JP5069452B2 - 二重温度帯を有する静電チャックをもつ基板支持体 - Google Patents

二重温度帯を有する静電チャックをもつ基板支持体 Download PDF

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Publication number
JP5069452B2
JP5069452B2 JP2006314598A JP2006314598A JP5069452B2 JP 5069452 B2 JP5069452 B2 JP 5069452B2 JP 2006314598 A JP2006314598 A JP 2006314598A JP 2006314598 A JP2006314598 A JP 2006314598A JP 5069452 B2 JP5069452 B2 JP 5069452B2
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JP
Japan
Prior art keywords
ceramic
substrate
ceramic pack
pack
heater coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006314598A
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English (en)
Japanese (ja)
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JP2007300057A (ja
Inventor
マティウシュキン アレクサンダー
クーソウ デニス
パナゴポウロス セオドロス
ホーランド ジョン
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2006314598A 2006-04-27 2006-11-21 二重温度帯を有する静電チャックをもつ基板支持体 Expired - Fee Related JP5069452B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US79601306P 2006-04-27 2006-04-27
US60/796013 2006-04-27

Publications (2)

Publication Number Publication Date
JP2007300057A JP2007300057A (ja) 2007-11-15
JP5069452B2 true JP5069452B2 (ja) 2012-11-07

Family

ID=38769279

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006314598A Expired - Fee Related JP5069452B2 (ja) 2006-04-27 2006-11-21 二重温度帯を有する静電チャックをもつ基板支持体
JP2007119297A Expired - Fee Related JP5183092B2 (ja) 2006-04-27 2007-04-27 二重温度帯を有する静電チャックをもつ基板支持体

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2007119297A Expired - Fee Related JP5183092B2 (ja) 2006-04-27 2007-04-27 二重温度帯を有する静電チャックをもつ基板支持体

Country Status (4)

Country Link
JP (2) JP5069452B2 (https=)
KR (2) KR101380879B1 (https=)
CN (4) CN102593031B (https=)
TW (2) TWI357629B (https=)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501605B2 (en) * 2006-08-29 2009-03-10 Lam Research Corporation Method of tuning thermal conductivity of electrostatic chuck support assembly
US9263298B2 (en) 2008-02-27 2016-02-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
JP4913113B2 (ja) * 2008-11-27 2012-04-11 エイ・ディ・ピー・エンジニアリング・コーポレーション・リミテッド 平板表示素子製造装置の下部電極組立体
TW201101414A (en) * 2009-04-24 2011-01-01 Applied Materials Inc Substrate support having side gas outlets and methods
US8270141B2 (en) * 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US8613288B2 (en) 2009-12-18 2013-12-24 Lam Research Ag High temperature chuck and method of using same
JP5267603B2 (ja) * 2010-03-24 2013-08-21 Ｔｏｔｏ株式会社 静電チャック
JP2012028539A (ja) * 2010-07-23 2012-02-09 Ngk Spark Plug Co Ltd セラミックス接合体
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
WO2012118606A2 (en) * 2011-03-01 2012-09-07 Applied Materials, Inc. Thin heated substrate support
JP5961917B2 (ja) * 2011-03-24 2016-08-03 住友電気工業株式会社 ウェハ保持体
KR102103136B1 (ko) * 2011-09-30 2020-04-22 어플라이드 머티어리얼스, 인코포레이티드 온도 제어되는 정전 척
CN102931133B (zh) * 2012-11-12 2016-02-10 中微半导体设备(上海)有限公司 一种改善硅穿孔工艺中刻蚀均匀性的方法
CN103938186B (zh) * 2013-01-23 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 托盘、mocvd反应腔和mocvd设备
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
US9853579B2 (en) * 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck
TWI734668B (zh) * 2014-06-23 2021-08-01 美商應用材料股份有限公司 在ｅｐｉ腔室中的基材熱控制
CN105474381B (zh) * 2014-07-23 2018-06-05 应用材料公司 可调谐温度受控的基板支撑组件
JP6392612B2 (ja) * 2014-09-30 2018-09-19 日本特殊陶業株式会社 静電チャック
JP6463938B2 (ja) * 2014-10-08 2019-02-06 日本特殊陶業株式会社 静電チャック
JP5987966B2 (ja) * 2014-12-10 2016-09-07 Toto株式会社 静電チャックおよびウェーハ処理装置
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
US9888528B2 (en) * 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
JP6124156B2 (ja) * 2015-04-21 2017-05-10 Toto株式会社 静電チャックおよびウェーハ処理装置
US9870934B2 (en) 2015-07-28 2018-01-16 Micron Technology, Inc. Electrostatic chuck and temperature-control method for the same
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
TWI703671B (zh) * 2015-08-06 2020-09-01 美商應用材料股份有限公司 螺接式晶圓夾具熱管理系統及用於晶圓處理系統的方法
JP6937753B2 (ja) * 2015-12-07 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 融合されたカバーリング
US10582570B2 (en) * 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10246777B2 (en) * 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11387134B2 (en) 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
JP6522180B1 (ja) * 2018-02-08 2019-05-29 Ｓｐｐテクノロジーズ株式会社 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法
JP6681522B1 (ja) * 2018-09-13 2020-04-15 日本碍子株式会社 ウエハ載置装置
KR102646838B1 (ko) * 2019-02-05 2024-03-11 어플라이드 머티어리얼스, 인코포레이티드 증착 프로세스들을 위한 마스크의 척킹을 위한 기판 지지부
US11887878B2 (en) * 2019-06-28 2024-01-30 Applied Materials, Inc. Detachable biasable electrostatic chuck for high temperature applications
CN110331386A (zh) * 2019-07-09 2019-10-15 长江存储科技有限责任公司 在半导体晶圆上形成薄膜的方法
JP7390880B2 (ja) * 2019-12-05 2023-12-04 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN111161995B (zh) * 2020-03-07 2025-07-01 江苏先锋精密科技股份有限公司 一种等离子刻蚀机用全封闭式云母加热基座
KR102867189B1 (ko) * 2020-03-31 2025-09-30 어플라이드 머티어리얼스, 인코포레이티드 고온 마이크로-존 정전 척
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
CN111607785A (zh) 2020-05-26 2020-09-01 北京北方华创微电子装备有限公司 一种加热装置及半导体加工设备
TWI748774B (zh) * 2020-12-01 2021-12-01 天虹科技股份有限公司 晶圓承載盤及應用晶圓承載盤的薄膜沉積裝置
CN114959654B (zh) * 2021-02-26 2024-01-09 鑫天虹(厦门)科技有限公司 晶圆承载盘及应用晶圆承载盘的薄膜沉积装置
KR20230107922A (ko) 2022-01-10 2023-07-18 삼성전자주식회사 반도체 장치 제조 장비 및 반도체 장치 제조 방법
TWI884424B (zh) * 2022-02-28 2025-05-21 美商恩特葛瑞斯股份有限公司 具有電荷消散結構之靜電卡盤
KR20250034429A (ko) * 2022-07-11 2025-03-11 어플라이드 머티어리얼스, 인코포레이티드 기판 지지부를 위한 프로세스 키트
JP7614405B1 (ja) * 2023-04-27 2025-01-15 日本碍子株式会社 給電部材及びウエハ載置台

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150839A (ja) * 1985-12-25 1987-07-04 Hitachi Ltd 半導体組立装置
JPH07153822A (ja) * 1993-11-30 1995-06-16 Oki Electric Ind Co Ltd プラズマ処理装置
JPH0945624A (ja) * 1995-07-27 1997-02-14 Tokyo Electron Ltd 枚葉式の熱処理装置
JPH10303286A (ja) * 1997-02-25 1998-11-13 Applied Materials Inc 静電チャック及び半導体製造装置
JP3805134B2 (ja) * 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP2002170753A (ja) * 1999-11-30 2002-06-14 Ibiden Co Ltd 半導体製造・検査用セラミックヒータ
JP4209057B2 (ja) * 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
US6223447B1 (en) * 2000-02-15 2001-05-01 Applied Materials, Inc. Fastening device for a purge ring
US6481886B1 (en) * 2000-02-24 2002-11-19 Applied Materials Inc. Apparatus for measuring pedestal and substrate temperature in a semiconductor wafer processing system
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
JP4697833B2 (ja) * 2000-06-14 2011-06-08 キヤノンアネルバ株式会社 静電吸着機構及び表面処理装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
JP4620879B2 (ja) * 2001-01-23 2011-01-26 キヤノンアネルバ株式会社 基板温度制御機構及び真空処理装置
KR100397891B1 (ko) * 2001-07-25 2003-09-19 삼성전자주식회사 반도체 장치 식각설비의 척 조립체
US6664738B2 (en) * 2002-02-27 2003-12-16 Hitachi, Ltd. Plasma processing apparatus
JP4355159B2 (ja) 2002-04-16 2009-10-28 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
CN2585414Y (zh) * 2002-11-08 2003-11-05 冯自平 具有温度均衡通道的散热器
US7347901B2 (en) * 2002-11-29 2008-03-25 Tokyo Electron Limited Thermally zoned substrate holder assembly
JP2004282047A (ja) 2003-02-25 2004-10-07 Kyocera Corp 静電チャック
EP1458019A3 (de) * 2003-03-13 2005-12-28 VenTec Gesellschaft für Venturekapital und Unternehmensberatung Mobiler transportabler elektrostatischer Substrathalter
US20050042881A1 (en) * 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
US7072165B2 (en) * 2003-08-18 2006-07-04 Axcelis Technologies, Inc. MEMS based multi-polar electrostatic chuck
JP4674792B2 (ja) 2003-12-05 2011-04-20 東京エレクトロン株式会社 静電チャック
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
US7697260B2 (en) * 2004-03-31 2010-04-13 Applied Materials, Inc. Detachable electrostatic chuck
US20060023395A1 (en) * 2004-07-30 2006-02-02 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for temperature control of semiconductor wafers
CN100382275C (zh) * 2004-10-29 2008-04-16 东京毅力科创株式会社 基板载置台、基板处理装置及基板的温度控制方法

Also Published As

Publication number Publication date
TW200809999A (en) 2008-02-16
CN101887865B (zh) 2013-06-19
KR20070105828A (ko) 2007-10-31
CN101887865A (zh) 2010-11-17
JP5183092B2 (ja) 2013-04-17
TW200807606A (en) 2008-02-01
CN101093811A (zh) 2007-12-26
CN101093811B (zh) 2012-04-25
KR101380879B1 (ko) 2014-04-02
TWI463588B (zh) 2014-12-01
JP2007300119A (ja) 2007-11-15
CN102593031B (zh) 2015-09-16
JP2007300057A (ja) 2007-11-15
CN102593031A (zh) 2012-07-18
CN101093812A (zh) 2007-12-26
KR20070105929A (ko) 2007-10-31
TWI357629B (en) 2012-02-01
KR101387598B1 (ko) 2014-04-23

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