CN102160179B - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN102160179B
CN102160179B CN200980136494.3A CN200980136494A CN102160179B CN 102160179 B CN102160179 B CN 102160179B CN 200980136494 A CN200980136494 A CN 200980136494A CN 102160179 B CN102160179 B CN 102160179B
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China
Prior art keywords
conductive layer
insulator
semiconductor device
antenna
film
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Expired - Fee Related
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CN200980136494.3A
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English (en)
Chinese (zh)
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CN102160179A (zh
Inventor
江口晋吾
及川欣聪
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates

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  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN200980136494.3A 2008-09-19 2009-08-26 半导体装置及其制造方法 Expired - Fee Related CN102160179B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008240812 2008-09-19
JP2008-240812 2008-09-19
PCT/JP2009/065280 WO2010032611A1 (en) 2008-09-19 2009-08-26 Semiconductor device and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN102160179A CN102160179A (zh) 2011-08-17
CN102160179B true CN102160179B (zh) 2014-05-14

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CN200980136494.3A Expired - Fee Related CN102160179B (zh) 2008-09-19 2009-08-26 半导体装置及其制造方法

Country Status (5)

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US (2) US8552498B2 (enExample)
JP (3) JP5417093B2 (enExample)
CN (1) CN102160179B (enExample)
TW (1) TWI524502B (enExample)
WO (1) WO2010032611A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102160179B (zh) * 2008-09-19 2014-05-14 株式会社半导体能源研究所 半导体装置及其制造方法
WO2010035627A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5455753B2 (ja) * 2009-04-06 2014-03-26 株式会社半導体エネルギー研究所 Ｉｃカード
JP5501174B2 (ja) * 2009-09-17 2014-05-21 株式会社半導体エネルギー研究所 半導体装置
TWI493685B (zh) 2012-02-10 2015-07-21 E Ink Holdings Inc 主動陣列基板上之靜電防護結構
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879502A (en) * 1994-05-27 1999-03-09 Gustafson; Ake Method for making an electronic module and electronic module obtained according to the method
CN1993829A (zh) * 2004-06-02 2007-07-04 株式会社半导体能源研究所 层压系统

Family Cites Families (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930003894B1 (ko) * 1989-01-25 1993-05-15 아사히가세이고오교가부시끼가이샤 신규한 프리프레그와 복합 성형체, 및 복합 성형체의 제조방법
DE3907757A1 (de) * 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
TW371285B (en) 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
JP3468954B2 (ja) 1995-12-01 2003-11-25 日立化成工業株式会社 Ｉｃカード
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JPH10198778A (ja) * 1997-01-14 1998-07-31 Rohm Co Ltd Ｉｃカード
JPH10211784A (ja) 1997-01-31 1998-08-11 Denso Corp Ｉｃカードおよびその製造方法
JP3500908B2 (ja) 1997-04-28 2004-02-23 松下電器産業株式会社 カードリーダ
JPH11317475A (ja) * 1998-02-27 1999-11-16 Canon Inc 半導体用封止材樹脂および半導体素子
US6909114B1 (en) * 1998-11-17 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having LDD regions
JP4159712B2 (ja) * 1998-11-17 2008-10-01 株式会社半導体エネルギー研究所 半導体装置、アクティブマトリクス型表示装置、液晶表示装置、エレクトロルミネッセンス表示装置、ビデオカメラ、デジタルカメラ、プロジェクタ、ゴーグル型ディスプレイ、カーナビゲーションシステム、パーソナルコンピュータ又は携帯型情報端末
TW484101B (en) * 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP2000231619A (ja) 1999-02-10 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> 接触型ｉｃカード
US6399903B1 (en) * 1999-03-01 2002-06-04 Honeywell International Inc. Multifunctional laminate structure and process
US6224965B1 (en) 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
US6509217B1 (en) * 1999-10-22 2003-01-21 Damoder Reddy Inexpensive, reliable, planar RFID tag structure and method for making same
JP4347496B2 (ja) 2000-03-31 2009-10-21 共同印刷株式会社 可逆性感熱記録媒体の製造方法
KR100495702B1 (ko) * 2001-04-13 2005-06-14 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003141486A (ja) 2001-11-08 2003-05-16 Oji Paper Co Ltd 非接触ｉｃカードとその製造方法
KR100430001B1 (ko) * 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
KR100462861B1 (ko) * 2002-04-15 2004-12-17 삼성에스디아이 주식회사 블랙매트릭스를 구비한 평판표시장치 및 그의 제조방법
CN1459811A (zh) * 2002-05-22 2003-12-03 松下电器产业株式会社 陶瓷层压器件、通信设备和制造陶瓷层压器件的方法
EP1514307A1 (en) 2002-06-19 2005-03-16 Sten Bjorsell Electronics circuit manufacture
US7485489B2 (en) * 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
JP3863464B2 (ja) * 2002-07-05 2006-12-27 株式会社ヨコオ フィルタ内蔵アンテナ
US7132311B2 (en) * 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
JP2004094492A (ja) 2002-08-30 2004-03-25 Konica Minolta Holdings Inc Ｉｃカード
JP4012025B2 (ja) 2002-09-24 2007-11-21 大日本印刷株式会社 微小構造体付きフィルムの製造方法と微小構造体付きフィルム
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Ｉｃタグ
JP4163567B2 (ja) * 2003-07-09 2008-10-08 株式会社 日立ディスプレイズ 発光型表示装置
CN100461411C (zh) * 2004-01-30 2009-02-11 株式会社半导体能源研究所 半导体器件
US20050233122A1 (en) * 2004-04-19 2005-10-20 Mikio Nishimura Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
US7534702B2 (en) * 2004-06-29 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
CN100474629C (zh) * 2004-08-23 2009-04-01 株式会社半导体能源研究所 无线芯片及其制造方法
WO2006038438A2 (ja) 2004-09-14 2006-04-13 Oji Paper Co 可逆性感熱記録体及び、表示層を有する通信媒体及び記録体
US7972910B2 (en) * 2005-06-03 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of integrated circuit device including thin film transistor
JP5159053B2 (ja) * 2005-06-30 2013-03-06 株式会社半導体エネルギー研究所 半導体装置
US7719103B2 (en) 2005-06-30 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7510950B2 (en) * 2005-06-30 2009-03-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007059821A (ja) 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
JP5063066B2 (ja) 2005-09-30 2012-10-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2007043285A1 (en) 2005-09-30 2007-04-19 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7504317B2 (en) * 2005-12-02 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4251185B2 (ja) 2006-01-23 2009-04-08 ソニー株式会社 半導体集積回路カードの製造方法
JP2007234001A (ja) * 2006-01-31 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体装置
WO2007088796A1 (en) 2006-01-31 2007-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2007241999A (ja) 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
EP2259213B1 (en) 2006-02-08 2015-12-23 Semiconductor Energy Laboratory Co., Ltd. RFID device
US7605410B2 (en) 2006-02-23 2009-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5297591B2 (ja) * 2006-02-23 2013-09-25 株式会社半導体エネルギー研究所 半導体装置
JP2007264221A (ja) * 2006-03-28 2007-10-11 Dainippon Printing Co Ltd 低屈折率層用コーティング組成物、及び反射防止膜
TWI431726B (zh) * 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
EP2038818B1 (en) 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
JP5063256B2 (ja) 2006-08-31 2012-10-31 株式会社半導体エネルギー研究所 クロック生成回路、クロック生成回路が有するカウンター回路、及び半導体装置
KR101381359B1 (ko) * 2006-08-31 2014-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 클록 생성 회로 및 이 클록 생성 회로를 구비한 반도체장치
US7843011B2 (en) * 2007-01-31 2010-11-30 Freescale Semiconductor, Inc. Electronic device including insulating layers having different strains
EP2372756A1 (en) * 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP1976001A3 (en) * 2007-03-26 2012-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
EP2001047A1 (en) * 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
EP2019425A1 (en) * 2007-07-27 2009-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5248240B2 (ja) * 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
CN101803008B (zh) * 2007-09-07 2012-11-28 株式会社半导体能源研究所 半导体装置及其制造方法
JP5003366B2 (ja) * 2007-09-10 2012-08-15 セイコーエプソン株式会社 電気光学装置及びその製造方法、並びに電子機器
KR101563138B1 (ko) * 2008-04-25 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR101582503B1 (ko) * 2008-05-12 2016-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2009142309A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20110027760A (ko) * 2008-06-06 2011-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8053253B2 (en) * 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5248412B2 (ja) * 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8044499B2 (en) * 2008-06-10 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Wiring substrate, manufacturing method thereof, semiconductor device, and manufacturing method thereof
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
CN102160179B (zh) * 2008-09-19 2014-05-14 株式会社半导体能源研究所 半导体装置及其制造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5879502A (en) * 1994-05-27 1999-03-09 Gustafson; Ake Method for making an electronic module and electronic module obtained according to the method
CN1993829A (zh) * 2004-06-02 2007-07-04 株式会社半导体能源研究所 层压系统

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JP5593430B2 (ja) 2014-09-24
JP5417093B2 (ja) 2014-02-12
US20100072548A1 (en) 2010-03-25
JP5779272B2 (ja) 2015-09-16
JP2014032693A (ja) 2014-02-20
US8957423B2 (en) 2015-02-17
CN102160179A (zh) 2011-08-17
WO2010032611A1 (en) 2010-03-25
JP2015005294A (ja) 2015-01-08
TW201029151A (en) 2010-08-01
US20140027852A1 (en) 2014-01-30
US8552498B2 (en) 2013-10-08
TWI524502B (zh) 2016-03-01
JP2010097599A (ja) 2010-04-30

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