DE69428302T2 - Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird. - Google Patents

Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.

Info

Publication number
DE69428302T2
DE69428302T2 DE69428302T DE69428302T DE69428302T2 DE 69428302 T2 DE69428302 T2 DE 69428302T2 DE 69428302 T DE69428302 T DE 69428302T DE 69428302 T DE69428302 T DE 69428302T DE 69428302 T2 DE69428302 T2 DE 69428302T2
Authority
DE
Germany
Prior art keywords
regulation
group
single crystal
oxygen concentration
melt containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428302T
Other languages
English (en)
Other versions
DE69428302D1 (de
Inventor
Xingming Huang
Kouji Izunome
Kazutaka Terashima
Yutaka Shiraishi
Hitoshi Sasaki
Shigeyuki Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Toshiba Corp
Japan Science and Technology Agency
Original Assignee
Toshiba Corp
Research Development Corp of Japan
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5069924A external-priority patent/JP2760932B2/ja
Priority claimed from JP5335358A external-priority patent/JP2760940B2/ja
Priority claimed from JP33535793A external-priority patent/JP2720283B2/ja
Priority claimed from JP33535693A external-priority patent/JP2720282B2/ja
Application filed by Toshiba Corp, Research Development Corp of Japan, Toshiba Ceramics Co Ltd filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69428302D1 publication Critical patent/DE69428302D1/de
Publication of DE69428302T2 publication Critical patent/DE69428302T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/916—Oxygen testing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69428302T 1993-03-29 1994-03-18 Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird. Expired - Fee Related DE69428302T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP5069924A JP2760932B2 (ja) 1993-03-29 1993-03-29 単結晶引上げ用Ｓｉ融液の酸素濃度制御方法
JP5335358A JP2760940B2 (ja) 1993-12-28 1993-12-28 雰囲気制御により酸素濃度を調整するＳｉ単結晶の引上げ装置
JP33535793A JP2720283B2 (ja) 1993-12-28 1993-12-28 酸素濃度を制御したＳｉ単結晶の引上げ方法
JP33535593 1993-12-28
JP33535693A JP2720282B2 (ja) 1993-12-28 1993-12-28 酸素濃度を制御したＳｉ単結晶の引上げ方法

Publications (2)

Publication Number Publication Date
DE69428302D1 DE69428302D1 (de) 2001-10-25
DE69428302T2 true DE69428302T2 (de) 2002-07-04

Family

ID=27524216

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428302T Expired - Fee Related DE69428302T2 (de) 1993-03-29 1994-03-18 Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.

Country Status (3)

Country Link
US (1) US5524574A (de)
EP (1) EP0625595B1 (de)
DE (1) DE69428302T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5840120A (en) * 1996-01-22 1998-11-24 Memc Electronic Materials, Inc. Apparatus for controlling nucleation of oxygen precipitates in silicon crystals
US5904768A (en) * 1996-10-15 1999-05-18 Memc Electronic Materials, Inc. Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
US6004393A (en) * 1997-04-22 1999-12-21 Komatsu Electronic Metals Co., Ltd. Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal
JPH10291892A (ja) * 1997-04-22 1998-11-04 Komatsu Electron Metals Co Ltd 結晶中の不純物濃度検出方法および単結晶の製造方法並びに単結晶引上げ装置
US6019838A (en) * 1998-01-05 2000-02-01 Memc Electronic Materials, Inc. Crystal growing apparatus with melt-doping facility
US10294583B2 (en) 2007-04-24 2019-05-21 Sumco Techxiv Corporation Producing method and apparatus of silicon single crystal, and silicon single crystal ingot
JP5118386B2 (ja) * 2007-05-10 2013-01-16 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
JP5172202B2 (ja) * 2007-05-10 2013-03-27 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶の製造方法
JP2009292669A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコンウェーハ
CN110536980B (zh) * 2017-02-28 2021-06-29 胜高股份有限公司 单晶硅锭的制造方法及单晶硅锭
JP6862916B2 (ja) * 2017-02-28 2021-04-21 株式会社Sumco シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
CA1305909C (en) * 1987-06-01 1992-08-04 Michio Kida Apparatus and process for growing crystals of semiconductor materials
JPH085740B2 (ja) * 1988-02-25 1996-01-24 株式会社東芝 半導体の結晶引上げ方法
FI893246A (fi) * 1988-07-07 1990-01-08 Nippon Kokan Kk Foerfarande och anordning foer framstaellning av kiselkristaller.
JP2813592B2 (ja) * 1989-09-29 1998-10-22 住友シチックス株式会社 単結晶製造方法
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JPH0777999B2 (ja) * 1989-11-24 1995-08-23 信越半導体株式会社 アンチモンドープ単結晶シリコンの育成方法
US5260037A (en) * 1990-03-12 1993-11-09 Osaka Titanium Co., Ltd. Apparatus for producing silicon single crystal
JP2686460B2 (ja) * 1990-03-12 1997-12-08 住友シチックス株式会社 単結晶製造方法
JPH04317493A (ja) * 1991-04-15 1992-11-09 Nkk Corp シリコン単結晶の製造装置
JP2783049B2 (ja) * 1992-02-28 1998-08-06 信越半導体株式会社 単結晶シリコン棒の製造方法及び製造装置

Also Published As

Publication number Publication date
EP0625595A2 (de) 1994-11-23
US5524574A (en) 1996-06-11
EP0625595A3 (de) 1997-04-23
EP0625595B1 (de) 2001-09-19
DE69428302D1 (de) 2001-10-25

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee