WO2023185038A1 - 制造单晶用原料复投装置及包括其的单晶制造装置 - Google Patents

制造单晶用原料复投装置及包括其的单晶制造装置 Download PDF

Info

Publication number
WO2023185038A1
WO2023185038A1 PCT/CN2022/134985 CN2022134985W WO2023185038A1 WO 2023185038 A1 WO2023185038 A1 WO 2023185038A1 CN 2022134985 W CN2022134985 W CN 2022134985W WO 2023185038 A1 WO2023185038 A1 WO 2023185038A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
barrel
discharge end
moving
raw material
Prior art date
Application number
PCT/CN2022/134985
Other languages
English (en)
French (fr)
Inventor
张野
李晓东
王林
王建平
张石晶
阿·古达木
Original Assignee
Tcl中环新能源科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tcl中环新能源科技股份有限公司 filed Critical Tcl中环新能源科技股份有限公司
Publication of WO2023185038A1 publication Critical patent/WO2023185038A1/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the present disclosure belongs to the technical field of single crystal manufacturing, and in particular relates to a raw material re-injection device for manufacturing single crystal and a single crystal manufacturing device including the same.
  • the present disclosure provides a raw material re-injection device for manufacturing single crystals to solve at least one of the above problems or other problems existing in the prior art.
  • an external re-injection device for Czochralski single crystal which is located outside the single crystal furnace and includes a storage device and a feeding device.
  • the storage device is connected to the feeding device, and the feeding device.
  • the discharge end is located in the single crystal furnace, and the discharge end of the feeding device can move relative to the single crystal furnace, so that when the material is re-injected, the discharge end of the feeding device is immersed in the silicon solution, and the material is melted and re-injected.
  • the material storage device includes a material storage cylinder and a transportation device.
  • the material storage cylinder corresponds to the transportation device, so that the materials in the storage cylinder fall on the transportation device and are transported to the feeding device under the action of the transportation device.
  • a valve is provided at the discharge end of the storage barrel.
  • the material storage device further includes an installation housing.
  • One end of the installation housing is connected to the barrel, and the other end is connected to the feeding device.
  • the discharge end of the barrel is located inside the installation housing.
  • the transportation device is located at The inside of the installation shell is connected with the feeding device.
  • the transport device is a belt drive structure.
  • the feeding device includes a moving device, a fixed barrel and a movable barrel.
  • the fixed barrel is sleeved on the outside of the movable barrel, the moving device is connected to the movable barrel, and the fixed barrel is located on the side of the single crystal furnace. Externally, under the action of the moving device, the moving barrel can move relative to the fixed barrel, so that the discharge end of the moving device can be immersed in the silicon solution when the material is re-injected.
  • the fixed barrel is provided with a first opening
  • the movable barrel is provided with a second opening
  • the first opening is connected with the second opening
  • the first opening is connected with the material storage device.
  • the length of the second opening is greater than the length of the first opening, and during the movement of the moving barrel, the second opening remains in communication with the first opening.
  • the discharge end of the moving barrel is provided with a plurality of through holes, so that when the discharge end of the moving barrel is immersed in the silicon solution, the silicon solution can enter the moving barrel to melt the material.
  • the moving barrel is made of quartz.
  • the external re-injection device further includes a control device.
  • the control device is connected to the material storage device and the feeding device respectively, and controls the actions of the material storage device and the feeding device.
  • a raw material re-injection device for manufacturing single crystal.
  • the raw material re-injection device includes: a material storage device, which is arranged outside the single crystal furnace; and a feeding device, and a material storage device. Communicated to receive the raw materials transported by the storage device, and has a first discharge end, wherein the first discharge end is located inside the single crystal furnace, and the first discharge end is in the crucible facing the single crystal furnace The direction of the melt is movable.
  • a single crystal manufacturing device includes: a single crystal furnace; and a raw material re-injection device, including: a storage device, which is arranged outside the single crystal furnace; and a feeding device, which is connected to the feeding device to receive the raw materials transported by the feeding device, and has a first discharging end, wherein the first discharging end is located inside the single crystal furnace, and the first discharging end faces the The direction of the melt in the crucible in the single crystal furnace is movable.
  • the raw material re-injection device for single crystal manufacturing has a simple structure and is easy to use. It has a material storage device and a feeding device.
  • the storage device can store and transport materials, and the feeding device can transport materials.
  • the storage device and the feeding device cooperate with each other to achieve continuous supply of materials and avoid waste of man-hours caused by shutdown of the furnace;
  • the discharge end of the feeding device can move up and down relative to the single crystal furnace, and the material enters the feeding device from the storage device and is It is stored in the feeding device, and the discharge end of the feeding device can be immersed in the silicon melt by moving, thereby avoiding the impact of the raw materials on the quartz crucible during the re-injection of raw materials, and preventing the silicon melt from sputtering.
  • Figure 1 is a schematic structural diagram of an external re-injection device for Czochralski single crystal according to an embodiment of the present disclosure
  • Figure 2 is a schematic structural diagram of a material storage device according to an embodiment of the present disclosure
  • FIG. 3 is a schematic structural diagram of a feeding device according to an embodiment of the present disclosure.
  • Figure 4 is a schematic structural diagram of an embodiment of the present disclosure in a chemical state
  • Figure 5 is a schematic structural diagram of a moving barrel according to an embodiment of the present disclosure.
  • Figure 6 is a schematic structural diagram of a fixed barrel according to an embodiment of the present disclosure.
  • Feeding device 301 Storage barrel 302. Valve
  • Transport device 401 Mobile device 402. Fixed barrel
  • the term “re-injection” refers to the process of re-injecting the raw materials used to form the single crystal into the manufacturing equipment during the operation of the single crystal manufacturing equipment.
  • FIG. 1 shows a schematic structural diagram of an embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram of an embodiment of the present disclosure in a chemical state.
  • This embodiment relates to a raw material re-injection device for manufacturing single crystal, and more specifically, to a raw material re-injection device (or external re-injection device) for Czochralski single crystal, which is used in the process of Czochralski single crystal Carry out reinvestment of materials (or raw materials).
  • the raw material re-injection device has a material storage device and a feeding device. The storage device is used to store materials and transport materials to the feeding device.
  • the discharge end of the feeding device can move up and down in the single crystal furnace (that is, move up and down in the direction from the top of the single crystal furnace to the melt in the crucible), and can then be immersed in the silicon melt (or raw material melt)
  • the material is melted in the process to realize the re-injection of the material.
  • the material will first enter and melt in the feeding device instead of directly entering the quartz crucible, thereby reducing the impact on the quartz crucible and avoiding sputtering of the silicon melt.
  • an external re-injection device for Czochralski single crystal is located outside the single crystal furnace 1, which can be used to re-inject materials externally and achieve continuous supply of materials.
  • the external re-injection device includes a material storage device 3 and a feeding device 4 .
  • the stocking device 3 is arranged outside the single crystal furnace 1 and communicates with the feeding device 4 .
  • the feeding device 4 receives the raw materials transported by the storage device 3 and has a first discharging end.
  • the first discharge end is located in the single crystal furnace 1, and the first discharge end of the feeding device 4 can move relative to the single crystal furnace 1, so that the discharge end of the feeding device 4 can be immersed in the silicon melt when the material is re-injected. In the body, the material can be melted and re-injected.
  • the material storage device 3 is opened so that the materials are transported to the feeding device 4 .
  • the discharging end of the feeding device 4 moves relative to the single crystal furnace 1 so that the discharging end of the feeding device 4 moves toward the direction of the silicon melt and is immersed in the silicon melt.
  • the material located at the discharge end of the feeding device 4 is melted and enters the quartz crucible 2, thereby realizing the re-injection of the material.
  • the storage device 3 is installed outside the single crystal furnace 1, the material is transported from the storage device 3 to the feeding device 4, and the first discharge end of the feeding device 4 It is located inside the single crystal furnace 1 to realize the re-injection of materials.
  • Figure 2 is a schematic structural diagram of a material storage device according to an embodiment of the present disclosure.
  • Figure 3 is a schematic structural diagram of a feeding device according to an embodiment of the present disclosure.
  • Figure 5 is a schematic structural diagram of a moving barrel according to an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of a fixed barrel according to an embodiment of the present disclosure.
  • the above-mentioned storage device 3 includes a storage cylinder 301 and a transportation device 303 .
  • the storage cylinder 301 can be fixed on the outside of the single crystal furnace 1 through a mounting bracket, so that the structure of the storage cylinder 301 is stable and does not cause shaking.
  • the fixing method of the cartridge 301 is not limited to this.
  • the storage cylinder 301 has a second discharge end, and the second discharge end is aligned with the transport device 303, so that the materials in the storage cylinder 301 fall onto the transport device 303 through the second discharge end. on, and transported to the feeding device 4 by the transport device 303.
  • the storage cylinder 301 is used to store materials, so that the external re-injection device can continuously re-inject materials to achieve continuous supply of materials.
  • the storage cylinder 301 in order to enable the materials in the storage cylinder 301 to quickly flow out and fall onto the transport device 303, the storage cylinder 301 is arranged vertically, so that the materials in the storage cylinder 301 are placed on the transport device 303. Quickly flows out under the influence of gravity.
  • the transport device 303 is installed below the second discharge end of the storage tube 301 and aligned with the second discharge end, so the materials can directly fall on the transport device 303 .
  • a valve 302 may be provided at the discharge end of the storage barrel 301 to control the opening or closing of the discharge end of the storage barrel 301 .
  • the valve 302 can be further used to control the opening degree of the discharge end of the storage tube 301, thereby controlling the amount of material outflow.
  • the valve 302 is preferably a regulating valve.
  • the transport device 303 may be located below the storage barrel 301 and arranged to be aligned with the second discharge end of the storage barrel 301 .
  • the portion of the transport device 303 that is connected to the materials includes a straight section and an inclined section. After the material flows out of the storage tube 301, it falls on the straight section of the transport device 303. Then, the material moves from the straight section to the inclined section, and enters the feeding device 4 along the inclined section under the action of gravity.
  • the transport device 303 may be a belt drive structure. During the re-throwing of materials, the materials fall on the belt, and the belt runs and drives the materials to move, thereby transporting the materials to the feeding device 4 .
  • the belt portion of the belt transmission structure where the material meets the material includes a straight section and an inclined section. After the material flows out of the storage tube 301, it falls on the straight section of the belt. Then, the belt moves and drives the material to move from the straight section to the inclined section, so that the material falls into the feeding device 4 along the belt of the inclined section under the action of gravity.
  • the material storage device 3 may also include an installation housing. One end of the installation housing is connected to the storage tube 301 , and the other end is connected to the feeding device 4 .
  • the second discharge end of the storage tube 301 is located inside the installation housing, and the transport device 303 is located inside the installation housing.
  • the installation shell is connected with the feeding device 4 .
  • the installation shell plays a protective role and at the same time collects fallen materials. Material dropped from the transport device 303 falls directly inside the installation housing.
  • the installation housing has an internal space and two ports connected to the outside world.
  • One port of the installation shell is fixedly connected to the storage cylinder 301.
  • the discharge end of the storage cylinder 301 and the transport device 303 are both installed inside the installation shell, so that the material is always inside the installation shell during outflow and transportation.
  • the other port of the installation housing is fixedly connected to the feeding device 4, and the installation housing is connected to the feeding device 4.
  • the other port of the installation housing is arranged parallel to the inclined section of the transport device 303 so that the material flowing out from the transport device 303 falls at this port and flows along the port into the feeding device 4 .
  • the above-mentioned feeding device 4 includes a moving device 401 , a fixed barrel 402 and a moving barrel 403 .
  • the fixed barrel 402 is provided outside the single crystal furnace 1 and is sleeved on the outside of the movable barrel 403 .
  • the moving device 401 passes through one end of the fixed barrel 402 and is connected to the moving barrel 403 . Under the action of the moving device 401, the moving barrel 403 can move relative to the fixed barrel 402.
  • the moving barrel 403 moves in the direction of the silicon melt, so that the discharge end 404 of the moving barrel 403 can be immersed in the silicon melt, and then the silicon melt can enter Move the discharge end 404 of the barrel 403 to melt the material.
  • the material can be re-injected, and the material directly enters the moving barrel 403 and is directly melted in the silicon melt, without causing impact on the quartz crucible 2, and the silicon melt will not sputter.
  • the above-mentioned fixed barrel 402 is a tube structure, and the fixed barrel 402 is fixedly connected to the single crystal furnace 1 .
  • the fixed barrel 402 in order to enable the material to move toward the silicon melt direction under the action of its own gravity, the fixed barrel 402 is arranged vertically.
  • the axis of the fixed barrel 402 is parallel to the axis of the single crystal furnace 1 .
  • One end of the fixed barrel 402 is fixedly connected to the single crystal furnace 1 , and the other end is provided with a through hole, so that the mobile device 401 can enter the interior of the fixed barrel 402 through the through hole and connect with the moving barrel 403 .
  • the fixed barrel 402 and the moving device 401 can also be sealed at the through hole to prevent large particles of impurities from entering the fixed barrel 402 and causing damage to the moving barrel 403.
  • the above-mentioned moving barrel 403 is a tube structure.
  • the movable barrel 403 can be disposed inside the fixed barrel 402 and coaxially with the fixed barrel 402 so that the movable barrel 403 can move up and down along the axis of the fixed barrel 402 for re-throwing of materials.
  • One end of the moving barrel 403 is fixedly connected to the moving device 401, and the other end of the moving barrel 403 is located in the single crystal furnace 1 and serves as the discharge end 404.
  • the first discharging end of the feeding device is disposed at the other end of the moving barrel 403 .
  • the first discharging end of the feeding device may be the discharging end 404 of the moving barrel 403 .
  • the discharge end 404 of the moving barrel 403 can There are multiple through holes.
  • the number of through holes can be selected and set according to the diameter of the moving barrel 403, and is not specifically limited here. Multiple through holes are distributed on the bottom wall and peripheral side wall of the discharge end 404 of the moving barrel 403.
  • the multiple through holes may be arranged in multiple rows, or may be arranged in a staggered manner, or in other arrangements.
  • the layout of the through holes can be selected according to actual needs, and there are no specific restrictions here.
  • the diameter of the through hole can be selected and set according to the size of the material, so that the material can be stored at the discharge end 404 of the moving barrel 403 without leaking from the through hole.
  • the structure of the discharge end 404 of the moving barrel 403 according to the embodiment of the present disclosure is not limited thereto.
  • the discharge end 404 of the moving barrel 403 has an open structure, and a mesh structure is provided at this end.
  • the mesh structure is located inside the discharge end 404 of the moving barrel 403 and is fixedly connected to the moving barrel 403 .
  • This fixed connection method is preferably formed in one piece, so that the silicon solution can enter the moving barrel 403 while supporting the material.
  • the fixed barrel 402 is provided with a first opening 406, and the moving barrel 403 is provided with a second opening 405.
  • the first opening 406 communicates with the second opening 405
  • the first opening 406 communicates with the material storage device 3 , so that the material flowing out of the material storage device 3 enters the moving barrel 403 through the first opening 406 and the second opening 405 .
  • the length of the second opening 405 in the moving direction of the moving barrel 403 is greater than the length of the first opening 406 in the moving direction of the moving barrel 403, so that during the movement of the moving barrel 403, the second opening 405 and the first opening 405 are connected to each other.
  • An opening 406 is always connected, that is, materials can always enter the moving barrel 403 through the first opening 406 and the second opening 405 .
  • the lengths of the first opening 406 and the second opening 405 according to the embodiment of the present disclosure are not limited thereto.
  • the lengths of the second opening 405 and the first opening 406 can be selected according to actual needs to ensure that the barrel is moved when the barrel is moving.
  • the first opening 406 and the second opening 405 always remain connected, and materials can still enter the moving barrel 403 when the moving barrel 403 moves.
  • the moving barrel 403 in order to prevent the moving barrel 403 from introducing new impurities during the material melting process when it comes into contact with the silicon solution, thereby avoiding affecting the quality of the drawn single crystal, the moving barrel 403 is formed.
  • Materials may include quartz.
  • the above-mentioned moving device 401 can move the barrel 403 up and down.
  • the moving device 401 is fixedly connected to the outer wall of the single crystal furnace 1.
  • the moving device 401 can be a screw drive, a pneumatic cylinder, or a hydraulic system. Cylinder, or worm gear transmission, or other transmission structure, can be selected and set according to actual needs, and there are no specific restrictions here.
  • the external re-injection device for Czochralski single crystal may also include a control device, which is connected to the stocking device 3 and the feeding device 4 respectively, and is configured to control the stocking device 3 and the feeding device 4 .
  • the action of the feeding device 4, through the cooperative action of the material storage device 3 and the feeding device 4, achieves a dynamic balance between the input of the material and the melting of the material, thereby achieving a continuous supply of the material.
  • the control device is respectively connected to the valve 302, the transport device 303 and the moving device 401 at the discharge end of the storage barrel 301, and controls the opening of the valve 302, the rotation speed of the transport device 303 and the speed of the moving device 401, so that the materials fall evenly on the transport device 303, the transport device 303 transports the materials into the moving barrel 403, and the moving device 401 drives the moving barrel 403 to move up and down.
  • control device is preferably a PLC controller.
  • the control device controls the opening of the valve 302 at the discharge end of the storage cylinder 301, and controls the movement of the transport device 303 to rotate the belt.
  • the material flows out of the storage cylinder 301 and falls on the belt.
  • the rotation of the belt drives the material to move, and the material is moved from the storage cylinder 301 to the belt.
  • the straight section of the belt moves to the inclined section.
  • the material breaks away from the belt under its own gravity and falls on the end of the installation shell connected to the fixed barrel 402.
  • the material moves along the inclined end and moves to the fixed barrel 402.
  • the material enters the moving barrel 403 through the first opening 406 and the second opening 405 and falls on the discharge end 404 of the moving barrel 403 under its own gravity.
  • the moving barrel 403 The discharge end 404 is located above the liquid level of the silicon melt, and the material falls into the moving barrel 403 without falling directly into the silicon melt, thus preventing the silicon melt from sputtering;
  • control device controls the action of the valve 302 to close the valve 302, and controls the transport device 303 to stop;
  • the control device controls the action of the moving device 401.
  • the moving barrel 403 slowly moves in the direction of the silicon melt.
  • the discharge end 404 of the moving barrel 403 is immersed in the silicon melt.
  • the silicon melt flows from the discharge end 404 of the moving barrel 403.
  • Multiple through holes at 403 enter the interior of the moving barrel 403, melt the material, and re-throw the material; during the melting process of the material, the material in the moving barrel 403 moves downward under the action of its own gravity until the moving material Until all the materials in the barrel 403 are melted; or, during the process of melting the materials, the control device controls the action of the valve 302, and the valve 302 opens.
  • control device controls the action of the transportation device 303 to transport the material, and the control device controls the opening of the valve 302.
  • the size and the rotation speed of the transport device 303 match, so that the amount of material entering the moving barrel 403 is roughly consistent with the amount of melted material, achieving a dynamic balance between material placement and melting, and melting while adding material, continuously. Supply of materials.
  • the external re-injection device for Czochralski single crystal has a simple structure and is easy to use. It has a storage device and a feeding device.
  • the storage device can store and transport materials, and the feeding device can transport materials.
  • the transportation, storage device and feeding device cooperate with each other to realize continuous supply of materials and avoid waste of man-hours caused by shutdown of the furnace;
  • the feeding device has a moving barrel, which can move up and down relative to the single crystal furnace, and the material enters through the storage device and stored in the moving barrel.
  • the discharging end of the moving barrel can be immersed in the silicon solution.
  • the discharging end of the moving barrel has multiple through holes through which the silicon solution can enter the moving material.
  • the material storage device has a material storage cylinder and a transportation device. The materials in the cylinder fall directly on the transportation device, which transports the materials to the feeding device, realizing continuous or intermittent feeding during the re-injection process to meet the needs of re-injection.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

一种制造单晶用原料复投装置及包括其的单晶制造装置，原料复投装置设于单晶炉的外部，包括存料装置和送料装置，存料装置与送料装置连通，送料装置的出料端位于单晶炉内，且送料装置的出料端可相对单晶炉移动，以使得进行物料复投时送料装置的出料端浸没于硅溶液中，物料熔化复投。

Description

制造单晶用原料复投装置及包括其的单晶制造装置
相关申请的交叉引用
本申请要求于2022年3月31日在中国国家知识产权局提交的第202220729768.2号中国专利申请的优先权和权益，所述中国专利申请的公开内容通过引用全部包含于此。
技术领域
本公开属于单晶制造技术领域，尤其是涉及一种制造单晶用原料复投装置及包括其的单晶制造装置。
背景技术
传统的直拉硅单晶炉在完成一炉原料拉晶生产后，需为准备新一炉的生产做很多繁杂的前期工作，包括停炉冷却、擦炉、装料、抽真空、化料等工序。这些繁杂的前期工作，浪费了很多时间。虽然可以通过内部的复投装置进行补充硅原料，但是不能大量的补充原料。在投料过程中，还会出现硅溶液溅射现象。
发明内容
鉴于上述问题，本公开提供一种制造单晶用原料复投装置，以解决现有技术存在的以上至少一个问题或者其他问题。
根据本公开的实施例的一方面提供了一种直拉单晶用外置复投装置，设于单晶炉的外部，包括存料装置和送料装置，存料装置与送料装置连通，送料装置的出料端位于单晶炉内，且送料装置的出料端可相对单晶炉移动，以使得进行物料复投时送料装置的出料端浸没于硅溶液中，物料熔化复投。
根据本公开的实施例，存料装置包括存料筒和运输装置，存料筒与运输装置相对应，以使得存料筒中的物料落在运输装置上，并在运输装置的作用下运送至送料装置内，存料筒的出料端处设有阀门。
根据本公开的实施例，存料装置还包括安装壳体，安装壳体的一端与料筒连接，另一端与送料装置连接，料筒的出料端位于安装壳体的内部， 运输装置设于安装壳体的内部，安装壳体与送料装置连通。
根据本公开的实施例，运输装置为皮带传动结构。
根据本公开的实施例，送料装置包括移动装置、固定料筒和移动料筒，固定料筒套设于移动料筒的外部，移动装置与移动料筒连接，固定料筒设于单晶炉的外部，在移动装置的作用下，移动料筒可相对固定料筒移动，以使得移动装置的出料端在物料复投时可浸没于硅溶液中。
根据本公开的实施例，固定料筒设有第一开口，移动料筒设有第二开口，且第一开口与第二开口连通，第一开口与存料装置连通。
根据本公开的实施例，第二开口的长度大于第一开口的长度，在移动料筒移动过程中，第二开口与第一开口保持连通状态。
根据本公开的实施例，移动料筒的出料端设有多个通孔，以使得移动料筒的出料端浸没于硅溶液中时，硅溶液能够进入移动料筒内熔化物料。
根据本公开的实施例，移动料筒的材质为石英。
根据本公开的实施例，外置复投装置还包括控制装置，控制装置分别与存料装置和送料装置连接，控制存料装置和送料装置动作。
根据本公开的实施例的另一方面，提供了一种制造单晶用原料复投装置，原料复投装置包括：存料装置，设置在单晶炉的外部；以及送料装置，与存料装置连通以接收由存料装置输送的原料，并具有第一出料端，其中，第一出料端位于单晶炉的内部，且第一出料端在朝向所述单晶炉中的坩埚内的熔体的方向上是可移动的。
根据本公开的实施例的又一方面，提供了一种单晶制造装置，单晶制造装置包括：单晶炉；以及原料复投装置，包括：存料装置，设置在单晶炉的外部；以及送料装置，与存料装置连通以接收由存料装置输送的原料，并具有第一出料端，其中，第一出料端位于单晶炉的内部，且第一出料端在朝向所述单晶炉中的坩埚内的熔体的方向上是可移动的。
由于采用上述技术方案，该制造单晶用原料复投装置结构简单，使用方便，具有存料装置和送料装置，存料装置能够对物料进行存储，并进行物料的运输，送料装置进行物料的输送，存料装置和送料装置相互配合，可以实现物料连续供给，避免停炉造成工时浪费；送料装置的出料端可相对单晶炉进行上下移动，物料由存料装置进入送料装置内，并在送料装置 内存储，送料装置的出料端通过移动能够浸没于硅熔体中，进而避免在原料复投过程中原料对石英坩埚的冲击，并避免硅熔体发生溅射现象。
本公开的效果不限于在这里阐述的实施例，并且在本说明书中包括更多不同的效果。
附图说明
图1是本公开的一实施例的直拉单晶用外置复投装置的结构示意图；
图2是本公开的一实施例的存料装置的结构示意图；
图3是本公开的一实施例的送料装置的结构示意图；
图4是本公开的一实施例的化料状态时的结构示意图；
图5是本公开的一实施例的移动料筒的结构示意图；
图6是本公开的一实施例的固定料筒的结构示意图。
附图标号说明：
1、单晶炉            2、石英坩埚            3、存料装置
4、送料装置          301、存料筒            302、阀门
303、运输装置        401、移动装置          402、固定料筒
403、移动料筒        404、移动料筒的出料端  405、第二开口
406、第一开口
具体实施方式
现在，将在下文中参照其中示出了本公开的实施例的附图更充分地描述本发明。然而，本公开可以以不同的形式实施，并且不应被解释为限于在此阐述的实施例。相反，提供这些实施例使得本公开将是彻底的和完整的，并且将向本领域的技术人员充分传达发明的范围。
同样的组件将由同样的附图标记表示。此外，应注意的是，仅为了描述方便和清楚，附图可以在组件的厚度、比例和尺寸上夸大。术语“和/或”可以包括相关所列项中的一个或更多个的任何组合和所有组合。
将理解的是，虽然术语“第一”、“第二”等在此可以用来描述各种元件，但是这些元件不应受到这些术语的限制。这些术语仅用于将一个元件与另一元件区分开。例如，在不脱离本公开的教导的情况下，下面讨论的 第一元件可以被命名为第二元件。类似地，第二元件也可以被命名为第一元件。在本公开中，除非上下文另外明确地指出，否则单数形式也旨在包括复数形式。
需要说明的是，在本公开的实施例中，术语“复投”表示在单晶的制造设备运行过程中将用于形成单晶的原料再次投放到制造设备中的过程。
下面，将参照图1和图4对原料复投装置的结构进行描述。图1示出了本公开一实施例的结构示意图，且图4是本公开的一实施例的化料状态时的结构示意图。
本实施例涉及一种制造单晶用原料复投装置，更具体地，涉及一种直拉单晶用原料复投装置(或外置复投装置)，其用于在直拉单晶过程中进行物料(或原料)复投。该原料复投装置具有存料装置和送料装置。存料装置用于存储物料，并进行物料的运输，以将物料运送至送料装置内。送料装置的出料端可以在单晶炉内上下移动(即，沿着从单晶炉的顶部到坩埚内的熔体的方向上下移动)，进而可浸没于硅熔体(或原料熔体)中进行物料的熔化，从而实现物料的复投。此外，在物料复投过程中，物料首先会进入送料装置内并在送料装置内熔化，而不会直接进入石英坩埚内，进而减少对石英坩埚的冲击，避免硅熔体发生溅射。
如图1和图4所示，直拉单晶用外置复投装置设于单晶炉1的外部，其可以用于实现在外部进行物料的复投，且能够实现物料的连续供给。
具体地，外置复投装置包括存料装置3和送料装置4。存料装置3设置在单晶炉1的外部，且与送料装置4连通。送料装置4接收由存料装置3输送的原料，且具有第一出料端。第一出料端位于单晶炉1内，且送料装置4的第一出料端可相对单晶炉1移动，以使得在进行物料复投时送料装置4的出料端可以浸没于硅熔体中，进而实现物料的熔化和复投。
在进行物料复投期间，打开存料装置3，使得物料被运送至送料装置4内。接着，送料装置4的出料端相对单晶炉1移动以使得送料装置4的出料端向硅熔体方向移动并浸没于硅熔体中。在这种情况下，位于送料装置4的出料端处的物料被熔化，并进入石英坩埚2中，进而实现物料的复投。
换言之，在直拉单晶用外置复投装置中，存料装置3安装在单晶炉1的外部，物料由存料装置3输送到送料装置4，且送料装置4的第一出料 端位于单晶炉1内部，进而实现物料的复投。
下面，将参照图1至图6对原料复投装置的结构进行进一步地描述。图2是本公开的一实施例的存料装置的结构示意图，图3是本公开的一实施例的送料装置的结构示意图，图5是本公开的一实施例的移动料筒的结构示意图，并且图6是本公开的一实施例的固定料筒的结构示意图。
如图2所示，上述的存料装置3包括存料筒301和运输装置303。
在本公开的一些实施例中，存料筒301可以通过安装支架固定在单晶炉1的外部，以使得存料筒301结构稳定，不会产生晃动。然而，存料筒301的固定方式并不限于此。
如图2中所示，存料筒301具有第二出料端，第二出料端与运输装置303对准，以使得存料筒301中的物料通过第二出料端落在运输装置303上，并由运输装置303运送至送料装置4内。存料筒301用于物料的存储，以使得该外置复投装置能够连续复投，实现物料的连续供给。
在本公开的一些实施例中，为使得存料筒301内的物料能够快速的流出并落入运输装置303上，该存料筒301竖直设置，以使存料筒301内的物料在自身重力作用下快速流出。运输装置303安装在存料筒301的第二出料端的下方且与第二出料端对准，因此物料可以直接落在运输装置303上。
在本公开的一些实施例中，存料筒301的出料端可以设有阀门302，以控制存料筒301的出料端的打开或关闭。该阀门302可以进一步用于控制存料筒301的出料端的打开程度，进而实现控制物料流出的量。根据本公开的一些实施例，该阀门302优选为调节阀。
此外，根据本公开的实施例不限于上述描述，在不脱离本公开的范围的情况下，可以对存料筒的结构进行各种修改和替换。
如图2中所示，运输装置303可以位于存料筒301下方且设置为与存料筒301的第二出料端对准。在本公开的一些实施例中，为使得物料能够准确进入送料装置4中，该运输装置303的与物料相接处的部分包括平直段和倾斜段。物料从存料筒301内流出后，落在运输装置303的平直段上。然后，物料由平直段移动至倾斜段，并在重力作用下沿着倾斜段落入送料装置4内。
在本公开的一些实施例中，运输装置303可以为皮带传动结构，在物料的复投期间，物料落在皮带上，皮带运转并带动物料移动，进而将物料运送至送料装置4处。在本公开的一些实施例中，为使得物料能够准确进入送料装置4中，该皮带传送结构的与物料相接处的皮带部分包括平直段和倾斜段。物料从存料筒301内流出后，落在皮带的平直段上。然后，皮带移动并带动物料由平直段移动至倾斜段，使得物料在重力作用下沿着倾斜段的皮带落入送料装置4内。
此外，根据本公开的实施例不限于上述描述，在不脱离本公开的范围的情况下，可以对运输装置的结构进行各种修改和替换。
在本公开的一些实施例中，在运输装置303运输物料的过程中，为避免由于物料掉落而造成环境污染，存料装置3还可以包括安装壳体。安装壳体的一端与存料筒301连接，且另一端与送料装置4连接。存料筒301的第二出料端位于安装壳体的内部，并且运输装置303设于安装壳体的内部。安装壳体与送料装置4连通。安装壳体起到防护的作用，同时对掉落的物料进行收集。从运输装置303上掉落的物料直接落在安装壳体的内部。
换言之，该安装壳体具有内部空间，且具有与外界相连通的两个端口。安装壳体的一个端口与存料筒301固定连接，存料筒301的出料端和运输装置303均安装在安装壳体内部，使得物料在流出、运送过程中始终处于安装壳体内部。安装壳体的另一个端口与送料装置4固定连接，且安装壳体与送料装置4连通。安装壳体的所述另一个端口与运输装置303的倾斜段相平行设置，以便于从运输装置303上流出的物料落在该端口处，并沿着该端口流动进入送料装置4内。
如图3所示，上述的送料装置4包括移动装置401、固定料筒402和移动料筒403。
在本公开的一些实施例中，固定料筒402设于单晶炉1的外部且套装于移动料筒403的外部。移动装置401穿过固定料筒402的一端与移动料筒403连接。在移动装置401的作用下，移动料筒403可相对固定料筒402移动。在物料复投期间，在物料进入移动料筒403后，移动料筒403向硅熔体方向移动，使得移动料筒403的出料端404可以浸没于硅熔体中，进而硅熔体可以进入移动料筒403的出料端404内以熔化物料。通过上述技 术方案，可以实现物料的复投，并且物料直接进入移动料筒403内且直接熔化于硅熔体中，不会对石英坩埚2造成冲击，且硅熔体不会发生溅射。
在本公开的一些实施例中，上述的固定料筒402为管结构，固定料筒402与单晶炉1固定连接。在本实施例中，为使得物料能够在自身重力的作用下向硅熔体方向移动，该固定料筒402竖直设置。换言之，固定料筒402的轴线与单晶炉1的轴线相平行。固定料筒402一端与单晶炉1固定连接，另一端设有通孔，以便于移动装置401通过该通孔进入固定料筒402的内部，与移动料筒403连接。此外，固定料筒402与移动装置401在该通孔处还可以进行密封处理，避免大颗粒杂质进入固定料筒402内部，对移动料筒403造成损坏。
在本公开的一些实施例中，上述的移动料筒403为管结构。移动料筒403可以设置在固定料筒402内部，且与固定料筒402同轴设置，以使得移动料筒403能够沿着固定料筒402的轴线方向上下移动，以便进行物料的复投。移动料筒403的一端与移动装置401固定连接，移动料筒403的另一端位于单晶炉1内且为出料端404。在本公开的实施例中，送料装置的第一出料端设置在移动料筒403的所述另一端处，换言之，送料装置的第一出料端可以为移动料筒403的出料端404。
在本公开的一些实施例中，为了在移动料筒403的出料端404浸没于硅溶液中时使硅熔体能够进入移动料筒403内熔化物料，移动料筒403的出料端404可以设有多个通孔。通孔的数量可以根据移动料筒403的直径的大小进行选择设置，这里不做具体限制。多个通孔遍布于移动料筒403的出料端404的底壁和周侧壁上，多个通孔可以呈多排设置，或者，多个通孔交错设置，或者，其他设置方式。通孔的布置可以根据实际需求进行选择，这里不做具体限制。通孔的直径可以根据物料的尺寸进行选择设置，以使得物料能够存放于移动料筒403的出料端404处，而不会从通孔处漏出。
然而，根据本公开的实施例的移动料筒403的出料端404的结构不限于此。可选地，移动料筒403的出料端404为开口结构，在该端设置一网结构，网结构位于移动料筒403的出料端404的内部，且固定连接于移动料筒403。该固定连接方式优选为一体成型，以便对物料进行承托的同时 硅溶液能够进入移动料筒403内。
如图5和图6所示，为使得物料能够进入移动料筒403内，固定料筒402设有第一开口406，且移动料筒403设有第二开口405。第一开口406与第二开口405连通，且第一开口406与存料装置3连通，使得从存料装置3内流出的物料经第一开口406和第二开口405进入移动料筒403内。第二开口405的在移动料筒403的移动方向上的长度大于第一开口406的在移动料筒403的移动方向上的长度，使得在移动料筒403移动过程中，第二开口405与第一开口406始终保持连通状态，即，物料始终能够经由第一开口406和第二开口405进入到移动料筒403内。然而，根据本公开的实施例的第一开口406和第二开口405的长度不限于此，第二开口405的长度与第一开口406的长度可以根据实际需求进行选择，以保证在移动料筒403相对固定料筒402上下移动的过程中第一开口406与第二开口405始终保持连通状态，进而在移动料筒403移动的过程中物料依然能够进入移动料筒403内。
在本公开的一些实施例中，为了避免移动料筒403在与硅溶液接触进行物料熔化过程中不会引入新的杂质，进而避免对拉制的单晶的品质造成影响，形成移动料筒403的材料可以包括石英。
上述的移动装置401能够实现移动料筒403进行上下移动，该移动装置401与单晶炉1的外侧壁固定连接，该移动装置401可以是丝杠传动，也可以是气压缸，也可以是液压缸，或者是蜗轮蜗杆传动，或者是其他传动结构，根据实际需求进行选择设置，这里不做具体限制。
此外，根据本公开的实施例不限于上述描述，在不脱离本公开的范围的情况下，可以对送料装置的各部件的结构进行各种修改和替换。
在本公开的一些实施例中，该直拉单晶用外置复投装置还可以包括控制装置，控制装置分别与存料装置3和送料装置4连接，并被配置为控制存料装置3和送料装置4的动作，通过存料装置3和送料装置4的配合动作，实现物料的输入与物料的熔化呈动态平衡状态，实现物料的持续供给。控制装置分别与存料筒301的出料端的阀门302、运输装置303和移动装置401连接，控制阀门302的开启、运输装置303的转速及移动装置401的速度，使得物料均匀地落在运输装置303上，运输装置303将物料运输 至移动料筒403内，移动装置401带动移动料筒403上下移动。
在本实施例中，该控制装置优选为PLC控制器。
该直拉单晶用外置复投装置在使用时，在存料筒301内装入物料，在需要进行物料复投时，控制装置控制存料筒301的出料端的阀门302、运输装置303和移动装置401进行以下操作：
控制装置控制存料筒301的出料端的阀门302打开，并控制运输装置303动作以使皮带进行转动，物料从存料筒301中流出并落在皮带上，皮带的转动带动物料移动，物料由皮带的平直段移动至倾斜段，物料在自身重力下脱离皮带并落在安装壳体的与固定料筒402连接的一端处，物料沿着倾斜设置的端部移动并移动至固定料筒402的第一开口406处，物料穿过第一开口406和第二开口405进入移动料筒403内并在自身重力作用下落在移动料筒403的出料端404处，此时，移动料筒403的出料端404位于硅熔体的液面上方，物料落在移动料筒403内，而不会直接落入硅熔体中，进而避免硅熔体发生溅射现象；
当移动料筒403填满物料后，控制装置控制阀门302动作以使阀门302关闭，并控制运输装置303停止动作；
控制装置控制移动装置401动作，移动料筒403向硅熔体的方向缓慢移动，移动料筒403的出料端404浸没于硅熔体内，硅熔体从移动料筒403的出料端404处的多个通孔进入移动料筒403的内部，熔化物料，进行物料的复投；在物料熔化的过程中，移动料筒403内的物料在自身重力的作用下向下移动，直至移动料筒403内的物料全部熔化为止；或者，在物料熔化的过程中，控制装置控制阀门302动作，阀门302打开，同时控制装置控制运输装置303动作，进行物料的运输，控制装置控制阀门302的打开大小及运输装置303的转动速度相匹配，以使得进入移动料筒403内的物料的量与熔化的物料的量大致相一致，实现物料的投放与熔化达到动态平衡，边加料边熔化，连续进行物料的供给。
由于采用上述技术方案，该直拉单晶用外置复投装置结构简单，使用方便，具有存料装置和送料装置，存料装置能够对物料进行存储，并进行物料的运输，送料装置进行物料的输送，存料装置和送料装置相互配合，可以实现物料连续供给，避免停炉造成工时浪费；送料装置具有移动料筒， 移动料筒可相对单晶炉进行上下移动，物料由存料装置进入移动料筒内，并在移动料筒内存储，移动料筒的出料端能够浸没于硅溶液中，移动料筒的出料端具有多个通孔，硅溶液能够通过该通孔进入移动料筒内，熔化物料，进行物料的复投，物料不会直接投入石英坩埚内，避免对石英坩埚的冲击，硅溶液不会发生溅射现象；存料装置具有存料筒和运输装置，存料筒内的物料直接落在运输装置上，运输装置将物料运送至送料装置处，实现复投过程中连续供料或间断供料，满足复投的需求。
以上对本公开的实施例进行了详细说明，但所述内容仅为本公开的示例性实施例，不能被认为用于限定本公开。凡依本公开申请范围所作的均等变化与改进等，均应仍归属于本公开的范围之内。

Claims (20)

  1. 一种制造单晶用原料复投装置，所述原料复投装置包括：
    存料装置，设置在单晶炉的外部；以及
    送料装置，与所述存料装置连通以接收由所述存料装置输送的原料，并具有第一出料端，其中，所述第一出料端位于所述单晶炉的内部，且所述第一出料端在朝向所述单晶炉中的坩埚内容纳的熔体的方向上是可移动的。
  2. 根据权利要求1所述的制造单晶用原料复投装置，其中，所述送料装置包括：
    固定料筒，设置于所述单晶炉的外部且连接到所述单晶炉；
    移动料筒，设置于所述固定料筒的内部，其中，所述第一出料端设置于所述移动料筒的一端部处；以及
    移动装置，穿过所述固定料筒并连接到所述移动料筒的另一端部，以控制所述移动料筒相对所述固定料筒移动。
  3. 根据权利要求2所述的制造单晶用原料复投装置，其中，所述固定料筒设有第一开口，所述移动料筒设有第二开口，所述第一开口与所述第二开口连通，并且所述第一开口与所述存料装置连通。
  4. 根据权利要求3所述的制造单晶用原料复投装置，其中，所述第二开口的在所述移动料筒的移动方向上的长度大于所述第一开口的在所述移动料筒的移动方向上的长度，以使得所述第二开口与所述第一开口在所述移动料筒移动过程中保持连通状态。
  5. 根据权利要求2所述的制造单晶用原料复投装置，其中，所 述第一出料端设有多个通孔，以使得在所述第一出料端浸没于所述熔体中时，所述熔体通过所述多个通孔进入所述移动料筒内以熔化原料。
  6. 根据权利要求5所述的制造单晶用原料复投装置，其中，所述多个通孔中的每个通孔具有预定尺寸以防止原料从所述多个通孔漏出。
  7. 根据权利要求2所述的制造单晶用原料复投装置，其中，所述移动料筒的所述一端部具有开口，所述第一出料端具有网状部，且所述网状部设置在所述移动料筒的所述一端部的开口内部并连接到所述移动料筒。
  8. 根据权利要求2所述的制造单晶用原料复投装置，其中，所述第一出料端与所述移动料筒彼此形成为一体。
  9. 根据权利要求2所述的制造单晶用原料复投装置，其中，形成所述移动料筒的材料包括石英。
  10. 根据权利要求1所述的制造单晶用原料复投装置，其中，所述存料装置包括：
    存料筒，具有第二出料端；以及
    运输装置，位于存料筒下方且设置为与所述存料筒的所述第二出料端对准，
    其中，所述存料筒中的原料通过所述第二出料端落在所述运输装置上，并由所述运输装置输送至所述送料装置内，并且所述存料筒的出料端处设有阀门。
  11. 根据权利要求10所述的制造单晶用原料复投装置，其中， 所述存料装置还包括安装壳体，所述安装壳体的一端与所述存料筒连通，另一端与所述送料装置连通，所述存料筒的所述第二出料端和所述运输装置设置于所述安装壳体的内部。
  12. 根据权利要求11所述的制造单晶用原料复投装置，其中，所述运输装置为皮带传动结构。
  13. 根据权利要求1所述的制造单晶用原料复投装置，所述原料复投装置还包括控制装置，所述控制装置分别与所述存料装置和所述送料装置连接，并被配置为控制所述存料装置和所述送料装置的操作。
  14. 一种单晶制造装置，所述单晶制造装置包括：
    单晶炉；以及
    原料复投装置，包括：存料装置，设置在所述单晶炉的外部；以及送料装置，与所述存料装置连通以接收由所述存料装置输送的原料，并具有第一出料端，其中，所述第一出料端位于所述单晶炉的内部，且所述第一出料端在朝向所述单晶炉中的坩埚内的熔体的方向上是可移动的。
  15. 根据权利要求14所述的单晶制造装置，其中，所述送料装置包括：
    固定料筒，设置于所述单晶炉的外部且连接到所述单晶炉；
    移动料筒，设置于所述固定料筒的内部，其中，所述第一出料端设置于所述移动料筒的一端部处；以及
    移动装置，穿过所述固定料筒并连接到所述移动料筒的另一端部，以控制所述移动料筒相对所述固定料筒移动。
  16. 根据权利要求15所述的单晶制造装置，其中，所述第一出料端设有多个通孔，以使得在所述第一出料端浸没于所述熔体中时，所述熔体通过所述多个通孔进入所述移动料筒内以熔化原料。
  17. 根据权利要求16所述的单晶制造装置，其中，所述多个通孔中的每个通孔具有预定尺寸以防止原料从所述多个通孔漏出。
  18. 根据权利要求15所述的单晶制造装置，其中，所述移动料筒的所述一端部具有开口，所述第一出料端具有网状部，且所述网状部设置在所述移动料筒的所述一端部的开口内并连接到所述移动料筒。
  19. 根据权利要求15所述的单晶制造装置，其中，所述第一出料端与所述移动料筒彼此形成为一体。
  20. 根据权利要求14所述的单晶制造装置，其中，所述存料装置包括：
    存料筒，具有第二出料端；以及
    运输装置，位于存料筒下方且设置为与所述存料筒的所述第二出料端对准，
    其中，所述存料筒中的原料通过所述第二出料端落在所述运输装置上，并由所述运输装置输送至所述送料装置内，并且所述存料筒的出料端处设有阀门。
PCT/CN2022/134985 2022-03-31 2022-11-29 制造单晶用原料复投装置及包括其的单晶制造装置 WO2023185038A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202220729768.2 2022-03-31
CN202220729768.2U CN217600905U (zh) 2022-03-31 2022-03-31 一种直拉单晶用外置复投装置

Publications (1)

Publication Number Publication Date
WO2023185038A1 true WO2023185038A1 (zh) 2023-10-05

Family

ID=83565306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/134985 WO2023185038A1 (zh) 2022-03-31 2022-11-29 制造单晶用原料复投装置及包括其的单晶制造装置

Country Status (2)

Country Link
CN (1) CN217600905U (zh)
WO (1) WO2023185038A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN217600905U (zh) * 2022-03-31 2022-10-18 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶用外置复投装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005336020A (ja) * 2004-05-28 2005-12-08 Sumco Corp シリコン単結晶引上装置およびシリコン単結晶の製造方法
JP2006021973A (ja) * 2004-07-09 2006-01-26 Sumco Corp 原料供給装置
CN103451722A (zh) * 2013-08-06 2013-12-18 浙江晶盛机电股份有限公司 能供多炉台共用的外部连续投料装置
CN109306515A (zh) * 2017-07-27 2019-02-05 隆基绿能科技股份有限公司 物料供给装置和晶体生长系统
CN217600905U (zh) * 2022-03-31 2022-10-18 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶用外置复投装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005336020A (ja) * 2004-05-28 2005-12-08 Sumco Corp シリコン単結晶引上装置およびシリコン単結晶の製造方法
JP2006021973A (ja) * 2004-07-09 2006-01-26 Sumco Corp 原料供給装置
CN103451722A (zh) * 2013-08-06 2013-12-18 浙江晶盛机电股份有限公司 能供多炉台共用的外部连续投料装置
CN109306515A (zh) * 2017-07-27 2019-02-05 隆基绿能科技股份有限公司 物料供给装置和晶体生长系统
CN217600905U (zh) * 2022-03-31 2022-10-18 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶用外置复投装置

Also Published As

Publication number Publication date
CN217600905U (zh) 2022-10-18

Similar Documents

Publication Publication Date Title
WO2023185038A1 (zh) 制造单晶用原料复投装置及包括其的单晶制造装置
JPS5919913B2 (ja) 連続式半導体結晶成長装置
CN109306513B (zh) 物料供给装置以及晶体生长系统
CN109306515B (zh) 物料供给装置和晶体生长系统
US8684151B2 (en) Raw material loading apparatus and pipe unit for raw material loading apparatus
CN104947186A (zh) 可移动的多晶铸锭炉二次加料装置
CN109306510A (zh) 物料输送通路、物料供给装置及晶体生长系统
CN109023508B (zh) 单晶炉用新型连续加料装置
WO2023185036A1 (zh) 原料复投装置及包括其的单晶制造装置
CN208414634U (zh) 一种连续单晶提拉装置
CN109306516A (zh) 物料供给装置与晶体生长系统
KR20100046483A (ko) 턴디쉬 플럭스 투입장치
TW201236947A (en) Apparatus for throwing in subject matter, pipe unit for the apparatus, and pipe for use in the pipe unit
CN207435581U (zh) 一种物料供给装置以及晶体生长系统
CN209068971U (zh) 回转窑给料推送装置及回转窑设备
CN115652410A (zh) 一种单晶硅拉制装置及拉制方法
CN210122597U (zh) 加料装置
CN115369477A (zh) 一种晶体生长炉复投送料装置
CN109306514A (zh) 物料供给装置及晶体生长系统
CN210084498U (zh) 一种玄武岩矿粉给料设备
CN208103404U (zh) 一种用于生产电熔砖的自动化加料装置
CN111994659A (zh) 一种多晶硅生产用投料设备
JPH11310491A (ja) 結晶引上装置
CN218019239U (zh) 石膏送料系统
CN220724408U (zh) 加料装置

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 18040136

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22934856

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 523450453

Country of ref document: SA