01-30 |
| US8552498B2 (en) | 2013-10-08 |
| JP2010097599A (ja) | 2010-04-30 |
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