JP6317374B2 - 半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム - Google Patents

半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム Download PDF

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JP6317374B2
JP6317374B2 JP2015562564A JP2015562564A JP6317374B2 JP 6317374 B2 JP6317374 B2 JP 6317374B2 JP 2015562564 A JP2015562564 A JP 2015562564A JP 2015562564 A JP2015562564 A JP 2015562564A JP 6317374 B2 JP6317374 B2 JP 6317374B2
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dopant
supply
supply pipe
supply tube
gas
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JP2016509989A (ja
JP2016509989A5 (enExample
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ステファン・アリンジェル
ロベルト・スカラ
マルコ・ダンジェラ
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Memc Electronic Materials SpA
MEMC Electronic Materials SpA
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2015562564A 2013-03-15 2013-03-15 半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム Active JP6317374B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IT2013/000077 WO2014141309A1 (en) 2013-03-15 2013-03-15 Gas doping systems for controlled doping of a melt of semiconductor or solar-grade material

Related Child Applications (1)

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JP2017210841A Division JP6563459B2 (ja) 2017-10-31 2017-10-31 半導体グレード材料またはソーラーグレード材料の融液の制御されたドーピングのための気体ドーピングシステム

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JP2016509989A JP2016509989A (ja) 2016-04-04
JP2016509989A5 JP2016509989A5 (enExample) 2016-05-19
JP6317374B2 true JP6317374B2 (ja) 2018-04-25

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US (3) US20160017513A1 (enExample)
JP (1) JP6317374B2 (enExample)
WO (1) WO2014141309A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016142893A1 (en) 2015-03-10 2016-09-15 Sunedison Semiconductor Limited Liquid doping systems and methods for controlled doping of a melt
JP6597526B2 (ja) * 2016-09-06 2019-10-30 株式会社Ｓｕｍｃｏ 融液導入管及びこれを用いたシリコン単結晶の製造装置
US11028500B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
SG11202105783YA (en) * 2018-12-14 2021-06-29 Globalwafers Co Ltd Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
US11028499B2 (en) 2018-12-14 2021-06-08 Globalwafers Co., Ltd. Methods for preparing a doped ingot
US11585010B2 (en) * 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
EP3835463A1 (de) * 2019-12-13 2021-06-16 Siltronic AG Verfahren und vorrichtung zur herstellung eines einkristalls aus silizium, der mit dotierstoff vom n-typ dotiert ist
TW202444981A (zh) 2020-02-20 2024-11-16 環球晶圓股份有限公司 坩堝模具以及形成套裝坩堝組件之方法
TWI723892B (zh) * 2020-06-03 2021-04-01 環球晶圓股份有限公司 晶體摻雜裝置
US11795569B2 (en) * 2020-12-31 2023-10-24 Globalwafers Co., Ltd. Systems for producing a single crystal silicon ingot using a vaporized dopant
EP4060097B1 (de) 2021-03-16 2024-05-01 Siltronic AG Vorrichtung und verfahren zur herstellung eines dotierten monokristallinen stabes aus silicium
US11866845B2 (en) * 2022-01-06 2024-01-09 Globalwafers Co., Ltd. Methods for growing single crystal silicon ingots that involve silicon feed tube inert gas control
US12037698B2 (en) 2022-01-06 2024-07-16 Globalwafers Co., Ltd Ingot puller apparatus having a flange that extends from the funnel or from the silicon feed tube
US12195871B2 (en) * 2022-10-13 2025-01-14 Globalwafers Co., Ltd. Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process
JP2025534705A (ja) * 2022-10-13 2025-10-17 グローバルウェーハズ カンパニー リミテッド 結晶成長プロセス中にガスドーパント気化速度を制御するためのシステムおよび方法
US12221718B2 (en) * 2022-10-13 2025-02-11 Globalwafers Co., Ltd. Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process
EP4621111A1 (de) 2024-03-18 2025-09-24 Siltronic AG Verfahren zum herstellen eines hochdotierten monokristallinen kristalls aus silicium

Family Cites Families (14)

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JP2835345B2 (ja) * 1990-03-22 1998-12-14 住友シチックス株式会社 原料供給方法及びその装置
WO2001086033A1 (en) * 2000-05-10 2001-11-15 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing process
US6312517B1 (en) 2000-05-11 2001-11-06 Memc Electronic Materials, Inc. Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
JP4530483B2 (ja) * 2000-05-31 2010-08-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｃｚ法単結晶引上げ装置
US8409347B2 (en) 2006-07-20 2013-04-02 Sumco Techxiv Corporation Method of dopant injection, N-type silicon single-crystal, doping apparatus and pull-up device
US10294583B2 (en) * 2007-04-24 2019-05-21 Sumco Techxiv Corporation Producing method and apparatus of silicon single crystal, and silicon single crystal ingot
JP2010064930A (ja) * 2008-09-11 2010-03-25 Covalent Materials Corp シリコン単結晶引上方法およびこれに用いるドーピング装置
JP5462479B2 (ja) * 2008-12-17 2014-04-02 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶引上装置
US8535439B2 (en) * 2009-01-14 2013-09-17 Sumco Techxiv Corporation Manufacturing method for silicon single crystal
JP2011132043A (ja) * 2009-12-22 2011-07-07 Covalent Materials Corp シリコン単結晶引上装置及びそれを用いたシリコン単結晶の製造方法
CN103249875B (zh) * 2010-09-03 2016-10-12 Gtatip控股有限责任公司 镓、铟、或铝掺杂单晶硅
JP2012066965A (ja) * 2010-09-24 2012-04-05 Covalent Materials Corp シリコン単結晶引上装置
JP2013129551A (ja) * 2011-12-20 2013-07-04 Shin Etsu Handotai Co Ltd 単結晶製造装置及び単結晶製造方法
US20140033968A1 (en) 2012-07-31 2014-02-06 MEMC Electronic Materials S.p.A Controlled Doping Device For Single Crystal Semiconductor Material and Related Methods

Also Published As

Publication number Publication date
WO2014141309A1 (en) 2014-09-18
US10889913B2 (en) 2021-01-12
US20190119827A1 (en) 2019-04-25
JP2016509989A (ja) 2016-04-04
US20190345629A1 (en) 2019-11-14
US11299819B2 (en) 2022-04-12
US20160017513A1 (en) 2016-01-21

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