JP5371144B2 - 半導体装置及び半導体装置の作製方法、並びに電子機器 - Google Patents

半導体装置及び半導体装置の作製方法、並びに電子機器 Download PDF

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JP5371144B2
JP5371144B2 JP2008165928A JP2008165928A JP5371144B2 JP 5371144 B2 JP5371144 B2 JP 5371144B2 JP 2008165928 A JP2008165928 A JP 2008165928A JP 2008165928 A JP2008165928 A JP 2008165928A JP 5371144 B2 JP5371144 B2 JP 5371144B2
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convex portion
film
resist
substrate
semiconductor film
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JP2008165928A
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Japanese (ja)
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JP2009033134A (ja
JP2009033134A5 (enExample
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雅晴 永井
隆文 溝口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions

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  • Thin Film Transistor (AREA)
JP2008165928A 2007-06-29 2008-06-25 半導体装置及び半導体装置の作製方法、並びに電子機器 Expired - Fee Related JP5371144B2 (ja)

Priority Applications (1)

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JP2008165928A JP5371144B2 (ja) 2007-06-29 2008-06-25 半導体装置及び半導体装置の作製方法、並びに電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007172646 2007-06-29
JP2007172646 2007-06-29
JP2008165928A JP5371144B2 (ja) 2007-06-29 2008-06-25 半導体装置及び半導体装置の作製方法、並びに電子機器

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JP2009033134A JP2009033134A (ja) 2009-02-12
JP2009033134A5 JP2009033134A5 (enExample) 2011-07-28
JP5371144B2 true JP5371144B2 (ja) 2013-12-18

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US (2) US8034674B2 (enExample)
JP (1) JP5371144B2 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5739257B2 (ja) * 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5626726B2 (ja) * 2010-09-30 2014-11-19 株式会社ジャパンディスプレイ 薄膜トランジスタ、表示装置、及び液晶表示装置
US8809854B2 (en) 2011-04-22 2014-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8916868B2 (en) 2011-04-22 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8878288B2 (en) 2011-04-22 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8932913B2 (en) 2011-04-22 2015-01-13 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9006803B2 (en) 2011-04-22 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing thereof
US8847233B2 (en) 2011-05-12 2014-09-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
US9105749B2 (en) 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI567985B (zh) * 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102103913B1 (ko) * 2012-01-10 2020-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN103915483B (zh) * 2012-12-28 2019-06-14 瑞萨电子株式会社 具有被改造以减少漏电流的沟道芯部的场效应晶体管及制作方法
US10400897B2 (en) * 2013-04-22 2019-09-03 Dezurik, Inc. Orbital seat in a butterfly valve
JP6920785B2 (ja) * 2015-08-19 2021-08-18 株式会社ジャパンディスプレイ 表示装置
CN106128963B (zh) * 2016-09-23 2019-07-23 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板
CN113745344B (zh) * 2021-08-25 2024-01-02 深圳市华星光电半导体显示技术有限公司 薄膜晶体管阵列基板及其制作方法

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117782A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd Ｍｏｓ型電界効果トランジスタ及びその製造方法
JPS63237577A (ja) * 1987-03-26 1988-10-04 Nec Corp Ｍｉｓｆｅｔ製造方法
JPS63299278A (ja) * 1987-05-29 1988-12-06 Agency Of Ind Science & Technol 薄膜半導体装置の製造方法
JPH05110099A (ja) 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH05198594A (ja) 1992-01-21 1993-08-06 Fujitsu Ltd 半導体装置及びその製造方法
JPH06188266A (ja) * 1992-12-21 1994-07-08 Mitsubishi Electric Corp 半導体装置の製造方法
US5498904A (en) 1994-02-22 1996-03-12 Sanyo Electric Co., Ltd. Polycrystalline semiconductive film, semiconductor device using the same and method of manufacturing the same
JP3229750B2 (ja) 1994-02-22 2001-11-19 三洋電機株式会社 多結晶半導体膜、それを用いた半導体装置及び太陽電池
JPH09283761A (ja) * 1996-04-12 1997-10-31 Sony Corp 半導体装置及びその製造方法
JP3942699B2 (ja) * 1997-08-29 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100290899B1 (ko) * 1998-02-06 2001-06-01 김영환 반도체소자및이의제조방법
JP2000299465A (ja) * 1999-04-15 2000-10-24 Sony Corp 薄膜トランジスタ及びその製造方法と表示装置
JP2001007342A (ja) * 1999-04-20 2001-01-12 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4776773B2 (ja) 1999-12-10 2011-09-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN1217417C (zh) 1999-12-10 2005-08-31 株式会社半导体能源研究所 半导体器件及其制造方法
US7189997B2 (en) 2001-03-27 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2002359376A (ja) 2001-03-27 2002-12-13 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6982194B2 (en) 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2003204067A (ja) 2001-12-28 2003-07-18 Semiconductor Energy Lab Co Ltd 表示装置およびそれを用いた電子機器
JP4011344B2 (ja) 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6933527B2 (en) 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US7749818B2 (en) 2002-01-28 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4137460B2 (ja) 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6884668B2 (en) 2002-02-22 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
CN100350617C (zh) 2002-03-05 2007-11-21 株式会社半导体能源研究所 半导体元件和使用半导体元件的半导体装置
US6847050B2 (en) 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6812491B2 (en) 2002-03-22 2004-11-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory cell and semiconductor memory device
TWI303882B (en) 2002-03-26 2008-12-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US6841434B2 (en) 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
US6906343B2 (en) 2002-03-26 2005-06-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
JP4723787B2 (ja) * 2002-07-09 2011-07-13 シャープ株式会社 電界効果型トランジスタ、その製造方法及び画像表示装置
JP4522660B2 (ja) 2003-03-14 2010-08-11 シャープ株式会社 薄膜トランジスタ基板の製造方法
US6756643B1 (en) * 2003-06-12 2004-06-29 Advanced Micro Devices, Inc. Dual silicon layer for chemical mechanical polishing planarization
JP4628004B2 (ja) * 2004-03-26 2011-02-09 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP2006278358A (ja) * 2005-03-28 2006-10-12 Seiko Epson Corp トランジスタ、その製造方法、及び電気光学装置用基板
TWI316759B (en) * 2006-01-09 2009-11-01 Univ Nat Chiao Tung Mothod for fabricatng a straggered source/drain and thin-channel tft

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US8034674B2 (en) 2011-10-11
US20110315990A1 (en) 2011-12-29
JP2009033134A (ja) 2009-02-12
US20090001467A1 (en) 2009-01-01
US8426945B2 (en) 2013-04-23

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