JP2009527927A5 - - Google Patents

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Publication number
JP2009527927A5
JP2009527927A5 JP2008556488A JP2008556488A JP2009527927A5 JP 2009527927 A5 JP2009527927 A5 JP 2009527927A5 JP 2008556488 A JP2008556488 A JP 2008556488A JP 2008556488 A JP2008556488 A JP 2008556488A JP 2009527927 A5 JP2009527927 A5 JP 2009527927A5
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JP
Japan
Prior art keywords
region
circuit block
block
circuit
doping concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008556488A
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English (en)
Japanese (ja)
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JP2009527927A (ja
JP5301290B2 (ja
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Publication date
Priority claimed from US11/360,285 external-priority patent/US7608913B2/en
Application filed filed Critical
Publication of JP2009527927A publication Critical patent/JP2009527927A/ja
Publication of JP2009527927A5 publication Critical patent/JP2009527927A5/ja
Application granted granted Critical
Publication of JP5301290B2 publication Critical patent/JP5301290B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008556488A 2006-02-23 2007-01-18 集積回路チップにおける回路ブロック間のノイズ分離 Active JP5301290B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/360,285 US7608913B2 (en) 2006-02-23 2006-02-23 Noise isolation between circuit blocks in an integrated circuit chip
US11/360,285 2006-02-23
PCT/US2007/060655 WO2007098303A2 (en) 2006-02-23 2007-01-18 Noise isolation between circuit blocks in an integrated circuit chip

Publications (3)

Publication Number Publication Date
JP2009527927A JP2009527927A (ja) 2009-07-30
JP2009527927A5 true JP2009527927A5 (https=) 2010-02-12
JP5301290B2 JP5301290B2 (ja) 2013-09-25

Family

ID=38427330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008556488A Active JP5301290B2 (ja) 2006-02-23 2007-01-18 集積回路チップにおける回路ブロック間のノイズ分離

Country Status (7)

Country Link
US (3) US7608913B2 (https=)
EP (1) EP1989738B1 (https=)
JP (1) JP5301290B2 (https=)
KR (1) KR101342877B1 (https=)
CN (1) CN101432881B (https=)
TW (1) TWI427762B (https=)
WO (1) WO2007098303A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881679B1 (en) * 2007-03-14 2011-02-01 Rf Micro Devices, Inc. Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver
US9202760B2 (en) * 2012-06-26 2015-12-01 Infineon Technologies Ag Semiconductor devices and structures
US8957496B2 (en) 2013-04-17 2015-02-17 Freescale Semiconductor, Inc. Integrated circuit chip with discontinuous guard ring
KR102442933B1 (ko) * 2017-08-21 2022-09-15 삼성전자주식회사 3차원 반도체 장치
JP7091130B2 (ja) * 2018-05-08 2022-06-27 キオクシア株式会社 半導体記憶装置
US10615252B2 (en) 2018-08-06 2020-04-07 Nxp Usa, Inc. Device isolation
JP2022516495A (ja) * 2018-12-29 2022-02-28 華為技術有限公司 信号分離装置及び信号分離方法
US20240388309A1 (en) * 2022-10-26 2024-11-21 Radu Mircea Secareanu Binary Data Compression / Decompression Method

Family Cites Families (27)

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Publication number Priority date Publication date Assignee Title
JPS5772376A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Protective circuit device for semiconductor
JPS61214550A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体装置
US4853759A (en) * 1986-09-29 1989-08-01 American Microsystems, Inc. Integrated circuit filter with reduced die area
JP3036752B2 (ja) * 1988-12-21 2000-04-24 九州日本電気株式会社 半導体装置
US5196920A (en) 1992-04-21 1993-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device for limiting capacitive coupling between adjacent circuit blocks
JP3251735B2 (ja) * 1992-09-25 2002-01-28 株式会社東芝 半導体集積回路装置
US5475255A (en) * 1994-06-30 1995-12-12 Motorola Inc. Circuit die having improved substrate noise isolation
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
JP3077592B2 (ja) * 1996-06-27 2000-08-14 日本電気株式会社 デジタル回路とアナログ回路が混在する半導体集積回路装置およびその製造方法
GB2341272B (en) * 1998-09-03 2003-08-20 Ericsson Telefon Ab L M High voltage shield
US6424022B1 (en) * 2000-03-12 2002-07-23 Mobilink Telecom, Inc. Guard mesh for noise isolation in highly integrated circuits
US6479869B1 (en) * 1999-10-01 2002-11-12 Rohm Co., Ltd. Semiconductor device with enhanced protection from electrostatic breakdown
JP4424830B2 (ja) * 2000-06-30 2010-03-03 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP3834212B2 (ja) * 2001-05-22 2006-10-18 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
WO2003005449A1 (en) 2001-07-03 2003-01-16 Tripath Technology, Inc. Substrate connection in an integrated power circuit
US6700771B2 (en) 2001-08-30 2004-03-02 Micron Technology, Inc. Decoupling capacitor for high frequency noise immunity
US6563181B1 (en) * 2001-11-02 2003-05-13 Motorola, Inc. High frequency signal isolation in a semiconductor device
US6747294B1 (en) * 2002-09-25 2004-06-08 Polarfab Llc Guard ring structure for reducing crosstalk and latch-up in integrated circuits
US6744112B2 (en) 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
US7052939B2 (en) 2002-11-26 2006-05-30 Freescale Semiconductor, Inc. Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
US6787409B2 (en) 2002-11-26 2004-09-07 Mosel Vitelic, Inc. Method of forming trench isolation without grooving
US6900969B2 (en) * 2002-12-11 2005-05-31 Texas Instruments Incorporated ESD protection with uniform substrate bias
JP3784382B2 (ja) * 2003-07-17 2006-06-07 株式会社半導体理工学研究センター 半導体集積回路
US7851860B2 (en) * 2004-03-26 2010-12-14 Honeywell International Inc. Techniques to reduce substrate cross talk on mixed signal and RF circuit design
US7541652B1 (en) * 2004-05-05 2009-06-02 Xilinx, Inc. Substrate coupled noise isolation for integrated circuits
US7492018B2 (en) * 2004-09-17 2009-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Isolating substrate noise by forming semi-insulating regions
US7071530B1 (en) * 2005-01-27 2006-07-04 International Business Machines Corporation Multiple layer structure for substrate noise isolation

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