JP2016509989A5 - - Google Patents
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- Publication number
- JP2016509989A5 JP2016509989A5 JP2015562564A JP2015562564A JP2016509989A5 JP 2016509989 A5 JP2016509989 A5 JP 2016509989A5 JP 2015562564 A JP2015562564 A JP 2015562564A JP 2015562564 A JP2015562564 A JP 2015562564A JP 2016509989 A5 JP2016509989 A5 JP 2016509989A5
- Authority
- JP
- Japan
- Prior art keywords
- dopant
- supply pipe
- supply
- crystal pulling
- supply tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002019 doping agent Substances 0.000 claims description 154
- 239000007789 gas Substances 0.000 claims description 80
- 239000013078 crystal Substances 0.000 claims description 69
- 238000001704 evaporation Methods 0.000 claims description 61
- 230000008020 evaporation Effects 0.000 claims description 59
- 239000000155 melt Substances 0.000 claims description 48
- 239000007787 solid Substances 0.000 claims description 37
- 239000011261 inert gas Substances 0.000 claims description 25
- 239000012530 fluid Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004891 communication Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IT2013/000077 WO2014141309A1 (en) | 2013-03-15 | 2013-03-15 | Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017210841A Division JP6563459B2 (ja) | 2017-10-31 | 2017-10-31 | 半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016509989A JP2016509989A (ja) | 2016-04-04 |
| JP2016509989A5 true JP2016509989A5 (enExample) | 2016-05-19 |
| JP6317374B2 JP6317374B2 (ja) | 2018-04-25 |
Family
ID=48652282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015562564A Active JP6317374B2 (ja) | 2013-03-15 | 2013-03-15 | 半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US20160017513A1 (enExample) |
| JP (1) | JP6317374B2 (enExample) |
| WO (1) | WO2014141309A1 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016142893A1 (en) | 2015-03-10 | 2016-09-15 | Sunedison Semiconductor Limited | Liquid doping systems and methods for controlled doping of a melt |
| JP6597526B2 (ja) * | 2016-09-06 | 2019-10-30 | 株式会社Ｓｕｍｃｏ | 融液導入管及びこれを用いたシリコン単結晶の製造装置 |
| US11028500B2 (en) | 2018-12-14 | 2021-06-08 | Globalwafers Co., Ltd. | Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant |
| SG11202105783YA (en) * | 2018-12-14 | 2021-06-29 | Globalwafers Co Ltd | Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant |
| US11028499B2 (en) | 2018-12-14 | 2021-06-08 | Globalwafers Co., Ltd. | Methods for preparing a doped ingot |
| US11585010B2 (en) * | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
| EP3835463A1 (de) * | 2019-12-13 | 2021-06-16 | Siltronic AG | Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist |
| TW202444981A (zh) | 2020-02-20 | 2024-11-16 | 環球晶圓股份有限公司 | 坩堝模具以及形成套裝坩堝組件之方法 |
| TWI723892B (zh) * | 2020-06-03 | 2021-04-01 | 環球晶圓股份有限公司 | 晶體摻雜裝置 |
| US11795569B2 (en) * | 2020-12-31 | 2023-10-24 | Globalwafers Co., Ltd. | Systems for producing a single crystal silicon ingot using a vaporized dopant |
| EP4060097B1 (de) | 2021-03-16 | 2024-05-01 | Siltronic AG | Vorrichtung und verfahren zur herstellung eines dotierten monokristallinen stabes aus silicium |
| US11866845B2 (en) * | 2022-01-06 | 2024-01-09 | Globalwafers Co., Ltd. | Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control |
| US12037698B2 (en) | 2022-01-06 | 2024-07-16 | Globalwafers Co., Ltd | Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube |
| US12195871B2 (en) * | 2022-10-13 | 2025-01-14 | Globalwafers Co., Ltd. | Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process |
| JP2025534705A (ja) * | 2022-10-13 | 2025-10-17 | グローバルウェーハズ カンパニー リミテッド | 結晶成長プロセス中にガスドーパント気化速度を制御するためのシステムおよび方法 |
| US12221718B2 (en) * | 2022-10-13 | 2025-02-11 | Globalwafers Co., Ltd. | Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process |
| EP4621111A1 (de) | 2024-03-18 | 2025-09-24 | Siltronic AG | Verfahren zum herstellen eines hochdotierten monokristallinen kristalls aus silicium |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2835345B2 (ja) * | 1990-03-22 | 1998-12-14 | 住友シチックス株式会社 | 原料供給方法及びその装置 |
| WO2001086033A1 (en) * | 2000-05-10 | 2001-11-15 | Memc Electronic Materials, Inc. | Method and device for feeding arsenic dopant into a silicon crystal growing process |
| US6312517B1 (en) | 2000-05-11 | 2001-11-06 | Memc Electronic Materials, Inc. | Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method |
| JP4530483B2 (ja) * | 2000-05-31 | 2010-08-25 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Ｃｚ法単結晶引上げ装置 |
| US8409347B2 (en) | 2006-07-20 | 2013-04-02 | Sumco Techxiv Corporation | Method of dopant injection, N-type silicon single-crystal, doping apparatus and pull-up device |
| US10294583B2 (en) * | 2007-04-24 | 2019-05-21 | Sumco Techxiv Corporation | Producing method and apparatus of silicon single crystal, and silicon single crystal ingot |
| JP2010064930A (ja) * | 2008-09-11 | 2010-03-25 | Covalent Materials Corp | シリコン単結晶引上方法およびこれに用いるドーピング装置 |
| JP5462479B2 (ja) * | 2008-12-17 | 2014-04-02 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | シリコン単結晶引上装置 |
| US8535439B2 (en) * | 2009-01-14 | 2013-09-17 | Sumco Techxiv Corporation | Manufacturing method for silicon single crystal |
| JP2011132043A (ja) * | 2009-12-22 | 2011-07-07 | Covalent Materials Corp | シリコン単結晶引上装置及びそれを用いたシリコン単結晶の製造方法 |
| CN103249875B (zh) * | 2010-09-03 | 2016-10-12 | Gtatip控股有限责任公司 | 镓、铟、或铝掺杂单晶硅 |
| JP2012066965A (ja) * | 2010-09-24 | 2012-04-05 | Covalent Materials Corp | シリコン単結晶引上装置 |
| JP2013129551A (ja) * | 2011-12-20 | 2013-07-04 | Shin Etsu Handotai Co Ltd | 単結晶製造装置及び単結晶製造方法 |
| US20140033968A1 (en) | 2012-07-31 | 2014-02-06 | MEMC Electronic Materials S.p.A | Controlled Doping Device For Single Crystal Semiconductor Material and Related Methods |
-
2013
- 2013-03-15 US US14/774,310 patent/US20160017513A1/en not_active Abandoned
- 2013-03-15 JP JP2015562564A patent/JP6317374B2/ja active Active
- 2013-03-15 WO PCT/IT2013/000077 patent/WO2014141309A1/en not_active Ceased
-
2018
- 2018-12-20 US US16/228,235 patent/US10889913B2/en active Active
-
2019
- 2019-07-23 US US16/519,813 patent/US11299819B2/en active Active
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