JP5044541B2 - 気相堆積用途に利用されるコイルおよび生産方法 - Google Patents
気相堆積用途に利用されるコイルおよび生産方法 Download PDFInfo
- Publication number
- JP5044541B2 JP5044541B2 JP2008503003A JP2008503003A JP5044541B2 JP 5044541 B2 JP5044541 B2 JP 5044541B2 JP 2008503003 A JP2008503003 A JP 2008503003A JP 2008503003 A JP2008503003 A JP 2008503003A JP 5044541 B2 JP5044541 B2 JP 5044541B2
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- Prior art keywords
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- thickness
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (5)
- 気相堆積システムで利用するためのコイルアセンブリであって、
直径、内側縁部、外側縁部、頂縁部、および厚さを有する少なくとも1つの環状コイルを備え、コイルの厚さが、内側縁部と外側縁部との間の直径にわたってとられた断面で測定され、対象のコイルの厚さが、コイルの頂縁部で内側縁部から外側縁部まである角度で減少されている、コイルアセンブリ。 - 対象のコイルが、金属または合金を含む、請求項1に記載のコイルアセンブリ。
- コイルの第1の部分の厚さが、コイルの最大厚さと比較して少なくとも20%減少されている、請求項1に記載のコイルアセンブリ。
- 前記頂縁部が点からなることを特徴とする請求項1に記載のコイルアセンブリ。
- 前記外側縁部が前記点までまっすぐであることを特徴とする請求項4に記載のコイルアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/086,022 US9659758B2 (en) | 2005-03-22 | 2005-03-22 | Coils utilized in vapor deposition applications and methods of production |
US11/086,022 | 2005-03-22 | ||
PCT/US2006/007693 WO2006101693A2 (en) | 2005-03-22 | 2006-03-01 | Coils utilized in vapor deposition applications and methods of production |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008534777A JP2008534777A (ja) | 2008-08-28 |
JP5044541B2 true JP5044541B2 (ja) | 2012-10-10 |
Family
ID=37024296
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008503003A Expired - Fee Related JP5044541B2 (ja) | 2005-03-22 | 2006-03-01 | 気相堆積用途に利用されるコイルおよび生産方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9659758B2 (ja) |
EP (1) | EP1861518A2 (ja) |
JP (1) | JP5044541B2 (ja) |
KR (1) | KR20070113278A (ja) |
CN (1) | CN101146928A (ja) |
TW (1) | TWI429774B (ja) |
WO (1) | WO2006101693A2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2429834C (en) * | 2005-09-02 | 2011-08-24 | Nanobeam Ltd | Coil former |
CN102791903B (zh) | 2010-03-29 | 2015-04-01 | 吉坤日矿日石金属株式会社 | 溅射用钽制线圈及该线圈的加工方法 |
CN103748258A (zh) | 2011-09-30 | 2014-04-23 | 吉坤日矿日石金属株式会社 | 溅射用钽制线圈的再生方法及通过该再生方法得到的钽制线圈 |
Family Cites Families (134)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2586007A (en) * | 1947-03-20 | 1952-02-19 | Heli Coil Corp | Wire coil insert with tapered end |
JP2602276B2 (ja) * | 1987-06-30 | 1997-04-23 | 株式会社日立製作所 | スパツタリング方法とその装置 |
JPH02133570A (ja) | 1988-11-10 | 1990-05-22 | Anelva Corp | 複合体のスパッタ装置 |
JP2507665B2 (ja) | 1989-05-09 | 1996-06-12 | 株式会社東芝 | 電子管用金属円筒部材の製造方法 |
US5391275A (en) | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
US5178739A (en) | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
JPH06188108A (ja) | 1992-12-21 | 1994-07-08 | Canon Inc | 薄膜抵抗器の製造方法、成膜装置用防着板及び成膜装置 |
US5446269A (en) * | 1993-05-27 | 1995-08-29 | Inductotherm Corp. | Tubing shape, particularly for fabricating an induction coil |
TW273067B (ja) * | 1993-10-04 | 1996-03-21 | Tokyo Electron Co Ltd | |
US5522245A (en) | 1994-02-21 | 1996-06-04 | Calsonic Corporation | Device for producing metal rings |
US5474649A (en) | 1994-03-08 | 1995-12-12 | Applied Materials, Inc. | Plasma processing apparatus employing a textured focus ring |
US6368469B1 (en) | 1996-05-09 | 2002-04-09 | Applied Materials, Inc. | Coils for generating a plasma and for sputtering |
US6254746B1 (en) * | 1996-05-09 | 2001-07-03 | Applied Materials, Inc. | Recessed coil for generating a plasma |
KR100489918B1 (ko) | 1996-05-09 | 2005-08-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마발생및스퍼터링용코일 |
US5993594A (en) | 1996-09-30 | 1999-11-30 | Lam Research Corporation | Particle controlling method and apparatus for a plasma processing chamber |
US6254737B1 (en) | 1996-10-08 | 2001-07-03 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
US5961793A (en) | 1996-10-31 | 1999-10-05 | Applied Materials, Inc. | Method of reducing generation of particulate matter in a sputtering chamber |
US6451179B1 (en) | 1997-01-30 | 2002-09-17 | Applied Materials, Inc. | Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma |
JPH10237639A (ja) | 1997-02-24 | 1998-09-08 | Anelva Corp | 集積回路用バリア膜を作成するスパッタリング装置 |
TW386250B (en) | 1997-04-04 | 2000-04-01 | Applied Materials Inc | Method and apparatus for reducing the first wafer effect |
JP4435835B2 (ja) | 1997-05-06 | 2010-03-24 | キヤノンアネルバ株式会社 | スパッタリング装置 |
US6361661B2 (en) | 1997-05-16 | 2002-03-26 | Applies Materials, Inc. | Hybrid coil design for ionized deposition |
US6652717B1 (en) | 1997-05-16 | 2003-11-25 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
US6077402A (en) | 1997-05-16 | 2000-06-20 | Applied Materials, Inc. | Central coil design for ionized metal plasma deposition |
US6235169B1 (en) | 1997-08-07 | 2001-05-22 | Applied Materials, Inc. | Modulated power for ionized metal plasma deposition |
US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
US6162297A (en) | 1997-09-05 | 2000-12-19 | Applied Materials, Inc. | Embossed semiconductor fabrication parts |
US6042700A (en) | 1997-09-15 | 2000-03-28 | Applied Materials, Inc. | Adjustment of deposition uniformity in an inductively coupled plasma source |
US6285013B1 (en) | 1997-09-29 | 2001-09-04 | Nova Industries, Inc. | Heat coil support assembly and method |
US6315872B1 (en) | 1997-11-26 | 2001-11-13 | Applied Materials, Inc. | Coil for sputter deposition |
US6001227A (en) | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6139701A (en) | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
JP3310608B2 (ja) | 1998-01-22 | 2002-08-05 | アプライド マテリアルズ インコーポレイテッド | スパッタリング装置 |
US6506287B1 (en) | 1998-03-16 | 2003-01-14 | Applied Materials, Inc. | Overlap design of one-turn coil |
US6129808A (en) | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
US6464843B1 (en) | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
US6660134B1 (en) | 1998-07-10 | 2003-12-09 | Applied Materials, Inc. | Feedthrough overlap coil |
KR100292410B1 (ko) | 1998-09-23 | 2001-06-01 | 윤종용 | 불순물 오염이 억제된 반도체 제조용 반응 챔버 |
US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
GB2346155B (en) | 1999-01-06 | 2003-06-25 | Trikon Holdings Ltd | Sputtering apparatus |
WO2000041235A1 (en) | 1999-01-08 | 2000-07-13 | Applied Materials, Inc. | Method of depositing a copper seed layer which promotes improved feature surface coverage |
US6217718B1 (en) | 1999-02-17 | 2001-04-17 | Applied Materials, Inc. | Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma |
US6451181B1 (en) | 1999-03-02 | 2002-09-17 | Motorola, Inc. | Method of forming a semiconductor device barrier layer |
US6344105B1 (en) | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US6235163B1 (en) | 1999-07-09 | 2001-05-22 | Applied Materials, Inc. | Methods and apparatus for ionized metal plasma copper deposition with enhanced in-film particle performance |
US6371045B1 (en) | 1999-07-26 | 2002-04-16 | United Microelectronics Corp. | Physical vapor deposition device for forming a metallic layer on a semiconductor wafer |
US6168696B1 (en) | 1999-09-01 | 2001-01-02 | Micron Technology, Inc. | Non-knurled induction coil for ionized metal deposition, sputtering apparatus including same, and method of constructing the apparatus |
US6277253B1 (en) | 1999-10-06 | 2001-08-21 | Applied Materials, Inc. | External coating of tungsten or tantalum or other refractory metal on IMP coils |
US8696875B2 (en) | 1999-10-08 | 2014-04-15 | Applied Materials, Inc. | Self-ionized and inductively-coupled plasma for sputtering and resputtering |
US6610184B2 (en) | 2001-11-14 | 2003-08-26 | Applied Materials, Inc. | Magnet array in conjunction with rotating magnetron for plasma sputtering |
US6398929B1 (en) | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
US6244210B1 (en) | 1999-10-29 | 2001-06-12 | Advanced Micro Devices, Inc. | Strength coil for ionized copper plasma deposition |
US6200433B1 (en) | 1999-11-01 | 2001-03-13 | Applied Materials, Inc. | IMP technology with heavy gas sputtering |
US20010050220A1 (en) | 1999-11-16 | 2001-12-13 | Applied Materials, Inc. | Method and apparatus for physical vapor deposition using modulated power |
US6350353B2 (en) | 1999-11-24 | 2002-02-26 | Applied Materials, Inc. | Alternate steps of IMP and sputtering process to improve sidewall coverage |
US6344419B1 (en) | 1999-12-03 | 2002-02-05 | Applied Materials, Inc. | Pulsed-mode RF bias for sidewall coverage improvement |
US6627056B2 (en) | 2000-02-16 | 2003-09-30 | Applied Materials, Inc. | Method and apparatus for ionized plasma deposition |
TW503442B (en) | 2000-02-29 | 2002-09-21 | Applied Materials Inc | Coil and coil support for generating a plasma |
US6461483B1 (en) | 2000-03-10 | 2002-10-08 | Applied Materials, Inc. | Method and apparatus for performing high pressure physical vapor deposition |
US20030210041A1 (en) | 2000-04-07 | 2003-11-13 | Le Cuong Duy | Eddy current measuring system for monitoring and controlling a chemical vapor deposition (CVD) process |
DE10018143C5 (de) | 2000-04-12 | 2012-09-06 | Oerlikon Trading Ag, Trübbach | DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems |
US6699375B1 (en) | 2000-06-29 | 2004-03-02 | Applied Materials, Inc. | Method of extending process kit consumable recycling life |
US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US7378001B2 (en) | 2000-07-27 | 2008-05-27 | Aviza Europe Limited | Magnetron sputtering |
US6830622B2 (en) | 2001-03-30 | 2004-12-14 | Lam Research Corporation | Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof |
JP3973857B2 (ja) | 2001-04-16 | 2007-09-12 | 日鉱金属株式会社 | マンガン合金スパッタリングターゲットの製造方法 |
US6824658B2 (en) | 2001-08-30 | 2004-11-30 | Applied Materials, Inc. | Partial turn coil for generating a plasma |
US7041201B2 (en) | 2001-11-14 | 2006-05-09 | Applied Materials, Inc. | Sidewall magnet improving uniformity of inductively coupled plasma and shields used therewith |
US7371467B2 (en) | 2002-01-08 | 2008-05-13 | Applied Materials, Inc. | Process chamber component having electroplated yttrium containing coating |
US6942929B2 (en) | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
US6812471B2 (en) | 2002-03-13 | 2004-11-02 | Applied Materials, Inc. | Method of surface texturizing |
US6933508B2 (en) | 2002-03-13 | 2005-08-23 | Applied Materials, Inc. | Method of surface texturizing |
KR100846484B1 (ko) | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rmim 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치 |
US7026009B2 (en) | 2002-03-27 | 2006-04-11 | Applied Materials, Inc. | Evaluation of chamber components having textured coatings |
US20030188685A1 (en) | 2002-04-08 | 2003-10-09 | Applied Materials, Inc. | Laser drilled surfaces for substrate processing chambers |
US7163603B2 (en) | 2002-06-24 | 2007-01-16 | Tokyo Electron Limited | Plasma source assembly and method of manufacture |
US7311797B2 (en) | 2002-06-27 | 2007-12-25 | Lam Research Corporation | Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor |
US7252738B2 (en) | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US7311784B2 (en) | 2002-11-26 | 2007-12-25 | Tokyo Electron Limited | Plasma processing device |
US7791005B2 (en) | 2003-02-28 | 2010-09-07 | Honeywell International, Inc. | Coil constructions configured for utilization in physical vapor deposition chambers, and methods of forming coil constructions |
US7455748B2 (en) | 2003-06-20 | 2008-11-25 | Lam Research Corporation | Magnetic enhancement for mechanical confinement of plasma |
US6969953B2 (en) | 2003-06-30 | 2005-11-29 | General Electric Company | System and method for inductive coupling of an expanding thermal plasma |
US20050048876A1 (en) | 2003-09-02 | 2005-03-03 | Applied Materials, Inc. | Fabricating and cleaning chamber components having textured surfaces |
US7658816B2 (en) | 2003-09-05 | 2010-02-09 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
US20070056688A1 (en) | 2003-09-11 | 2007-03-15 | Jaeyeon Kim | Methods of treating deposition process components to form particle traps, and deposition process components having particle traps thereon |
US20050098427A1 (en) | 2003-11-11 | 2005-05-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | RF coil design for improved film uniformity of an ion metal plasma source |
US7220497B2 (en) | 2003-12-18 | 2007-05-22 | Lam Research Corporation | Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components |
WO2005062361A1 (en) | 2003-12-22 | 2005-07-07 | Adaptive Plasma Technology Corporation | Method for setting plasma chamber having an adaptive plasma source, plasma etching method using the same and manufacturing method for adaptive plasma source |
JP3981091B2 (ja) | 2004-03-01 | 2007-09-26 | 株式会社東芝 | 成膜用リングおよび半導体装置の製造装置 |
US20050236270A1 (en) | 2004-04-23 | 2005-10-27 | Heraeus, Inc. | Controlled cooling of sputter targets |
JP4503356B2 (ja) | 2004-06-02 | 2010-07-14 | 東京エレクトロン株式会社 | 基板処理方法および半導体装置の製造方法 |
US7618769B2 (en) | 2004-06-07 | 2009-11-17 | Applied Materials, Inc. | Textured chamber surface |
US7374648B2 (en) | 2004-06-28 | 2008-05-20 | Honeywell International Inc. | Single piece coil support assemblies, coil constructions and methods of assembling coil constructions |
KR100790392B1 (ko) | 2004-11-12 | 2008-01-02 | 삼성전자주식회사 | 반도체 제조장치 |
US7364623B2 (en) | 2005-01-27 | 2008-04-29 | Lam Research Corporation | Confinement ring drive |
US20060172542A1 (en) | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Method and apparatus to confine plasma and to enhance flow conductance |
WO2006093953A1 (en) | 2005-02-28 | 2006-09-08 | Tosoh Smd, Inc. | Sputtering target with an insulating ring and a gap between the ring and the target |
US7430986B2 (en) | 2005-03-18 | 2008-10-07 | Lam Research Corporation | Plasma confinement ring assemblies having reduced polymer deposition characteristics |
JP4854983B2 (ja) | 2005-04-19 | 2012-01-18 | 三菱商事プラスチック株式会社 | プラズマcvd成膜装置及びガスバリア性を有するプラスチック容器の製造方法 |
JP4933744B2 (ja) | 2005-04-26 | 2012-05-16 | 学校法人鶴学園 | 多重磁極マグネトロンスパッタリング成膜装置 |
JP2006319043A (ja) | 2005-05-11 | 2006-11-24 | Hitachi High-Technologies Corp | プラズマ処理装置 |
EP1902152B1 (en) | 2005-05-31 | 2010-06-23 | Corus Technology BV | Apparatus and method for coating a substrate |
KR100621778B1 (ko) | 2005-06-17 | 2006-09-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US20060292310A1 (en) | 2005-06-27 | 2006-12-28 | Applied Materials, Inc. | Process kit design to reduce particle generation |
US8038837B2 (en) | 2005-09-02 | 2011-10-18 | Tokyo Electron Limited | Ring-shaped component for use in a plasma processing, plasma processing apparatus and outer ring-shaped member |
US7762114B2 (en) | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
JP2007112641A (ja) | 2005-10-18 | 2007-05-10 | Toshiba Ceramics Co Ltd | フォーカスリング |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8790499B2 (en) | 2005-11-25 | 2014-07-29 | Applied Materials, Inc. | Process kit components for titanium sputtering chamber |
JP2007231392A (ja) | 2006-03-02 | 2007-09-13 | Tosoh Corp | 酸化物焼結体よりなるスパッタリングターゲットおよびその製造方法 |
US7988814B2 (en) | 2006-03-17 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus, plasma processing method, focus ring, and focus ring component |
JP4807120B2 (ja) | 2006-03-23 | 2011-11-02 | アイシン精機株式会社 | 超電導磁場発生装置及びスパッタリング成膜装置 |
US20070224709A1 (en) | 2006-03-23 | 2007-09-27 | Tokyo Electron Limited | Plasma processing method and apparatus, control program and storage medium |
EP1840933B1 (en) | 2006-03-27 | 2012-02-15 | Panasonic Corporation | Magnetron |
JP2007297699A (ja) | 2006-04-05 | 2007-11-15 | Olympus Corp | 表面処理装置、光学素子成形用型及び光学素子 |
JP2007277659A (ja) | 2006-04-10 | 2007-10-25 | Optorun Co Ltd | スパッタ成膜装置およびスパッタ成膜方法 |
JP4974362B2 (ja) | 2006-04-13 | 2012-07-11 | 株式会社アルバック | Taスパッタリングターゲットおよびその製造方法 |
US20070283884A1 (en) | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
JP4680841B2 (ja) | 2006-06-29 | 2011-05-11 | 日本ピストンリング株式会社 | Pvd用筒状ターゲット |
KR20080001164A (ko) | 2006-06-29 | 2008-01-03 | 주식회사 하이닉스반도체 | 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법 |
US20080041920A1 (en) * | 2006-07-20 | 2008-02-21 | Klaus Kirchhof | Assembly for the interconnection of at least two components by means of an assembly and a receptacle element |
JP4795174B2 (ja) | 2006-08-31 | 2011-10-19 | 新明和工業株式会社 | スパッタリング装置 |
US20080066868A1 (en) | 2006-09-19 | 2008-03-20 | Tokyo Electron Limited | Focus ring and plasma processing apparatus |
JP2008103403A (ja) | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | 基板載置台及びプラズマ処理装置 |
JP2008108540A (ja) | 2006-10-25 | 2008-05-08 | Matsushita Electric Ind Co Ltd | マグネトロン |
JP4473852B2 (ja) | 2006-11-07 | 2010-06-02 | 株式会社大阪真空機器製作所 | スパッタ装置及びスパッタ方法 |
JP2008118015A (ja) | 2006-11-07 | 2008-05-22 | Toshiba Matsushita Display Technology Co Ltd | フォーカスリングおよびプラズマ処理装置 |
US8941037B2 (en) | 2006-12-25 | 2015-01-27 | Tokyo Electron Limited | Substrate processing apparatus, focus ring heating method, and substrate processing method |
US20080156264A1 (en) | 2006-12-27 | 2008-07-03 | Novellus Systems, Inc. | Plasma Generator Apparatus |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
JP2008188647A (ja) | 2007-02-06 | 2008-08-21 | Calsonic Kansei Corp | ディンプル付きチューブの製造方法 |
US20080196661A1 (en) | 2007-02-20 | 2008-08-21 | Brian West | Plasma sprayed deposition ring isolator |
WO2008134516A2 (en) | 2007-04-27 | 2008-11-06 | Honeywell International Inc. | Novel manufacturing design and processing methods and apparatus for sputtering targets |
JP2007277730A (ja) | 2007-07-13 | 2007-10-25 | Ulvac Japan Ltd | スパッタリング装置 |
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2005
- 2005-03-22 US US11/086,022 patent/US9659758B2/en not_active Expired - Fee Related
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2006
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- 2006-03-01 WO PCT/US2006/007693 patent/WO2006101693A2/en active Application Filing
- 2006-03-01 CN CNA2006800091536A patent/CN101146928A/zh active Pending
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WO2006101693A2 (en) | 2006-09-28 |
EP1861518A2 (en) | 2007-12-05 |
TWI429774B (zh) | 2014-03-11 |
TW200710242A (en) | 2007-03-16 |
US9659758B2 (en) | 2017-05-23 |
WO2006101693A3 (en) | 2007-10-18 |
KR20070113278A (ko) | 2007-11-28 |
JP2008534777A (ja) | 2008-08-28 |
CN101146928A (zh) | 2008-03-19 |
US20060213769A1 (en) | 2006-09-28 |
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