DE112008000033B4 - Verfahren zum Herstellen eines Einkristalls - Google Patents

Verfahren zum Herstellen eines Einkristalls Download PDF

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Publication number
DE112008000033B4
DE112008000033B4 DE112008000033.6T DE112008000033T DE112008000033B4 DE 112008000033 B4 DE112008000033 B4 DE 112008000033B4 DE 112008000033 T DE112008000033 T DE 112008000033T DE 112008000033 B4 DE112008000033 B4 DE 112008000033B4
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Germany
Prior art keywords
melt
single crystal
dopant
crucible
oxygen concentration
Prior art date
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DE112008000033.6T
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German (de)
English (en)
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DE112008000033T5 (de
Inventor
Yasuhito Narushima
Shinichi Kawazoe
Fukuo Ogawa
Tsuneaki Tomonaga
Yasuyuki Ohta
Toshimichi Kubota
Shinsuke Nishihara
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Sumco Techxiv Corp
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Sumco Techxiv Corp
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Publication of DE112008000033T5 publication Critical patent/DE112008000033T5/de
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112008000033.6T 2007-05-10 2008-05-07 Verfahren zum Herstellen eines Einkristalls Active DE112008000033B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007125848A JP5172202B2 (ja) 2007-05-10 2007-05-10 単結晶の製造方法
JP2007-125848 2007-05-10
PCT/JP2008/058483 WO2008142993A1 (ja) 2007-05-10 2008-05-07 単結晶の製造方法

Publications (2)

Publication Number Publication Date
DE112008000033T5 DE112008000033T5 (de) 2009-10-08
DE112008000033B4 true DE112008000033B4 (de) 2020-02-27

Family

ID=40031708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008000033.6T Active DE112008000033B4 (de) 2007-05-10 2008-05-07 Verfahren zum Herstellen eines Einkristalls

Country Status (4)

Country Link
US (1) US8110042B2 (enExample)
JP (1) JP5172202B2 (enExample)
DE (1) DE112008000033B4 (enExample)
WO (1) WO2008142993A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5226496B2 (ja) * 2008-12-17 2013-07-03 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
KR101841032B1 (ko) * 2010-09-03 2018-03-22 지티에이티 아이피 홀딩 엘엘씨 갈륨, 인듐 또는 알루미늄으로 도핑된 실리콘 단결정
KR101252915B1 (ko) * 2010-09-06 2013-04-09 주식회사 엘지실트론 단결정 잉곳 제조방법
KR101303422B1 (ko) * 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
JP5790766B2 (ja) * 2011-09-01 2015-10-07 信越半導体株式会社 シリコン単結晶の製造方法
KR101384060B1 (ko) 2012-08-03 2014-04-09 주식회사 엘지실트론 실리콘 단결정 잉곳 성장 방법
CN113417003A (zh) * 2021-06-22 2021-09-21 宁夏中欣晶圆半导体科技有限公司 能够降低头部氧含量的大直径单晶硅生产方法及装置
JP7359241B2 (ja) * 2022-03-15 2023-10-11 株式会社Sumco シリコン単結晶の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157600A1 (en) * 2000-02-28 2002-10-31 Izumi Fusegawa Method for preparing silicon single crystal and silicon single crystal
JP2004196569A (ja) * 2002-12-17 2004-07-15 Toshiba Ceramics Co Ltd シリコン単結晶引上方法
DE112006002850T5 (de) * 2005-10-20 2009-04-30 Komatsu Denshi Kinzoku K.K., Hiratsuka Vorrichtung und Verfahren zur Herstellung von Halbleitereinkristallen

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
US5292487A (en) * 1991-04-16 1994-03-08 Sumitomo Electric Industries, Ltd. Czochralski method using a member for intercepting radiation from raw material molten solution and apparatus therefor
JP2978607B2 (ja) * 1991-09-17 1999-11-15 新日本製鐵株式会社 シリコン単結晶の製造方法
JP2760932B2 (ja) * 1993-03-29 1998-06-04 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の酸素濃度制御方法
EP0625595B1 (en) * 1993-03-29 2001-09-19 Research Development Corporation Of Japan Control of oxygen concentration in single crystal pulled up from melt containing group-V element
JP2691393B2 (ja) 1993-12-28 1997-12-17 科学技術振興事業団 単結晶引上げ用Ｓｉ融液の調整方法
US5477805A (en) 1993-12-28 1995-12-26 Research Development Corporation Of Japan Preparation of silicon melt for use in pull method of manufacturing single crystal
JPH09227275A (ja) 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
JP3787452B2 (ja) * 1999-02-10 2006-06-21 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
DE10250822B4 (de) 2002-10-31 2006-09-28 Siltronic Ag Verfahren zur Herstellung eines mit leichtflüchtigem Fremdstoff dotierten Einkristalls aus Silicium

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020157600A1 (en) * 2000-02-28 2002-10-31 Izumi Fusegawa Method for preparing silicon single crystal and silicon single crystal
JP2004196569A (ja) * 2002-12-17 2004-07-15 Toshiba Ceramics Co Ltd シリコン単結晶引上方法
DE112006002850T5 (de) * 2005-10-20 2009-04-30 Komatsu Denshi Kinzoku K.K., Hiratsuka Vorrichtung und Verfahren zur Herstellung von Halbleitereinkristallen

Also Published As

Publication number Publication date
US8110042B2 (en) 2012-02-07
WO2008142993A1 (ja) 2008-11-27
US20100050931A1 (en) 2010-03-04
JP5172202B2 (ja) 2013-03-27
DE112008000033T5 (de) 2009-10-08
JP2008280212A (ja) 2008-11-20

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