JP5172202B2 - 単結晶の製造方法 - Google Patents

単結晶の製造方法 Download PDF

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Publication number
JP5172202B2
JP5172202B2 JP2007125848A JP2007125848A JP5172202B2 JP 5172202 B2 JP5172202 B2 JP 5172202B2 JP 2007125848 A JP2007125848 A JP 2007125848A JP 2007125848 A JP2007125848 A JP 2007125848A JP 5172202 B2 JP5172202 B2 JP 5172202B2
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JP
Japan
Prior art keywords
dopant
single crystal
oxygen concentration
crucible
flow rate
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JP2007125848A
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English (en)
Japanese (ja)
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JP2008280212A (ja
JP2008280212A5 (enExample
Inventor
康人 鳴嶋
真一 川添
福生 小川
恒成 朝長
康幸 太田
利通 久保田
慎介 西原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
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Sumco Techxiv Corp
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Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Priority to JP2007125848A priority Critical patent/JP5172202B2/ja
Priority to PCT/JP2008/058483 priority patent/WO2008142993A1/ja
Priority to DE112008000033.6T priority patent/DE112008000033B4/de
Priority to US12/515,730 priority patent/US8110042B2/en
Publication of JP2008280212A publication Critical patent/JP2008280212A/ja
Publication of JP2008280212A5 publication Critical patent/JP2008280212A5/ja
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2007125848A 2007-05-10 2007-05-10 単結晶の製造方法 Active JP5172202B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007125848A JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法
PCT/JP2008/058483 WO2008142993A1 (ja) 2007-05-10 2008-05-07 単結晶の製造方法
DE112008000033.6T DE112008000033B4 (de) 2007-05-10 2008-05-07 Verfahren zum Herstellen eines Einkristalls
US12/515,730 US8110042B2 (en) 2007-05-10 2008-05-07 Method for manufacturing single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007125848A JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2008280212A JP2008280212A (ja) 2008-11-20
JP2008280212A5 JP2008280212A5 (enExample) 2010-12-16
JP5172202B2 true JP5172202B2 (ja) 2013-03-27

Family

ID=40031708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007125848A Active JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法

Country Status (4)

Country Link
US (1) US8110042B2 (enExample)
JP (1) JP5172202B2 (enExample)
DE (1) DE112008000033B4 (enExample)
WO (1) WO2008142993A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5226496B2 (ja) * 2008-12-17 2013-07-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
CN103249875B (zh) * 2010-09-03 2016-10-12 Gtatip控股有限责任公司 镓、铟、或铝掺杂单晶硅
KR101252915B1 (ko) * 2010-09-06 2013-04-09 주식회사 엘지실트론 단결정 잉곳 제조방법
KR101303422B1 (ko) * 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
KR101855814B1 (ko) * 2011-09-01 2018-05-10 신에쯔 한도타이 가부시키가이샤 실리콘 단결정의 제조방법
KR101384060B1 (ko) 2012-08-03 2014-04-09 주식회사 엘지실트론 실리콘 단결정 잉곳 성장 방법
CN113417003A (zh) * 2021-06-22 2021-09-21 宁夏中欣晶圆半导体科技有限公司 能够降低头部氧含量的大直径单晶硅生产方法及装置
JP7359241B2 (ja) * 2022-03-15 2023-10-11 株式会社Sumco シリコン単結晶の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
US5292487A (en) * 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
JP2978607B2 (ja) * 1991-09-17 1999-11-15 新日本製鐵株式会社 シリコン単結晶の製造方法
JP2760932B2 (ja) * 1993-03-29 1998-06-04 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の酸素濃度制御方法
DE69428302T2 (de) * 1993-03-29 2002-07-04 Kabushiki Kaisha Toshiba, Kawasaki Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.
JP2691393B2 (ja) 1993-12-28 1997-12-17 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の調整方法
US5477805A (en) 1993-12-28 1995-12-26 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal
JPH09227275A (ja) 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
JP3787452B2 (ja) * 1999-02-10 2006-06-21 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
KR100735902B1 (ko) * 2000-02-28 2007-07-04 신에쯔 한도타이 가부시키가이샤 실리콘 단결정의 제조방법 및 실리콘 단결정
DE10250822B4 (de) 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium
JP4153293B2 (ja) * 2002-12-17 2008-09-24 コバレントマテリアル株式会社 シリコン単結晶引上方法
JP2007112663A (ja) * 2005-10-20 2007-05-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法

Also Published As

Publication number Publication date
JP2008280212A (ja) 2008-11-20
US20100050931A1 (en) 2010-03-04
US8110042B2 (en) 2012-02-07
WO2008142993A1 (ja) 2008-11-27
DE112008000033B4 (de) 2020-02-27
DE112008000033T5 (de) 2009-10-08

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