DE112008000893B8 - Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot - Google Patents

Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot Download PDF

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Publication number
DE112008000893B8
DE112008000893B8 DE112008000893.0T DE112008000893T DE112008000893B8 DE 112008000893 B8 DE112008000893 B8 DE 112008000893B8 DE 112008000893 T DE112008000893 T DE 112008000893T DE 112008000893 B8 DE112008000893 B8 DE 112008000893B8
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Prior art keywords
silicon
monocrystals
monocrystal ingot
producing
producing silicon
Prior art date
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Application number
DE112008000893.0T
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English (en)
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DE112008000893T5 (de
DE112008000893B4 (de
Inventor
Yasuhito Narushima
Shinichi Kawazoe
Fukuo Ogawa
Masahiro Irokawa
Toshimichi Kubota
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Sumco Techxiv Corp
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Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007114184A external-priority patent/JP5437565B2/ja
Priority claimed from JP2007114183A external-priority patent/JP5176101B2/ja
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Publication of DE112008000893T5 publication Critical patent/DE112008000893T5/de
Publication of DE112008000893B4 publication Critical patent/DE112008000893B4/de
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Publication of DE112008000893B8 publication Critical patent/DE112008000893B8/de
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112008000893.0T 2007-04-24 2008-04-23 Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot Active DE112008000893B8 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2007-114184 2007-04-24
JP2007114184A JP5437565B2 (ja) 2007-04-24 2007-04-24 半導体単結晶の製造装置
JP2007114183A JP5176101B2 (ja) 2007-04-24 2007-04-24 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット
JP2007-114183 2007-04-24
PCT/JP2008/057862 WO2008133278A1 (ja) 2007-04-24 2008-04-23 シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット

Publications (3)

Publication Number Publication Date
DE112008000893T5 DE112008000893T5 (de) 2010-01-28
DE112008000893B4 DE112008000893B4 (de) 2021-07-29
DE112008000893B8 true DE112008000893B8 (de) 2022-02-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE112008000893.0T Active DE112008000893B8 (de) 2007-04-24 2008-04-23 Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot

Country Status (3)

Country Link
US (1) US10294583B2 (de)
DE (1) DE112008000893B8 (de)
WO (1) WO2008133278A1 (de)

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JP5302556B2 (ja) 2008-03-11 2013-10-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置及びシリコン単結晶の製造方法
KR101690490B1 (ko) * 2010-10-21 2016-12-28 에스케이이노베이션 주식회사 탄화규소 단결정의 제조방법 및 장치
US9102035B2 (en) 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
US20160017513A1 (en) * 2013-03-15 2016-01-21 Memc Electronic Materials S.P.A. Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material
JP6528178B2 (ja) * 2015-07-31 2019-06-12 株式会社Sumco シリコン単結晶の製造方法
JP6702141B2 (ja) 2016-11-01 2020-05-27 信越半導体株式会社 単結晶引上げ装置
US11028499B2 (en) * 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
SG11202105783YA (en) * 2018-12-14 2021-06-29 Globalwafers Co Ltd Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
US11028500B2 (en) * 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
EP3835463A1 (de) 2019-12-13 2021-06-16 Siltronic AG Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist
US11499245B2 (en) 2020-12-30 2022-11-15 Globalwafers Co., Ltd. Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems
US11795569B2 (en) 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant
KR20230124727A (ko) * 2020-12-31 2023-08-25 글로벌웨이퍼스 씨오., 엘티디. 기화된 도펀트를 사용하여 단결정 실리콘 잉곳을 생성하기위한 시스템들 및 방법들
US11866844B2 (en) * 2020-12-31 2024-01-09 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using a vaporized dopant
CN113862775B (zh) * 2021-09-30 2022-06-10 西安奕斯伟材料科技有限公司 一种用于制造掺氮单晶硅的设备及方法
CN114318507B (zh) * 2021-12-23 2023-10-31 山东有研半导体材料有限公司 一种重掺砷大直径低阻硅单晶的拉制方法
EP4353878A1 (de) 2022-10-14 2024-04-17 Siltronic AG Verfahren zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist, gemäss der cz-methode

Citations (4)

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Publication number Priority date Publication date Assignee Title
GB797377A (en) 1955-10-18 1958-07-02 Gen Electric Co Ltd Improvements in or relating to the production of semi-conductor bodies
EP0186213A2 (de) 1984-12-28 1986-07-02 Sumitomo Electric Industries Limited Verfahren zur Herstellung von Polykristallen von Halbleiterverbindungen und Vorrichtung zu dessen Durchführung
EP0625595A2 (de) 1993-03-29 1994-11-23 Research Development Corporation of Japan Regulierung der Zauerstoffkonzentration in einem aus einem Gruppe V Element enthaltenden Schmelze gezogenen Einkristall
JP2005336020A (ja) 2004-05-28 2005-12-08 Sumco Corp シリコン単結晶引上装置およびシリコン単結晶の製造方法

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FI20450A (fi) * 1941-08-21 1945-02-10 För avvattning av vattenbemängda material avsedd valspress
JPS59190292A (ja) * 1983-04-08 1984-10-29 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶の抵抗率制御方法
US5260037A (en) * 1990-03-12 1993-11-09 Osaka Titanium Co., Ltd. Apparatus for producing silicon single crystal
DE4318184A1 (de) * 1993-06-01 1994-12-08 Wacker Chemitronic Verfahren und Vorrichtung zum Ziehen von Einkristallen
JP3841863B2 (ja) * 1995-12-13 2006-11-08 コマツ電子金属株式会社 シリコン単結晶の引き上げ方法
JPH09227275A (ja) * 1996-02-28 1997-09-02 Sumitomo Sitix Corp ドープ剤添加装置
CN1432075A (zh) 2000-05-10 2003-07-23 Memc电子材料有限公司 用于将砷掺杂剂加入硅晶体生长工艺中的方法和装置
US6312517B1 (en) * 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
JP2005015312A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP2005247671A (ja) * 2004-03-08 2005-09-15 Toshiba Ceramics Co Ltd 単結晶引上装置
JP4649130B2 (ja) * 2004-06-22 2011-03-09 キヤノン株式会社 撮像装置及びその制御方法
JP4631717B2 (ja) * 2006-01-19 2011-02-16 株式会社Ｓｕｍｃｏ Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
DE112007001701B4 (de) * 2006-07-20 2018-03-15 Sumco Techxiv Corp. Verfahren zur Injektion von Dotierstoff, Dotiervorrichtung und Ziehvorrichtung

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB797377A (en) 1955-10-18 1958-07-02 Gen Electric Co Ltd Improvements in or relating to the production of semi-conductor bodies
EP0186213A2 (de) 1984-12-28 1986-07-02 Sumitomo Electric Industries Limited Verfahren zur Herstellung von Polykristallen von Halbleiterverbindungen und Vorrichtung zu dessen Durchführung
EP0625595A2 (de) 1993-03-29 1994-11-23 Research Development Corporation of Japan Regulierung der Zauerstoffkonzentration in einem aus einem Gruppe V Element enthaltenden Schmelze gezogenen Einkristall
JP2005336020A (ja) 2004-05-28 2005-12-08 Sumco Corp シリコン単結晶引上装置およびシリコン単結晶の製造方法

Also Published As

Publication number Publication date
DE112008000893T5 (de) 2010-01-28
DE112008000893B4 (de) 2021-07-29
WO2008133278A1 (ja) 2008-11-06
US10294583B2 (en) 2019-05-21
US20100294999A1 (en) 2010-11-25

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