DE112008000893B8 - Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot - Google Patents
Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot Download PDFInfo
- Publication number
- DE112008000893B8 DE112008000893B8 DE112008000893.0T DE112008000893T DE112008000893B8 DE 112008000893 B8 DE112008000893 B8 DE 112008000893B8 DE 112008000893 T DE112008000893 T DE 112008000893T DE 112008000893 B8 DE112008000893 B8 DE 112008000893B8
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- monocrystals
- monocrystal ingot
- producing
- producing silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007114183A JP5176101B2 (ja) | 2007-04-24 | 2007-04-24 | シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット |
JP2007-114184 | 2007-04-24 | ||
JP2007-114183 | 2007-04-24 | ||
JP2007114184A JP5437565B2 (ja) | 2007-04-24 | 2007-04-24 | 半導体単結晶の製造装置 |
PCT/JP2008/057862 WO2008133278A1 (ja) | 2007-04-24 | 2008-04-23 | シリコン単結晶の製造方法および装置並びにシリコン単結晶インゴット |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112008000893T5 DE112008000893T5 (de) | 2010-01-28 |
DE112008000893B4 DE112008000893B4 (de) | 2021-07-29 |
DE112008000893B8 true DE112008000893B8 (de) | 2022-02-24 |
Family
ID=39925726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112008000893.0T Active DE112008000893B8 (de) | 2007-04-24 | 2008-04-23 | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot |
Country Status (3)
Country | Link |
---|---|
US (1) | US10294583B2 (de) |
DE (1) | DE112008000893B8 (de) |
WO (1) | WO2008133278A1 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5302556B2 (ja) | 2008-03-11 | 2013-10-02 | Sumco Techxiv株式会社 | シリコン単結晶引上装置及びシリコン単結晶の製造方法 |
KR101690490B1 (ko) * | 2010-10-21 | 2016-12-28 | 에스케이이노베이션 주식회사 | 탄화규소 단결정의 제조방법 및 장치 |
US9102035B2 (en) | 2012-03-12 | 2015-08-11 | MEMC Electronics Materials S.p.A. | Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor |
WO2014141309A1 (en) * | 2013-03-15 | 2014-09-18 | Memc Electronic Materials S.P.A. | Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material |
JP6528178B2 (ja) * | 2015-07-31 | 2019-06-12 | 株式会社Sumco | シリコン単結晶の製造方法 |
JP6702141B2 (ja) | 2016-11-01 | 2020-05-27 | 信越半導体株式会社 | 単結晶引上げ装置 |
US11028499B2 (en) * | 2018-12-14 | 2021-06-08 | Globalwafers Co., Ltd. | Methods for preparing a doped ingot |
SG11202105783YA (en) * | 2018-12-14 | 2021-06-29 | Globalwafers Co Ltd | Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant |
US11028500B2 (en) * | 2018-12-14 | 2021-06-08 | Globalwafers Co., Ltd. | Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant |
EP3835463A1 (de) | 2019-12-13 | 2021-06-16 | Siltronic AG | Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist |
US11499245B2 (en) | 2020-12-30 | 2022-11-15 | Globalwafers Co., Ltd. | Additive feed systems, ingot puller apparatus and methods for forming a single crystal silicon ingot with use of such additive feed systems |
US11866844B2 (en) * | 2020-12-31 | 2024-01-09 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using a vaporized dopant |
WO2022147344A1 (en) * | 2020-12-31 | 2022-07-07 | Globalwafers Co., Ltd. | Systems and methods for producing a single crystal silicon ingot using a vaporized dopant |
US11795569B2 (en) | 2020-12-31 | 2023-10-24 | Globalwafers Co., Ltd. | Systems for producing a single crystal silicon ingot using a vaporized dopant |
CN113862775B (zh) * | 2021-09-30 | 2022-06-10 | 西安奕斯伟材料科技有限公司 | 一种用于制造掺氮单晶硅的设备及方法 |
CN114318507B (zh) * | 2021-12-23 | 2023-10-31 | 山东有研半导体材料有限公司 | 一种重掺砷大直径低阻硅单晶的拉制方法 |
EP4353878A1 (de) | 2022-10-14 | 2024-04-17 | Siltronic AG | Verfahren zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist, gemäss der cz-methode |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB797377A (en) | 1955-10-18 | 1958-07-02 | Gen Electric Co Ltd | Improvements in or relating to the production of semi-conductor bodies |
EP0186213A2 (de) | 1984-12-28 | 1986-07-02 | Sumitomo Electric Industries Limited | Verfahren zur Herstellung von Polykristallen von Halbleiterverbindungen und Vorrichtung zu dessen Durchführung |
EP0625595A2 (de) | 1993-03-29 | 1994-11-23 | Research Development Corporation of Japan | Regulierung der Zauerstoffkonzentration in einem aus einem Gruppe V Element enthaltenden Schmelze gezogenen Einkristall |
JP2005336020A (ja) | 2004-05-28 | 2005-12-08 | Sumco Corp | シリコン単結晶引上装置およびシリコン単結晶の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI20450A (fi) * | 1941-08-21 | 1945-02-10 | För avvattning av vattenbemängda material avsedd valspress | |
JPS59190292A (ja) | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶の抵抗率制御方法 |
US5260037A (en) * | 1990-03-12 | 1993-11-09 | Osaka Titanium Co., Ltd. | Apparatus for producing silicon single crystal |
DE4318184A1 (de) * | 1993-06-01 | 1994-12-08 | Wacker Chemitronic | Verfahren und Vorrichtung zum Ziehen von Einkristallen |
JP3841863B2 (ja) * | 1995-12-13 | 2006-11-08 | コマツ電子金属株式会社 | シリコン単結晶の引き上げ方法 |
JPH09227275A (ja) * | 1996-02-28 | 1997-09-02 | Sumitomo Sitix Corp | ドープ剤添加装置 |
EP1282733A1 (de) | 2000-05-10 | 2003-02-12 | MEMC Electronic Materials, Inc. | Verfahren und vorrichtung zur zuführung von arsen als dotierungsstoff bei einem verfahren zur züchtung von siliziumeinkristallen |
US6312517B1 (en) * | 2000-05-11 | 2001-11-06 | Memc Electronic Materials, Inc. | Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
JP2005015312A (ja) * | 2003-06-27 | 2005-01-20 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
JP2005247671A (ja) | 2004-03-08 | 2005-09-15 | Toshiba Ceramics Co Ltd | 単結晶引上装置 |
JP4649130B2 (ja) * | 2004-06-22 | 2011-03-09 | キヤノン株式会社 | 撮像装置及びその制御方法 |
JP4631717B2 (ja) * | 2006-01-19 | 2011-02-16 | 株式会社Sumco | Igbt用シリコン単結晶ウェーハ及びigbt用シリコン単結晶ウェーハの製造方法 |
DE112007001701B4 (de) * | 2006-07-20 | 2018-03-15 | Sumco Techxiv Corp. | Verfahren zur Injektion von Dotierstoff, Dotiervorrichtung und Ziehvorrichtung |
-
2008
- 2008-04-23 US US12/597,116 patent/US10294583B2/en active Active
- 2008-04-23 WO PCT/JP2008/057862 patent/WO2008133278A1/ja active Application Filing
- 2008-04-23 DE DE112008000893.0T patent/DE112008000893B8/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB797377A (en) | 1955-10-18 | 1958-07-02 | Gen Electric Co Ltd | Improvements in or relating to the production of semi-conductor bodies |
EP0186213A2 (de) | 1984-12-28 | 1986-07-02 | Sumitomo Electric Industries Limited | Verfahren zur Herstellung von Polykristallen von Halbleiterverbindungen und Vorrichtung zu dessen Durchführung |
EP0625595A2 (de) | 1993-03-29 | 1994-11-23 | Research Development Corporation of Japan | Regulierung der Zauerstoffkonzentration in einem aus einem Gruppe V Element enthaltenden Schmelze gezogenen Einkristall |
JP2005336020A (ja) | 2004-05-28 | 2005-12-08 | Sumco Corp | シリコン単結晶引上装置およびシリコン単結晶の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100294999A1 (en) | 2010-11-25 |
WO2008133278A1 (ja) | 2008-11-06 |
US10294583B2 (en) | 2019-05-21 |
DE112008000893B4 (de) | 2021-07-29 |
DE112008000893T5 (de) | 2010-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112008000893B8 (de) | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot | |
DE602005012917D1 (de) | Verfahren und Vorrichtung zum Umformen | |
ATE554621T1 (de) | Verfahren und vorrichtung zum empfang von heimat- nodeb-diensten | |
DE602005004280D1 (de) | Verfahren zum ziehen von sic-einkristallen und sic-einkristall | |
DE602004018436D1 (de) | Vorrichtung und Verfahren zum Herstellen dünner Schichten | |
ATE493215T1 (de) | Dosenkörper und verfahren sowie vorrichtung zum herstellen desselben | |
EP2405038A4 (de) | Tiegel, vorrichtung und verfahren zur herstellung von siliciumcarbid-einzelkristallen | |
DE602006005437D1 (de) | Verfahren und Vorrichtung zum Herstellung von Bauteilen | |
DE502007005166D1 (de) | Vorrichtung und Verfahren zum Herstellen von Doppelpackungen | |
EP1888802A4 (de) | Verfahren und vorrichtung zum ziehen von einkristallinen metallen | |
AT504567A3 (de) | Verfahren und vorrichtung zum bonden von wafern | |
DE60302765D1 (de) | Vorrichtung und verfahren zum herstellen von kristallinen teilchen | |
DE112008003045A5 (de) | Verfahren und Vorrichtung zum Behandeln von Schlamm | |
DE602005021368D1 (de) | Flüssigkristallines material, verfahren zur herstellung von flüssigkristallinem material und flüssigkristalline vorrichtung | |
DE602008002871D1 (de) | Verfahren und Vorrichtung zum Schätzen des Trägheitsmoments und des Lastdrehmoments | |
DE602004003420D1 (de) | Verfahren und Vorrichtung zum Einstellen und Aufrechterhaltung des Abstands zwischen Trommel und Gegenschneide | |
EP1895027A4 (de) | Verfahren zum ziehen eines siliciumeinkristalls und verfarhen zur herstellung eines siliciumwafers | |
AT504810A3 (de) | Vorrichtung und verfahren zum herstellen von pastillen | |
ATE517706T1 (de) | Verfahren und vorrichtung zum stranggiessen doppel-t-vorprofilen | |
DE102004028331A8 (de) | Verfahren zum Kristallisieren von Silicium | |
DE602006007908D1 (de) | Vorrichtung und Verfahren zum polieren von Halbleiterscheiben | |
DE112006003929A5 (de) | Anlage und Verfahren zum Herstellen von Betonwaren | |
DE102008030916A8 (de) | Verfahren und Einrichtung zum Herstellen von Verpackungspolstern | |
ATE539656T1 (de) | Verfahren und vorrichtung zum herstellen von mit servietten bestückten taschen | |
DE602006013773D1 (de) | Vorrichtung und Verfahren zum In-situ-Screening von kristallinem Material |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R012 | Request for examination validly filed |
Effective date: 20150422 |
|
R079 | Amendment of ipc main class |
Free format text: PREVIOUS MAIN CLASS: C30B0029060000 Ipc: C30B0015040000 |
|
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R083 | Amendment of/additions to inventor(s) | ||
R020 | Patent grant now final |