JP5113982B2 - 金属炭化物粒子が分散した炭素複合材料の製造方法 - Google Patents
金属炭化物粒子が分散した炭素複合材料の製造方法 Download PDFInfo
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Description
第1の発明と同様に、金属源としては、Si、Ti、Zr、Al、W、Cr、Zn金属粒子から選択される一種以上が好ましく例示され、同様に、これらの金属粉末を酸化させて得られるSiO2、TiO2、ZrO2、Al2O3、WO3、CrO3、ZnO粒子から選択される一種以上の金属酸化物粒子又は複合金属酸化物粒子が好ましく例示される。
SiO2 + C → SiO↑ + CO↑ (1)
SiO + 2C → SiC + CO↑ (2)
SiO2 + 3C → SiC + 2CO↑ (3)
の反応であり、in−situで且つ金属酸化物SiO2を用いて金属炭化物SiCを生成させる。
(1)熱硬化性樹脂前駆体溶液にSiO2が単分散した安定なスラリーを用いること。
(2)出発材料として、熱硬化性樹脂前駆体とSiO2と炭素繊維を用いること。
(3)熱硬化性樹脂前駆体から生成する炭素のみとSiO2をin−situに反応させ、SiCを生成させるが、炭素繊維との反応は防止すること。
(4)生成SiCが母相炭素と拡散反応相の生成によって強固に接合していること。
(5)生成SiCが均一に分散していること。
(6)遊離Siを全く含まないSiC/炭素/炭素繊維複合体であること。
図2に、本発明により成形したテストピースの2次電子像を示す。図2中、粒径のものが生成した金属炭化物である。金属酸化物と炭素を反応させて、金属炭化物を生成させる工程において、金属酸化物を凝集させる事なく、金属酸化物粒子の周りには充分な炭素が配置されている事が重要である。従来技術での金属酸化物、炭素共に粉体の場合には、共に紛体であるが故に一部の金属酸化物が凝集する事は避けられないのに対して、本発明では、金属酸化物の粒子と分散剤をフェノール樹脂溶液に配合させる事により、金属酸化物を炭素の中に均一に分散させる事ができた。
1)シリカ:平均粒径3μm粒状物
2)液状フェノール樹脂
を用い、モル比、C:Si=3以上:1になるように、液状のフェノール樹脂の中にシリカを分散剤と共に混入した。本実施例では、モル比C:Si=9:1にて実施した。
フェーノール樹脂を真空装置内で再含浸後、再炭化処理鵬成形物を不活性ガス雰囲気において1650℃で焼成処理を実施した。できたテストピースの粒子の形状を電子顕微鏡にて確認すると同時に、X線回折分析にて炭化珪素である事を確認した。電子顕微鏡写真を図4に示す。
本発明においては、炭素複合材料に含まれるSiCは、焼成処理時においてシリカとカーボンとのin‐situ反応により合成される。このin‐situ反応により合成したSiCとカーボンの界面について、SiCを単に混合して作製したSiC/C/C系複合材料と比較することによりin‐situ反応の効果を確認した。
in‐situ反応によりSiCを生成した試料は、フェノール樹脂に球状シリカ(平均粒径3μm)を混合し、発泡しないように硬化させ、その後、1750℃×2Hrで焼成を行って得た。SiCを混合した試料は、フェノール樹脂にSiC粉末(粒径:2−3μm)を混合し、発泡しないように硬化させ、その後、1750℃×2Hrで焼成を行った。
図5に示したin‐situ反応によりSiCを生成させた試料のTEM像を、再度図7に示す。図8及び図9に、図7に示すA〜D部でのEDX定性分析結果を示す。この結果からA部が生成したSiC、D部がカーボンであることが分かる。EDX定性分析図形では、A部からD部に近づくにつれSiのピーク強度が小さくなっており、B及びC部がin‐situ反応による中間層であることが分かる。また、SiCとカーボンの界面には隙間がなく密着している様子が確認できる。
Claims (9)
- 金属酸化物からなる球状の金属酸化物粒子を熱硬化性樹脂に分散させた混合物スラリーを、炭素繊維に含浸させる含浸工程と、
前記金属酸化物粒子に炭素が被覆されるように、前記熱硬化性樹脂を炭化させる炭化処理工程と、
前記被覆された炭素と前記金属酸化物粒子とからin−situに生成された金属炭化物からなる金属炭化物粉体または金属炭化物粒子が生成されるように焼成する焼成工程と、
を少なくとも含み、
前記焼成工程によりin−situに金属炭化物粉体を生成させた後に、少なくとも1種の金属酸化物粒子を熱硬化性樹脂に分散させた混合物スラリーを、炭素繊維に含浸させ、炭化処理する工程を1度以上繰り返し、
前記金属炭化物粒子を覆うように前記熱硬化樹脂を炭化した炭素が配置され、前記金属炭化物粒子と前記炭素との間に、隙間なく金属炭化物と炭素とからなる層が形成されるように、前記含浸工程及び焼成工程を行うことを特徴とする金属炭化物粒子が分散した炭素複合材料の製造方法。
- 前記金属酸化物粒子が、金属粉末を酸化させて得られるSiO2、TiO2、ZrO2、Al2O3、WO3、CrO3、ZnO粒子から選択される一種以上であることを特徴とする請求項1に記載の炭素複合材料の製造方法。
- 前記金属酸化物粒子がSiO2粒子であり、前記金属炭化物粒子がSiC粒子であることを特徴とする請求項2に記載の炭素複合材料の製造方法。
- 前記金属酸化物粒子がSiO2/ZrO2系の複合金属酸化物粒子であり、前記金属炭化物粒子がSiC/ZrC系複合炭化物粒子であることを特徴とする請求項2に記載の炭素複合材料の製造方法。
- SiO2粒子が、金属シリコンを酸素と反応させて得られる球状シリカ粒子、または破砕シリカを溶融して得られる球状シリカ粒子から選ばれることを特徴とする請求項3に記載の炭素複合材料の製造方法。
- 前記熱硬化性樹脂がフェノール樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、アクリル樹脂、ユリア樹脂、フラン樹脂、ジアリルフタレート樹脂、メラミン樹脂、ポリウレタン、アニリン樹脂から選択される1種以上であることを特徴とする請求項1乃至5のいずれかに記載の炭素複合材料の製造方法。
- 前記含浸工程の後、炭化処理工程の前に、含浸体を積層させ熱圧着させる工程を行うことを特徴とする請求項1乃至6のいずれかに記載の炭素複合材料の製造方法。
- 前記炭化処理が、不活性ガス雰囲気下にて200〜1600℃であることを特徴とする請求項1乃至7のいずれかに記載の炭素複合材料の製造方法。
- 前記焼成が、不活性ガス雰囲気下にて1650℃以上であることを特徴とする請求項1乃至8のいずれかに記載の炭素複合材料の製造方法。
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
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| JP2004128360A JP5113982B2 (ja) | 2004-04-23 | 2004-04-23 | 金属炭化物粒子が分散した炭素複合材料の製造方法 |
| KR1020067024086A KR100818577B1 (ko) | 2004-04-23 | 2005-04-22 | 금속 탄화물 입자가 분산된 탄소 복합 재료 및 그 제조방법 |
| EP05736899.5A EP1748036B1 (en) | 2004-04-23 | 2005-04-22 | Method for producing carbon composite materials comprising metal carbide particles dispersed therein |
| CNB2005800126808A CN100465135C (zh) | 2004-04-23 | 2005-04-22 | 包含分散于其中的金属碳化物颗粒的碳复合材料及其制备方法 |
| US11/587,250 US20070166546A1 (en) | 2004-04-23 | 2005-04-22 | Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same |
| EP10004256A EP2216310A1 (en) | 2004-04-23 | 2005-04-22 | Composite carbon material having metal carbide particles dispersed therein and method for preparation thereof |
| PCT/JP2005/008268 WO2005102961A1 (ja) | 2004-04-23 | 2005-04-22 | 金属炭化物粒子が分散した炭素複合材料及びその製造方法 |
| US12/842,787 US8058197B2 (en) | 2004-04-23 | 2010-07-23 | Carbon composite materials comprising particles of metal carbides dispersed therein and method for producing the same |
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| JP2004128360A JP5113982B2 (ja) | 2004-04-23 | 2004-04-23 | 金属炭化物粒子が分散した炭素複合材料の製造方法 |
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| JP5113982B2 true JP5113982B2 (ja) | 2013-01-09 |
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| US (2) | US20070166546A1 (ja) |
| EP (2) | EP1748036B1 (ja) |
| JP (1) | JP5113982B2 (ja) |
| KR (1) | KR100818577B1 (ja) |
| CN (1) | CN100465135C (ja) |
| WO (1) | WO2005102961A1 (ja) |
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-
2004
- 2004-04-23 JP JP2004128360A patent/JP5113982B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-22 KR KR1020067024086A patent/KR100818577B1/ko not_active Expired - Fee Related
- 2005-04-22 EP EP05736899.5A patent/EP1748036B1/en not_active Ceased
- 2005-04-22 CN CNB2005800126808A patent/CN100465135C/zh not_active Expired - Fee Related
- 2005-04-22 EP EP10004256A patent/EP2216310A1/en not_active Withdrawn
- 2005-04-22 WO PCT/JP2005/008268 patent/WO2005102961A1/ja not_active Ceased
- 2005-04-22 US US11/587,250 patent/US20070166546A1/en not_active Abandoned
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Also Published As
| Publication number | Publication date |
|---|---|
| EP1748036A1 (en) | 2007-01-31 |
| EP2216310A1 (en) | 2010-08-11 |
| WO2005102961A1 (ja) | 2005-11-03 |
| JP2005306688A (ja) | 2005-11-04 |
| EP1748036A4 (en) | 2008-03-12 |
| US20070166546A1 (en) | 2007-07-19 |
| EP1748036B1 (en) | 2017-07-19 |
| US20100292069A1 (en) | 2010-11-18 |
| KR20070012494A (ko) | 2007-01-25 |
| CN1946655A (zh) | 2007-04-11 |
| CN100465135C (zh) | 2009-03-04 |
| KR100818577B1 (ko) | 2008-04-02 |
| US8058197B2 (en) | 2011-11-15 |
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