KR101396620B1 - 노광 방법, 노광 장치, 및 디바이스 제조 방법 - Google Patents

노광 방법, 노광 장치, 및 디바이스 제조 방법 Download PDF

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Publication number
KR101396620B1
KR101396620B1 KR1020077002004A KR20077002004A KR101396620B1 KR 101396620 B1 KR101396620 B1 KR 101396620B1 KR 1020077002004 A KR1020077002004 A KR 1020077002004A KR 20077002004 A KR20077002004 A KR 20077002004A KR 101396620 B1 KR101396620 B1 KR 101396620B1
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South Korea
Prior art keywords
liquid
delete delete
measurement
exposure apparatus
wafer
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Expired - Fee Related
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English (en)
Korean (ko)
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KR20070122442A (ko
Inventor
겐이치 시라이시
류이치 호시카
도모하루 후지와라
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020077002004A 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법 Expired - Fee Related KR101396620B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00127025 2005-04-25
JP2005127025 2005-04-25
JP2005238373 2005-08-19
JPJP-P-2005-00238373 2005-08-19
PCT/JP2006/308385 WO2006115186A1 (ja) 2005-04-25 2006-04-21 露光方法及び露光装置、並びにデバイス製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137000873A Division KR101344142B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20070122442A KR20070122442A (ko) 2007-12-31
KR101396620B1 true KR101396620B1 (ko) 2014-05-16

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KR1020077002004A Expired - Fee Related KR101396620B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법
KR1020137000873A Expired - Fee Related KR101344142B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법
KR1020137021972A Expired - Fee Related KR101466533B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치 및 액체 공급 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020137000873A Expired - Fee Related KR101344142B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치, 및 디바이스 제조 방법
KR1020137021972A Expired - Fee Related KR101466533B1 (ko) 2005-04-25 2006-04-21 노광 방법, 노광 장치 및 액체 공급 방법

Country Status (5)

Country Link
US (3) US8064039B2 (https=)
EP (1) EP1876635A4 (https=)
JP (5) JP5125505B2 (https=)
KR (3) KR101396620B1 (https=)
WO (1) WO2006115186A1 (https=)

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WO2011155529A1 (ja) * 2010-06-10 2011-12-15 株式会社ニコン 計測部材、ステージ装置、露光装置、露光方法、及びデバイス製造方法
NL2009899A (en) * 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
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JP6206945B2 (ja) * 2013-03-07 2017-10-04 株式会社ブイ・テクノロジー 走査露光装置及び走査露光方法
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JP6070784B2 (ja) * 2015-07-14 2017-02-01 株式会社ニコン 液体供給装置、露光装置、液体供給方法、及びデバイス製造方法
JP6811337B2 (ja) * 2017-10-13 2021-01-13 富士フイルム株式会社 透過フィルター及び液浸露光装置
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WO2021094057A1 (en) * 2019-11-14 2021-05-20 Asml Netherlands B.V. Substrate support, lithographic apparatus, method for manipulating charge distribution and method for preparing a substrate

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US20120044469A1 (en) 2012-02-23
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JP2014057103A (ja) 2014-03-27
JP5594653B2 (ja) 2014-09-24
KR101344142B1 (ko) 2013-12-23
US9335639B2 (en) 2016-05-10
JP2012129557A (ja) 2012-07-05
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WO2006115186A1 (ja) 2006-11-02
US20070139632A1 (en) 2007-06-21
KR20130105922A (ko) 2013-09-26
EP1876635A4 (en) 2010-06-30
US20160246184A1 (en) 2016-08-25
KR20130012035A (ko) 2013-01-30
KR101466533B1 (ko) 2014-11-27
JP5594646B2 (ja) 2014-09-24
JPWO2006115186A1 (ja) 2008-12-18
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US9618854B2 (en) 2017-04-11
EP1876635A1 (en) 2008-01-09

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