JP5049467B2 - 薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法 - Google Patents

薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法 Download PDF

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JP5049467B2
JP5049467B2 JP2005087085A JP2005087085A JP5049467B2 JP 5049467 B2 JP5049467 B2 JP 5049467B2 JP 2005087085 A JP2005087085 A JP 2005087085A JP 2005087085 A JP2005087085 A JP 2005087085A JP 5049467 B2 JP5049467 B2 JP 5049467B2
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Japan
Prior art keywords
channel layer
region
crystal
insulating layer
temperature gradient
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JP2005087085A
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Japanese (ja)
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JP2005286330A5 (enExample
JP2005286330A (ja
Inventor
チン−ルン，ティン
チェン−チ，ワン
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Innolux Corp
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Chimei Innolux Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2005087085A 2004-03-26 2005-03-24 薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法 Expired - Fee Related JP5049467B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093108422A TWI240950B (en) 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
TW093108422 2004-03-26

Publications (3)

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JP2005286330A JP2005286330A (ja) 2005-10-13
JP2005286330A5 JP2005286330A5 (enExample) 2008-04-24
JP5049467B2 true JP5049467B2 (ja) 2012-10-17

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JP2005087085A Expired - Fee Related JP5049467B2 (ja) 2004-03-26 2005-03-24 薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法

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Country Link
US (3) US7199399B2 (enExample)
JP (1) JP5049467B2 (enExample)
KR (1) KR101126282B1 (enExample)
TW (1) TWI240950B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
TWI361492B (en) 2008-07-25 2012-04-01 Au Optronics Corp Thin film transistor substrate, electric apparatus, and method for fabricating the same
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US8735207B2 (en) * 2011-04-05 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
KR101980466B1 (ko) * 2015-03-05 2019-05-20 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 삼차원 물체 생성 기법
CN104900713B (zh) * 2015-06-15 2017-12-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板、显示装置
KR102526615B1 (ko) * 2018-09-18 2023-04-27 엘지디스플레이 주식회사 박막 트랜지스터와, 이를 포함하는 기판 내장형 드라이버 및 표시 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066416A (ja) * 1983-09-22 1985-04-16 Matsushita Electric Ind Co Ltd 半導体集積回路基体の製造方法
JPH081892B2 (ja) * 1987-06-03 1996-01-10 松下電子工業株式会社 半導体装置の製造方法
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
JP3969510B2 (ja) * 1998-08-31 2007-09-05 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタアレイ基板および液晶表示装置
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP2001135573A (ja) * 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP2003008024A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及び半導体装置及び表示装置
JP2004063478A (ja) * 2002-04-11 2004-02-26 Fumimasa Yo 薄膜トランジスタ及びその製造方法
AU2003302834A1 (en) * 2002-12-09 2004-06-30 Samsung Electronics Co., Ltd. Display pixel, display apparatus having an image pixel and method of manufacturing display device
JP4593094B2 (ja) * 2003-08-21 2010-12-08 日本電気株式会社 液晶表示装置及びその製造方法

Also Published As

Publication number Publication date
US20070114535A1 (en) 2007-05-24
KR20060044702A (ko) 2006-05-16
TW200532744A (en) 2005-10-01
US20050211985A1 (en) 2005-09-29
US7432140B2 (en) 2008-10-07
US8139175B2 (en) 2012-03-20
TWI240950B (en) 2005-10-01
KR101126282B1 (ko) 2012-03-19
US20080316386A1 (en) 2008-12-25
JP2005286330A (ja) 2005-10-13
US7199399B2 (en) 2007-04-03

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