TWI429078B - 有效率電晶體結構 - Google Patents

有效率電晶體結構 Download PDF

Info

Publication number
TWI429078B
TWI429078B TW096116398A TW96116398A TWI429078B TW I429078 B TWI429078 B TW I429078B TW 096116398 A TW096116398 A TW 096116398A TW 96116398 A TW96116398 A TW 96116398A TW I429078 B TWI429078 B TW I429078B
Authority
TW
Taiwan
Prior art keywords
region
source
drain
gate
regions
Prior art date
Application number
TW096116398A
Other languages
English (en)
Chinese (zh)
Other versions
TW200802870A (en
Inventor
Sutardja Sehat
Original Assignee
Marvell World Trade Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/524,113 external-priority patent/US7851872B2/en
Application filed by Marvell World Trade Ltd filed Critical Marvell World Trade Ltd
Publication of TW200802870A publication Critical patent/TW200802870A/zh
Application granted granted Critical
Publication of TWI429078B publication Critical patent/TWI429078B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
TW096116398A 2006-05-08 2007-05-08 有效率電晶體結構 TWI429078B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US79856806P 2006-05-08 2006-05-08
US82100806P 2006-08-01 2006-08-01
US82333206P 2006-08-23 2006-08-23
US82435706P 2006-09-01 2006-09-01
US82551706P 2006-09-13 2006-09-13
US11/524,113 US7851872B2 (en) 2003-10-22 2006-09-20 Efficient transistor structure

Publications (2)

Publication Number Publication Date
TW200802870A TW200802870A (en) 2008-01-01
TWI429078B true TWI429078B (zh) 2014-03-01

Family

ID=38723776

Family Applications (4)

Application Number Title Priority Date Filing Date
TW096116398A TWI429078B (zh) 2006-05-08 2007-05-08 有效率電晶體結構
TW096116401A TW200805663A (en) 2006-05-08 2007-05-08 Efficient transistor structure
TW096116397A TWI407566B (zh) 2006-05-08 2007-05-08 有效率電晶體結構
TW096116400A TWI420665B (zh) 2006-05-08 2007-05-08 有效率電晶體結構

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW096116401A TW200805663A (en) 2006-05-08 2007-05-08 Efficient transistor structure
TW096116397A TWI407566B (zh) 2006-05-08 2007-05-08 有效率電晶體結構
TW096116400A TWI420665B (zh) 2006-05-08 2007-05-08 有效率電晶體結構

Country Status (6)

Country Link
EP (1) EP2030237B1 (https=)
JP (1) JP5137947B2 (https=)
KR (1) KR101373792B1 (https=)
CN (1) CN101490843B (https=)
TW (4) TWI429078B (https=)
WO (1) WO2007136556A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100334B1 (en) * 2006-12-28 2016-04-13 Marvell World Trade Ltd. Geometry of mos device with low on-resistance
CN102623496B (zh) * 2011-01-27 2014-11-05 无锡华润上华半导体有限公司 矩阵型mos场效应晶体管
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
US11195794B2 (en) * 2020-02-05 2021-12-07 Samsung Electronics Co., Ltd. Stacked integrated circuit devices including a routing wire
CN111599862A (zh) * 2020-05-21 2020-08-28 Oppo广东移动通信有限公司 晶体管以及集成电路
WO2022009731A1 (ja) * 2020-07-10 2022-01-13 ソニーグループ株式会社 駆動回路アレイ基板、表示装置および電子機器

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409499A (en) * 1982-06-14 1983-10-11 Standard Microsystems Corporation High-speed merged plane logic function array
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
JPH01207976A (ja) * 1988-02-15 1989-08-21 Nec Corp 半導体装置
EP0466463A1 (en) * 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
JPH07161984A (ja) * 1993-12-06 1995-06-23 Mitsubishi Electric Corp 半導体集積回路装置
JPH07283377A (ja) * 1994-01-03 1995-10-27 Texas Instr Inc <Ti> 小型ゲートアレイおよびその製造方法
JP2611687B2 (ja) * 1995-06-26 1997-05-21 セイコーエプソン株式会社 半導体装置
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
US6236258B1 (en) * 1998-08-25 2001-05-22 International Business Machines Corporation Wordline driver circuit using ring-shaped devices
JP2000208759A (ja) * 1999-01-12 2000-07-28 Rohm Co Ltd 半導体装置
DE19958906A1 (de) * 1999-12-07 2001-07-05 Infineon Technologies Ag Herstellung von integrierten Schaltungen
JP2001339047A (ja) * 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置
TW447129B (en) * 2000-06-30 2001-07-21 United Microelectronics Corp Array type SOI transistor layout
JP4124981B2 (ja) * 2001-06-04 2008-07-23 株式会社ルネサステクノロジ 電力用半導体装置および電源回路
US6566710B1 (en) * 2001-08-29 2003-05-20 National Semiconductor Corporation Power MOSFET cell with a crossed bar shaped body contact area
US6724044B2 (en) * 2002-05-10 2004-04-20 General Semiconductor, Inc. MOSFET device having geometry that permits frequent body contact
JP5179692B2 (ja) * 2002-08-30 2013-04-10 富士通セミコンダクター株式会社 半導体記憶装置及びその製造方法
EP1420450A3 (en) * 2002-11-15 2006-12-13 Matsushita Electric Industrial Co., Ltd. Semiconductor differential circuit with transistors having a virtual ground
KR100485174B1 (ko) 2002-12-24 2005-04-22 동부아남반도체 주식회사 모스 트랜지스터 제조 방법
JP3708082B2 (ja) * 2003-02-27 2005-10-19 株式会社ルネサステクノロジ 電力半導体装置
US7091565B2 (en) * 2003-10-22 2006-08-15 Marvell World Trade Ltd. Efficient transistor structure
TWI241720B (en) * 2004-01-16 2005-10-11 Super Nova Optoelectronics Cor Replaceable light emitting diode packaging structure
JP2005311131A (ja) * 2004-04-22 2005-11-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2007258314A (ja) * 2006-03-22 2007-10-04 Seiko Npc Corp 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
CN101490843B (zh) 2011-01-26
TW200802869A (en) 2008-01-01
JP2009536789A (ja) 2009-10-15
TW200805662A (en) 2008-01-16
TW200802870A (en) 2008-01-01
TW200805663A (en) 2008-01-16
JP5137947B2 (ja) 2013-02-06
WO2007136556B1 (en) 2008-08-28
TWI420665B (zh) 2013-12-21
EP2030237A2 (en) 2009-03-04
WO2007136556A2 (en) 2007-11-29
KR101373792B1 (ko) 2014-03-13
EP2030237B1 (en) 2011-02-09
CN101490843A (zh) 2009-07-22
TWI407566B (zh) 2013-09-01
WO2007136556A3 (en) 2008-07-03
KR20090013219A (ko) 2009-02-04

Similar Documents

Publication Publication Date Title
CN102709285B (zh) 具有低导通电阻的mos器件的几何图形
US7851872B2 (en) Efficient transistor structure
US9343302B2 (en) Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
US7961506B2 (en) Multiple memory cells with rectifying device
TWI429078B (zh) 有效率電晶體結構
US9449978B2 (en) Semiconductor devices including a recessed access device and methods of forming same
US20210035968A1 (en) Apparatus with a current-gain layout
WO2014126201A1 (ja) 半導体装置
CN1130772C (zh) 含大量绝缘栅场效应晶体管的高集成电路半导体器件
US10431588B2 (en) Semiconductor device, related manufacturing method, and related electronic device
US20250248100A1 (en) Variable stack nanosheet devices and methods for making the same
US20190296126A1 (en) Systems and methods for dummy gate tie-offs in a self-aligned gate contact (sagc) cell

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees