JP4646883B2 - Pvdターゲット構造体を製造する方法 - Google Patents
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3479—Detecting exhaustion of target material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3482—Detecting or avoiding eroding through
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Extrusion Moulding Of Plastics Or The Like (AREA)
- Metal Rolling (AREA)
Description
110 PVDターゲット(消耗スラブ)
120 フィラメント検出器
120’ 電極検出器
124 フィラメント
124a’電極
124b’ 電極
220 不活性ガス検出器
224 不活性ガス
440 検出器層
520 多管状検出器
520’ 多管状検出器
620 管状検出器
620’ 管状検出器
820 不活性ガス検出器または検出器層
940 バルク材料
941 孔
942 別個の管
950 成型/押し出しダイスの装置
951 外側部材
951a 外側部材の内面
952 内側部材
952a 内側部材の外面
980 可鍛性シート
980’ 可鍛性シート
981 管
981’ 管
982 対向する各端部
982’ 対向する各端部
Claims (6)
- バルク材を提供するステップと、
前記バルク材に複数の孔を形成するステップと、
各々1つの前記孔を備える複数の個々のユニットに、前記バルク材を分離するステップとによりバルク製造プロセスによる検出器の筐体を形成し、
前記筐体内に、フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体を提供するステップにより、消耗材料からなるPVDターゲットの耐用寿命の終点を検出する検出器を形成し、
前記フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体を提供するステップの後に、封止部で前記筐体を気密封止し、
前記PVDターゲット内のベース面に前記検出器を埋め込み、
PVD処理により前記PVDターゲットが所定量に接近しているか、もしくは、当該所定量にまで減量して、さらに前記筐体内の前記フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体にもPVD処理がされることで、前記フィラメント素子は電気抵抗が変化し、前記電極素子は電流を検出し、気密封止された前記不活性ガスは前記筺体から放出され、気密封止された、PVD処理結果に影響を与えない前記液体または固体は気化され前記筺体から放出されるPVDターゲット構造体を製造することを特徴とする方法。 - 前記孔はレーザドリル、高圧ウォータドリル、ウェットエッチングドリル、ドライエッチングドリル、または、これらの組み合わせによって形成され、
前記バルク材は、レーザ切断、高圧ウォータ切断、機械的切断、または、これらの組み合わせによって分離されることを特徴とする請求項1記載の方法。 - 所定形状の外面を備えた第1成型部材を提供するステップと、
前記第1成型部材の前記外面より上に材料層を形成するステップと、
前記第1成型部材から前記材料層を分離するステップとにより成型による検出器の筐体を形成し、
前記筐体内に、フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体を提供するステップにより、消耗材料からなるPVDターゲットの耐用寿命の終点を検出する検出器を形成し、
前記フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体を提供するステップの後に、封止部で前記筐体を気密封止し、
前記PVDターゲット内のベース面に前記検出器を埋め込み、
PVD処理により前記PVDターゲットが所定量に接近しているか、もしくは、当該所定量にまで減量して、さらに前記筐体内の前記フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体にもPVD処理がされることで、前記フィラメント素子は電気抵抗が変化し、前記電極素子は電流を検出し、気密封止された前記不活性ガスは前記筺体から放出され、気密封止された、PVD処理結果に影響を与えない前記液体または固体は気化され前記筺体から放出されるPVDターゲット構造体を製造することを特徴とする方法。 - 前記材料層が、物理的気相成長法、電気的化学めっき法、鋳造、押し出し、または、これらの組み合わせによって形成されることを特徴とする請求項3記載の方法。
- 前記第1成型部材を提供し、前記材料層の外面を形成する所定形状の内面を備えた第2成型部材を提供するステップと、
前記材料層は、前記第1成型部材および第2成型部材から分離され、前記検出器の筐体を前記材料層により形成するステップとにより、成型による前記検出器の筐体を形成したことを特徴とする請求項3記載の方法。 - 所定形状の外面を備えた成型部材を提供するステップと、
前記成型部材の外面上に材料シートを形成するステップと、
前記シートの対向する各端部を互いに結合するステップとにより材料シートによる前記検出器の筐体を形成し、
前記筐体内に、フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体を提供するステップにより、消耗材料からなるPVDターゲットの耐用寿命の終点を検出する検出器を形成し、
前記フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体を提供するステップの後に、封止部で前記筐体を気密封止し、
前記PVDターゲット内のベース面に前記検出器を埋め込み、
PVD処理により前記PVDターゲットが所定量に接近しているか、もしくは、当該所定量にまで減量して、さらに前記筐体内の前記フィラメント素子、電極素子、不活性ガス、またはPVD処理結果に影響を与えない液体または固体にもPVD処理がされることで、前記フィラメント素子は電気抵抗が変化し、前記電極素子は電流を検出し、気密封止された前記不活性ガスは前記筺体から放出され、気密封止された、PVD処理結果に影響を与えない前記液体または固体は気化され前記筺体から放出されるPVDターゲット構造体を製造することを特徴とする方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72039005P | 2005-09-26 | 2005-09-26 | |
US72872405P | 2005-10-20 | 2005-10-20 | |
US11/427,618 US7891536B2 (en) | 2005-09-26 | 2006-06-29 | PVD target with end of service life detection capability |
Publications (2)
Publication Number | Publication Date |
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JP2007092174A JP2007092174A (ja) | 2007-04-12 |
JP4646883B2 true JP4646883B2 (ja) | 2011-03-09 |
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JP2006259236A Active JP4646883B2 (ja) | 2005-09-26 | 2006-09-25 | Pvdターゲット構造体を製造する方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7891536B2 (ja) |
JP (1) | JP4646883B2 (ja) |
KR (1) | KR100827748B1 (ja) |
SG (1) | SG131006A1 (ja) |
TW (1) | TWI319440B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070068796A1 (en) * | 2005-09-26 | 2007-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of using a target having end of service life detection capability |
US8795486B2 (en) * | 2005-09-26 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | PVD target with end of service life detection capability |
US7891536B2 (en) | 2005-09-26 | 2011-02-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target with end of service life detection capability |
JP2009245988A (ja) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法 |
DE102010052341B4 (de) * | 2010-11-25 | 2015-02-12 | Von Ardenne Gmbh | Schutzvorrichtung an Rohrtargets |
US20130206589A1 (en) * | 2012-02-14 | 2013-08-15 | Solar Applied Materials Technology Corp. | Sputtering Target Having Alarm Function |
US10060023B2 (en) | 2012-10-19 | 2018-08-28 | Infineon Technologies Ag | Backing plate for a sputter target, sputter target, and sputter device |
DE102013011068A1 (de) * | 2013-07-03 | 2015-01-08 | Oerlikon Trading Ag, Trübbach | Targetalter-Kompensationsverfahren zur Durchführung von stabilen reaktiven Sputterverfahren |
US10041868B2 (en) * | 2015-01-28 | 2018-08-07 | Lam Research Corporation | Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber |
US9791415B2 (en) | 2015-06-25 | 2017-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for monitoring usage of a physical vapor deposition (PVD) target with an ultrasonic transducer |
CN109825810A (zh) * | 2019-04-04 | 2019-05-31 | 浙江工业大学 | 一种真空镀膜溅射靶材镀穿警报装置 |
US11424111B2 (en) | 2020-06-25 | 2022-08-23 | Taiwan Semiconductor Manufacturing Company Limited | Sputtering target assembly to prevent overetch of backing plate and methods of using the same |
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- 2006-09-19 KR KR1020060090403A patent/KR100827748B1/ko active IP Right Grant
- 2006-09-25 JP JP2006259236A patent/JP4646883B2/ja active Active
- 2006-09-26 TW TW095135498A patent/TWI319440B/zh not_active IP Right Cessation
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2011
- 2011-02-07 US US13/022,221 patent/US20110126397A1/en not_active Abandoned
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US7891536B2 (en) | 2011-02-22 |
US20110126397A1 (en) | 2011-06-02 |
KR20070034935A (ko) | 2007-03-29 |
TWI319440B (en) | 2010-01-11 |
JP2007092174A (ja) | 2007-04-12 |
TW200712235A (en) | 2007-04-01 |
SG131006A1 (en) | 2007-04-26 |
US8276648B2 (en) | 2012-10-02 |
US20120131784A1 (en) | 2012-05-31 |
KR100827748B1 (ko) | 2008-05-07 |
US20070068804A1 (en) | 2007-03-29 |
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