JP2005336020A - シリコン単結晶引上装置およびシリコン単結晶の製造方法 - Google Patents
シリコン単結晶引上装置およびシリコン単結晶の製造方法 Download PDFInfo
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- JP2005336020A JP2005336020A JP2004158982A JP2004158982A JP2005336020A JP 2005336020 A JP2005336020 A JP 2005336020A JP 2004158982 A JP2004158982 A JP 2004158982A JP 2004158982 A JP2004158982 A JP 2004158982A JP 2005336020 A JP2005336020 A JP 2005336020A
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Abstract
【解決手段】 石英ルツボ12の上部側方には、不純物投入装置23が備えられる。不純物投入装置23は、不純物(ドーパント)を収容する収納容器24と、この収納容器を石英ルツボ12に挿脱させる上下動装置25とから構成されている。
【選択図】 図2
Description
12 石英ルツボ
12a 胴部
12b 底部
12c 開放面
16 側面ヒータ
23 不純物投入装置
24 収納容器
25 上下動装置
Claims (3)
- シリコン融液を収容するルツボと、前記ルツボを加熱するヒータとを有し、チョクラルスキー法によりシリコン単結晶を引上げるシリコン単結晶引上装置であって、
前記シリコン単結晶の引上げ途上で前記シリコン融液に不純物を投入する不純物投入装置を備えたことを特徴とするシリコン単結晶引上装置。 - 前記不純物投入装置は、不純物を収容する収納容器と、この収納容器を前記ルツボ内に挿脱させる上下動装置とからなることを特徴とする請求項1に記載のシリコン単結晶引上装置。
- シリコン融液からシリコン単結晶を引上げる引上工程と、前記引上工程の途上で前記シリコン融液に不純物を投入する不純物投入工程とを有し、成長軸方向において比抵抗分布が不連続なシリコン単結晶を得ることを特徴とするシリコン単結晶の製造方法。
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Cited By (14)
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WO2008149686A1 (ja) * | 2007-05-31 | 2008-12-11 | Sumco Techxiv Corporation | ドーパントの注入方法、及びドーピング装置 |
WO2009113441A1 (ja) | 2008-03-11 | 2009-09-17 | Sumco Techxiv株式会社 | シリコン単結晶引上装置及びシリコン単結晶の製造方法 |
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WO2010013719A1 (ja) | 2008-07-30 | 2010-02-04 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
WO2010013718A1 (ja) | 2008-07-30 | 2010-02-04 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
JP2010143795A (ja) * | 2008-12-19 | 2010-07-01 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
JP2010163306A (ja) * | 2009-01-14 | 2010-07-29 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
EP2322696A1 (en) | 2009-11-16 | 2011-05-18 | Sumco Techxiv Corporation | Method of manufacturing silicon single crystal |
US8535439B2 (en) | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
WO2014102387A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Electronic Materials S.P.A. | Liquid doping systems and methods for controlled doping of single crystal semiconductor material |
US20180044814A1 (en) * | 2015-03-10 | 2018-02-15 | Sunedison Semiconductor Limited (Uen201334164H) | Liquid doping systems and methods for controlled doping of a melt |
US10060045B2 (en) | 2012-12-31 | 2018-08-28 | Corner Star Limited | Fabrication of indium-doped silicon by the czochralski method |
US10337118B2 (en) | 2014-11-26 | 2019-07-02 | Corner Star Limited | Apparatus and method for doping a semiconductor melt comprising a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck between a first and second end of the apparatus |
WO2023185038A1 (zh) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | 制造单晶用原料复投装置及包括其的单晶制造装置 |
-
2004
- 2004-05-28 JP JP2004158982A patent/JP4356517B2/ja not_active Expired - Lifetime
Cited By (32)
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DE112008000893B8 (de) | 2007-04-24 | 2022-02-24 | Sumco Techxiv Corp. | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot |
US10294583B2 (en) | 2007-04-24 | 2019-05-21 | Sumco Techxiv Corporation | Producing method and apparatus of silicon single crystal, and silicon single crystal ingot |
DE112008000893B4 (de) | 2007-04-24 | 2021-07-29 | Sumco Techxiv Corp. | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot |
DE112008000893T5 (de) | 2007-04-24 | 2010-01-28 | SUMCO TECHXIV CORP., Omura-shi | Verfahren und Vorrichtung zum Herstellen von Siliziumeinkristallen und Siliziumeinkristallingot |
US8283241B2 (en) | 2007-05-31 | 2012-10-09 | Sumco Techxiv Corporation | Dopant implanting method and doping apparatus |
WO2008149686A1 (ja) * | 2007-05-31 | 2008-12-11 | Sumco Techxiv Corporation | ドーパントの注入方法、及びドーピング装置 |
JP2008297164A (ja) * | 2007-05-31 | 2008-12-11 | Sumco Techxiv株式会社 | ドーパントの注入方法、及びドーピング装置 |
WO2009113441A1 (ja) | 2008-03-11 | 2009-09-17 | Sumco Techxiv株式会社 | シリコン単結晶引上装置及びシリコン単結晶の製造方法 |
US9758899B2 (en) * | 2008-03-11 | 2017-09-12 | Sumco Techxiv Corporation | Manufacturing method of silicon single crystal having low-resistivity electrical characteristics |
US20150107509A1 (en) * | 2008-03-11 | 2015-04-23 | Sumco Techxiv Corporation | Silicon single crystal pulling apparatus and manufacturing method of silicon single crystal |
WO2010013718A1 (ja) | 2008-07-30 | 2010-02-04 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
JP2010030853A (ja) * | 2008-07-30 | 2010-02-12 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
JP2010030852A (ja) * | 2008-07-30 | 2010-02-12 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
WO2010013719A1 (ja) | 2008-07-30 | 2010-02-04 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
US20110120367A1 (en) * | 2008-07-30 | 2011-05-26 | Sumco Techxiv Corporation | Silicon single crystal pull-up apparatus |
US8920561B2 (en) | 2008-07-30 | 2014-12-30 | Sumco Techxiv Corporation | Silicon single crystal pull-up apparatus that pulls a doped silicon single crystal from a melt |
US8518180B2 (en) | 2008-07-30 | 2013-08-27 | Sumco Techxiv Corporation | Silicon single crystal pull-up apparatus having a sliding sample tube |
JP2010143795A (ja) * | 2008-12-19 | 2010-07-01 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
US8535439B2 (en) | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
JP2010163306A (ja) * | 2009-01-14 | 2010-07-29 | Sumco Techxiv株式会社 | シリコン単結晶引上装置 |
EP2322696A1 (en) | 2009-11-16 | 2011-05-18 | Sumco Techxiv Corporation | Method of manufacturing silicon single crystal |
US8840721B2 (en) | 2009-11-16 | 2014-09-23 | Sumco Techxiv Corporation | Method of manufacturing silicon single crystal |
US10006145B2 (en) | 2012-12-31 | 2018-06-26 | Corner Star Limited | Liquid doping systems and methods for controlled doping of single crystal semiconductor material |
US10060045B2 (en) | 2012-12-31 | 2018-08-28 | Corner Star Limited | Fabrication of indium-doped silicon by the czochralski method |
WO2014102387A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Electronic Materials S.P.A. | Liquid doping systems and methods for controlled doping of single crystal semiconductor material |
US10337118B2 (en) | 2014-11-26 | 2019-07-02 | Corner Star Limited | Apparatus and method for doping a semiconductor melt comprising a seed chuck, a seed crystal connected to the seed chuck, and a dopant container connected to the seed chuck between a first and second end of the apparatus |
US20190136406A1 (en) * | 2015-03-10 | 2019-05-09 | Globalwafers Co., Ltd | System for introducing dopant into a melt of semiconductor or solar-grade material |
US20180044814A1 (en) * | 2015-03-10 | 2018-02-15 | Sunedison Semiconductor Limited (Uen201334164H) | Liquid doping systems and methods for controlled doping of a melt |
US10443148B2 (en) * | 2015-03-10 | 2019-10-15 | Globalwafers Co., Ltd. | Methods for controlled doping of a melt including introducing liquid dopant below a surface of the melt |
US11085127B2 (en) | 2015-03-10 | 2021-08-10 | Globalwafers Co., Ltd. | Methods of introducing dopant into a melt of semiconductor or solar-grade material via a feed tube |
US11346016B2 (en) * | 2015-03-10 | 2022-05-31 | Globalwafers Co., Ltd. | System for introducing dopant into a melt of semiconductor or solar-grade material via a feed tube |
WO2023185038A1 (zh) * | 2022-03-31 | 2023-10-05 | Tcl中环新能源科技股份有限公司 | 制造单晶用原料复投装置及包括其的单晶制造装置 |
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