TWI240950B - Thin film transistor, thin film transistor substrate, and methods for manufacturing the same - Google Patents

Thin film transistor, thin film transistor substrate, and methods for manufacturing the same Download PDF

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Publication number
TWI240950B
TWI240950B TW093108422A TW93108422A TWI240950B TW I240950 B TWI240950 B TW I240950B TW 093108422 A TW093108422 A TW 093108422A TW 93108422 A TW93108422 A TW 93108422A TW I240950 B TWI240950 B TW I240950B
Authority
TW
Taiwan
Prior art keywords
special
channel layer
layer
film transistor
patent application
Prior art date
Application number
TW093108422A
Other languages
English (en)
Chinese (zh)
Other versions
TW200532744A (en
Inventor
Chin-Lung Ting
Cheng-Chi Wang
Original Assignee
Chi Mei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chi Mei Optoelectronics Corp filed Critical Chi Mei Optoelectronics Corp
Priority to TW093108422A priority Critical patent/TWI240950B/zh
Priority to US11/085,420 priority patent/US7199399B2/en
Priority to KR1020050024638A priority patent/KR101126282B1/ko
Priority to JP2005087085A priority patent/JP5049467B2/ja
Application granted granted Critical
Publication of TW200532744A publication Critical patent/TW200532744A/zh
Publication of TWI240950B publication Critical patent/TWI240950B/zh
Priority to US11/623,214 priority patent/US7432140B2/en
Priority to US12/197,416 priority patent/US8139175B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW093108422A 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same TWI240950B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
TW093108422A TWI240950B (en) 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
US11/085,420 US7199399B2 (en) 2004-03-26 2005-03-21 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
KR1020050024638A KR101126282B1 (ko) 2004-03-26 2005-03-24 박막 트랜지스터, 박막 트랜지스터 기판 및 그 제조방법
JP2005087085A JP5049467B2 (ja) 2004-03-26 2005-03-24 薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法
US11/623,214 US7432140B2 (en) 2004-03-26 2007-01-15 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
US12/197,416 US8139175B2 (en) 2004-03-26 2008-08-25 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093108422A TWI240950B (en) 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same

Publications (2)

Publication Number Publication Date
TW200532744A TW200532744A (en) 2005-10-01
TWI240950B true TWI240950B (en) 2005-10-01

Family

ID=34988722

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093108422A TWI240950B (en) 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same

Country Status (4)

Country Link
US (3) US7199399B2 (enExample)
JP (1) JP5049467B2 (enExample)
KR (1) KR101126282B1 (enExample)
TW (1) TWI240950B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745826B2 (en) 2008-07-25 2010-06-29 Au Optronics Corporation Thin film transistor substrate, electronic apparatus, and methods for fabricating the same

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* Cited by examiner, † Cited by third party
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US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US8735207B2 (en) * 2011-04-05 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
KR101980466B1 (ko) * 2015-03-05 2019-05-20 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 삼차원 물체 생성 기법
CN104900713B (zh) * 2015-06-15 2017-12-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板、显示装置
KR102526615B1 (ko) * 2018-09-18 2023-04-27 엘지디스플레이 주식회사 박막 트랜지스터와, 이를 포함하는 기판 내장형 드라이버 및 표시 장치

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JPS6066416A (ja) * 1983-09-22 1985-04-16 Matsushita Electric Ind Co Ltd 半導体集積回路基体の製造方法
JPH081892B2 (ja) * 1987-06-03 1996-01-10 松下電子工業株式会社 半導体装置の製造方法
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
JP3969510B2 (ja) * 1998-08-31 2007-09-05 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタアレイ基板および液晶表示装置
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP2001135573A (ja) * 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP2003008024A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及び半導体装置及び表示装置
JP2004063478A (ja) * 2002-04-11 2004-02-26 Fumimasa Yo 薄膜トランジスタ及びその製造方法
AU2003302834A1 (en) * 2002-12-09 2004-06-30 Samsung Electronics Co., Ltd. Display pixel, display apparatus having an image pixel and method of manufacturing display device
JP4593094B2 (ja) * 2003-08-21 2010-12-08 日本電気株式会社 液晶表示装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7745826B2 (en) 2008-07-25 2010-06-29 Au Optronics Corporation Thin film transistor substrate, electronic apparatus, and methods for fabricating the same

Also Published As

Publication number Publication date
US20070114535A1 (en) 2007-05-24
KR20060044702A (ko) 2006-05-16
TW200532744A (en) 2005-10-01
US20050211985A1 (en) 2005-09-29
US7432140B2 (en) 2008-10-07
US8139175B2 (en) 2012-03-20
JP5049467B2 (ja) 2012-10-17
KR101126282B1 (ko) 2012-03-19
US20080316386A1 (en) 2008-12-25
JP2005286330A (ja) 2005-10-13
US7199399B2 (en) 2007-04-03

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