KR101373792B1 - 효율적인 트랜지스터 구조 - Google Patents

효율적인 트랜지스터 구조 Download PDF

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Publication number
KR101373792B1
KR101373792B1 KR1020087029444A KR20087029444A KR101373792B1 KR 101373792 B1 KR101373792 B1 KR 101373792B1 KR 1020087029444 A KR1020087029444 A KR 1020087029444A KR 20087029444 A KR20087029444 A KR 20087029444A KR 101373792 B1 KR101373792 B1 KR 101373792B1
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South Korea
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KR1020087029444A
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English (en)
Korean (ko)
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KR20090013219A (ko
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세하트 수타르쟈
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마벨 월드 트레이드 리미티드
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Priority claimed from US11/524,113 external-priority patent/US7851872B2/en
Application filed by 마벨 월드 트레이드 리미티드 filed Critical 마벨 월드 트레이드 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
KR1020087029444A 2006-05-08 2007-05-08 효율적인 트랜지스터 구조 Expired - Fee Related KR101373792B1 (ko)

Applications Claiming Priority (19)

Application Number Priority Date Filing Date Title
US79856806P 2006-05-08 2006-05-08
US60/798,568 2006-05-08
US82100806P 2006-08-01 2006-08-01
US60/821,008 2006-08-01
US82333206P 2006-08-23 2006-08-23
US60/823,332 2006-08-23
US82435706P 2006-09-01 2006-09-01
US60/824,357 2006-09-01
US82551706P 2006-09-13 2006-09-13
US60/825,517 2006-09-13
US11/524,113 2006-09-20
US11/524,113 US7851872B2 (en) 2003-10-22 2006-09-20 Efficient transistor structure
US11/586,467 US7528444B2 (en) 2003-10-22 2006-10-25 Efficient transistor structure
US11/586,470 2006-10-25
US11/586,471 US7652338B2 (en) 2003-10-22 2006-10-25 Efficient transistor structure
US11/586,471 2006-10-25
US11/586,467 2006-10-25
US11/586,470 US7863657B2 (en) 2003-10-22 2006-10-25 Efficient transistor structure
PCT/US2007/011207 WO2007136556A2 (en) 2006-05-08 2007-05-08 Efficient transistor structure

Publications (2)

Publication Number Publication Date
KR20090013219A KR20090013219A (ko) 2009-02-04
KR101373792B1 true KR101373792B1 (ko) 2014-03-13

Family

ID=38723776

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087029444A Expired - Fee Related KR101373792B1 (ko) 2006-05-08 2007-05-08 효율적인 트랜지스터 구조

Country Status (6)

Country Link
EP (1) EP2030237B1 (https=)
JP (1) JP5137947B2 (https=)
KR (1) KR101373792B1 (https=)
CN (1) CN101490843B (https=)
TW (4) TWI429078B (https=)
WO (1) WO2007136556A2 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2100334B1 (en) * 2006-12-28 2016-04-13 Marvell World Trade Ltd. Geometry of mos device with low on-resistance
CN102623496B (zh) * 2011-01-27 2014-11-05 无锡华润上华半导体有限公司 矩阵型mos场效应晶体管
JP5586546B2 (ja) * 2011-03-23 2014-09-10 株式会社東芝 半導体装置
US11195794B2 (en) * 2020-02-05 2021-12-07 Samsung Electronics Co., Ltd. Stacked integrated circuit devices including a routing wire
CN111599862A (zh) * 2020-05-21 2020-08-28 Oppo广东移动通信有限公司 晶体管以及集成电路
WO2022009731A1 (ja) * 2020-07-10 2022-01-13 ソニーグループ株式会社 駆動回路アレイ基板、表示装置および電子機器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409499A (en) * 1982-06-14 1983-10-11 Standard Microsystems Corporation High-speed merged plane logic function array
JPH01207976A (ja) * 1988-02-15 1989-08-21 Nec Corp 半導体装置
US20030209759A1 (en) 2002-05-10 2003-11-13 Blanchard Richard A. Mosfet device having geometry that permits frequent body contact
KR100485174B1 (ko) 2002-12-24 2005-04-22 동부아남반도체 주식회사 모스 트랜지스터 제조 방법

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076160A (ja) * 1983-10-03 1985-04-30 Seiko Epson Corp 半導体集積回路
EP0466463A1 (en) * 1990-07-10 1992-01-15 Kawasaki Steel Corporation Basic cell and arrangement structure thereof
JPH07161984A (ja) * 1993-12-06 1995-06-23 Mitsubishi Electric Corp 半導体集積回路装置
JPH07283377A (ja) * 1994-01-03 1995-10-27 Texas Instr Inc <Ti> 小型ゲートアレイおよびその製造方法
JP2611687B2 (ja) * 1995-06-26 1997-05-21 セイコーエプソン株式会社 半導体装置
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
US6236258B1 (en) * 1998-08-25 2001-05-22 International Business Machines Corporation Wordline driver circuit using ring-shaped devices
JP2000208759A (ja) * 1999-01-12 2000-07-28 Rohm Co Ltd 半導体装置
DE19958906A1 (de) * 1999-12-07 2001-07-05 Infineon Technologies Ag Herstellung von integrierten Schaltungen
JP2001339047A (ja) * 2000-05-29 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置
TW447129B (en) * 2000-06-30 2001-07-21 United Microelectronics Corp Array type SOI transistor layout
JP4124981B2 (ja) * 2001-06-04 2008-07-23 株式会社ルネサステクノロジ 電力用半導体装置および電源回路
US6566710B1 (en) * 2001-08-29 2003-05-20 National Semiconductor Corporation Power MOSFET cell with a crossed bar shaped body contact area
JP5179692B2 (ja) * 2002-08-30 2013-04-10 富士通セミコンダクター株式会社 半導体記憶装置及びその製造方法
EP1420450A3 (en) * 2002-11-15 2006-12-13 Matsushita Electric Industrial Co., Ltd. Semiconductor differential circuit with transistors having a virtual ground
JP3708082B2 (ja) * 2003-02-27 2005-10-19 株式会社ルネサステクノロジ 電力半導体装置
US7091565B2 (en) * 2003-10-22 2006-08-15 Marvell World Trade Ltd. Efficient transistor structure
TWI241720B (en) * 2004-01-16 2005-10-11 Super Nova Optoelectronics Cor Replaceable light emitting diode packaging structure
JP2005311131A (ja) * 2004-04-22 2005-11-04 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
JP2007258314A (ja) * 2006-03-22 2007-10-04 Seiko Npc Corp 半導体装置の製造方法及び半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4409499A (en) * 1982-06-14 1983-10-11 Standard Microsystems Corporation High-speed merged plane logic function array
JPH01207976A (ja) * 1988-02-15 1989-08-21 Nec Corp 半導体装置
US20030209759A1 (en) 2002-05-10 2003-11-13 Blanchard Richard A. Mosfet device having geometry that permits frequent body contact
KR100485174B1 (ko) 2002-12-24 2005-04-22 동부아남반도체 주식회사 모스 트랜지스터 제조 방법

Also Published As

Publication number Publication date
CN101490843B (zh) 2011-01-26
TW200802869A (en) 2008-01-01
JP2009536789A (ja) 2009-10-15
TW200805662A (en) 2008-01-16
TW200802870A (en) 2008-01-01
TW200805663A (en) 2008-01-16
JP5137947B2 (ja) 2013-02-06
WO2007136556B1 (en) 2008-08-28
TWI420665B (zh) 2013-12-21
EP2030237A2 (en) 2009-03-04
WO2007136556A2 (en) 2007-11-29
TWI429078B (zh) 2014-03-01
EP2030237B1 (en) 2011-02-09
CN101490843A (zh) 2009-07-22
TWI407566B (zh) 2013-09-01
WO2007136556A3 (en) 2008-07-03
KR20090013219A (ko) 2009-02-04

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