CN1666347A - 薄膜晶体管电子器件及其制造 - Google Patents

薄膜晶体管电子器件及其制造 Download PDF

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Publication number
CN1666347A
CN1666347A CN03815752.7A CN03815752A CN1666347A CN 1666347 A CN1666347 A CN 1666347A CN 03815752 A CN03815752 A CN 03815752A CN 1666347 A CN1666347 A CN 1666347A
Authority
CN
China
Prior art keywords
semiconductor material
atoms
metal atoms
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03815752.7A
Other languages
English (en)
Chinese (zh)
Inventor
P·J·范德扎格
N·D·杨
I·D·弗伦奇
J·A·查普曼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TPO Hong Kong Holding Ltd
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0215566A external-priority patent/GB0215566D0/en
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN1666347A publication Critical patent/CN1666347A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Thin Film Transistor (AREA)
CN03815752.7A 2002-07-05 2003-06-25 薄膜晶体管电子器件及其制造 Pending CN1666347A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB0215566.1 2002-07-05
GB0215566A GB0215566D0 (en) 2002-07-05 2002-07-05 Electronic devices and their manufacture
GB0309977.7 2003-05-01
GB0309977 2003-05-01

Publications (1)

Publication Number Publication Date
CN1666347A true CN1666347A (zh) 2005-09-07

Family

ID=30117094

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03815752.7A Pending CN1666347A (zh) 2002-07-05 2003-06-25 薄膜晶体管电子器件及其制造

Country Status (7)

Country Link
US (1) US20060049428A1 (enExample)
EP (1) EP1522104A1 (enExample)
JP (1) JP2005532685A (enExample)
CN (1) CN1666347A (enExample)
AU (1) AU2003244945A1 (enExample)
TW (1) TW200408136A (enExample)
WO (1) WO2004006339A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102496621A (zh) * 2011-07-14 2012-06-13 友达光电股份有限公司 半导体组件及电致发光组件及其制作方法
CN109326676A (zh) * 2017-07-31 2019-02-12 上海耕岩智能科技有限公司 一种光侦测薄膜、器件、显示装置、制备方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100928490B1 (ko) * 2003-06-28 2009-11-26 엘지디스플레이 주식회사 액정표시패널 및 그 제조 방법
KR101043338B1 (ko) * 2004-04-19 2011-06-21 삼성전자주식회사 편광자, 이를 갖는 표시장치, 이의 제조방법 및 이의제조장비
KR100613170B1 (ko) * 2004-10-12 2006-08-17 삼성전자주식회사 매트릭스 스위치를 이용한 온도 측정 장치, 반도체 패키지및 냉각 시스템
TWI253759B (en) * 2004-11-22 2006-04-21 Au Optronics Corp Method and apparatus for forming thin film transistor
KR100864884B1 (ko) * 2006-12-28 2008-10-22 삼성에스디아이 주식회사 박막트랜지스터, 그의 제조방법 및 이를 구비한유기전계발광표시장치
KR101282897B1 (ko) * 2008-07-08 2013-07-05 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터 및 그 제조방법
TWI476935B (zh) * 2012-10-03 2015-03-11 Nat Applied Res Laboratories 薄膜電晶體製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW241377B (enExample) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
JP3535465B2 (ja) * 1993-03-22 2004-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4130237B2 (ja) * 1995-01-28 2008-08-06 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及び半導体装置の作製方法
JP3295346B2 (ja) * 1997-07-14 2002-06-24 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ
JPH11214699A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
JP3454467B2 (ja) * 1999-01-29 2003-10-06 シャープ株式会社 半導体装置およびその製造方法
KR100473997B1 (ko) * 2000-10-06 2005-03-07 엘지.필립스 엘시디 주식회사 박막 트랜지스터 제조방법
JP4678933B2 (ja) * 2000-11-07 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102496621A (zh) * 2011-07-14 2012-06-13 友达光电股份有限公司 半导体组件及电致发光组件及其制作方法
CN102496621B (zh) * 2011-07-14 2014-09-17 友达光电股份有限公司 半导体组件及电致发光组件及其制作方法
CN109326676A (zh) * 2017-07-31 2019-02-12 上海耕岩智能科技有限公司 一种光侦测薄膜、器件、显示装置、制备方法

Also Published As

Publication number Publication date
AU2003244945A1 (en) 2004-01-23
JP2005532685A (ja) 2005-10-27
EP1522104A1 (en) 2005-04-13
WO2004006339A1 (en) 2004-01-15
TW200408136A (en) 2004-05-16
US20060049428A1 (en) 2006-03-09

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C06 Publication
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SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: TONGBAO HONG KONG CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20070309

C41 Transfer of patent application or patent right or utility model
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Effective date of registration: 20070309

Address after: Floor two, PHILPS tower, 5 East Science Avenue, Sha Tin, Hongkong Science Park, Hongkong

Applicant after: Tpo Hong Kong Holding Ltd.

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication