CN101432881B - 集成电路芯片中电路模块间的噪声隔离 - Google Patents

集成电路芯片中电路模块间的噪声隔离 Download PDF

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Publication number
CN101432881B
CN101432881B CN2007800064463A CN200780006446A CN101432881B CN 101432881 B CN101432881 B CN 101432881B CN 2007800064463 A CN2007800064463 A CN 2007800064463A CN 200780006446 A CN200780006446 A CN 200780006446A CN 101432881 B CN101432881 B CN 101432881B
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region
circuit
block
module
well
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CN101432881A (zh
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R·M·塞卡雷努
S·K·本纳杰
O·L·哈丁
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/051—Manufacture or treatment of isolation region based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/50—Isolation regions based on field-effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2007800064463A 2006-02-23 2007-01-18 集成电路芯片中电路模块间的噪声隔离 Active CN101432881B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/360,285 US7608913B2 (en) 2006-02-23 2006-02-23 Noise isolation between circuit blocks in an integrated circuit chip
US11/360,285 2006-02-23
PCT/US2007/060655 WO2007098303A2 (en) 2006-02-23 2007-01-18 Noise isolation between circuit blocks in an integrated circuit chip

Publications (2)

Publication Number Publication Date
CN101432881A CN101432881A (zh) 2009-05-13
CN101432881B true CN101432881B (zh) 2010-12-08

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CN2007800064463A Active CN101432881B (zh) 2006-02-23 2007-01-18 集成电路芯片中电路模块间的噪声隔离

Country Status (7)

Country Link
US (3) US7608913B2 (https=)
EP (1) EP1989738B1 (https=)
JP (1) JP5301290B2 (https=)
KR (1) KR101342877B1 (https=)
CN (1) CN101432881B (https=)
TW (1) TWI427762B (https=)
WO (1) WO2007098303A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7881679B1 (en) * 2007-03-14 2011-02-01 Rf Micro Devices, Inc. Method and apparatus for integrating power amplifiers with phase locked loop in a single chip transceiver
US9202760B2 (en) * 2012-06-26 2015-12-01 Infineon Technologies Ag Semiconductor devices and structures
US8957496B2 (en) 2013-04-17 2015-02-17 Freescale Semiconductor, Inc. Integrated circuit chip with discontinuous guard ring
KR102442933B1 (ko) * 2017-08-21 2022-09-15 삼성전자주식회사 3차원 반도체 장치
JP7091130B2 (ja) * 2018-05-08 2022-06-27 キオクシア株式会社 半導体記憶装置
US10615252B2 (en) 2018-08-06 2020-04-07 Nxp Usa, Inc. Device isolation
JP2022516495A (ja) * 2018-12-29 2022-02-28 華為技術有限公司 信号分離装置及び信号分離方法
US20240388309A1 (en) * 2022-10-26 2024-11-21 Radu Mircea Secareanu Binary Data Compression / Decompression Method

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JPS5772376A (en) * 1980-10-24 1982-05-06 Hitachi Ltd Protective circuit device for semiconductor
JPS61214550A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体装置
US4853759A (en) * 1986-09-29 1989-08-01 American Microsystems, Inc. Integrated circuit filter with reduced die area
JP3036752B2 (ja) * 1988-12-21 2000-04-24 九州日本電気株式会社 半導体装置
US5196920A (en) 1992-04-21 1993-03-23 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device for limiting capacitive coupling between adjacent circuit blocks
JP3251735B2 (ja) * 1992-09-25 2002-01-28 株式会社東芝 半導体集積回路装置
US5475255A (en) * 1994-06-30 1995-12-12 Motorola Inc. Circuit die having improved substrate noise isolation
US5623159A (en) * 1994-10-03 1997-04-22 Motorola, Inc. Integrated circuit isolation structure for suppressing high-frequency cross-talk
JP3077592B2 (ja) * 1996-06-27 2000-08-14 日本電気株式会社 デジタル回路とアナログ回路が混在する半導体集積回路装置およびその製造方法
GB2341272B (en) * 1998-09-03 2003-08-20 Ericsson Telefon Ab L M High voltage shield
US6424022B1 (en) * 2000-03-12 2002-07-23 Mobilink Telecom, Inc. Guard mesh for noise isolation in highly integrated circuits
US6479869B1 (en) * 1999-10-01 2002-11-12 Rohm Co., Ltd. Semiconductor device with enhanced protection from electrostatic breakdown
JP4424830B2 (ja) * 2000-06-30 2010-03-03 Ｏｋｉセミコンダクタ株式会社 半導体装置
JP3834212B2 (ja) * 2001-05-22 2006-10-18 Ｎｅｃエレクトロニクス株式会社 半導体集積回路装置
WO2003005449A1 (en) 2001-07-03 2003-01-16 Tripath Technology, Inc. Substrate connection in an integrated power circuit
US6700771B2 (en) 2001-08-30 2004-03-02 Micron Technology, Inc. Decoupling capacitor for high frequency noise immunity
US6563181B1 (en) * 2001-11-02 2003-05-13 Motorola, Inc. High frequency signal isolation in a semiconductor device
US6747294B1 (en) * 2002-09-25 2004-06-08 Polarfab Llc Guard ring structure for reducing crosstalk and latch-up in integrated circuits
US6744112B2 (en) 2002-10-01 2004-06-01 International Business Machines Corporation Multiple chip guard rings for integrated circuit and chip guard ring interconnect
US7052939B2 (en) 2002-11-26 2006-05-30 Freescale Semiconductor, Inc. Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications
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US6900969B2 (en) * 2002-12-11 2005-05-31 Texas Instruments Incorporated ESD protection with uniform substrate bias
JP3784382B2 (ja) * 2003-07-17 2006-06-07 株式会社半導体理工学研究センター 半導体集積回路
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Also Published As

Publication number Publication date
TW200802795A (en) 2008-01-01
EP1989738A2 (en) 2008-11-12
EP1989738A4 (en) 2012-07-25
EP1989738B1 (en) 2015-03-11
US20090302440A1 (en) 2009-12-10
US20070194394A1 (en) 2007-08-23
KR20080109731A (ko) 2008-12-17
US20130207229A1 (en) 2013-08-15
KR101342877B1 (ko) 2013-12-19
WO2007098303A2 (en) 2007-08-30
CN101432881A (zh) 2009-05-13
JP2009527927A (ja) 2009-07-30
US7608913B2 (en) 2009-10-27
JP5301290B2 (ja) 2013-09-25
TWI427762B (zh) 2014-02-21
US9048110B2 (en) 2015-06-02
WO2007098303A3 (en) 2009-01-29

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Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.