TWI458844B - 修飾後濺鍍標靶及沈積元件,及其製造與使用方法 - Google Patents
修飾後濺鍍標靶及沈積元件,及其製造與使用方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 31
- 238000000151 deposition Methods 0.000 title claims description 24
- 230000008021 deposition Effects 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000005477 sputtering target Methods 0.000 title 1
- 238000000059 patterning Methods 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000010297 mechanical methods and process Methods 0.000 claims 2
- 230000005226 mechanical processes and functions Effects 0.000 claims 2
- 230000012447 hatching Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- CQKBIUZEUFGQMZ-UHFFFAOYSA-N [Ru].[Au] Chemical compound [Ru].[Au] CQKBIUZEUFGQMZ-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 238000004901 spalling Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- IHWJXGQYRBHUIF-UHFFFAOYSA-N [Ag].[Pt] Chemical compound [Ag].[Pt] IHWJXGQYRBHUIF-UHFFFAOYSA-N 0.000 description 1
- VJRVSSUCOHZSHP-UHFFFAOYSA-N [As].[Au] Chemical compound [As].[Au] VJRVSSUCOHZSHP-UHFFFAOYSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- JDNQIVVMUDFBLD-UHFFFAOYSA-N [Ni][In][Au] Chemical compound [Ni][In][Au] JDNQIVVMUDFBLD-UHFFFAOYSA-N 0.000 description 1
- 229910052768 actinide Inorganic materials 0.000 description 1
- 150000001255 actinides Chemical class 0.000 description 1
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 1
- SOWHJXWFLFBSIK-UHFFFAOYSA-N aluminum beryllium Chemical compound [Be].[Al] SOWHJXWFLFBSIK-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- LNGCCWNRTBPYAG-UHFFFAOYSA-N aluminum tantalum Chemical compound [Al].[Ta] LNGCCWNRTBPYAG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
- Y10T29/532—Conductor
- Y10T29/53204—Electrode
Description
該標的物之領域係濺鍍標靶及沈積元件,包含經圖案修飾及/或紋理化修飾之線圈與相關器件及裝置以除其他益處外還改良該元件之效能及/或給該元件添加壽命。
此申請案主張2008年1月31日申請之待決美國臨時申請案第61/025,144號之優先權,該申請案以全文引用的方式併入本文中。
沈積方法係利用來跨越基板表面形成材料薄膜。例如,可在半導體製作製程中利用沈積方法來形成最終用於製作積體電路結構及器件之層。本發明所涵蓋之沈積方法之實例包含化學氣相沈積(CVD)、原子層沈積(ALD)、有機金屬化學氣相沈積(MOCVD)及物理氣相沈積(PVD)。PVD方法包含濺鍍製程。
室系統元件可包含標靶凸緣、標靶側壁、屏蔽物、蓋環、線圈、杯、銷子及/或夾具。該等元件可以若干方法來修飾以改良其用作粒子陷阱之能力且亦減少與粒子形成相關聯之問題。舉例而言,序號為10/614806、10/837555及10/985316之美國專利申請案連同序號為60/477810、60/498036及60/396543之美國臨時申請案(該等申請案皆為漢威國際公司(Honeywell International Inc.)所共同擁有且以全文引用的方式併入本文中)揭示藉由在一沈積室內的一或多個表面上形成一彎曲漩渦圖案而形成一用於粒子截留之陷阱。
明茨(Mintz)之US 5391275教示一種在於物理氣相沈積製程中使用之前製備一屏蔽物及/或夾持環之方法,首先對屏蔽物及/或夾持環進行鋼珠噴沙處理且接著於一超聲波清潔室中處理以移除鬆散粒子。隨後藉助電漿濺鍍蝕刻或處理該元件。在專欄2頁,第31-37行中,明茨表明"鋼珠噴砂步驟使得屏蔽物及/或夾持環之表面不規則"。此增強所沈積材料在亞顯微標度上之界面斷裂傳播且妨礙所沈積材料之剝落。該表面不規則性迫使一破裂沿一薄弱平面傳播以改變方向或穿過一更強區域。
小山(Koyama)之US 5837057參考文獻揭示一薄膜形成裝置,其利用一或多個單獨粒子防護板來控制室或裝置內之粒子。小山藉由在裝置內插入防護板來解決粒子問題。小山未處理已存在之室或裝置之表面以形成大規模之捕集區域。小山揭示形成具有一"斜度"之突出部一此意指該等突出部係傾斜的。
一個所涵蓋之室元件係一線圈或線圈組,諸如由漢威電子材料(Honeywell Electronic Materials)製造之彼等,其係置放於濺鍍室或離子化電漿裝置內之消耗產品,以重定向經濺鍍之原子及/或分子以在一基板及/或合適之表面上形成一更均勻之薄膜及/或層。出於先前技術之目的,此等系統及/或沈積裝置中所存在之線圈作為一電感耦合器件以形成一充足密度之次級電漿來離子化自標靶濺鍍之金屬原子中之至少某些金屬原子。在一離子化金屬電漿系統中,初級電漿形成且通常由磁控管限制在標靶附近,且隨後導致原子(例如,Ti原子)被自標靶表面驅逐出。藉由線圈系統形成之次級電漿製造Ti、Cu及Ta離子(此取決於被濺鍍之材料)。此等金屬離子隨後藉由形成於基板(晶圓)表面處之鞘中之場而被吸引至晶圓。本文所用術語"鞘"意指形成於一電漿及任一固體表面之間的一邊界層。此場可藉由向晶圓及/或基板施加一偏壓來控制。
習用線圈係懸掛於陶瓷電絕緣體上以防止線圈電位短接至附接至製程室壁之處理室屏蔽物,且因此處在接地電位。金屬電漿將塗佈陶瓷絕緣體且形成一短路。屏蔽物(其形成為杯形狀)置於陶瓷周圍以提供一自電漿至陶瓷之光學緻密路徑,而此將防止金屬在陶瓷上之沈積。通常,一包圍陶瓷之小杯狀屏蔽物係附接至線圈且一較大杯狀屏蔽物係附接至該較小杯狀屏蔽物,以使該等杯彼此電隔離但共同工作以屏蔽陶瓷。在熱應力下,線圈擴展且減少線圈之背側與外側杯狀屏蔽物之邊緣之間的名義間隙,從而形成一短路且干擾基板上之沈積製程。
除以上所述之彼等問題及電位缺陷外,物理氣相沈積(PVD)期間之粒子產生係在微電子器件製作中減小功能晶片良率之若干最有害因素中之一者。在PVD系統中,粒子主要產生於沈積物堆積在周圍室元件上且特定而言在正用於離子化金屬電漿(IMP)及自離子化電漿(SIP)濺鍍系統之線圈上發生斷裂所誘發之應力時。沈積主要發生在此等線圈之頂部。
習用線圈及線圈組可難以製造,此乃因將使用之金屬或金屬合金棒之大小。因此,希望開發較佳形狀及大小之線圈以用於一沈積裝置、一濺鍍室系統及/或離子化電漿沈積系統而不導致短接、對沈積製程之干擾或不合適之金屬沈積。亦希望確保此等新線圈及線圈組將具有一相對於所使用之標靶之類似壽命,此乃因降低線圈、線圈組與標靶之間的壽命差異將至少能降低在更換線圈及標靶兩者之前必須使裝置及系統停車來更換線圈之次數。
亦希望給一元件(其包含一更均勻、更整潔、更健壯之線圈或線圈組)添加紋理,以製造一滿足粗糙度要求同時維持再磨光能力之元件。US 6812471揭示修飾後線圈及線圈組且使用一電磁能束以施加紋理。WO 2007/030824 A2利用形成有心軸之流來添加紋理。然而,此等方法皆不能達成前述之目標。另外,預期所涵蓋之修飾後元件及線圈不具有與其他表面紋理化方法相關聯之相同剝落問題。
基於習用系統及當前技術水平,希望開發且利用一沈積裝置及一濺鍍室系統,其將藉由利用一更均勻、更整潔及更健壯之線圈或線圈組使一表面及/或基板上之塗層、薄膜或沈積物之均勻性最大化,且亦維持粗糙度要求及再磨光之能力。
本文闡述沈積裝置,其包含至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合,其中該至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合包括一表面,且其中該表面之至少一部分包括一規則深度圖案。
本文亦揭示製造一線圈、線圈組、至少一標靶相關裝置或一線圈相關裝置之方法,其包括:提供至少一線圈、至少一線圈組、至少一線圈相關裝置至少一標靶相關裝置或其一組合,其中該至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合包括一表面;提供一圖案化工具;及利用該圖案化工具在該表面之至少一部分中形成一規則深度圖案。
亦已開發出較佳形狀及大小之線圈,其係最終用於一沈積裝置,一濺鍍室系統及/或離子化電漿沈積系統之更具成本效率之線圈及線圈組,而不導致短接、對沈積製程之干擾或不合適之金屬沈積。已開發及利用了所涵蓋之沈積裝置及濺鍍室系統,該所涵蓋之沈積裝置及濺鍍室系統藉由利用一係更均勻、更整潔及更健壯之線圈或線圈組使一表面及/或基板上之塗層、薄膜或沈積物之均勻性最大化,同時亦維持粗糙度要求及維持再磨光之能力。
此等新線圈及線圈組具有一相對於將使用之標靶之類似壽命,此乃因降低線圈、線圈組與標靶之間的壽命差異會降低在更換線圈及標靶兩者之前必須使裝置或系統停車來更換線圈之次數。
具體而言,一所涵蓋沈積裝置包括至少一線圈、至少一線圈組、至少一相關元件或其一組合,其包括一經特定設計及規劃之紋理幾何形狀以便達成本文所闡述之所有設計及效能目標。此經特定設計及規劃之紋理幾何形狀修正關於涉及如早先所述粗糙化之技術之問題。所涵蓋之沈積裝置包括至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合,其中該至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合包括一表面,且其中該表面之至少一部分包括一規則深度圖案。
本文亦揭示製造一線圈,線圈組或一線圈相關裝置及/或標靶相關裝置之方法,其包括:提供至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合,其中該至少一線圈、至少一線圈組、至少一線圈相關裝置、至少一標靶相關裝置或其一組合包括一表面;提供一圖案化工具;及利用該圖案化工具在該表面之至少一部分中形成一規則深度圖案。如本文中所使用,線圈相關及標靶相關裝置包含標靶凸緣、標靶側壁、屏蔽物、蓋環、杯、銷子及/或夾具。
在所涵蓋之實施例中,在不使用粗糙化技術(例如,鋼珠噴砂)之情形下且在隨後不使用隨機蝕刻步驟之情形下,給元件施加受控且特定紋理幾何形狀或結構化表面。所涵蓋之紋理幾何形狀包含特定及標靶圖案,其包含菱形或交叉陰影線圖案,諸如圖1(其係一所涵蓋圖案100之一表示)中及圖2(其係一顯示圖案210之實際表面200)中所示之一者。
可利用任何合適工具(包含機械工具)或減性方法來形成本文中所揭示之具有規則深度圖案之唯一特定及標靶圖案。一合適工具包括達成所涵蓋及所請求之所需粗糙度之任何機械圖案化工具。圖3自一側310及底部320透視地顯示一所涵蓋之圖案化工具-在此情形中係一滾花工具。圖中將握把330及切削機構340連同切削刀片350一起顯示。應瞭解鋼珠噴砂或隨機蝕刻製程將不形成本文中所揭示之特定圖案。
所涵蓋之圖案化工具及製程產生具有一平均深度圖案(其係至少一0.350mm 25深之平均數)之元件紋理幾何形狀。在一些實施例中,所涵蓋之元件紋理幾何形狀係至少一0.380mm深之平均數。在其他實施例中,所涵蓋之元件紋理幾何形狀具有一係至少一0.400mm深之平均數之平均深度圖案。在又其他實施例中,所涵蓋之元件紋理幾何形狀具有一係至少一0.500mm深之平均數之平均深度圖案。在一些實施例中,所涵蓋之元件紋理幾何形狀具有一係小於一1.143mm深之平均數之平均深度圖案。如本文中所使用,關於紋理幾何形狀之深度之短語"至少一平均數"係意指在紋理幾何形狀之長度上之平均深度係至少與所規定的一樣深。一些區可以係0.450mm且一些區可以係0.520mm深,但其平均數係在本文所規定之範圍內。
嚴格控制此等藉由一滾花工具及製程或類似器件/方法形成之具有規則深度之圖案,紋理幾何形狀及/或結構化表面,從而產生一更整潔、更一致之表面紋理。可在使用後再磨光此等元件及線圈,此不同於使用替代表面紋理之線圈之再磨光,此會產生可在使用期間導致拱起或剝落之鋸齒狀邊緣。
本文所涵蓋之元件可通常包括任何可可靠地形成為一沈積系統元件之材料。用以製造適合元件之所涵蓋材料係金屬、金屬合金、硬遮罩材料及任何其他適合材料。
本文中所用術語"金屬"意指彼等位於元素週期表之d-20區塊及f區塊之元素,以及彼等具有金屬樣性質之元素,例如矽及鍺。本文中所用短語"d區塊"意指彼等具有填充圍繞元素之核的3d、4d、5d及6d軌道之電子之元素。本文中所用短語"f區塊"意指彼等具有填充圍繞元素之核的4f及5f軌道之電子之元素,包含鑭系元素及錒系元素。一些所涵蓋之金屬包含鉭、鈷、銅、銦、鎵、硒、鎳、鐵、鋅、鋁及基於鋁之材料、錫、金、銀,或其一組合。其他所涵蓋之金屬包含銅、鋁、鈷、鎂、錳、鐵或其一組合。
術語"金屬"亦包含合金。本文中所涵蓋之合金包括金、銻、鋁、銅、鎳、銦、鈷、釩、鐵、鈦、鋯、銀、錫、鋅、錸、及其若干組合。特定合金包含金銻、金砷、金錋、金銅、金鍺、金鎳、金鎳銦、金鈀、金矽、金銀鉑、金鉭、金錫、金鋅、鈀鋰、鈀錳、銀銅、銀鎵、銀金、鋁銅、鋁矽、鋁矽銅、鋁鈦、鉻銅,及/或其若干組合。在一些實施例中,所涵蓋之材料包含彼等揭示於由Honeywell International公司共同擁有之美國專利第6331233中之材料,且該申請案以全文引用的方式併入本文中。
本文中所涵蓋之金屬及合金亦可包括少量其他金屬。此等金屬可係在某些元件形成中自然發生的或可係在標靶製造期間添加的。本發明涵蓋此等金屬不使總體元件性質改變或經設計以改良元件性質。
因此,本文已揭示製造沈積系統元件及相關裝置之方法之特定實施例及應用。然而,熟悉此項技術者應瞭解,除彼等已闡述者外還可能存在多種修改,而此不背離本文中之發明性概念。因此,本發明標的物除了受限於本文中揭示內容之精神外並不受其他限制。此外,在解釋本揭示內容時,所有術語皆應以與上下文一致之最寬廣之可能方式加以解釋。特定而言,術語"包括"(comprises)和"包括"(comprising)應解釋為以非排他方式提及元素、元件或步驟,即,指示所提及之元素、元件或步驟可與其他未明確提及之元素、元件或步驟一同存在、或使用或相結合。
100...所涵蓋之圖案
200...實際表面
210...圖案
310...側
320...底部
330...握把
340...切削機構
350...切削刀片
圖1係一所涵蓋圖案之一表示。
圖2顯示一顯示圖案之實際表面。
圖3A及3B自一側(3A)及底部(3B)兩者透視地顯示一所涵蓋之滾花工具。
100...所涵蓋之圖案
Claims (20)
- 一種製造用於一沈積系統之一線圈、線圈組或一線圈相關裝置之方法,其包括:提供用於該沈積系統之至少一線圈、至少一線圈組、至少一線圈相關裝置,或其一組合,其中該至少一線圈、至少一線圈組、至少一線圈相關裝置或其一組合包括一表面,提供一機械圖案化工具;及利用該圖案化工具以在該表面之至少一部分中形成一特定圖案,其中該圖案具有一深度,其中該圖案之該深度係至少0.350mm,其中該特定圖案未被蝕刻,且其中該特定圖案包含一菱形圖案,一交叉陰影線圖案或其一組合。
- 如請求項1之方法,其中利用該圖案化工具以形成一特定圖案包含滾花該表面。
- 如請求項1之方法,其中該圖案之該平均深度係至少0.400mm。
- 如請求項1之方法,其中該圖案之該平均深度係小於1.143mm。
- 如請求項1之方法,其中該機械圖案化工具包含一滾花工具。
- 如請求項1之方法,其中該特定圖案係自一機械製程形成。
- 如請求項1之方法,其中該特定圖案係均勻的。
- 線圈組或一線圈相關裝置,其藉由請求項1之方法所製成。
- 一種用於一沈積製程的線圈、線圈組、至少一線圈相關裝置或其一組合,包含一表面,其中該表面的至少一部分包含具有一深度的一滾花圖案,其中該平均深度係至少0.350mm,且其中該滾花圖案未被蝕刻。
- 一種用於一沈積製程的線圈、線圈組、至少一線圈相關裝置或其一組合,包含一表面,其中該表面的至少一部分由具有一深度的一滾花圖案構成,其中該平均深度係至少0.350mm,且其中該滾花圖案未被蝕刻。
- 一種用於一沈積製程的標靶、標靶相關裝置或其一組合,包含一表面,其中該表面的至少一部分包含具有一深度的一滾花圖案,其中該平均深度係至少0.350mm,且其中該滾花圖案未被蝕刻。
- 一種用於一沈積製程的標靶、標靶相關裝置或其一組合,包含一表面,其中該表面的至少一部分由具有一深度的一滾花圖案構成,其中該平均深度係至少0.350mm,且其中該滾花圖案未被蝕刻。
- 一種用於一沈積製程的線圈、線圈組、至少一線圈相關裝置或其一組合,包含一表面,其中該表面的至少一部分包含具有一深度的一特定圖案,其中該平均深度係至少0.350mm,其中該特定圖案未被蝕刻,且其中該特定圖案包含一菱形圖案,一交叉陰影線圖案或其一組合。
- 一種用於一沈積製程的標靶、標靶相關裝置或一組合, 包含一表面,其中該表面的至少一部分包含具有一深度的一特定圖案,其中該平均深度係至少0.350mm,其中該特定圖案未被蝕刻,且其中該特定圖案包含一菱形圖案,一交叉陰影線圖案或其一組合。
- 一種製造用於一沈積系統之一線圈、線圈組或一線圈相關裝置之方法,其包括:提供用於該沈積系統之至少一線圈、至少一線圈組、至少一線圈相關裝置,或其一組合,其中該至少一線圈、至少一線圈組、至少一線圈相關裝置或其一組合包括一表面,提供一機械圖案化工具;及利用該圖案化工具以在該表面之至少一部分中形成一特定圖案,其中該圖案具有一深度,其中該圖案之該深度係至少0.350mm,其中該特定圖案未被蝕刻,且其中該特定圖案包含一滾花圖案。
- 如請求項15之方法,其中該圖案之該平均深度係至少0.400mm。
- 如請求項15之方法,其中該圖案之該平均深度係小於1.143mm。
- 如請求項15之方法,其中該機械圖案化工具包含一滾花工具。
- 如請求項15之方法,其中該特定圖案係自一機械製程形成。
- 如請求項15之方法,其中該特定圖案係均勻的。
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Also Published As
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KR20140027534A (ko) | 2014-03-06 |
US20090194414A1 (en) | 2009-08-06 |
WO2009099775A3 (en) | 2009-10-22 |
KR20100114901A (ko) | 2010-10-26 |
JP2014111841A (ja) | 2014-06-19 |
WO2009099775A2 (en) | 2009-08-13 |
EP2255023A2 (en) | 2010-12-01 |
JP2011511161A (ja) | 2011-04-07 |
TW200946704A (en) | 2009-11-16 |
WO2009099775A4 (en) | 2009-12-23 |
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