TWI357629B - An electrostatic chuck for receiving a substrate i - Google Patents

An electrostatic chuck for receiving a substrate i Download PDF

Info

Publication number
TWI357629B
TWI357629B TW095143403A TW95143403A TWI357629B TW I357629 B TWI357629 B TW I357629B TW 095143403 A TW095143403 A TW 095143403A TW 95143403 A TW95143403 A TW 95143403A TW I357629 B TWI357629 B TW I357629B
Authority
TW
Taiwan
Prior art keywords
substrate
ceramic
electrostatic chuck
disk
ceramic disk
Prior art date
Application number
TW095143403A
Other languages
English (en)
Chinese (zh)
Other versions
TW200809999A (en
Inventor
Alexander Matyushkin
Dennis M Koosau
Theodoros Panagopoulos
John Holland
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=38769279&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI357629(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200809999A publication Critical patent/TW200809999A/zh
Application granted granted Critical
Publication of TWI357629B publication Critical patent/TWI357629B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
TW095143403A 2006-04-27 2006-11-23 An electrostatic chuck for receiving a substrate i TWI357629B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79601306P 2006-04-27 2006-04-27

Publications (2)

Publication Number Publication Date
TW200809999A TW200809999A (en) 2008-02-16
TWI357629B true TWI357629B (en) 2012-02-01

Family

ID=38769279

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095143403A TWI357629B (en) 2006-04-27 2006-11-23 An electrostatic chuck for receiving a substrate i
TW096115185A TWI463588B (zh) 2006-04-27 2007-04-27 具有雙溫度區之靜電夾盤的基材支撐件

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW096115185A TWI463588B (zh) 2006-04-27 2007-04-27 具有雙溫度區之靜電夾盤的基材支撐件

Country Status (4)

Country Link
JP (2) JP5069452B2 (https=)
KR (2) KR101380879B1 (https=)
CN (4) CN102593031B (https=)
TW (2) TWI357629B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
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TWI553774B (zh) * 2015-04-21 2016-10-11 Ｔｏｔｏ股份有限公司 Electrostatic sucker and wafer handling device
US9870934B2 (en) 2015-07-28 2018-01-16 Micron Technology, Inc. Electrostatic chuck and temperature-control method for the same

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US9263298B2 (en) 2008-02-27 2016-02-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
JP4913113B2 (ja) * 2008-11-27 2012-04-11 エイ・ディ・ピー・エンジニアリング・コーポレーション・リミテッド 平板表示素子製造装置の下部電極組立体
TW201101414A (en) * 2009-04-24 2011-01-01 Applied Materials Inc Substrate support having side gas outlets and methods
US8270141B2 (en) * 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
US8613288B2 (en) 2009-12-18 2013-12-24 Lam Research Ag High temperature chuck and method of using same
JP5267603B2 (ja) * 2010-03-24 2013-08-21 Ｔｏｔｏ株式会社 静電チャック
JP2012028539A (ja) * 2010-07-23 2012-02-09 Ngk Spark Plug Co Ltd セラミックス接合体
US9123762B2 (en) 2010-10-22 2015-09-01 Applied Materials, Inc. Substrate support with symmetrical feed structure
WO2012118606A2 (en) * 2011-03-01 2012-09-07 Applied Materials, Inc. Thin heated substrate support
JP5961917B2 (ja) * 2011-03-24 2016-08-03 住友電気工業株式会社 ウェハ保持体
KR102103136B1 (ko) * 2011-09-30 2020-04-22 어플라이드 머티어리얼스, 인코포레이티드 온도 제어되는 정전 척
CN102931133B (zh) * 2012-11-12 2016-02-10 中微半导体设备(上海)有限公司 一种改善硅穿孔工艺中刻蚀均匀性的方法
CN103938186B (zh) * 2013-01-23 2016-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 托盘、mocvd反应腔和mocvd设备
JP6080571B2 (ja) * 2013-01-31 2017-02-15 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
US9853579B2 (en) * 2013-12-18 2017-12-26 Applied Materials, Inc. Rotatable heated electrostatic chuck
TWI734668B (zh) * 2014-06-23 2021-08-01 美商應用材料股份有限公司 在ｅｐｉ腔室中的基材熱控制
CN105474381B (zh) * 2014-07-23 2018-06-05 应用材料公司 可调谐温度受控的基板支撑组件
JP6392612B2 (ja) * 2014-09-30 2018-09-19 日本特殊陶業株式会社 静電チャック
JP6463938B2 (ja) * 2014-10-08 2019-02-06 日本特殊陶業株式会社 静電チャック
JP5987966B2 (ja) * 2014-12-10 2016-09-07 Toto株式会社 静電チャックおよびウェーハ処理装置
US10781518B2 (en) 2014-12-11 2020-09-22 Applied Materials, Inc. Gas cooled electrostatic chuck (ESC) having a gas channel formed therein and coupled to a gas box on both ends of the gas channel
US9888528B2 (en) * 2014-12-31 2018-02-06 Applied Materials, Inc. Substrate support with multiple heating zones
US20160230269A1 (en) * 2015-02-06 2016-08-11 Applied Materials, Inc. Radially outward pad design for electrostatic chuck surface
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
TWI703671B (zh) * 2015-08-06 2020-09-01 美商應用材料股份有限公司 螺接式晶圓夾具熱管理系統及用於晶圓處理系統的方法
JP6937753B2 (ja) * 2015-12-07 2021-09-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 融合されたカバーリング
US10582570B2 (en) * 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10079168B2 (en) * 2016-11-08 2018-09-18 Lam Research Corporation Ceramic electrostatic chuck including embedded Faraday cage for RF delivery and associated methods for operation, monitoring, and control
US10246777B2 (en) * 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
US12293902B2 (en) 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11387134B2 (en) 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
JP6522180B1 (ja) * 2018-02-08 2019-05-29 Ｓｐｐテクノロジーズ株式会社 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法
JP6681522B1 (ja) * 2018-09-13 2020-04-15 日本碍子株式会社 ウエハ載置装置
KR102646838B1 (ko) * 2019-02-05 2024-03-11 어플라이드 머티어리얼스, 인코포레이티드 증착 프로세스들을 위한 마스크의 척킹을 위한 기판 지지부
US11887878B2 (en) * 2019-06-28 2024-01-30 Applied Materials, Inc. Detachable biasable electrostatic chuck for high temperature applications
CN110331386A (zh) * 2019-07-09 2019-10-15 长江存储科技有限责任公司 在半导体晶圆上形成薄膜的方法
JP7390880B2 (ja) * 2019-12-05 2023-12-04 東京エレクトロン株式会社 エッジリング及び基板処理装置
CN111161995B (zh) * 2020-03-07 2025-07-01 江苏先锋精密科技股份有限公司 一种等离子刻蚀机用全封闭式云母加热基座
KR102867189B1 (ko) * 2020-03-31 2025-09-30 어플라이드 머티어리얼스, 인코포레이티드 고온 마이크로-존 정전 척
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
CN111607785A (zh) 2020-05-26 2020-09-01 北京北方华创微电子装备有限公司 一种加热装置及半导体加工设备
TWI748774B (zh) * 2020-12-01 2021-12-01 天虹科技股份有限公司 晶圓承載盤及應用晶圓承載盤的薄膜沉積裝置
CN114959654B (zh) * 2021-02-26 2024-01-09 鑫天虹(厦门)科技有限公司 晶圆承载盘及应用晶圆承载盘的薄膜沉积装置
KR20230107922A (ko) 2022-01-10 2023-07-18 삼성전자주식회사 반도체 장치 제조 장비 및 반도체 장치 제조 방법
TWI884424B (zh) * 2022-02-28 2025-05-21 美商恩特葛瑞斯股份有限公司 具有電荷消散結構之靜電卡盤
KR20250034429A (ko) * 2022-07-11 2025-03-11 어플라이드 머티어리얼스, 인코포레이티드 기판 지지부를 위한 프로세스 키트
JP7614405B1 (ja) * 2023-04-27 2025-01-15 日本碍子株式会社 給電部材及びウエハ載置台

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553774B (zh) * 2015-04-21 2016-10-11 Ｔｏｔｏ股份有限公司 Electrostatic sucker and wafer handling device
US9870934B2 (en) 2015-07-28 2018-01-16 Micron Technology, Inc. Electrostatic chuck and temperature-control method for the same

Also Published As

Publication number Publication date
TW200809999A (en) 2008-02-16
CN101887865B (zh) 2013-06-19
KR20070105828A (ko) 2007-10-31
CN101887865A (zh) 2010-11-17
JP5183092B2 (ja) 2013-04-17
JP5069452B2 (ja) 2012-11-07
TW200807606A (en) 2008-02-01
CN101093811A (zh) 2007-12-26
CN101093811B (zh) 2012-04-25
KR101380879B1 (ko) 2014-04-02
TWI463588B (zh) 2014-12-01
JP2007300119A (ja) 2007-11-15
CN102593031B (zh) 2015-09-16
JP2007300057A (ja) 2007-11-15
CN102593031A (zh) 2012-07-18
CN101093812A (zh) 2007-12-26
KR20070105929A (ko) 2007-10-31
KR101387598B1 (ko) 2014-04-23

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