JPWO2009157439A1 - スパッタリング装置及びスパッタリング方法 - Google Patents
スパッタリング装置及びスパッタリング方法 Download PDFInfo
- Publication number
- JPWO2009157439A1 JPWO2009157439A1 JP2010518018A JP2010518018A JPWO2009157439A1 JP WO2009157439 A1 JPWO2009157439 A1 JP WO2009157439A1 JP 2010518018 A JP2010518018 A JP 2010518018A JP 2010518018 A JP2010518018 A JP 2010518018A JP WO2009157439 A1 JPWO2009157439 A1 JP WO2009157439A1
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- target
- substrate
- magnetic field
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000002245 particle Substances 0.000 claims description 18
- 239000010408 film Substances 0.000 description 35
- 239000007789 gas Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- -1 Argon ions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
2 真空チャンバ
3 ターゲット
3a スパッタ面
4 磁石組立体
5 DC電源(スパッタ電源)
7 ガス管(ガス導入手段)
11u 上コイル(磁場発生手段)
11d 下コイル(磁場発生手段)
12 電源装置(磁場発生手段)
C カソードユニット
M 磁束
W 基板
Claims (4)
- 真空チャンバ内に設置した基板の表面に成膜するためのスパッタリング装置であって、前記基板に対向配置されるターゲットと、前記ターゲットのスパッタ面前方に磁場を発生させる磁石組立体と、前記真空チャンバ内にスパッタガスを導入するガス導入手段と、前記ターゲットに負の電位を印加するスパッタ電源とを備えたものにおいて、
前記ターゲットのスパッタ面及び基板の全面に亘って所定の間隔で垂直な磁力線が通るように垂直磁場を発生させる磁場発生手段を備えたことを特徴とするスパッタリング装置。 - 前記磁場発生手段は、前記ターゲットと基板とを結ぶ基準軸の回りで、かつ、前記基準軸の長手方向で所定の間隔を存して設けた少なくとも2個のコイルと、各コイルへの通電を可能とする電源装置とを備えることを特徴とする請求項1記載のスパッタリング装置。
- 処理すべき基板の表面に成膜するためのスパッタリング方法であって、
前記基板及びターゲットを対向配置した真空チャンバ内でターゲットのスパッタ面及び基板の全面に亘って所定の間隔で垂直な磁力線が通るように垂直磁場を発生させ、
前記真空チャンバ内にスパッタガスを導入し、前記ターゲットのスパッタ面前方に磁場を発生させた状態で前記ターゲットに負の直流電位を印加してプラズマ雰囲気を形成し、
前記ターゲットをスパッタリングすることでスパッタ粒子を前記基板表面に付着、堆積させて成膜することを特徴とするスパッタリング方法。 - 前記垂直磁場をスパッタ面から基板への向きに発生させることを特徴とする請求項3記載のスパッタリング方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008167174 | 2008-06-26 | ||
JP2008167174 | 2008-06-26 | ||
PCT/JP2009/061398 WO2009157439A1 (ja) | 2008-06-26 | 2009-06-23 | スパッタリング装置及びスパッタリング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2009157439A1 true JPWO2009157439A1 (ja) | 2011-12-15 |
Family
ID=41444505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010518018A Pending JPWO2009157439A1 (ja) | 2008-06-26 | 2009-06-23 | スパッタリング装置及びスパッタリング方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110048927A1 (ja) |
JP (1) | JPWO2009157439A1 (ja) |
KR (1) | KR20110033184A (ja) |
CN (1) | CN102066605A (ja) |
DE (1) | DE112009001534T5 (ja) |
TW (1) | TW201009105A (ja) |
WO (1) | WO2009157439A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012070195A1 (ja) * | 2010-11-24 | 2012-05-31 | 株式会社アルバック | スパッタリング方法 |
JP5693175B2 (ja) * | 2010-11-25 | 2015-04-01 | 株式会社アルバック | スパッタリング方法 |
JP2013001965A (ja) * | 2011-06-16 | 2013-01-07 | Ulvac Japan Ltd | スパッタリング方法 |
JP2013080779A (ja) * | 2011-10-03 | 2013-05-02 | Ulvac Japan Ltd | 半導体装置の製造方法、半導体装置 |
US9953813B2 (en) * | 2014-06-06 | 2018-04-24 | Applied Materials, Inc. | Methods and apparatus for improved metal ion filtering |
JP6509553B2 (ja) * | 2014-12-19 | 2019-05-08 | 株式会社アルバック | スパッタリング装置 |
CN115704087A (zh) * | 2021-08-04 | 2023-02-17 | 北京北方华创微电子装备有限公司 | 磁控溅射设备 |
CN113737143A (zh) * | 2021-08-24 | 2021-12-03 | 北海惠科半导体科技有限公司 | 磁控溅射装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60136230A (ja) * | 1983-12-24 | 1985-07-19 | Ulvac Corp | 基板表面の整形装置 |
JPS61246368A (ja) * | 1985-04-24 | 1986-11-01 | Nec Corp | 金属膜の堆積方法 |
JPH01132765A (ja) * | 1987-11-19 | 1989-05-25 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ装置 |
JPH10140346A (ja) * | 1996-11-13 | 1998-05-26 | Applied Materials Inc | プラズマスパッタ装置 |
JP2000144411A (ja) * | 1998-10-30 | 2000-05-26 | Applied Materials Inc | スパッタリング装置および成膜方法 |
JP2005002382A (ja) * | 2003-06-10 | 2005-01-06 | Applied Materials Inc | マグネトロンユニット及びスパッタリング装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6155200A (en) * | 1997-07-08 | 2000-12-05 | Tokyo Electron Limited | ECR plasma generator and an ECR system using the generator |
US6610184B2 (en) * | 2001-11-14 | 2003-08-26 | Applied Materials, Inc. | Magnet array in conjunction with rotating magnetron for plasma sputtering |
DE10018015A1 (de) * | 2000-04-11 | 2001-10-25 | Infineon Technologies Ag | Anordnung zur Durchführung eines plasmabasierten Verfahrens |
US6352629B1 (en) * | 2000-07-10 | 2002-03-05 | Applied Materials, Inc. | Coaxial electromagnet in a magnetron sputtering reactor |
US7504006B2 (en) * | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
US6841044B1 (en) * | 2002-08-28 | 2005-01-11 | Novellus Systems, Inc. | Chemically-enhanced physical vapor deposition |
US20060207871A1 (en) * | 2005-03-16 | 2006-09-21 | Gennady Yumshtyk | Sputtering devices and methods |
JP2008047661A (ja) | 2006-08-14 | 2008-02-28 | Seiko Epson Corp | 成膜装置及び半導体装置の製造方法 |
-
2009
- 2009-06-23 CN CN2009801239591A patent/CN102066605A/zh active Pending
- 2009-06-23 WO PCT/JP2009/061398 patent/WO2009157439A1/ja active Application Filing
- 2009-06-23 KR KR1020117000341A patent/KR20110033184A/ko not_active Application Discontinuation
- 2009-06-23 JP JP2010518018A patent/JPWO2009157439A1/ja active Pending
- 2009-06-23 DE DE112009001534T patent/DE112009001534T5/de not_active Withdrawn
- 2009-06-23 US US12/991,800 patent/US20110048927A1/en not_active Abandoned
- 2009-06-25 TW TW098121400A patent/TW201009105A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60136230A (ja) * | 1983-12-24 | 1985-07-19 | Ulvac Corp | 基板表面の整形装置 |
JPS61246368A (ja) * | 1985-04-24 | 1986-11-01 | Nec Corp | 金属膜の堆積方法 |
JPH01132765A (ja) * | 1987-11-19 | 1989-05-25 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ装置 |
JPH10140346A (ja) * | 1996-11-13 | 1998-05-26 | Applied Materials Inc | プラズマスパッタ装置 |
JP2000144411A (ja) * | 1998-10-30 | 2000-05-26 | Applied Materials Inc | スパッタリング装置および成膜方法 |
JP2005002382A (ja) * | 2003-06-10 | 2005-01-06 | Applied Materials Inc | マグネトロンユニット及びスパッタリング装置 |
Also Published As
Publication number | Publication date |
---|---|
US20110048927A1 (en) | 2011-03-03 |
KR20110033184A (ko) | 2011-03-30 |
WO2009157439A1 (ja) | 2009-12-30 |
DE112009001534T5 (de) | 2011-04-28 |
CN102066605A (zh) | 2011-05-18 |
TW201009105A (en) | 2010-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5373905B2 (ja) | 成膜装置及び成膜方法 | |
WO2009157439A1 (ja) | スパッタリング装置及びスパッタリング方法 | |
JP5550565B2 (ja) | スパッタリング装置及びスパッタリング方法 | |
JP4945566B2 (ja) | 容量結合型磁気中性線プラズマスパッタ装置 | |
JP5417437B2 (ja) | 成膜方法及び成膜装置 | |
TWI548766B (zh) | Sputtering device | |
JP5373904B2 (ja) | 成膜装置 | |
WO2009157438A1 (ja) | カソードユニット及びこのカソードユニットを備えたスパッタリング装置 | |
JP2013139642A (ja) | スパッタ成膜応用のためのプラズマ処理装置 | |
TWI386506B (zh) | 成膜裝置 | |
JP2007197840A (ja) | イオン化スパッタ装置 | |
JP2011256441A (ja) | スパッタリング方法 | |
JP5693175B2 (ja) | スパッタリング方法 | |
JP2011179068A (ja) | 金属薄膜の形成方法 | |
JP2011017088A (ja) | スパッタ成膜応用のためのプラズマ処理装置 | |
JP5795002B2 (ja) | スパッタリング方法 | |
JP2015178653A (ja) | スパッタリング装置及びスパッタリング方法 | |
JP2012001761A (ja) | 成膜装置及び成膜方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120515 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140106 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140204 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20140610 |