JP2005532685A5 - - Google Patents

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Publication number
JP2005532685A5
JP2005532685A5 JP2004519093A JP2004519093A JP2005532685A5 JP 2005532685 A5 JP2005532685 A5 JP 2005532685A5 JP 2004519093 A JP2004519093 A JP 2004519093A JP 2004519093 A JP2004519093 A JP 2004519093A JP 2005532685 A5 JP2005532685 A5 JP 2005532685A5
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JP
Japan
Prior art keywords
semiconductor material
electronic device
atoms
tft
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004519093A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005532685A (ja
Filing date
Publication date
Priority claimed from GB0215566A external-priority patent/GB0215566D0/en
Application filed filed Critical
Priority claimed from PCT/IB2003/002883 external-priority patent/WO2004006339A1/en
Publication of JP2005532685A publication Critical patent/JP2005532685A/ja
Publication of JP2005532685A5 publication Critical patent/JP2005532685A5/ja
Pending legal-status Critical Current

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JP2004519093A 2002-07-05 2003-06-25 Ｔｆｔ電子装置とその製造 Pending JP2005532685A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0215566A GB0215566D0 (en) 2002-07-05 2002-07-05 Electronic devices and their manufacture
GB0309977 2003-05-01
PCT/IB2003/002883 WO2004006339A1 (en) 2002-07-05 2003-06-25 Tft electronic devices and their manufacture

Publications (2)

Publication Number Publication Date
JP2005532685A JP2005532685A (ja) 2005-10-27
JP2005532685A5 true JP2005532685A5 (enExample) 2006-08-17

Family

ID=30117094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004519093A Pending JP2005532685A (ja) 2002-07-05 2003-06-25 Ｔｆｔ電子装置とその製造

Country Status (7)

Country Link
US (1) US20060049428A1 (enExample)
EP (1) EP1522104A1 (enExample)
JP (1) JP2005532685A (enExample)
CN (1) CN1666347A (enExample)
AU (1) AU2003244945A1 (enExample)
TW (1) TW200408136A (enExample)
WO (1) WO2004006339A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100928490B1 (ko) * 2003-06-28 2009-11-26 엘지디스플레이 주식회사 액정표시패널 및 그 제조 방법
KR101043338B1 (ko) * 2004-04-19 2011-06-21 삼성전자주식회사 편광자, 이를 갖는 표시장치, 이의 제조방법 및 이의제조장비
KR100613170B1 (ko) * 2004-10-12 2006-08-17 삼성전자주식회사 매트릭스 스위치를 이용한 온도 측정 장치, 반도체 패키지및 냉각 시스템
TWI253759B (en) * 2004-11-22 2006-04-21 Au Optronics Corp Method and apparatus for forming thin film transistor
KR100864884B1 (ko) * 2006-12-28 2008-10-22 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR101282897B1 (ko) * 2008-07-08 2013-07-05 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터 및 그 제조방법
CN102339835A (zh) * 2011-07-14 2012-02-01 友达光电股份有限公司 半导体组件及电致发光组件及其制作方法
TWI476935B (zh) * 2012-10-03 2015-03-11 Nat Applied Res Laboratories 薄膜電晶體製造方法
CN109326676B (zh) * 2017-07-31 2020-12-11 上海耕岩智能科技有限公司 一种光侦测薄膜、器件、显示装置、制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW241377B (enExample) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
JP3535465B2 (ja) * 1993-03-22 2004-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4130237B2 (ja) * 1995-01-28 2008-08-06 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及び半導体装置の作製方法
JP3295346B2 (ja) * 1997-07-14 2002-06-24 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ
JPH11214699A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
JP3454467B2 (ja) * 1999-01-29 2003-10-06 シャープ株式会社 半導体装置およびその製造方法
KR100473997B1 (ko) * 2000-10-06 2005-03-07 엘지.필립스 엘시디 주식회사 박막 트랜지스터 제조방법
JP4678933B2 (ja) * 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

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