JP5125505B2 - 露光方法及び露光装置、並びにデバイス製造方法 - Google Patents

露光方法及び露光装置、並びにデバイス製造方法 Download PDF

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Publication number
JP5125505B2
JP5125505B2 JP2007514659A JP2007514659A JP5125505B2 JP 5125505 B2 JP5125505 B2 JP 5125505B2 JP 2007514659 A JP2007514659 A JP 2007514659A JP 2007514659 A JP2007514659 A JP 2007514659A JP 5125505 B2 JP5125505 B2 JP 5125505B2
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Japan
Prior art keywords
liquid
exposure apparatus
exposure
film
wafer
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Expired - Fee Related
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JP2007514659A
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Japanese (ja)
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JPWO2006115186A1 (ja
Inventor
健一 白石
隆一 星加
朋春 藤原
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007514659A 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法 Expired - Fee Related JP5125505B2 (ja)

Priority Applications (1)

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JP2007514659A JP5125505B2 (ja) 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2005127025 2005-04-25
JP2005127025 2005-04-25
JP2005238373 2005-08-19
JP2005238373 2005-08-19
PCT/JP2006/308385 WO2006115186A1 (ja) 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法
JP2007514659A JP5125505B2 (ja) 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法

Related Child Applications (1)

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JP2010173281A Division JP5594646B2 (ja) 2005-04-25 2010-08-02 露光装置及び露光装置の制御方法

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JPWO2006115186A1 JPWO2006115186A1 (ja) 2008-12-18
JP5125505B2 true JP5125505B2 (ja) 2013-01-23

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JP2007514659A Expired - Fee Related JP5125505B2 (ja) 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法
JP2010173281A Expired - Fee Related JP5594646B2 (ja) 2005-04-25 2010-08-02 露光装置及び露光装置の制御方法
JP2012079177A Expired - Fee Related JP5594653B2 (ja) 2005-04-25 2012-03-30 露光方法及び露光装置
JP2013257558A Expired - Fee Related JP5831825B2 (ja) 2005-04-25 2013-12-13 露光装置及び液体供給方法
JP2015092710A Expired - Fee Related JP6249179B2 (ja) 2005-04-25 2015-04-30 露光方法及び露光装置、並びにデバイス製造方法

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JP2010173281A Expired - Fee Related JP5594646B2 (ja) 2005-04-25 2010-08-02 露光装置及び露光装置の制御方法
JP2012079177A Expired - Fee Related JP5594653B2 (ja) 2005-04-25 2012-03-30 露光方法及び露光装置
JP2013257558A Expired - Fee Related JP5831825B2 (ja) 2005-04-25 2013-12-13 露光装置及び液体供給方法
JP2015092710A Expired - Fee Related JP6249179B2 (ja) 2005-04-25 2015-04-30 露光方法及び露光装置、並びにデバイス製造方法

Country Status (5)

Country Link
US (3) US8064039B2 (https=)
EP (1) EP1876635A4 (https=)
JP (5) JP5125505B2 (https=)
KR (3) KR101396620B1 (https=)
WO (1) WO2006115186A1 (https=)

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WO2010103822A1 (ja) 2009-03-10 2010-09-16 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
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WO2011155529A1 (ja) * 2010-06-10 2011-12-15 株式会社ニコン 計測部材、ステージ装置、露光装置、露光方法、及びデバイス製造方法
NL2009899A (en) * 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
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JP6206945B2 (ja) * 2013-03-07 2017-10-04 株式会社ブイ・テクノロジー 走査露光装置及び走査露光方法
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