JP5399339B2 - 消耗材料からなるpvd用ターゲット構造体 - Google Patents
消耗材料からなるpvd用ターゲット構造体 Download PDFInfo
- Publication number
- JP5399339B2 JP5399339B2 JP2010175185A JP2010175185A JP5399339B2 JP 5399339 B2 JP5399339 B2 JP 5399339B2 JP 2010175185 A JP2010175185 A JP 2010175185A JP 2010175185 A JP2010175185 A JP 2010175185A JP 5399339 B2 JP5399339 B2 JP 5399339B2
- Authority
- JP
- Japan
- Prior art keywords
- pvd
- target
- tube
- detector
- pvd target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims description 62
- 238000005240 physical vapour deposition Methods 0.000 claims description 154
- 238000000034 method Methods 0.000 claims description 38
- 239000002994 raw material Substances 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 claims description 7
- 238000005304 joining Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000011664 signaling Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 23
- 238000012545 processing Methods 0.000 description 20
- 239000011261 inert gas Substances 0.000 description 15
- 238000000465 moulding Methods 0.000 description 14
- 239000013077 target material Substances 0.000 description 14
- 238000001125 extrusion Methods 0.000 description 10
- 238000012806 monitoring device Methods 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000010409 thin film Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GGCHXCZGMDRXPH-UHFFFAOYSA-N [Si+2]=O.[S-2].[Zn+2].[S-2] Chemical compound [Si+2]=O.[S-2].[Zn+2].[S-2] GGCHXCZGMDRXPH-UHFFFAOYSA-N 0.000 description 1
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3479—Detecting exhaustion of target material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3482—Detecting or avoiding eroding through
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Continuous Casting (AREA)
- Metal Rolling (AREA)
Description
110 PVDターゲット(消耗スラブ)
120 フィラメント検出器
120’ 電極検出器
122 管
124 フィラメント
124a’ 電極
124b’ 電極
220 不活性ガス検出器
224 不活性ガス
330 監視装置
440 検出器層
520 多管状検出器
520’ 多管状検出器
610 PVDターゲット
610.1 原料部材
610.2 接合部材
610.3 薄膜
620 管状検出器
620’ 管状検出器
810 消耗PVDターゲット
820 不活性ガス検出器または検出器層
850 ベース板
940 バルク材料
941 孔
942 別個の管
950 成型/押し出しダイスの装置
951 外側部材
951a 外側部材の内面
952 内側部材
952a 内側部材の外面
980 シート
980’ シート
981 管
981’ 管
982 対向する各端部
982’ 対向する各端部
Claims (4)
- 物理的気相成長法(PVD)ターゲットと少なくとも1つの検出器を備えたPVDターゲット構造体であって、
前記PVDターゲットは、
消耗材料からなり、前記消耗材料とは異なった第一の材料からなるターゲットベース板の上を覆って配置されたベース面を有する原料部材と、
前記消耗材料および前記第一の材料とは異なった接合材料からなり、前記原料部材と前記ターゲットベース板との間に配置された接合部材と、
前記原料部材と前記接合部材との間に配置されたバリヤと
を備え、
前記少なくとも1つの検出器は、前記PVDターゲットが当該消耗材料の所定量に接近しているか、もしくは、当該所定量にまで減量していることを信号で伝達するためのものであって、かつ、前記少なくとも1つの検出器は、筐体を備え、この筐体は、気体、液体、または固体が充填され、
前記気体は、PVD処理に晒されると前記筐体から放出されることで検出可能になり、前記液体、または固体は、PVD処理に晒されると気化することで前記液体、または固体を由来とする気体として検出可能になり、
前記原料部材は、前記接合部材に当接する当接面に第一の溝を備え、
前記接合部材は、前記原料部材に当接する当接面に前記第一の溝と接続した第二の溝を備え、
前記バリアは、前記接合部材の原子が、前記第二の溝と前記原料部材に移動するのを防ぐために、前記接合部材の前記第二の溝に配置され、
前記少なくとも1つの検出器の前記筐体は、前記第一の溝および前記第二の溝の中に配置された
ことを特徴とするPVDターゲット構造体。 - 前記気体、前記液体、または前記固体の検出により、前記PVDターゲット構造体に係る消耗材料の残存量が前記所定量に接近しているか、または前記所定量に達しているかが指示されることを特徴とする請求項1に記載のPVDターゲット構造体。
- 前記筐体は、前記消耗材料から構成されることを特徴とする請求項1または2に記載のPVDターゲット構造体。
- 前記筐体は、封止部によって閉鎖された、2つの対向する開口端部を有する管によって形成されることを特徴とする請求項1ないし3のいずれか1つに記載のPVDターゲット構造体。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72039005P | 2005-09-26 | 2005-09-26 | |
US60/720,390 | 2005-09-26 | ||
US72872405P | 2005-10-20 | 2005-10-20 | |
US60/728,724 | 2005-10-20 | ||
US11/427,602 | 2006-06-29 | ||
US11/427,602 US8795486B2 (en) | 2005-09-26 | 2006-06-29 | PVD target with end of service life detection capability |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006259203A Division JP2007113115A (ja) | 2005-09-26 | 2006-09-25 | 消耗材料からなるスラブ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010270401A JP2010270401A (ja) | 2010-12-02 |
JP5399339B2 true JP5399339B2 (ja) | 2014-01-29 |
Family
ID=37892520
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006259203A Pending JP2007113115A (ja) | 2005-09-26 | 2006-09-25 | 消耗材料からなるスラブ |
JP2010175185A Active JP5399339B2 (ja) | 2005-09-26 | 2010-08-04 | 消耗材料からなるpvd用ターゲット構造体 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006259203A Pending JP2007113115A (ja) | 2005-09-26 | 2006-09-25 | 消耗材料からなるスラブ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8795486B2 (ja) |
JP (2) | JP2007113115A (ja) |
KR (1) | KR100826261B1 (ja) |
SG (2) | SG158845A1 (ja) |
TW (1) | TWI365918B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070068796A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a target having end of service life detection capability |
US7891536B2 (en) * | 2005-09-26 | 2011-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
JP2013185230A (ja) * | 2012-03-09 | 2013-09-19 | Solar Applied Materials Technology Corp | アラーム機能を有するスパッタリングターゲット |
US10060023B2 (en) | 2012-10-19 | 2018-08-28 | Infineon Technologies Ag | Backing plate for a sputter target, sputter target, and sputter device |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4324631A (en) | 1979-07-23 | 1982-04-13 | Spin Physics, Inc. | Magnetron sputtering of magnetic materials |
ATE10512T1 (de) | 1980-08-08 | 1984-12-15 | Battelle Development Corporation | Vorrichtung zur beschichtung von substraten mittels hochleistungskathodenzerstaeubung sowie zerstaeuberkathode fuer diese vorrichtung. |
US4336119A (en) | 1981-01-29 | 1982-06-22 | Ppg Industries, Inc. | Method of and apparatus for control of reactive sputtering deposition |
US4545882A (en) | 1983-09-02 | 1985-10-08 | Shatterproof Glass Corporation | Method and apparatus for detecting sputtering target depletion |
DE3630737C1 (de) * | 1986-09-10 | 1987-11-05 | Philips & Du Pont Optical | Kathodenzerstaeubungseinrichtung mit einer Vorrichtung zur Messung eines kritischen Target-Abtrages |
CH669609A5 (ja) | 1986-12-23 | 1989-03-31 | Balzers Hochvakuum | |
EP0417221A1 (de) | 1989-03-15 | 1991-03-20 | Balzers Aktiengesellschaft | Verfahren zur detektion des erreichens einer vorgebbaren tiefe der targetkörpererosion sowie targetkörper hierfür |
JPH0641744A (ja) | 1992-05-26 | 1994-02-15 | Hitachi Ltd | スパッタ装置 |
JPH0688230A (ja) | 1992-09-04 | 1994-03-29 | Nippon Steel Corp | スパッタリング装置 |
JPH06140383A (ja) | 1992-10-27 | 1994-05-20 | Nippon Steel Corp | スパッタリング装置 |
JPH06212416A (ja) | 1993-01-12 | 1994-08-02 | Nippon Steel Corp | スパッタリング装置 |
JPH06306593A (ja) | 1993-04-16 | 1994-11-01 | Nkk Corp | スパッタリング装置 |
JPH08176808A (ja) | 1993-04-28 | 1996-07-09 | Japan Energy Corp | 寿命警報機能を備えたスパッタリングタ−ゲット |
JPH0754140A (ja) | 1993-08-19 | 1995-02-28 | Matsushita Electron Corp | スパッタリング装置 |
JPH07292472A (ja) | 1994-04-21 | 1995-11-07 | Sharp Corp | スパッタ装置のターゲット減肉量検出方法及びその装置 |
JP3504743B2 (ja) | 1994-09-30 | 2004-03-08 | 日本電産株式会社 | スピンドルモータ |
JP3660013B2 (ja) | 1995-03-31 | 2005-06-15 | 株式会社テクノファイン | スパッタ用ターゲット |
JPH1025571A (ja) | 1996-07-09 | 1998-01-27 | Sony Corp | スパッタ用ターゲット及びその製造方法 |
US6323055B1 (en) * | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6136164A (en) | 1998-07-15 | 2000-10-24 | United Microelectronics Corp. | Apparatus for detecting position of collimator in sputtering processing chamber |
US6156164A (en) | 1999-06-22 | 2000-12-05 | Tokyo Electron Limited | Virtual shutter method and apparatus for preventing damage to gallium arsenide substrates during processing |
US6423161B1 (en) | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
JP2003529206A (ja) | 1999-11-24 | 2003-09-30 | ハネウェル・インターナショナル・インコーポレーテッド | 物理蒸着ターゲット、導電性集積回路金属合金相互接続配線、電気めっきアノード、集積回路における導電性相互接続配線として用いるための金属合金 |
US6780794B2 (en) | 2000-01-20 | 2004-08-24 | Honeywell International Inc. | Methods of bonding physical vapor deposition target materials to backing plate materials |
US7063773B2 (en) | 2000-08-17 | 2006-06-20 | Tosoh Smd, Inc. | High purity sputter targets with target end-of-life indication and method of manufacture |
JP2004527650A (ja) | 2000-10-12 | 2004-09-09 | ハネウェル・インターナショナル・インコーポレーテッド | スパッタリングターゲット材の製造方法 |
US6503380B1 (en) | 2000-10-13 | 2003-01-07 | Honeywell International Inc. | Physical vapor target constructions |
US6638402B2 (en) | 2001-06-05 | 2003-10-28 | Praxair S.T. Technology, Inc. | Ring-type sputtering target |
WO2003027785A1 (fr) | 2001-09-21 | 2003-04-03 | Olympus Corporation | Dispositif de gestion en mode de traitement par lots |
JP4057287B2 (ja) * | 2001-11-30 | 2008-03-05 | 日鉱金属株式会社 | エロージョンプロファイルターゲットの製造方法 |
US20060065517A1 (en) * | 2002-06-14 | 2006-03-30 | Tosoh Smd, Inc. | Target and method of diffusion bonding target to backing plate |
US6811657B2 (en) | 2003-01-27 | 2004-11-02 | Micron Technology, Inc. | Device for measuring the profile of a metal film sputter deposition target, and system and method employing same |
US20040262157A1 (en) | 2003-02-25 | 2004-12-30 | Ford Robert B. | Method of forming sputtering target assembly and assemblies made therefrom |
JP2004299134A (ja) | 2003-03-28 | 2004-10-28 | Toshiba Mach Co Ltd | 射出成形機における材料供給装置及び射出成形機 |
US20070068796A1 (en) | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a target having end of service life detection capability |
US7891536B2 (en) | 2005-09-26 | 2011-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
-
2006
- 2006-06-29 US US11/427,602 patent/US8795486B2/en active Active
- 2006-08-03 SG SG200908721-4A patent/SG158845A1/en unknown
- 2006-08-03 SG SG200605239-3A patent/SG131007A1/en unknown
- 2006-09-25 JP JP2006259203A patent/JP2007113115A/ja active Pending
- 2006-09-25 KR KR1020060092880A patent/KR100826261B1/ko active IP Right Grant
- 2006-09-26 TW TW095135500A patent/TWI365918B/zh active
-
2010
- 2010-08-04 JP JP2010175185A patent/JP5399339B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
SG131007A1 (en) | 2007-04-26 |
TW200712242A (en) | 2007-04-01 |
KR100826261B1 (ko) | 2008-04-29 |
US20070068803A1 (en) | 2007-03-29 |
KR20070034955A (ko) | 2007-03-29 |
SG158845A1 (en) | 2010-02-26 |
JP2010270401A (ja) | 2010-12-02 |
JP2007113115A (ja) | 2007-05-10 |
US8795486B2 (en) | 2014-08-05 |
TWI365918B (en) | 2012-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4646883B2 (ja) | Pvdターゲット構造体を製造する方法 | |
JP5399339B2 (ja) | 消耗材料からなるpvd用ターゲット構造体 | |
CN100529160C (zh) | 可消耗材料的厚板及物理气相沉积靶材料 | |
US5362372A (en) | Self cleaning collimator | |
JP2006351964A (ja) | 発光素子実装用基板及びその製造方法 | |
JP2011511161A (ja) | 改良型のスパッタリングターゲットおよび蒸着構成要素、それらの製造方法ならびに使用法本出願は、その全体が本明細書に組み込まれる、2008年1月31日に出願された係属中の米国仮特許出願第61/025,144号の優先権を主張するものである。 | |
JPWO2009157439A1 (ja) | スパッタリング装置及びスパッタリング方法 | |
CN111328351B (zh) | 多图案化的溅射捕集器及制造方法 | |
US20070068796A1 (en) | Method of using a target having end of service life detection capability | |
CN108220892A (zh) | 溅射靶-背衬板接合体 | |
JP5044541B2 (ja) | 気相堆積用途に利用されるコイルおよび生産方法 | |
JP3686540B2 (ja) | 電子デバイスの製造方法 | |
WO2009093596A1 (ja) | 金属微粒子の生成方法、金属含有ペーストの製造方法及び金属薄膜配線の形成方法 | |
JP5258834B2 (ja) | スラブの寿命検出方法およびそのシステム | |
TWI834029B (zh) | 濺鍍標靶部件、濺鍍設備及濺鍍方法 | |
JP2010248588A (ja) | 成膜方法、成膜装置、及び半導体装置の製造方法 | |
JP2002069628A (ja) | パーティクル発生の少ないスパッタリングターゲット | |
US20060226003A1 (en) | Apparatus and methods for ionized deposition of a film or thin layer | |
TW200305656A (en) | Topologically tailored sputtering targets |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130611 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130905 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131001 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131023 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5399339 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |