TW200408136A - Electronic devices and their manufacture - Google Patents
Electronic devices and their manufacture Download PDFInfo
- Publication number
- TW200408136A TW200408136A TW092118089A TW92118089A TW200408136A TW 200408136 A TW200408136 A TW 200408136A TW 092118089 A TW092118089 A TW 092118089A TW 92118089 A TW92118089 A TW 92118089A TW 200408136 A TW200408136 A TW 200408136A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor material
- tft
- metal
- atoms
- scope
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 73
- 239000000463 material Substances 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 230000008569 process Effects 0.000 claims abstract description 18
- 238000002425 crystallisation Methods 0.000 claims abstract description 15
- 239000011159 matrix material Substances 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 19
- 230000008025 crystallization Effects 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 34
- 230000009467 reduction Effects 0.000 abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 229910052759 nickel Inorganic materials 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005224 laser annealing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- -1 rhyme Chemical compound 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001331845 Equus asinus x caballus Species 0.000 description 1
- 229910015202 MoCr Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229940014144 folate Drugs 0.000 description 1
- OVBPIULPVIDEAO-LBPRGKRZSA-N folic acid Chemical compound C=1N=C2NC(N)=NC(=O)C2=NC=1CNC1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 OVBPIULPVIDEAO-LBPRGKRZSA-N 0.000 description 1
- 235000019152 folic acid Nutrition 0.000 description 1
- 239000011724 folic acid Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QLNWXBAGRTUKKI-UHFFFAOYSA-N metacetamol Chemical compound CC(=O)NC1=CC=CC(O)=C1 QLNWXBAGRTUKKI-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6732—Bottom-gate only TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6745—Polycrystalline or microcrystalline silicon
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0215566A GB0215566D0 (en) | 2002-07-05 | 2002-07-05 | Electronic devices and their manufacture |
| GB0309977 | 2003-05-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200408136A true TW200408136A (en) | 2004-05-16 |
Family
ID=30117094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092118089A TW200408136A (en) | 2002-07-05 | 2003-07-02 | Electronic devices and their manufacture |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20060049428A1 (enExample) |
| EP (1) | EP1522104A1 (enExample) |
| JP (1) | JP2005532685A (enExample) |
| CN (1) | CN1666347A (enExample) |
| AU (1) | AU2003244945A1 (enExample) |
| TW (1) | TW200408136A (enExample) |
| WO (1) | WO2004006339A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI415266B (zh) * | 2008-07-08 | 2013-11-11 | Lg Display Co Ltd | 薄膜電晶體及其製造方法 |
| TWI476935B (zh) * | 2012-10-03 | 2015-03-11 | Nat Applied Res Laboratories | 薄膜電晶體製造方法 |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100928490B1 (ko) * | 2003-06-28 | 2009-11-26 | 엘지디스플레이 주식회사 | 액정표시패널 및 그 제조 방법 |
| KR101043338B1 (ko) * | 2004-04-19 | 2011-06-21 | 삼성전자주식회사 | 편광자, 이를 갖는 표시장치, 이의 제조방법 및 이의제조장비 |
| KR100613170B1 (ko) * | 2004-10-12 | 2006-08-17 | 삼성전자주식회사 | 매트릭스 스위치를 이용한 온도 측정 장치, 반도체 패키지및 냉각 시스템 |
| TWI253759B (en) * | 2004-11-22 | 2006-04-21 | Au Optronics Corp | Method and apparatus for forming thin film transistor |
| KR100864884B1 (ko) * | 2006-12-28 | 2008-10-22 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치 |
| CN102339835A (zh) * | 2011-07-14 | 2012-02-01 | 友达光电股份有限公司 | 半导体组件及电致发光组件及其制作方法 |
| CN109326676B (zh) * | 2017-07-31 | 2020-12-11 | 上海耕岩智能科技有限公司 | 一种光侦测薄膜、器件、显示装置、制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW241377B (enExample) * | 1993-03-12 | 1995-02-21 | Semiconductor Energy Res Co Ltd | |
| CN1095204C (zh) * | 1993-03-12 | 2002-11-27 | 株式会社半导体能源研究所 | 半导体器件和晶体管 |
| JP3535465B2 (ja) * | 1993-03-22 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2762215B2 (ja) * | 1993-08-12 | 1998-06-04 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタおよび半導体装置の作製方法 |
| JP2814049B2 (ja) * | 1993-08-27 | 1998-10-22 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP3378078B2 (ja) * | 1994-02-23 | 2003-02-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4130237B2 (ja) * | 1995-01-28 | 2008-08-06 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及び半導体装置の作製方法 |
| JP3295346B2 (ja) * | 1997-07-14 | 2002-06-24 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
| JPH11214699A (ja) * | 1998-01-23 | 1999-08-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US6346437B1 (en) * | 1998-07-16 | 2002-02-12 | Sharp Laboratories Of America, Inc. | Single crystal TFT from continuous transition metal delivery method |
| JP3454467B2 (ja) * | 1999-01-29 | 2003-10-06 | シャープ株式会社 | 半導体装置およびその製造方法 |
| KR100473997B1 (ko) * | 2000-10-06 | 2005-03-07 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 제조방법 |
| JP4678933B2 (ja) * | 2000-11-07 | 2011-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2002
- 2002-06-25 US US10/520,229 patent/US20060049428A1/en not_active Abandoned
-
2003
- 2003-06-25 WO PCT/IB2003/002883 patent/WO2004006339A1/en not_active Ceased
- 2003-06-25 JP JP2004519093A patent/JP2005532685A/ja active Pending
- 2003-06-25 CN CN03815752.7A patent/CN1666347A/zh active Pending
- 2003-06-25 EP EP03738419A patent/EP1522104A1/en not_active Withdrawn
- 2003-06-25 AU AU2003244945A patent/AU2003244945A1/en not_active Abandoned
- 2003-07-02 TW TW092118089A patent/TW200408136A/zh unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI415266B (zh) * | 2008-07-08 | 2013-11-11 | Lg Display Co Ltd | 薄膜電晶體及其製造方法 |
| TWI476935B (zh) * | 2012-10-03 | 2015-03-11 | Nat Applied Res Laboratories | 薄膜電晶體製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003244945A1 (en) | 2004-01-23 |
| JP2005532685A (ja) | 2005-10-27 |
| CN1666347A (zh) | 2005-09-07 |
| EP1522104A1 (en) | 2005-04-13 |
| WO2004006339A1 (en) | 2004-01-15 |
| US20060049428A1 (en) | 2006-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3713232B2 (ja) | 結晶質シリコン活性層を含む薄膜トランジスタの製造方法 | |
| JPH10135137A (ja) | 結晶性半導体作製方法 | |
| JPH11354445A (ja) | 半導体装置 | |
| CN102082077B (zh) | 制造多晶硅层的方法、薄膜晶体管、显示装置及制造方法 | |
| CN1097298C (zh) | 制造结晶硅半导体和薄膜晶体管的方法 | |
| JPH10229048A (ja) | 半導体装置の作製方法 | |
| TWI322446B (en) | Mask for polycrystallization and method of manufacturing thin film transistor using polycrystallization mask | |
| TW201220362A (en) | Method of crystallizing silicon layer and method of forming a thin film transistor using the same | |
| US11362216B2 (en) | Active device substrate and manufacturing method thereof | |
| TW200924067A (en) | Methods of fabricating crystalline silicon, thin film transistors, and solar cells | |
| JP2001094109A (ja) | 半導体装置およびその製造方法 | |
| JP3910229B2 (ja) | 半導体薄膜の作製方法 | |
| TWI527087B (zh) | 多晶矽層、備製多晶矽層之方法、使用多晶矽層之薄膜電晶體及包含該薄膜電晶體之有機發光顯示裝置 | |
| JP2002280391A (ja) | ＴＦＴのためのＳｉ層の金属誘起による自己整合結晶化を用いる半導体デバイス、トップ・ゲート形ＴＦＴおよび該トップ・ゲート形ＴＦＴの製造方法 | |
| TW200423407A (en) | Fabricating method of low temperature poly-silicon film and low temperature poly-silicon thin film transistor | |
| TW200408136A (en) | Electronic devices and their manufacture | |
| TW201214568A (en) | Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor | |
| US8716112B2 (en) | Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same | |
| KR100252926B1 (ko) | 실리사이드를 이용한 폴리실리콘 박막트랜지스터 및 제조방법 | |
| KR100504538B1 (ko) | 비정질 실리콘의 결정화 방법 및 이를 이용한액정표시장치의제조방법 | |
| JP4115590B2 (ja) | 半導体装置の作製方法 | |
| KR101274697B1 (ko) | 실리콘 결정화 방법 및 이를 이용한 박막 트랜지스터제조방법 | |
| KR101333797B1 (ko) | 실리사이드 씨드 유도 측면 결정화를 이용한 비정질 실리콘 박막의 결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의 제조방법 | |
| JP4602155B2 (ja) | 半導体装置の作製方法 | |
| JP3585534B2 (ja) | 半導体装置の作製方法 |