JP5354900B2 - 半導体基板の作製方法 - Google Patents

半導体基板の作製方法 Download PDF

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Publication number
JP5354900B2
JP5354900B2 JP2007339764A JP2007339764A JP5354900B2 JP 5354900 B2 JP5354900 B2 JP 5354900B2 JP 2007339764 A JP2007339764 A JP 2007339764A JP 2007339764 A JP2007339764 A JP 2007339764A JP 5354900 B2 JP5354900 B2 JP 5354900B2
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substrate
single crystal
crystal semiconductor
insulating film
semiconductor substrate
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JP2007339764A
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Japanese (ja)
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JP2009164197A (ja
JP2009164197A5 (enExample
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舜平 山崎
健吾 秋元
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
JP2007339764A 2007-12-28 2007-12-28 半導体基板の作製方法 Expired - Fee Related JP5354900B2 (ja)

Priority Applications (1)

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JP2007339764A JP5354900B2 (ja) 2007-12-28 2007-12-28 半導体基板の作製方法

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JP2007339764A JP5354900B2 (ja) 2007-12-28 2007-12-28 半導体基板の作製方法

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JP2009164197A JP2009164197A (ja) 2009-07-23
JP2009164197A5 JP2009164197A5 (enExample) 2011-02-03
JP5354900B2 true JP5354900B2 (ja) 2013-11-27

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JP2007339764A Expired - Fee Related JP5354900B2 (ja) 2007-12-28 2007-12-28 半導体基板の作製方法

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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5487741B2 (ja) * 2009-06-10 2014-05-07 株式会社ニコン 基板貼り合わせ装置
JP2011129777A (ja) * 2009-12-18 2011-06-30 Nikon Corp 基板重ね合わせ装置及びデバイスの製造方法
JP5445160B2 (ja) * 2010-01-18 2014-03-19 株式会社ニコン ウェハ処理装置、ウェハ処理方法およびデバイスの製造方法
JP5421825B2 (ja) 2010-03-09 2014-02-19 東京エレクトロン株式会社 接合システム、接合方法、プログラム及びコンピュータ記憶媒体
JP5447110B2 (ja) * 2010-04-06 2014-03-19 株式会社ニコン 基板貼り合わせ装置、積層半導体の製造方法、積層半導体及び基板貼り合わせ方法
FR2963848B1 (fr) * 2010-08-11 2012-08-31 Soitec Silicon On Insulator Procede de collage par adhesion moleculaire a basse pression
JP5538282B2 (ja) * 2010-08-23 2014-07-02 東京エレクトロン株式会社 接合装置、接合方法、プログラム及びコンピュータ記憶媒体
JP5129848B2 (ja) * 2010-10-18 2013-01-30 東京エレクトロン株式会社 接合装置及び接合方法
JP5314057B2 (ja) * 2011-01-07 2013-10-16 東京エレクトロン株式会社 剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体
JP6037734B2 (ja) * 2012-09-07 2016-12-07 三菱重工工作機械株式会社 常温接合装置および常温接合方法
KR102162798B1 (ko) 2014-08-12 2020-10-08 삼성디스플레이 주식회사 증착장치 및 이를 이용한 유기발광 디스플레이 장치 제조방법
JP2023057752A (ja) * 2021-10-12 2023-04-24 ランテクニカルサービス株式会社 薄型基板の接合、剥離方法、薄型基板の製造方法、薄型基板、剥離装置、及び、接合装置
JP2023071504A (ja) * 2021-11-11 2023-05-23 東京エレクトロン株式会社 基板処理方法
JP7747416B2 (ja) * 2021-11-11 2025-10-01 東京エレクトロン株式会社 基板処理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3250722B2 (ja) * 1995-12-12 2002-01-28 キヤノン株式会社 Ｓｏｉ基板の製造方法および製造装置
JPH09162088A (ja) * 1995-12-13 1997-06-20 Asahi Chem Ind Co Ltd 半導体基板とその製造方法
JPH10150176A (ja) * 1996-11-15 1998-06-02 Tadahiro Omi 半導体基体とその作製方法
JP2004266071A (ja) * 2003-02-28 2004-09-24 Canon Inc 貼り合わせシステム
JP2006028562A (ja) * 2004-07-14 2006-02-02 Shimadzu Corp 成膜装置および逆スパッタリング方法
FR2888663B1 (fr) * 2005-07-13 2008-04-18 Soitec Silicon On Insulator Procede de diminution de la rugosite d'une couche epaisse d'isolant

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JP2009164197A (ja) 2009-07-23

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