JP2009536789A5 - - Google Patents

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Publication number
JP2009536789A5
JP2009536789A5 JP2009509836A JP2009509836A JP2009536789A5 JP 2009536789 A5 JP2009536789 A5 JP 2009536789A5 JP 2009509836 A JP2009509836 A JP 2009509836A JP 2009509836 A JP2009509836 A JP 2009509836A JP 2009536789 A5 JP2009536789 A5 JP 2009536789A5
Authority
JP
Japan
Prior art keywords
integrated circuit
region
gate
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009509836A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009536789A (ja
JP5137947B2 (ja
Filing date
Publication date
Priority claimed from US11/524,113 external-priority patent/US7851872B2/en
Application filed filed Critical
Priority claimed from PCT/US2007/011207 external-priority patent/WO2007136556A2/en
Publication of JP2009536789A publication Critical patent/JP2009536789A/ja
Publication of JP2009536789A5 publication Critical patent/JP2009536789A5/ja
Application granted granted Critical
Publication of JP5137947B2 publication Critical patent/JP5137947B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009509836A 2006-05-08 2007-05-08 効率的なトランジスタ構造 Expired - Fee Related JP5137947B2 (ja)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
US79856806P 2006-05-08 2006-05-08
US60/798,568 2006-05-08
US82100806P 2006-08-01 2006-08-01
US60/821,008 2006-08-01
US82333206P 2006-08-23 2006-08-23
US60/823,332 2006-08-23
US82435706P 2006-09-01 2006-09-01
US60/824,357 2006-09-01
US82551706P 2006-09-13 2006-09-13
US60/825,517 2006-09-13
US11/524,113 2006-09-20
US11/524,113 US7851872B2 (en) 2003-10-22 2006-09-20 Efficient transistor structure
US11/586,467 US7528444B2 (en) 2003-10-22 2006-10-25 Efficient transistor structure
US11/586,470 2006-10-25
US11/586,471 US7652338B2 (en) 2003-10-22 2006-10-25 Efficient transistor structure
US11/586,471 2006-10-25
US11/586,467 2006-10-25
US11/586,470 US7863657B2 (en) 2003-10-22 2006-10-25 Efficient transistor structure
PCT/US2007/011207 WO2007136556A2 (en) 2006-05-08 2007-05-08 Efficient transistor structure

Publications (3)

Publication Number Publication Date
JP2009536789A JP2009536789A (ja) 2009-10-15
JP2009536789A5 true JP2009536789A5 (https=) 2010-06-17
JP5137947B2 JP5137947B2 (ja) 2013-02-06

Family

ID=38723776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009509836A Expired - Fee Related JP5137947B2 (ja) 2006-05-08 2007-05-08 効率的なトランジスタ構造

Country Status (6)

Country Link
EP (1) EP2030237B1 (https=)
JP (1) JP5137947B2 (https=)
KR (1) KR101373792B1 (https=)
CN (1) CN101490843B (https=)
TW (4) TWI429078B (https=)
WO (1) WO2007136556A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100334B1 (en) * 2006-12-28 2016-04-13 Marvell World Trade Ltd. Geometry of mos device with low on-resistance
CN102623496B (zh) * 2011-01-27 2014-11-05 无锡华润上华半导体有限公司 矩阵型mos场效应晶体管
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
US11195794B2 (en) * 2020-02-05 2021-12-07 Samsung Electronics Co., Ltd. Stacked integrated circuit devices including a routing wire
CN111599862A (zh) * 2020-05-21 2020-08-28 Oppo广东移动通信有限公司 晶体管以及集成电路
WO2022009731A1 (ja) * 2020-07-10 2022-01-13 ソニーグループ株式会社 駆動回路アレイ基板、表示装置および電子機器

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409499A (en) * 1982-06-14 1983-10-11 Standard Microsystems Corporation High-speed merged plane logic function array
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
JPH01207976A (ja) * 1988-02-15 1989-08-21 Nec Corp 半導体装置
EP0466463A1 (en) * 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
JPH07161984A (ja) * 1993-12-06 1995-06-23 Mitsubishi Electric Corp 半導体集積回路装置
JPH07283377A (ja) * 1994-01-03 1995-10-27 Texas Instr Inc <Ti> 小型ゲートアレイおよびその製造方法
JP2611687B2 (ja) * 1995-06-26 1997-05-21 セイコーエプソン株式会社 半導体装置
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
US6236258B1 (en) * 1998-08-25 2001-05-22 International Business Machines Corporation Wordline driver circuit using ring-shaped devices
JP2000208759A (ja) * 1999-01-12 2000-07-28 Rohm Co Ltd 半導体装置
DE19958906A1 (de) * 1999-12-07 2001-07-05 Infineon Technologies Ag Herstellung von integrierten Schaltungen
JP2001339047A (ja) * 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置
TW447129B (en) * 2000-06-30 2001-07-21 United Microelectronics Corp Array type SOI transistor layout
JP4124981B2 (ja) * 2001-06-04 2008-07-23 株式会社ルネサステクノロジ 電力用半導体装置および電源回路
US6566710B1 (en) * 2001-08-29 2003-05-20 National Semiconductor Corporation Power MOSFET cell with a crossed bar shaped body contact area
US6724044B2 (en) * 2002-05-10 2004-04-20 General Semiconductor, Inc. MOSFET device having geometry that permits frequent body contact
JP5179692B2 (ja) * 2002-08-30 2013-04-10 富士通セミコンダクター株式会社 半導体記憶装置及びその製造方法
EP1420450A3 (en) * 2002-11-15 2006-12-13 Matsushita Electric Industrial Co., Ltd. Semiconductor differential circuit with transistors having a virtual ground
KR100485174B1 (ko) 2002-12-24 2005-04-22 동부아남반도체 주식회사 모스 트랜지스터 제조 방법
JP3708082B2 (ja) * 2003-02-27 2005-10-19 株式会社ルネサステクノロジ 電力半導体装置
US7091565B2 (en) * 2003-10-22 2006-08-15 Marvell World Trade Ltd. Efficient transistor structure
TWI241720B (en) * 2004-01-16 2005-10-11 Super Nova Optoelectronics Cor Replaceable light emitting diode packaging structure
JP2005311131A (ja) * 2004-04-22 2005-11-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2007258314A (ja) * 2006-03-22 2007-10-04 Seiko Npc Corp 半導体装置の製造方法及び半導体装置

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