KR20140019881A - 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어 - Google Patents

페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어 Download PDF

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Publication number
KR20140019881A
KR20140019881A KR1020147002657A KR20147002657A KR20140019881A KR 20140019881 A KR20140019881 A KR 20140019881A KR 1020147002657 A KR1020147002657 A KR 1020147002657A KR 20147002657 A KR20147002657 A KR 20147002657A KR 20140019881 A KR20140019881 A KR 20140019881A
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KR
South Korea
Prior art keywords
address
bit block
block address
bit
page
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Ceased
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KR1020147002657A
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English (en)
Korean (ko)
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홍범 편
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모사이드 테크놀로지스 인코퍼레이티드
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Publication of KR20140019881A publication Critical patent/KR20140019881A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/20—Address safety or protection circuits, i.e. arrangements for preventing unauthorized or accidental access

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
KR1020147002657A 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어 Ceased KR20140019881A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/711,043 2007-02-27
US11/711,043 US7577059B2 (en) 2007-02-27 2007-02-27 Decoding control with address transition detection in page erase function
PCT/CA2008/000252 WO2008104049A1 (en) 2007-02-27 2008-02-08 Decoding control with address transition detection in page erase function

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020097020083A Division KR101469295B1 (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어

Publications (1)

Publication Number Publication Date
KR20140019881A true KR20140019881A (ko) 2014-02-17

Family

ID=39715719

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020147002657A Ceased KR20140019881A (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어
KR1020097020083A Expired - Fee Related KR101469295B1 (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020097020083A Expired - Fee Related KR101469295B1 (ko) 2007-02-27 2008-02-08 페이지 삭제 기능내의 어드레스 천이 검출을 갖춘 디코딩 제어

Country Status (9)

Country Link
US (2) US7577059B2 (enExample)
EP (1) EP2132748B1 (enExample)
JP (2) JP5291001B2 (enExample)
KR (2) KR20140019881A (enExample)
CN (1) CN101636790B (enExample)
CA (1) CA2676639A1 (enExample)
ES (1) ES2423283T3 (enExample)
TW (1) TWI456576B (enExample)
WO (1) WO2008104049A1 (enExample)

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US7577059B2 (en) * 2007-02-27 2009-08-18 Mosaid Technologies Incorporated Decoding control with address transition detection in page erase function
US8189390B2 (en) * 2009-03-05 2012-05-29 Mosaid Technologies Incorporated NAND flash architecture with multi-level row decoding
KR101636015B1 (ko) * 2010-02-11 2016-07-05 삼성전자주식회사 불휘발성 데이터 저장 장치, 그것의 프로그램 방법, 그리고 그것을 포함하는 메모리 시스템
KR101605911B1 (ko) 2010-07-09 2016-03-23 에스케이하이닉스 주식회사 불휘발성 메모리 소자 및 그 소거방법
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US9047936B2 (en) * 2012-05-29 2015-06-02 Lsi Corporation Memory device having control circuitry for write tracking using feedback-based controller
KR20140007990A (ko) 2012-07-09 2014-01-21 삼성전자주식회사 불휘발성 램을 포함하는 사용자 장치 및 그것의 데이터 관리 방법
KR102025088B1 (ko) 2012-09-03 2019-09-25 삼성전자 주식회사 메모리 컨트롤러 및 상기 메모리 컨트롤러를 포함하는 전자장치
US20140071783A1 (en) * 2012-09-13 2014-03-13 Lsi Corporation Memory device with clock generation based on segmented address change detection
CN104217751A (zh) * 2013-06-03 2014-12-17 辉达公司 一种存储器
FR3006804A1 (fr) * 2013-06-05 2014-12-12 St Microelectronics Rousset Procede d’effacement par bloc d’une memoire de type eeprom effacable par page
EP3023990A1 (en) * 2014-11-20 2016-05-25 Nxp B.V. Multi independent page erase
CN108962319B (zh) * 2018-06-20 2021-03-26 芯天下技术股份有限公司 一种译码器控制电路及Nor Flash存储器的版图布局方法
CN110910923A (zh) * 2018-09-14 2020-03-24 北京兆易创新科技股份有限公司 一种字线译码方法及非易失存储器系统
US11250895B1 (en) * 2020-11-04 2022-02-15 Qualcomm Incorporated Systems and methods for driving wordlines using set-reset latches

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Also Published As

Publication number Publication date
EP2132748B1 (en) 2013-05-22
JP5291001B2 (ja) 2013-09-18
US20090185424A1 (en) 2009-07-23
CA2676639A1 (en) 2008-09-04
KR20090125142A (ko) 2009-12-03
TWI456576B (zh) 2014-10-11
CN101636790B (zh) 2013-04-03
TW200905686A (en) 2009-02-01
JP2013168211A (ja) 2013-08-29
EP2132748A4 (en) 2010-04-07
EP2132748A1 (en) 2009-12-16
JP2010519674A (ja) 2010-06-03
WO2008104049A1 (en) 2008-09-04
JP5544442B2 (ja) 2014-07-09
US7577059B2 (en) 2009-08-18
US7778107B2 (en) 2010-08-17
CN101636790A (zh) 2010-01-27
US20080205164A1 (en) 2008-08-28
KR101469295B1 (ko) 2014-12-04
ES2423283T3 (es) 2013-09-19

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