JP5395370B2 - 半導体装置製造用基板の作製方法 - Google Patents
半導体装置製造用基板の作製方法 Download PDFInfo
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- JP5395370B2 JP5395370B2 JP2008148061A JP2008148061A JP5395370B2 JP 5395370 B2 JP5395370 B2 JP 5395370B2 JP 2008148061 A JP2008148061 A JP 2008148061A JP 2008148061 A JP2008148061 A JP 2008148061A JP 5395370 B2 JP5395370 B2 JP 5395370B2
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- substrate
- insulating film
- semiconductor
- silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
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- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
本形態に係る半導体装置製造用基板はSOI構造を有し、半導体基板から分離させた半導体膜を支持基板に転置して形成する。支持基板としては、半導体基板の異種基板を適用する。図1に本形態に係る半導体装置製造用基板の一形態を示す。
本実施の形態では、本発明に係る半導体装置製造用基板を用いて半導体装置を製造する一例を、図11、図12を用いて説明する。
本実施の形態では、本発明に係る半導体装置製造用基板を用いて半導体装置を製造する一例を、図7乃至図10を用いて説明する。ここでは、エレクトロルミネセンス(EL)表示装置を製造する一例を示す。
参照)。
本実施の形態では、本発明に係る半導体装置製造用基板を適用した半導体装置の例を示す。
102 半導体基板
103 第1の熱酸化膜
104 第1のシリコンと酸素とを組成に含む絶縁膜
105 第2のシリコンと酸素とを組成に含む絶縁膜
106 シリコンと窒素とを組成に含む絶縁膜
107 第3のシリコンと酸素とを組成に含む絶縁膜
108 イオン
112 分離層
113 ハロゲンイオン
114 接合層
120 支持基板
122 バリア膜
124 接合層
140 半導体膜
153 第2の熱酸化膜
155 第3の熱酸化膜
Claims (6)
- 単結晶半導体基板上に、シリコンと酸素とを有する第1の絶縁膜を形成し、
前記第1の絶縁膜上に、シリコンと窒素とを有する第2の絶縁膜を形成し、
前記単結晶半導体基板の所定の深さの領域に分離層を形成し、
前記第2の絶縁膜にハロゲンのイオンを照射して、前記第1の絶縁膜に前記ハロゲンを含ませ、
前記第2の絶縁膜上に、第3の絶縁膜を形成し、
前記第1の絶縁膜、前記第2の絶縁膜、及び前記第3の絶縁膜を挟んで、前記単結晶半導体基板と支持基板とを重ね合わせ、
加熱処理を行い、前記分離層を境として前記単結晶半導体基板の一部を分離させることで、前記支持基板上に前記単結晶半導体基板の一部を単結晶半導体膜として設けることを特徴とする半導体装置製造用基板の作製方法。 - 請求項1において、
前記ハロゲンとして、フッ素又は塩素を用いることを特徴とする半導体装置製造用基板の作製方法。 - 請求項1又は2のいずれか一において、
前記第1の絶縁膜として、酸化シリコン膜又は酸化窒化シリコン膜を形成することを特徴とする半導体装置製造用基板の作製方法。 - 請求項1乃至3のいずれか一において、
前記第2の絶縁膜として、窒化シリコン膜又は窒化酸化シリコン膜を形成することを特徴とする半導体装置製造用基板の作製方法。 - 請求項1乃至4のいずれか一において、
前記第3の絶縁膜として、酸化シリコン膜又はシロキサン結合を有する膜を形成することを特徴とする半導体装置製造用基板の作製方法。 - 請求項1乃至5のいずれか一において、
前記支持基板として、ガラス基板、石英基板、セラミック基板、サファイヤ基板、又は表面が絶縁膜で被覆された金属基板を用いることを特徴とする半導体装置製造用基板の作製方法。
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US8912624B2 (en) | 2014-12-16 |
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