JP5301290B2 - 集積回路チップにおける回路ブロック間のノイズ分離 - Google Patents

集積回路チップにおける回路ブロック間のノイズ分離 Download PDF

Info

Publication number
JP5301290B2
JP5301290B2 JP2008556488A JP2008556488A JP5301290B2 JP 5301290 B2 JP5301290 B2 JP 5301290B2 JP 2008556488 A JP2008556488 A JP 2008556488A JP 2008556488 A JP2008556488 A JP 2008556488A JP 5301290 B2 JP5301290 B2 JP 5301290B2
Authority
JP
Japan
Prior art keywords
region
block
circuit block
circuit
guard
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008556488A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009527927A (ja
JP2009527927A5 (https=
Inventor
エム． シケアヌ、ラドゥ
ケイ． バナジー、スマン
エル． ハーティン、オリン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2009527927A publication Critical patent/JP2009527927A/ja
Publication of JP2009527927A5 publication Critical patent/JP2009527927A5/ja
Application granted granted Critical
Publication of JP5301290B2 publication Critical patent/JP5301290B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008556488A 2006-02-23 2007-01-18 集積回路チップにおける回路ブロック間のノイズ分離 Active JP5301290B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/360,285 US7608913B2 (en) 2006-02-23 2006-02-23 Noise isolation between circuit blocks in an integrated circuit chip
US11/360,285 2006-02-23
PCT/US2007/060655 WO2007098303A2 (en) 2006-02-23 2007-01-18 Noise isolation between circuit blocks in an integrated circuit chip

Publications (3)

Publication Number Publication Date
JP2009527927A JP2009527927A (ja) 2009-07-30
JP2009527927A5 JP2009527927A5 (https=) 2010-02-12
JP5301290B2 true JP5301290B2 (ja) 2013-09-25

Family

ID=38427330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556488A Active JP5301290B2 (ja) 2006-02-23 2007-01-18 集積回路チップにおける回路ブロック間のノイズ分離

Country Status (7)

Country Link
US (3) US7608913B2 (https=)
EP (1) EP1989738B1 (https=)
JP (1) JP5301290B2 (https=)
KR (1) KR101342877B1 (https=)
CN (1) CN101432881B (https=)
TW (1) TWI427762B (https=)
WO (1) WO2007098303A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881679B1 (en) * 2007-03-14 2011-02-01 Rf Micro Devices, Inc. Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver
US9202760B2 (en) * 2012-06-26 2015-12-01 Infineon Technologies Ag Semiconductor devices and structures
US8957496B2 (en) 2013-04-17 2015-02-17 Freescale Semiconductor, Inc. Integrated circuit chip with discontinuous guard ring
KR102442933B1 (ko) * 2017-08-21 2022-09-15 삼성전자주식회사 3차원 반도체 장치
JP7091130B2 (ja) * 2018-05-08 2022-06-27 キオクシア株式会社 半導体記憶装置
US10615252B2 (en) 2018-08-06 2020-04-07 Nxp Usa, Inc. Device isolation
JP2022516495A (ja) * 2018-12-29 2022-02-28 華為技術有限公司 信号分離装置及び信号分離方法
US20240388309A1 (en) * 2022-10-26 2024-11-21 Radu Mircea Secareanu Binary Data Compression / Decompression Method

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772376A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Protective circuit device for semiconductor
JPS61214550A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体装置
US4853759A (en) * 1986-09-29 1989-08-01 American Microsystems, Inc. Integrated circuit filter with reduced die area
JP3036752B2 (ja) * 1988-12-21 2000-04-24 九州日本電気株式会社 半導体装置
US5196920A (en) 1992-04-21 1993-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device for limiting capacitive coupling between adjacent circuit blocks
JP3251735B2 (ja) * 1992-09-25 2002-01-28 株式会社東芝 半導体集積回路装置
US5475255A (en) * 1994-06-30 1995-12-12 Motorola Inc. Circuit die having improved substrate noise isolation
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
JP3077592B2 (ja) * 1996-06-27 2000-08-14 日本電気株式会社 デジタル回路とアナログ回路が混在する半導体集積回路装置およびその製造方法
GB2341272B (en) * 1998-09-03 2003-08-20 Ericsson Telefon Ab L M High voltage shield
US6424022B1 (en) * 2000-03-12 2002-07-23 Mobilink Telecom, Inc. Guard mesh for noise isolation in highly integrated circuits
US6479869B1 (en) * 1999-10-01 2002-11-12 Rohm Co., Ltd. Semiconductor device with enhanced protection from electrostatic breakdown
JP4424830B2 (ja) * 2000-06-30 2010-03-03 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP3834212B2 (ja) * 2001-05-22 2006-10-18 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
WO2003005449A1 (en) 2001-07-03 2003-01-16 Tripath Technology, Inc. Substrate connection in an integrated power circuit
US6700771B2 (en) 2001-08-30 2004-03-02 Micron Technology, Inc. Decoupling capacitor for high frequency noise immunity
US6563181B1 (en) * 2001-11-02 2003-05-13 Motorola, Inc. High frequency signal isolation in a semiconductor device
US6747294B1 (en) * 2002-09-25 2004-06-08 Polarfab Llc Guard ring structure for reducing crosstalk and latch-up in integrated circuits
US6744112B2 (en) 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
US7052939B2 (en) 2002-11-26 2006-05-30 Freescale Semiconductor, Inc. Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
US6787409B2 (en) 2002-11-26 2004-09-07 Mosel Vitelic, Inc. Method of forming trench isolation without grooving
US6900969B2 (en) * 2002-12-11 2005-05-31 Texas Instruments Incorporated ESD protection with uniform substrate bias
JP3784382B2 (ja) * 2003-07-17 2006-06-07 株式会社半導体理工学研究センター 半導体集積回路
US7851860B2 (en) * 2004-03-26 2010-12-14 Honeywell International Inc. Techniques to reduce substrate cross talk on mixed signal and RF circuit design
US7541652B1 (en) * 2004-05-05 2009-06-02 Xilinx, Inc. Substrate coupled noise isolation for integrated circuits
US7492018B2 (en) * 2004-09-17 2009-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Isolating substrate noise by forming semi-insulating regions
US7071530B1 (en) * 2005-01-27 2006-07-04 International Business Machines Corporation Multiple layer structure for substrate noise isolation

Also Published As

Publication number Publication date
TW200802795A (en) 2008-01-01
EP1989738A2 (en) 2008-11-12
EP1989738A4 (en) 2012-07-25
EP1989738B1 (en) 2015-03-11
US20090302440A1 (en) 2009-12-10
US20070194394A1 (en) 2007-08-23
KR20080109731A (ko) 2008-12-17
US20130207229A1 (en) 2013-08-15
KR101342877B1 (ko) 2013-12-19
WO2007098303A2 (en) 2007-08-30
CN101432881A (zh) 2009-05-13
JP2009527927A (ja) 2009-07-30
US7608913B2 (en) 2009-10-27
TWI427762B (zh) 2014-02-21
CN101432881B (zh) 2010-12-08
US9048110B2 (en) 2015-06-02
WO2007098303A3 (en) 2009-01-29

Similar Documents

Publication Publication Date Title
JP5301290B2 (ja) 集積回路チップにおける回路ブロック間のノイズ分離
JP5519140B2 (ja) 半導体装置及びその製造方法
JP4854934B2 (ja) 静電気放電保護素子
CN100477220C (zh) 半导体结构
CN1610966A (zh) 半导体器件中的高频信号隔离
KR20100090637A (ko) 정전방전 보호 방치 및 방법
KR100734507B1 (ko) 고전압 소자의 전류 누설을 방지하기 위한 구조
JP5297495B2 (ja) 静電気放電保護素子
CN110581126A (zh) 含静电放电保护电路的半导体集成电路器件及其制造方法
JP2009135493A (ja) 静電気放電保護素子及びその製造方法
US20110312146A1 (en) Bipolar device having buried contacts
JP4744103B2 (ja) 抵抗素子を含む半導体装置及びその製造方法
US7598575B1 (en) Semiconductor die with reduced RF attenuation
JP4824385B2 (ja) 半導体装置
US7468546B2 (en) Semiconductor device with a noise prevention structure
KR102535002B1 (ko) Cmos 공정 기반의 홀 센서를 포함하는 반도체 소자 및 그 제조 방법
JP5163212B2 (ja) 半導体装置及びその製造方法
JP2005079557A (ja) 半導体装置及びその製造方法
JP6236837B2 (ja) 半導体装置
KR20010091035A (ko) 반도체 장치와 그의 제조 방법
JP2006286696A (ja) 半導体装置及びその製造方法
JP2009224573A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20091218

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091218

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120727

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120807

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130312

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130425

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130528

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130619

R150 Certificate of patent or registration of utility model

Ref document number: 5301290

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250