JP5158303B2 - 錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 - Google Patents
錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 Download PDFInfo
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- JP5158303B2 JP5158303B2 JP2006111702A JP2006111702A JP5158303B2 JP 5158303 B2 JP5158303 B2 JP 5158303B2 JP 2006111702 A JP2006111702 A JP 2006111702A JP 2006111702 A JP2006111702 A JP 2006111702A JP 5158303 B2 JP5158303 B2 JP 5158303B2
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- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
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- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
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- C25D7/00—Electroplating characterised by the article coated
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- H01L23/495—Lead-frames or other flat leads
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
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Description
(1)錫及び錫合金めっきの下地にニッケルめっきを実施する:ニッケル皮膜が素材の銅とめっきの錫との金属間化合物形成のバリアーとなり、ウィスカの発生を抑える。但し、必要な特性によりニッケルめっきができない部品が多数ある。
(2)錫及び錫合金めっきの膜厚を厚くする(10〜20μm以上):膜厚を厚くすると、金属間化合物の形成により生じた内部応力の影響が表面まで及ばないため、ウィスカの発生が抑制される。但し、電子部品によっては膜厚を厚くできない部品も多い。
(3)錫及び錫合金めっき後の熱処理、リフローの実施:錫及び錫合金めっき後に熱処理、リフローを実施することにより、予め安定な金属間化合物層(Cu3Sn等)を形成させるとともにめっき皮膜の内部応力を緩和し、ウィスカの発生を抑制する。但し、熱処理、リフローにより錫皮膜上に酸化皮膜が形成され、はんだ濡れ性の劣化が生じる。
[1] 水溶性錫塩と、無機酸及び有機酸並びにその水溶性塩から選ばれる1種又は2種以上と、水溶性モリブデン塩から選ばれる1種又は2種以上と、非イオン界面活性剤とを含有することを特徴とする錫電気めっき浴。
[2] pHが1未満であることを特徴とする[1]記載の錫電気めっき浴。
[3] 水溶性錫塩が、アルカンスルホン酸錫(II)又はアルカノールスルホン酸錫(II)であることを特徴とする[1]又は[2]記載の錫電気めっき浴。
[4] 有機酸が、アルカンスルホン酸又はアルカノールスルホン酸であることを特徴とする[1]乃至[3]のいずれかに記載の錫電気めっき浴。
[5] 非イオン界面活性剤が、ポリオキシエチレンアルキルフェニルエーテル型界面活性剤であることを特徴とする[1]乃至[4]のいずれかに記載の錫電気めっき浴。
[6] 更に、チオアミド化合物又は非芳香族チオール化合物を含有することを特徴とする[1]乃至[5]のいずれかに記載の錫電気めっき浴。
[7] チオアミド化合物が、チオ尿素、ジメチルチオ尿素、ジエチルチオ尿素、トリメチルチオ尿素、N,N’−ジイソプロピルチオ尿素、アセチルチオ尿素、アリルチオ尿素、エチレンチオ尿素、二酸化チオ尿素、チオセミカルバジド又はテトラメチルチオ尿素であり、非芳香族チオール化合物が、メルカプト酢酸、メルカプトコハク酸、メルカプト乳酸又はそれらの水溶性塩であることを特徴とする[6]記載の錫電気めっき浴。
[8] [1]乃至[7]のいずれかに記載の錫電気めっき浴を用いて形成した炭素吸蔵量が0.1質量%C以下であることを特徴とする錫めっき皮膜。
[9] [1]乃至[7]のいずれかに記載の錫電気めっき浴を用いて被めっき物をめっきすることを特徴とする錫電気めっき方法。
[10] [1]乃至[7]のいずれかに記載の錫電気めっき浴を用いて錫めっき皮膜を形成した電子機器構成部品。
本発明の錫電気めっき浴は、水溶性錫塩と、無機酸及び有機酸並びにその水溶性塩から選ばれる1種又は2種以上と、水溶性モリブデン塩から選ばれる1種又は2種以上とを含有する。
表1〜3に示す組成の錫めっき浴を調製した。このめっき浴に、常法によって前処理を施したりん青銅(C5191)製リードフレームを浸漬し、これを陰極とし、錫板を陽極として、浴温45℃、表1〜3に示す陰極電流密度でそれぞれ電気錫めっきを施し、膜厚2〜3μmの錫めっき皮膜を形成した。
Claims (10)
- 水溶性錫塩と、無機酸及び有機酸並びにその水溶性塩から選ばれる1種又は2種以上と、水溶性モリブデン塩から選ばれる1種又は2種以上と、非イオン界面活性剤とを含有することを特徴とする錫電気めっき浴。
- pHが1未満であることを特徴とする請求項1記載の錫電気めっき浴。
- 水溶性錫塩が、アルカンスルホン酸錫(II)又はアルカノールスルホン酸錫(II)であることを特徴とする請求項1又は2記載の錫電気めっき浴。
- 有機酸が、アルカンスルホン酸又はアルカノールスルホン酸であることを特徴とする請求項1乃至3のいずれか1項記載の錫電気めっき浴。
- 非イオン界面活性剤が、ポリオキシエチレンアルキルフェニルエーテル型界面活性剤であることを特徴とする請求項1乃至4のいずれか1項記載の錫電気めっき浴。
- 更に、チオアミド化合物又は非芳香族チオール化合物を含有することを特徴とする請求項1乃至5のいずれか1項記載の錫電気めっき浴。
- チオアミド化合物が、チオ尿素、ジメチルチオ尿素、ジエチルチオ尿素、トリメチルチオ尿素、N,N’−ジイソプロピルチオ尿素、アセチルチオ尿素、アリルチオ尿素、エチレンチオ尿素、二酸化チオ尿素、チオセミカルバジド又はテトラメチルチオ尿素であり、非芳香族チオール化合物が、メルカプト酢酸、メルカプトコハク酸、メルカプト乳酸又はそれらの水溶性塩であることを特徴とする請求項6記載の錫電気めっき浴。
- 請求項1乃至7のいずれか1項記載の錫電気めっき浴を用いて形成した炭素吸蔵量が0.1質量%C以下であることを特徴とする錫めっき皮膜。
- 請求項1乃至7のいずれか1項記載の錫電気めっき浴を用いて被めっき物をめっきすることを特徴とする錫電気めっき方法。
- 請求項1乃至7のいずれか1項記載の錫電気めっき浴を用いて錫めっき皮膜を形成した電子機器構成部品。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006111702A JP5158303B2 (ja) | 2006-04-14 | 2006-04-14 | 錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 |
CN2007800134663A CN101421439B (zh) | 2006-04-14 | 2007-04-06 | 锡电镀浴、镀锡膜、锡电镀方法及电子器件元件 |
US12/282,483 US8440066B2 (en) | 2006-04-14 | 2007-04-06 | Tin electroplating bath, tin plating film, tin electroplating method, and electronic device component |
KR1020087022269A KR101361555B1 (ko) | 2006-04-14 | 2007-04-06 | 주석 전기도금욕, 주석 도금 피막, 주석 전기도금 방법 및 전자기기 구성 부품 |
PCT/JP2007/057732 WO2007119691A1 (ja) | 2006-04-14 | 2007-04-06 | 錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 |
DE200711000903 DE112007000903T5 (de) | 2006-04-14 | 2007-04-06 | Zinn-Elektroplattierungsbad, Zinn-plattierter Beschichtungsfilm, Zinn-Elektroplattierungsverfahren, und Bauelement eines elektronischen Geräts |
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JP2006111702A JP5158303B2 (ja) | 2006-04-14 | 2006-04-14 | 錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 |
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JP2007284733A JP2007284733A (ja) | 2007-11-01 |
JP5158303B2 true JP5158303B2 (ja) | 2013-03-06 |
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JP2006111702A Expired - Fee Related JP5158303B2 (ja) | 2006-04-14 | 2006-04-14 | 錫電気めっき浴、錫めっき皮膜、錫電気めっき方法及び電子機器構成部品 |
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US (1) | US8440066B2 (ja) |
JP (1) | JP5158303B2 (ja) |
KR (1) | KR101361555B1 (ja) |
CN (1) | CN101421439B (ja) |
DE (1) | DE112007000903T5 (ja) |
WO (1) | WO2007119691A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008274316A (ja) * | 2007-04-25 | 2008-11-13 | Toyota Motor Corp | めっき部材およびその製造方法 |
JP2010070838A (ja) | 2008-09-22 | 2010-04-02 | Rohm & Haas Electronic Materials Llc | 金属表面処理水溶液および金属表面のウィスカ抑制方法 |
US9080247B2 (en) * | 2009-07-31 | 2015-07-14 | Shinji Dewaki | Tin-containing alloy plating bath, electroplating method using same, and substrate with the electroplating deposited thereon |
JP2011082374A (ja) * | 2009-10-08 | 2011-04-21 | C Uyemura & Co Ltd | 中和還元剤及びデスミア方法 |
JP6006683B2 (ja) * | 2013-06-26 | 2016-10-12 | 株式会社Jcu | スズまたはスズ合金用電気メッキ液およびその用途 |
CN103469264B (zh) * | 2013-09-16 | 2015-10-21 | 中国电子科技集团公司第三十八研究所 | 电镀沉积制备纳米晶结构金锡合金镀层的方法 |
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CN1742118A (zh) * | 2003-01-24 | 2006-03-01 | 石原药品株式会社 | 含锡镀浴 |
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CN101421439A (zh) | 2009-04-29 |
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JP2007284733A (ja) | 2007-11-01 |
US8440066B2 (en) | 2013-05-14 |
CN101421439B (zh) | 2012-11-21 |
WO2007119691A1 (ja) | 2007-10-25 |
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DE112007000903T5 (de) | 2009-02-26 |
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