JP2010097599A5 - - Google Patents

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Publication number
JP2010097599A5
JP2010097599A5 JP2009208097A JP2009208097A JP2010097599A5 JP 2010097599 A5 JP2010097599 A5 JP 2010097599A5 JP 2009208097 A JP2009208097 A JP 2009208097A JP 2009208097 A JP2009208097 A JP 2009208097A JP 2010097599 A5 JP2010097599 A5 JP 2010097599A5
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JP
Japan
Prior art keywords
insulator
conductive layer
insulating film
conductive
circuit portion
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JP2009208097A
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English (en)
Japanese (ja)
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JP5417093B2 (ja
JP2010097599A (ja
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Priority to JP2009208097A priority Critical patent/JP5417093B2/ja
Priority claimed from JP2009208097A external-priority patent/JP5417093B2/ja
Publication of JP2010097599A publication Critical patent/JP2010097599A/ja
Publication of JP2010097599A5 publication Critical patent/JP2010097599A5/ja
Application granted granted Critical
Publication of JP5417093B2 publication Critical patent/JP5417093B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009208097A 2008-09-19 2009-09-09 半導体装置 Expired - Fee Related JP5417093B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009208097A JP5417093B2 (ja) 2008-09-19 2009-09-09 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008240812 2008-09-19
JP2008240812 2008-09-19
JP2009208097A JP5417093B2 (ja) 2008-09-19 2009-09-09 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013209158A Division JP5593430B2 (ja) 2008-09-19 2013-10-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2010097599A JP2010097599A (ja) 2010-04-30
JP2010097599A5 true JP2010097599A5 (enExample) 2012-09-06
JP5417093B2 JP5417093B2 (ja) 2014-02-12

Family

ID=42036758

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009208097A Expired - Fee Related JP5417093B2 (ja) 2008-09-19 2009-09-09 半導体装置
JP2013209158A Expired - Fee Related JP5593430B2 (ja) 2008-09-19 2013-10-04 半導体装置
JP2014158704A Expired - Fee Related JP5779272B2 (ja) 2008-09-19 2014-08-04 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013209158A Expired - Fee Related JP5593430B2 (ja) 2008-09-19 2013-10-04 半導体装置
JP2014158704A Expired - Fee Related JP5779272B2 (ja) 2008-09-19 2014-08-04 半導体装置

Country Status (5)

Country Link
US (2) US8552498B2 (enExample)
JP (3) JP5417093B2 (enExample)
CN (1) CN102160179B (enExample)
TW (1) TWI524502B (enExample)
WO (1) WO2010032611A1 (enExample)

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JP5455753B2 (ja) * 2009-04-06 2014-03-26 株式会社半導体エネルギー研究所 Ｉｃカード
JP5501174B2 (ja) * 2009-09-17 2014-05-21 株式会社半導体エネルギー研究所 半導体装置
TWI493685B (zh) 2012-02-10 2015-07-21 E Ink Holdings Inc 主動陣列基板上之靜電防護結構
US9911756B2 (en) 2015-08-31 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor and electronic device surrounded by layer having assigned band gap to prevent electrostatic discharge damage

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