JP5291001B2 - ページ消去機能におけるアドレス変化検出によるデコーディング制御 - Google Patents

ページ消去機能におけるアドレス変化検出によるデコーディング制御 Download PDF

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Publication number
JP5291001B2
JP5291001B2 JP2009551083A JP2009551083A JP5291001B2 JP 5291001 B2 JP5291001 B2 JP 5291001B2 JP 2009551083 A JP2009551083 A JP 2009551083A JP 2009551083 A JP2009551083 A JP 2009551083A JP 5291001 B2 JP5291001 B2 JP 5291001B2
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Japan
Prior art keywords
address
page
block
circuit
reset
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Expired - Fee Related
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JP2009551083A
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Japanese (ja)
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JP2010519674A5 (enExample
JP2010519674A (ja
Inventor
ホン・ボム・ピョン
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Mosaid Technologies Inc
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Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
JP2009551083A 2007-02-27 2008-02-08 ページ消去機能におけるアドレス変化検出によるデコーディング制御 Expired - Fee Related JP5291001B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/711,043 US7577059B2 (en) 2007-02-27 2007-02-27 Decoding control with address transition detection in page erase function
US11/711,043 2007-02-27
PCT/CA2008/000252 WO2008104049A1 (en) 2007-02-27 2008-02-08 Decoding control with address transition detection in page erase function

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013120173A Division JP5544442B2 (ja) 2007-02-27 2013-06-06 ページ消去機能におけるアドレス変化検出によるデコーディング制御

Publications (3)

Publication Number Publication Date
JP2010519674A JP2010519674A (ja) 2010-06-03
JP2010519674A5 JP2010519674A5 (enExample) 2011-03-03
JP5291001B2 true JP5291001B2 (ja) 2013-09-18

Family

ID=39715719

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009551083A Expired - Fee Related JP5291001B2 (ja) 2007-02-27 2008-02-08 ページ消去機能におけるアドレス変化検出によるデコーディング制御
JP2013120173A Expired - Fee Related JP5544442B2 (ja) 2007-02-27 2013-06-06 ページ消去機能におけるアドレス変化検出によるデコーディング制御

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JP2013120173A Expired - Fee Related JP5544442B2 (ja) 2007-02-27 2013-06-06 ページ消去機能におけるアドレス変化検出によるデコーディング制御

Country Status (9)

Country Link
US (2) US7577059B2 (enExample)
EP (1) EP2132748B1 (enExample)
JP (2) JP5291001B2 (enExample)
KR (2) KR20140019881A (enExample)
CN (1) CN101636790B (enExample)
CA (1) CA2676639A1 (enExample)
ES (1) ES2423283T3 (enExample)
TW (1) TWI456576B (enExample)
WO (1) WO2008104049A1 (enExample)

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US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US8189390B2 (en) * 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
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KR101605911B1 (ko) 2010-07-09 2016-03-23 에스케이하이닉스 주식회사 불휘발성 메모리 소자 및 그 소거방법
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KR102025088B1 (ko) 2012-09-03 2019-09-25 삼성전자 주식회사 메모리 컨트롤러 및 상기 메모리 컨트롤러를 포함하는 전자장치
US20140071783A1 (en) * 2012-09-13 2014-03-13 Lsi Corporation Memory device with clock generation based on segmented address change detection
CN104217751A (zh) * 2013-06-03 2014-12-17 辉达公司 一种存储器
FR3006804A1 (fr) * 2013-06-05 2014-12-12 St Microelectronics Rousset Procede d’effacement par bloc d’une memoire de type eeprom effacable par page
EP3023990A1 (en) * 2014-11-20 2016-05-25 Nxp B.V. Multi independent page erase
CN108962319B (zh) * 2018-06-20 2021-03-26 芯天下技术股份有限公司 一种译码器控制电路及Nor Flash存储器的版图布局方法
CN110910923A (zh) * 2018-09-14 2020-03-24 北京兆易创新科技股份有限公司 一种字线译码方法及非易失存储器系统
US11250895B1 (en) * 2020-11-04 2022-02-15 Qualcomm Incorporated Systems and methods for driving wordlines using set-reset latches

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Also Published As

Publication number Publication date
EP2132748A4 (en) 2010-04-07
US7577059B2 (en) 2009-08-18
TWI456576B (zh) 2014-10-11
US7778107B2 (en) 2010-08-17
EP2132748A1 (en) 2009-12-16
EP2132748B1 (en) 2013-05-22
US20080205164A1 (en) 2008-08-28
WO2008104049A1 (en) 2008-09-04
JP5544442B2 (ja) 2014-07-09
CA2676639A1 (en) 2008-09-04
ES2423283T3 (es) 2013-09-19
KR101469295B1 (ko) 2014-12-04
JP2010519674A (ja) 2010-06-03
US20090185424A1 (en) 2009-07-23
KR20140019881A (ko) 2014-02-17
KR20090125142A (ko) 2009-12-03
TW200905686A (en) 2009-02-01
CN101636790B (zh) 2013-04-03
CN101636790A (zh) 2010-01-27
JP2013168211A (ja) 2013-08-29

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