DE69428302D1 - Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird. - Google Patents
Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird.Info
- Publication number
- DE69428302D1 DE69428302D1 DE69428302T DE69428302T DE69428302D1 DE 69428302 D1 DE69428302 D1 DE 69428302D1 DE 69428302 T DE69428302 T DE 69428302T DE 69428302 T DE69428302 T DE 69428302T DE 69428302 D1 DE69428302 D1 DE 69428302D1
- Authority
- DE
- Germany
- Prior art keywords
- regulation
- group
- single crystal
- oxygen concentration
- melt containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/916—Oxygen testing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5069924A JP2760932B2 (ja) | 1993-03-29 | 1993-03-29 | 単結晶引上げ用Si融液の酸素濃度制御方法 |
JP5335358A JP2760940B2 (ja) | 1993-12-28 | 1993-12-28 | 雰囲気制御により酸素濃度を調整するSi単結晶の引上げ装置 |
JP33535593 | 1993-12-28 | ||
JP33535793A JP2720283B2 (ja) | 1993-12-28 | 1993-12-28 | 酸素濃度を制御したSi単結晶の引上げ方法 |
JP33535693A JP2720282B2 (ja) | 1993-12-28 | 1993-12-28 | 酸素濃度を制御したSi単結晶の引上げ方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69428302D1 true DE69428302D1 (de) | 2001-10-25 |
DE69428302T2 DE69428302T2 (de) | 2002-07-04 |
Family
ID=27524216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69428302T Expired - Fee Related DE69428302T2 (de) | 1993-03-29 | 1994-03-18 | Regulierung der Sauerstoffkonzentration in einem Einkristall, der aus einer ein Gruppe V Element enthaltenden Schmelze gezogenen wird. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5524574A (de) |
EP (1) | EP0625595B1 (de) |
DE (1) | DE69428302T2 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5840120A (en) * | 1996-01-22 | 1998-11-24 | Memc Electronic Materials, Inc. | Apparatus for controlling nucleation of oxygen precipitates in silicon crystals |
US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
US6004393A (en) * | 1997-04-22 | 1999-12-21 | Komatsu Electronic Metals Co., Ltd. | Detecting method of impurity concentration in crystal, method for producing single crystal and apparatus for the pull-up of a single crystal |
JPH10291892A (ja) * | 1997-04-22 | 1998-11-04 | Komatsu Electron Metals Co Ltd | 結晶中の不純物濃度検出方法および単結晶の製造方法並びに単結晶引上げ装置 |
US6019838A (en) * | 1998-01-05 | 2000-02-01 | Memc Electronic Materials, Inc. | Crystal growing apparatus with melt-doping facility |
DE112008000893B8 (de) | 2007-04-24 | 2022-02-24 | Sumco Techxiv Corp. | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot |
JP5172202B2 (ja) * | 2007-05-10 | 2013-03-27 | Sumco Techxiv株式会社 | 単結晶の製造方法 |
JP5118386B2 (ja) * | 2007-05-10 | 2013-01-16 | Sumco Techxiv株式会社 | 単結晶の製造方法 |
JP2009292669A (ja) * | 2008-06-03 | 2009-12-17 | Sumco Corp | シリコンウェーハ |
JP6862916B2 (ja) * | 2017-02-28 | 2021-04-21 | 株式会社Sumco | シリコン単結晶インゴットの製造方法およびシリコン単結晶育成装置 |
DE112018001044T5 (de) * | 2017-02-28 | 2019-11-28 | Sumco Corporation | Verfahren zum Herstellen von Silizium-Einkristallbarren, und Silizium-Einkristall-Barren |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0042901B1 (de) * | 1980-06-26 | 1984-10-31 | International Business Machines Corporation | Verfahren zum Kontrollieren des Sauerstoffgehaltes von Siliziumstäben, die nach dem Czochralski-Verfahren hergestellt worden sind |
US4400232A (en) * | 1981-11-09 | 1983-08-23 | Eagle-Picher Industries, Inc. | Control of oxygen- and carbon-related crystal defects in silicon processing |
CA1305909C (en) * | 1987-06-01 | 1992-08-04 | Michio Kida | Apparatus and process for growing crystals of semiconductor materials |
JPH085740B2 (ja) * | 1988-02-25 | 1996-01-24 | 株式会社東芝 | 半導体の結晶引上げ方法 |
FI893246A (fi) * | 1988-07-07 | 1990-01-08 | Nippon Kokan Kk | Foerfarande och anordning foer framstaellning av kiselkristaller. |
JP2813592B2 (ja) * | 1989-09-29 | 1998-10-22 | 住友シチックス株式会社 | 単結晶製造方法 |
JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
JPH0777999B2 (ja) * | 1989-11-24 | 1995-08-23 | 信越半導体株式会社 | アンチモンドープ単結晶シリコンの育成方法 |
US5260037A (en) * | 1990-03-12 | 1993-11-09 | Osaka Titanium Co., Ltd. | Apparatus for producing silicon single crystal |
JP2686460B2 (ja) * | 1990-03-12 | 1997-12-08 | 住友シチックス株式会社 | 単結晶製造方法 |
JPH04317493A (ja) * | 1991-04-15 | 1992-11-09 | Nkk Corp | シリコン単結晶の製造装置 |
JP2783049B2 (ja) * | 1992-02-28 | 1998-08-06 | 信越半導体株式会社 | 単結晶シリコン棒の製造方法及び製造装置 |
-
1994
- 1994-03-18 DE DE69428302T patent/DE69428302T2/de not_active Expired - Fee Related
- 1994-03-18 EP EP94104297A patent/EP0625595B1/de not_active Expired - Lifetime
- 1994-08-17 US US08/291,833 patent/US5524574A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0625595B1 (de) | 2001-09-19 |
US5524574A (en) | 1996-06-11 |
EP0625595A2 (de) | 1994-11-23 |
DE69428302T2 (de) | 2002-07-04 |
EP0625595A3 (de) | 1997-04-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |