CN109326676A - 一种光侦测薄膜、器件、显示装置、制备方法 - Google Patents
一种光侦测薄膜、器件、显示装置、制备方法 Download PDFInfo
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- CN109326676A CN109326676A CN201710640248.8A CN201710640248A CN109326676A CN 109326676 A CN109326676 A CN 109326676A CN 201710640248 A CN201710640248 A CN 201710640248A CN 109326676 A CN109326676 A CN 109326676A
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- Light Receiving Elements (AREA)
Abstract
本发明提供了一种光侦测薄膜、器件、显示装置、制备方法,相较于一般采用TFT漏电流作光敏薄膜晶体管之器件,本发明以倒立共平面型场效晶体管结构将光吸收半导体层配置于最上方,大幅增加了光电子的激发。配置于底层的源极与漏极,在每一个侦测像素里,所属同一像素的多个源极都相互并联,且所属同一像素的多个漏极也都相互并联,进而降低了光激发之电子与空穴再复合机率,增加了场效应作用下电极收集光电子的成功机率,最大化地改善了TFT漏电流光敏薄膜晶体管的光敏感度。本发明无需掺杂含硼气体即可实现,有效减少了光侦测薄膜生产过程中对环境的污染,降低了生产成本。
Description
技术领域
本发明涉及光学器件领域领域,特别涉及一种光侦测薄膜、器件、显示装置、制备方法。
背景技术
液晶显示(LCD)屏或有源阵列式有机发光二极管(AMOLED)显示屏,皆是以薄膜电晶管(TFT)结构扫描并驱动单一画素,以实现屏上画素阵列之显示功能。形成TFT开关功能的主要结构为半导体场效晶体管(FET),其中熟知的半导体层主要材料有非晶硅、多晶硅、氧化铟镓锌(IGZO)、或是混有碳纳米材料之有机化合物等等。由于光侦测二极管(PhotoDiode)的结构亦可采用此类半导体材料制备,且生产设备也兼容于TFT阵列的生产设备,因此近年来TFT驱动与扫描的光侦测二极管开始以TFT阵列制备方式作生产,并广泛应用在X光感测平板器件,如中华人民共和国专利CN103829959B、CN102903721B所描述。
实际上在光侦测的应用上,TFT结构即具备光敏功能的特性:一般藉由栅极电压控制TFT操作在关闭状态时,源极到漏极之间不会有电流通过;然而当TFT受光源照射时,由于光的能量在半导体激发出电子-空穴对,TFT结构的场效应作用会使电子-空穴对分离,进而使TFT产生漏电流。这样的漏电流特性让TFT阵列逐渐被应用在光侦测或光侦测之技术上,例如中华人民共和国专利CN100568072C、CN105044952A所描述。若将此类熟知的TFT可见光感测阵列薄膜配置在显示屏结构内,可作为将光侦测功能集成在显示屏之一种实现方案。
然而传统的TFT器件结构设计在光侦测应用上,仍有必须要改善的特性:正常环境光的照明可能包含从最暗区域到最亮区域的3个数量级以上(60dB)的变化,使用操作在关闭区的TFT漏电流进行光侦测应用,需要增加TFT的光敏感度(photosensitivity)、提高器件的信号噪声比(SNR),并避免增加了整体系统的复杂性以及功耗。除此之外,如果将TFT阵列薄膜应用作显示屏内的影像传感器件,受限于显示屏的厚度以及显示画素开口孔径等问题,TFT阵列感测之真实影像已是发生绕射等光学失真之影像,且因光学信号穿透显示屏多层结构,并且在光学显示信号、触摸感测信号并存的情况下,欲从低信噪比场景提取有用光学信号具备很高的困难度,技术困难等级达到近乎单光子成像之程度,必须需藉由算法依光波理论运算重建方能解析出原始影像。为了避开此一技术难点,熟知将可见光传感器薄膜配置在原显示屏结构内会需要额外的光学增强器件,或是仅将光传感器薄膜配置在显示屏侧边内,利用非垂直反射到达侧边之光线进行光影像重建,例如:中华人民共和国专利CN101359369B所述。然而虽然此类技术可避开了弱光成像的技术难点,额外的光学器件增加了光侦测显视屏的厚度,在显视屏侧边的配置方式也无法满足用户的全屏体验。
在实际应用过程中,可以采用一层p型/i型/n型结构作为光侦测薄膜的光敏薄膜晶体管,以实现光侦测功能。对于p型/i型/n型结构,光吸收半导体层要求掺杂含硼气体,生产工艺流程较为复杂。且硼为重污染气体,加工生产过程中容易对环境造成污染,增加环境治理成本。
发明内容
为此,需要提供一种光侦测的技术方案,用于解决现有的光侦测薄膜存在的光电转化率低、易污染、工艺复杂、成本高等问题。
为实现上述目的,发明人提供了一种光侦测薄膜,所述光侦测薄膜包括光敏薄膜晶体管,所述光敏薄膜晶体管包括栅极、源极、漏极、绝缘层、光吸收半导体层;所述光敏薄膜晶体管为倒立共平面式结构,所述倒立共平面式结构包括:所述栅极、绝缘层、源极纵向自下而上设置,所述漏极与所述源极横向共面设置;绝缘层包裹所述栅极,以使得栅极与源极、栅极与漏极之间均不接触;源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道,所述光吸收半导体层设置于光敏漏电流通道内。
进一步地,所述源极和漏极的数量均为多个,源极和源极之间相互并联,漏极和漏极之间相互并联;所述“源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道”包括:相邻的源极之间形成第一间隙,一个漏极置于所述第一间隙内,相邻的漏极之间形成第二间隙,一个源极置于所述第二间隙内,源极和漏极之间交错设置且间隙配合。
进一步地,所述光吸收半导体层为未作掺杂的本质非晶硅结构,所述非晶硅结构乃是由硅烷与氢气通过化学气相沉积成膜的半导体层,非晶硅结构的结晶度小于40%,且其禁带宽度1.7eV~1.8eV。
进一步地,所述光吸收半导体层为未作掺杂的本质微晶硅结构,所述微晶硅结构乃是由硅烷与氢气通过化学气相沉积成膜的半导体层,微晶硅的结构的结晶度大于40%,且其禁带宽度小于1.7eV。
进一步地,所述光吸收半导体层为非结晶硅化锗结构,所述非结晶硅化锗结构为硅烷、氢气与锗烷通过化学气相沉积成膜的非结晶半导体层,且其禁带宽度小于1.7eV。
进一步地,所述源极与漏极皆是由自上而下为n型掺杂半导体层与金属层所形成的结构,所述n型掺杂半导体层是指其结构为硅烷、氢气与磷化氢通过化学气相沉积成膜的半导体层。
进一步地,所述光吸收半导体层的上端面设置有绝缘保护层。
进一步地,在所述绝缘保护层上端面设置有一光学器件,所述光学器件用于降低光线在光吸收半导体层的上端面的反射率、或是减小光线在光吸收半导体层的折射角度以增加光入射量。
进一步地,所述光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构,且所述光学器件的折射率小于光吸收半导体层的折射率。
进一步地,所述光学器件是采用化学汽相沉积或溅射镀膜方式将氧化物及其衍生化合物或氮化物及其衍生化合物制备成膜。
进一步地,所述氧化物及其衍生化合物包括:氧化硅(SiOX)、五氧化二铌(Nb2O5)、氧化锌(ZnO)、氧化铟锡(ITO)、氧化钛(TiO2);所述氮化物及其衍生化合物包括:氮化硅(SiNX)。
发明人还提供了一种光侦测器件,所述光侦测器件包括MxN个像素侦测区,每一像素侦测区对应设置有由一个以上薄膜电晶管所组成一组扫描驱动与传输数据的像素薄膜电路、以及一光侦测薄膜,所述光侦测薄膜为上述方案任一项所述的光侦测薄膜。
发明人还一种光侦测显示装置,所述显示装置包括显示单元,所述显示单元上设置有光侦测感应区,所述光侦测感应区下方设置有光侦测器件,所述光侦测器件为上述方案所述的光侦测器件。
进一步地,所述显示单元乃是以有源阵列薄膜晶体管作为扫描驱动与传输数据的显示屏,包括AMOLED显示屏、LCD液晶显示屏、微发光二极管显示屏、量子点显示屏、或是电子墨水显示屏。
进一步地,当所述显示单元为LCD液晶显示屏或电子墨水显示屏时,所述光侦测器件的下方还设置有背光单元,所述光侦测器件设置于背光单元和LCD液晶显示屏之间。
进一步地,所述光侦测感应区包括至少两个光侦测感应子区域,每一光侦测感应子区域的下方对应设置一光侦测器件。
进一步地,所述显示装置还包括光侦测器件电路,所述光侦测器件控制电路用于在接收启动信号时,控制光侦测器件开启,或用于在接收到关闭信号时,控制光侦测器件关闭。
发明人还提供了一种光侦测薄膜的制备方法,所述方法包括以下步骤:
在像素薄膜晶体管的基材上通过化磁控溅射镀膜出栅极;
在所述栅极的上方通过化学气相沉积或是磁控溅射镀膜出绝缘层;
在所述绝缘层的上方通过化学气相沉积镀膜出源极和漏极的n型掺杂半导体层,并通过磁控溅射镀膜出源极和漏极的金属层,通过黄光蚀刻工艺定义出预设结构的源极和漏极,得到源极和漏极横向共面,且间隙配合,并使得源极和漏极横向之间形成光敏漏电流通道;
在所述光敏漏电流通道内化学气相沉积镀膜出光吸收半导体层。
进一步地,所述步骤“通过黄光蚀刻工艺定义出预设结构的源极和漏极,得到源极和漏极横向共面,且间隙配合,并使得源极和漏极横向之间形成光敏漏电流通道”包括:通过黄光蚀刻工艺定义出源极电极组和漏极电极组,每一个源极电极组包括多个源极,源极和源极之间相互并联;每一个漏极电极组包括多个漏极,漏极和漏极之间相互并联;相邻的源极之间形成第一间隙,一个漏极置于所述第一间隙内,相邻的漏极之间形成第二间隙,一个源极置于所述第二间隙内,源极和漏极之间交错设置且间隙配合。
进一步地,所述光吸收半导体层为未作掺杂的本质非晶硅结构,所述非晶硅结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将氢气混入硅烷以使得半导体层的结晶度小于40%,且其禁带宽度1.7eV~1.8eV。
进一步地,所述光吸收半导体层为未作掺杂的本质微晶硅结构,所述微晶硅结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将氢气混入硅烷以使得半导体层的结晶度大于40%,且其禁带宽度小于1.7eV。
进一步地,所述光吸收半导体层为非结晶硅化锗结构,所述非结晶硅化锗结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将锗烷以及氢气混入硅烷以形成非结晶硅化锗结构,且其禁带宽度小于1.7eV。
进一步地,所述源极与漏极皆是由自上而下为n型掺杂半导体层与金属层所形成的结构,所述n型掺杂半导体层通过以下方式制备:将硅烷、氢气与磷化氢通过化学气相沉积成膜形成n型掺杂半导体层。
进一步地,所述方法还包括:在光吸收半导体层的上端面通过化学气相沉积镀膜出绝缘保护层。
进一步地,所述方法包括:
在所述绝缘保护层上端面设置有一光学器件,所述光学器件用于降低光线在光吸收半导体层的上端面的反射率、或是减小光线在光吸收半导体层的折射角度以增加光入射量。
进一步地,所述光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构,且所述光学器件的折射率小于光吸收半导体层的折射率。
进一步地,所述光学器件是采用化学汽相沉积或溅射镀膜方式将氧化物及其衍生化合物或氮化物及其衍生化合物制备成膜。
进一步地,所述氧化物及其衍生化合物包括:氧化硅(SiOX)、五氧化二铌(Nb2O5)、氧化锌(ZnO)、氧化铟锡(ITO)、氧化钛(TiO2);所述氮化物及其衍生化合物包括:氮化硅(SiNX)。
本发明具有以下优点:光侦测器件包括MxN个像素侦测区,每一像素侦测区对应设置有由两个以上薄膜电晶管所组成一组扫描驱动与传输数据的像素薄膜电路、以及一光侦测薄膜。所示光侦测薄膜包括光敏薄膜晶体管,所述光敏薄膜晶体管包括栅极、源极、漏极、绝缘层、光吸收半导体层;所述光敏薄膜晶体管为倒立共平面式结构,所述倒立共平面式结构包括:所述栅极、绝缘层、源极纵向自下而上设置,所述漏极与所述源极横向共面设置;绝缘层包裹所述栅极,以使得栅极与源极、栅极与漏极之间均不接触;源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道,所述光吸收半导体层设置于光敏漏电流通道内。
相较于一般采用TFT漏电流作光敏薄膜晶体管之器件,本发明以倒立共平面型场效晶体管结构将光吸收半导体层配置于最上方,大幅增加了光电子的激发。配置于底层的源极与漏极,在每一个侦测像素里,所属同一像素的多个源极都相互并联,且所属同一像素的多个漏极也都相互并联,进而降低了光激发之电子与空穴再复合机率,增加了场效应作用下电极收集光电子的成功机率,最大化地改善了TFT漏电流光敏薄膜晶体管的光敏感度。本发明无需掺杂含硼气体即可实现,有效减少了光侦测薄膜生产过程中对环境的污染,降低了生产成本。
附图说明
图1为本发明一实施方式所述的光侦测薄膜的剖面图;
图2为本发明一实施方式所述的源极和漏极配合的示意图;
图3为本发明一实施方式所述的光侦测显示装置的示意图;
图4为本发明一实施方式所述的光侦测薄膜的制备方法的流程图;
图5为本发明一实施方式所述的光侦测薄膜制备过程中的示意图;
图6为本发明另一实施方式所述的光侦测薄膜制备过程中的示意图;
图7为本发明另一实施方式所述的光侦测薄膜制备过程中的示意图;
图8为本发明另一实施方式所述的光侦测薄膜制备过程中的示意图;
附图标记:
1、栅极;
2、源极;
3、漏极;
4、绝缘层;
5、光吸收半导体层。
具体实施方式
为详细说明技术方案的技术内容、构造特征、所实现目的及效果,以下结合具体实施例并配合附图详予说明。
如图1所示,为本发明一实施方式所述的光侦测薄膜的剖面图。所述光侦测薄膜包括TFT(Thin Film Transistor)电路区域和光侦测薄膜晶体管区域,所述光侦测薄膜晶体管区域设置有光敏薄膜晶体管。本发明主要是针对光敏薄膜晶体管进行改进,以增强光敏薄膜晶体管的光敏感度并提升信号噪声比,使得包含有该光敏薄膜晶体管的光侦测薄膜所组成的器件可以适用于高光敏度的应用场景需求(如设置于显示屏下方进行光侦测功能)。
所述光敏薄膜晶体管包括栅极1、源极2、漏极3、绝缘层4、光吸收半导体层5;所述光敏薄膜晶体管为倒立共平面式结构,所述倒立共平面式结构包括:所述栅极1、绝缘层4、源极2纵向自下而上设置,所述漏极3与所述源极2横向共面设置;绝缘层4包裹所述栅极,以使得栅极1与源极2、栅极1与漏极3之间均不接触;源极2和漏极3之间间隙配合,源极2和漏极3横向之间形成光敏漏电流通道,所述光吸收半导体层5设置于光敏漏电流通道内。
一般藉由栅极电压控制TFT操作在关闭状态时,源极到漏极之间不会有电流通过;然而当TFT受光源照射时,由于光的能量在半导体激发出电子-空穴对,TFT结构的场效应作用会使电子-空穴对分离,进而使TFT产生光敏漏电流。这样的光敏漏电流特性让TFT阵列可应用在光侦测或光侦测之技术上。相较于一般采用TFT漏电流作光敏薄膜晶体管之器件,本发明以倒立共平面型场效晶体管结构将光吸收半导体层配置于最上方吸光层,大幅增加了光电子的激发,提高了光电转换效率。
以熟知的场效晶体管结构而言,作为扫描驱动与数据传输开关的TFT不需特别针对源极和漏极之间收集光电流的结构作设计;然而对场效晶体管应用在光敏漏电流的侦测上,如果被光线激发的电子-空穴对被场效分离后,受电场驱动的飘移(Drift)路径太长,极有可能在光电子未能顺利抵达电极之前,就已经与空穴作再结合(Recombination),或是被光吸收半导体层本身的悬空键结(Dangling Bond)缺陷给捕获,无法有效地贡献作光侦测的光电流输出。
为了改善光敏漏电流受源极与漏极之间通道长度的影响,以达到可增加吸收光半导体面积却不致于劣化光电转换效率的目的,本发明提出了一源极与漏极的新型结构。
如图2所示,所述源极和漏极的数量均为多个,源极和源极之间相互并联,漏极和漏极之间相互并联;所述“源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道”包括:相邻的源极之间形成第一间隙,一个漏极置于所述第一间隙内,相邻的漏极之间形成第二间隙,一个源极置于所述第二间隙内,源极和漏极之间交错设置且间隙配合。每一源极与相邻的漏极之间的距离小于电子飘移距离,所述电子飘移距离为电子在场效作用下能够生存的距离。这样,在每一个侦测像素里,所属同一像素的多个源极都相互并联,且所属同一像素的多个漏极也都相互并联,可以有效降低光激发电子与空穴再复合的机率,提高了场效应作用下电极收集光电子的成功机率,最大化地改善了TFT漏电流光敏薄膜晶体管的光敏度。
在某些实施例中,所述光吸收半导体层为未作掺杂的本质非晶硅结构,所述非晶硅结构乃是由硅烷与氢气通过化学气相沉积成膜的半导体层,非晶硅结构的结晶度小于40%,且其禁带宽度1.7eV~1.8eV。未作掺杂的本质结构是指除了硅烷与氢气之外,不掺杂其他气体并通过化学气相沉积成膜的结构。禁带宽度(Band gap)是指一个带隙宽度(单位是电子伏特(eV)),固体中电子的能量是不可以连续取值的,而是一些不连续的能带,要导电就要有自由电子存在,自由电子存在的能带称为导带(能导电),被束缚的电子要成为自由电子,就必须获得足够能量从价带跃迁到导带,这个能量的最小值就是禁带宽度。禁带宽度是半导体的一个重要特征参量,其大小主要决定于半导体的能带结构,即与晶体结构和原子的结合性质等有关。
为了使得包含有该光敏薄膜晶体管的光侦测薄膜所组成的器件(即TFT影像感测阵列薄膜)能够识别的光信号波长从可见光范围扩展至红外光范围,在本实施方式中,所述光吸收半导体层为微晶硅结构或非结晶硅化锗结构,使得,光吸收半导体层以用于接收可见光至红外光(或近红外光)波长范围内的光信号,从而有效提高了TFT影像感测阵列薄膜的应用场景。
在另一些实施例,所述光吸收半导体层为未作掺杂的本质微晶硅结构,所述微晶硅结构乃是由硅烷与氢气通过化学气相沉积成膜的半导体层,微晶硅的结构的结晶度大于40%,且其禁带宽度小于1.7eV。
在某些实施例中,所述光吸收半导体层为非结晶硅化锗结构,所述非结晶硅化锗结构为硅烷、氢气与锗烷通过化学气相沉积成膜的非结晶半导体层,且其禁带宽度小于1.7eV。在室温下(300K),锗的禁带宽度约为0.66eV,硅烷中含有锗元素,当掺入锗元素后,会使得光吸收半导体层的禁带宽度下降,当满足小于1.7eV时,说明光吸收半导体层可以接收可见光至红外光(或近红外光)波长范围内的光信号。通过调整化学气象沉积的GeH4浓度,可以将含有非晶或微晶硅化锗结构的光敏薄膜晶体管的操作波长范围扩展到光波长600nm到1000nm的范围。
在某些实施例中,所述源极与漏极皆是由自上而下为n型掺杂半导体层与金属层所形成的结构,所述n型掺杂半导体层是指其结构为硅烷、氢气与磷化氢通过化学气相沉积成膜的半导体层。优选的,n型掺杂半导体层为重掺杂磷化氢成膜的半导体层,重掺杂磷化氢是指掺杂的磷化氢浓度是标准工艺浓度的两倍以上。
在某些实施例中,所述光吸收半导体层的上端面设置有绝缘保护层。绝缘保护层可以采用绝缘材料制成,以达到保护光吸收半导体层的目的。所述绝缘材料是电工绝缘材料,按国家标准GB2900.5规定绝缘材料的定义是“用来使器件在电气上绝缘的材料”,也就是能够阻止电流通过的材料。绝缘保护层与包裹栅极的绝缘层可以采用同一绝缘材料,也可以采用不同的绝缘材料,具体根据实际需要确定。
在某些实施例中,在所述绝缘保护层上端面设置有一光学器件,所述光学器件用于降低光线在光吸收半导体层的上端面的反射率、或是减小光线在光吸收半导体层的折射角度以增加光入射量。降低光线在光吸收半导体层的上端面的反射率、或者减小光线在光吸收半导体层的折射角度,可以让光线尽可能地以接近于垂直方向射入光吸收半导体层,使得光线尽可能地被光吸收半导体层所吸收,从而进一步提高光敏薄膜晶体管的光电转换率。
在某些实施例中,所述光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构,且所述光学器件的折射率小于光吸收半导体层的折射率。所述光学器件的折射率小于光吸收半导体层的折射率,可以使得光线在光学器件上发生折射后,入射角小于折射角,即光线尽可能地以接近于垂直方向射入光吸收半导体层。
在某些实施例中,所述光学器件是采用化学汽相沉积或溅射镀膜方式将氧化物及其衍生化合物或氮化物及其衍生化合物制备成膜。所述氧化物及其衍生化合物包括:氧化硅(SiOX)、五氧化二铌(Nb2O5)、氧化锌(ZnO)、氧化铟锡(ITO)、氧化钛(TiO2);所述氮化物及其衍生化合物包括:氮化硅(SiNX)。
发明人还提供了一种光侦测器件,所述光侦测器件包括MxN个像素侦测区,每一像素侦测区对应设置有由一个以上薄膜电晶管所组成一组扫描驱动与传输数据的像素薄膜电路、以及一光侦测薄膜,所述光侦测薄膜为上文所描述的光侦测薄膜。每个像素侦测区用于感知一个像素,例如显示屏的分辨率为1920x1080,则光侦测器件包括1920x1080个像素侦测区,每一像素侦测区均设置有光侦测薄膜。光侦测器件为多个光侦测薄膜组成的阵列器件,在实际应用场景中,可以将光侦测器件置于显示屏的底部,实现真正的显示屏内影像感测功能。
如图3所示,所述显示装置包括显示单元,所述显示单元上设置有光侦测感应区,所述光侦测感应区下方设置有光侦测器件(即图3所示的TFT影像感测阵列薄膜),所述光侦测器件为如前文所述的光侦测器件。所述显示装置为具有触摸显示屏的电子设备,如手机、平板电脑、个人数字助理等智能移动设备,还可以是个人计算机、工业装备用计算机等电子设备。所述显示单元乃是以有源阵列薄膜晶体管作为扫描驱动与传输数据的显示屏,包括AMOLED显示屏、LCD液晶显示屏、微发光二极管显示屏、量子点显示屏、或是电子墨水显示屏。
在某些实施例中,当所述显示单元为LCD液晶显示屏或电子墨水显示屏时,所述光侦测器件的下方还设置有背光单元,所述光侦测器件设置于背光单元和LCD液晶显示屏之间。由于LCD液晶显示屏和电子墨水显示屏不属于自发光元件,因而在安装时需要在光侦测器件的下方增加背光单元。背光单元可以为LCD背光模组,也可以为其他具有自发光功能的电子元件。在另一些实施例中,当所述显示单元为AMOLED显示屏或自带发光功能的其他显示屏时,由于OLED显示屏属于自发光元件,因而无需设置背光单元。通过上述两种方案的设置,可以有效满足不同厂家的生产需求,提高装置的适用范围。
在某些实施例中,光侦测器件的数量为一个,且设置于显示单元下方。在另一些实施例中,所述光侦测感应区包括至少两个光侦测感应子区域,每一光侦测感应子区域的下方对应设置一光侦测器件。所述显示装置还包括光侦测器件电路,所述光侦测器件控制电路用于在接收启动信号时,控制光侦测器件开启,或用于在接收到关闭信号时,控制光侦测器件关闭。
以光侦测感应区的数量为两个为例,两个光侦测感应子区域可以一上一下或一左一右均匀分布于屏幕中,也可以以其他排列方式分布于屏幕中。下面对具有两个光侦测感应子区域的装置的应用过程做具体说明:在使用过程中,接收用户触发的启动信号,将两个光侦测感应子区域下方的光侦测器件都设置成开启状态。优选的实施例中,两个光侦测感应子区域构成的范围覆盖了整个显示屏,这样可以保证当两个光侦测感应子区域下方的光侦测器件都设置成开启状态时,进入显示屏的光信号可以被下方的TFT影像感测阵列薄膜(即光侦测器件)所吸收。在其他实施例中,两个光侦测感应子区域构成的范围也可以占整个显示屏面积的2/3、3/4等。当然,用户也可以根据自身喜好,设置某一个光侦测感应子区域下方的光侦测器件开启,另一个光侦测感应子区域下方的光侦测器件关闭。在不需要对装置进行操作时,还可以将两个光侦测感应子区域下方的光侦测器件均设置为关闭状态。
在其他实施例中,光侦测感应子区域的数量还可以为其他数值(即大于两个),具体可以根据实际需要进行设置。简言之,各个光侦测感应子区域下方的光侦测器件下方处于开启或关闭,可以根据用户自身喜好进行设置。
如图4所示,为本发明一实施方式所述的光侦测薄膜的制备方法的流程图。所述方法包括以下步骤:
首先进入步骤S401在像素薄膜晶体管的基材上通过化磁控溅射镀膜出栅极。像素薄膜晶体管的基材可以采用硬板,也可以采用柔性材料(如聚酰亚胺);
而后进入步骤S402在所述栅极的上方通过化学气相沉积或是磁控溅射镀膜出绝缘层;
而后进入步骤S403在所述绝缘层的上方通过化学气相沉积镀膜出源极和漏极的n型掺杂半导体层,并通过磁控溅射镀膜出源极和漏极的金属层,通过黄光蚀刻工艺定义出预设结构的源极和漏极,得到源极和漏极横向共面,且间隙配合,并使得源极和漏极横向之间形成光敏漏电流通道;
而后进入步骤S404在所述光敏漏电流通道内化学气相沉积镀膜出光吸收半导体层。
如图5至8所示,所述步骤“通过黄光蚀刻工艺定义出预设结构的源极和漏极,得到源极和漏极横向共面,且间隙配合,并使得源极和漏极横向之间形成光敏漏电流通道”包括:通过黄光蚀刻工艺定义出源极电极组和漏极电极组,每一个源极电极组包括多个源极,源极和源极之间相互并联;每一个漏极电极组包括多个漏极,漏极和漏极之间相互并联;相邻的源极之间形成第一间隙,一个漏极置于所述第一间隙内,相邻的漏极之间形成第二间隙,一个源极置于所述第二间隙内,源极和漏极之间交错设置且间隙配合。
在某些实施例中,所述光吸收半导体层为未作掺杂的本质非晶硅结构,所述非晶硅结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将氢气混入硅烷以使得半导体层的结晶度小于40%,且其禁带宽度1.7eV~1.8eV。
在某些实施例中,所述光吸收半导体层为未作掺杂的本质微晶硅结构,所述微晶硅结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将氢气混入硅烷以使得半导体层的结晶度大于40%,且其禁带宽度小于1.7eV。
在某些实施例中,所述光吸收半导体层为非结晶硅化锗结构,所述非结晶硅化锗结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将锗烷以及氢气混入硅烷以形成非结晶硅化锗结构,且其禁带宽度小于1.7eV。
在某些实施例中,所述源极与漏极皆是由自上而下为n型掺杂半导体层与金属层所形成的结构,所述n型掺杂半导体层通过以下方式制备:将硅烷、氢气与磷化氢通过化学气相沉积成膜形成n型掺杂半导体层。
在某些实施例中,所述方法还包括:在光吸收半导体层的上端面通过化学气相沉积镀膜出绝缘保护层。绝缘保护层可以采用绝缘材料制成,以达到保护光吸收半导体层的目的。
在某些实施例中,所述方法包括:在所述绝缘保护层上端面设置有一光学器件,所述光学器件用于降低光线在光吸收半导体层的上端面的反射率、或是减小光线在光吸收半导体层的折射角度以增加光入射量。这样,可以使得光线尽可能地以接近于垂直方向射入光吸收半导体层,使得光线尽可能地被光吸收半导体层所吸收,从而进一步提高光敏薄膜晶体管的光电转换率。
在某些实施例中,所述光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构,且所述光学器件的折射率小于光吸收半导体层的折射率。所述光学器件的折射率小于光吸收半导体层的折射率,可以使得光线在光学器件上发生折射后,入射角小于折射角,即光线尽可能地以接近于垂直方向射入光吸收半导体层。
在某些实施例中,所述光学器件是采用化学汽相沉积或溅射镀膜方式将氧化物及其衍生化合物或氮化物及其衍生化合物制备成膜。所述氧化物及其衍生化合物包括:氧化硅(SiOX)、五氧化二铌(Nb2O5)、氧化锌(ZnO)、氧化铟锡(ITO)、氧化钛(TiO2);所述氮化物及其衍生化合物包括:氮化硅(SiNX)。
本发明具有以下优点:光侦测器件包括MxN个像素侦测区,每一像素侦测区对应设置有由两个以上薄膜电晶管所组成一组扫描驱动与传输数据的像素薄膜电路、以及一光侦测薄膜。所示光侦测薄膜包括光敏薄膜晶体管,所述光敏薄膜晶体管包括栅极、源极、漏极、绝缘层、光吸收半导体层;所述光敏薄膜晶体管为倒立共平面式结构,所述倒立共平面式结构包括:所述栅极、绝缘层、源极纵向自下而上设置,所述漏极与所述源极横向共面设置;绝缘层包裹所述栅极,以使得栅极与源极、栅极与漏极之间均不接触;源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道,所述光吸收半导体层设置于光敏漏电流通道内。
相较于一般采用TFT漏电流作光敏薄膜晶体管之器件,本发明以倒立共平面型场效晶体管结构将光吸收半导体层配置于最上方,大幅增加了光电子的激发。配置于底层的源极与漏极,在每一个侦测像素里,所属同一像素的多个源极都相互并联,且所属同一像素的多个漏极也都相互并联,进而降低了光激发之电子与空穴再复合机率,增加了场效应作用下电极收集光电子的成功机率,最大化地改善了TFT漏电流光敏薄膜晶体管的光敏感度。本发明无需掺杂含硼气体即可实现,有效减少了光侦测薄膜生产过程中对环境的污染,降低了生产成本。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者终端设备所固有的要素。在没有更多限制的情况下,由语句“包括……”或“包含……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的要素。此外,在本文中,“大于”、“小于”、“超过”等理解为不包括本数;“以上”、“以下”、“以内”等理解为包括本数。
本领域内的技术人员应明白,上述各实施例可提供为方法、装置、或计算机程序产品。这些实施例可采用完全硬件实施例、完全软件实施例、或结合软件和硬件方面的实施例的形式。上述各实施例涉及的方法中的全部或部分步骤可以通过程序来指令相关的硬件来完成,所述的程序可以存储于计算机设备可读取的存储介质中,用于执行上述各实施例方法所述的全部或部分步骤。所述计算机设备,包括但不限于:个人计算机、服务器、通用计算机、专用计算机、网络设备、嵌入式设备、可编程设备、智能移动终端、智能家居设备、穿戴式智能设备、车载智能设备等;所述的存储介质,包括但不限于:RAM、ROM、磁碟、磁带、光盘、闪存、U盘、移动硬盘、存储卡、记忆棒、网络服务器存储、网络云存储等。
上述各实施例是参照根据实施例所述的方法、设备(系统)、和计算机程序产品的流程图和/或方框图来描述的。应理解可由计算机程序指令实现流程图和/或方框图中的每一流程和/或方框、以及流程图和/或方框图中的流程和/或方框的结合。可提供这些计算机程序指令到计算机设备的处理器以产生一个机器,使得通过计算机设备的处理器执行的指令产生用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的装置。
这些计算机程序指令也可存储在能引导计算机设备以特定方式工作的计算机设备可读存储器中,使得存储在该计算机设备可读存储器中的指令产生包括指令装置的制造品,该指令装置实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能。
这些计算机程序指令也可装载到计算机设备上,使得在计算机设备上执行一系列操作步骤以产生计算机实现的处理,从而在计算机设备上执行的指令提供用于实现在流程图一个流程或多个流程和/或方框图一个方框或多个方框中指定的功能的步骤。
尽管已经对上述各实施例进行了描述,但本领域内的技术人员一旦得知了基本创造性概念,则可对这些实施例做出另外的变更和修改,所以以上所述仅为本发明的实施例,并非因此限制本发明的专利保护范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围之内。
Claims (28)
1.一种光侦测薄膜,其特征在于,所述光侦测薄膜包括光敏薄膜晶体管,所述光敏薄膜晶体管包括栅极、源极、漏极、绝缘层、光吸收半导体层;所述光敏薄膜晶体管为倒立共平面式结构,所述倒立共平面式结构包括:所述栅极、绝缘层、源极纵向自下而上设置,所述漏极与所述源极横向共面设置;绝缘层包裹所述栅极,以使得栅极与源极、栅极与漏极之间均不接触;源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道,所述光吸收半导体层设置于光敏漏电流通道内。
2.如权利要求1所述的光侦测薄膜,其特征在于,所述源极和漏极的数量均为多个,源极和源极之间相互并联,漏极和漏极之间相互并联;所述“源极和漏极之间间隙配合,源极和漏极横向之间形成光敏漏电流通道”包括:相邻的源极之间形成第一间隙,一个漏极置于所述第一间隙内,相邻的漏极之间形成第二间隙,一个源极置于所述第二间隙内,源极和漏极之间交错设置且间隙配合。
3.如权利要求1所述的光侦测薄膜,其特征在于,所述光吸收半导体层为未作掺杂的本质非晶硅结构,所述非晶硅结构乃是由硅烷与氢气通过化学气相沉积成膜的半导体层,非晶硅结构的结晶度小于40%,且其禁带宽度1.7eV~1.8eV。
4.如权利要求1所述的光侦测薄膜,其特征在于,所述光吸收半导体层为未作掺杂的本质微晶硅结构,所述微晶硅结构乃是由硅烷与氢气通过化学气相沉积成膜的半导体层,微晶硅的结构的结晶度大于40%,且其禁带宽度小于1.7eV。
5.如权利要求1所述的光侦测薄膜,其特征在于,所述光吸收半导体层为非结晶硅化锗结构,所述非结晶硅化锗结构为硅烷、氢气与锗烷通过化学气相沉积成膜的非结晶半导体层,且其禁带宽度小于1.7eV。
6.如权利要求1所述的光侦测薄膜,其特征在于,所述源极与漏极皆是由自上而下为n型掺杂半导体层与金属层所形成的结构,所述n型掺杂半导体层是指其结构为硅烷、氢气与磷化氢通过化学气相沉积成膜的半导体层。
7.如权利要求1所述的光侦测薄膜,其特征在于,所述光吸收半导体层的上端面设置有绝缘保护层。
8.如权利要求1或7所述的光侦测薄膜,其特征在于,在所述绝缘保护层上端面设置有一光学器件,所述光学器件用于降低光线在光吸收半导体层的上端面的反射率、或是减小光线在光吸收半导体层的折射角度以增加光入射量。
9.如权利要求8所述的光侦测薄膜,其特征在于,所述光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构,且所述光学器件的折射率小于光吸收半导体层的折射率。
10.如权利要求8所述的光侦测薄膜,其特征在于,所述光学器件是采用化学汽相沉积或溅射镀膜方式将氧化物及其衍生化合物或氮化物及其衍生化合物制备成膜。
11.如权利要求10所述的光侦测薄膜,其特征在于,所述氧化物及其衍生化合物包括:氧化硅(SiOX)、五氧化二铌(Nb2O5)、氧化锌(ZnO)、氧化铟锡(ITO)、氧化钛(TiO2);所述氮化物及其衍生化合物包括:氮化硅(SiNX)。
12.一种光侦测器件,其特征在于,所述光侦测器件包括MxN个像素侦测区,每一像素侦测区对应设置有由一个以上薄膜电晶管所组成一组扫描驱动与传输数据的像素薄膜电路、以及一光侦测薄膜,所述光侦测薄膜为如权利要求1至11项中任一项所述的光侦测薄膜。
13.一种光侦测显示装置,其特征在于,所述显示装置包括显示单元,所述显示单元上设置有光侦测感应区,所述光侦测感应区下方设置有光侦测器件,所述光侦测器件为如权利要求12所述的光侦测器件。
14.如权利要求13所述的光侦测显示装置,其特征在于,所述显示单元乃是以有源阵列薄膜晶体管作为扫描驱动与传输数据的显示屏,包括AMOLED显示屏、LCD液晶显示屏、微发光二极管显示屏、量子点显示屏、或是电子墨水显示屏。
15.如权利要求14所述的光侦测显示装置,其特征在于,当所述显示单元为LCD液晶显示屏或电子墨水显示屏时,所述光侦测器件的下方还设置有背光单元,所述光侦测器件设置于背光单元和LCD液晶显示屏之间。
16.如权利要求13所述的光侦测显示装置,其特征在于,所述光侦测感应区包括至少两个光侦测感应子区域,每一光侦测感应子区域的下方对应设置一光侦测器件。
17.如权利要求13或16所述的光侦测显示装置,其特征在于,所述显示装置还包括光侦测器件电路,所述光侦测器件控制电路用于在接收启动信号时,控制光侦测器件开启,或用于在接收到关闭信号时,控制光侦测器件关闭。
18.一种光侦测薄膜的制备方法,其特征在于,所述方法包括以下步骤:
在像素薄膜晶体管的基材上通过化磁控溅射镀膜出栅极;
在所述栅极的上方通过化学气相沉积或是磁控溅射镀膜出绝缘层;
在所述绝缘层的上方通过化学气相沉积镀膜出源极和漏极的n型掺杂半导体层,并通过磁控溅射镀膜出源极和漏极的金属层,通过黄光蚀刻工艺定义出预设结构的源极和漏极,得到源极和漏极横向共面,且间隙配合,并使得源极和漏极横向之间形成光敏漏电流通道;
在所述光敏漏电流通道内化学气相沉积镀膜出光吸收半导体层。
19.如权利要求18所述的光侦测薄膜的制备方法,其特征在于,所述步骤“通过黄光蚀刻工艺定义出预设结构的源极和漏极,得到源极和漏极横向共面,且间隙配合,并使得源极和漏极横向之间形成光敏漏电流通道”包括:通过黄光蚀刻工艺定义出源极电极组和漏极电极组,每一个源极电极组包括多个源极,源极和源极之间相互并联;每一个漏极电极组包括多个漏极,漏极和漏极之间相互并联;相邻的源极之间形成第一间隙,一个漏极置于所述第一间隙内,相邻的漏极之间形成第二间隙,一个源极置于所述第二间隙内,源极和漏极之间交错设置且间隙配合。
20.如权利要求18所述的光侦测薄膜的制备方法,其特征在于,所述光吸收半导体层为未作掺杂的本质非晶硅结构,所述非晶硅结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将氢气混入硅烷以使得半导体层的结晶度小于40%,且其禁带宽度1.7eV~1.8eV。
21.如权利要求18所述的光侦测薄膜的制备方法,其特征在于,所述光吸收半导体层为未作掺杂的本质微晶硅结构,所述微晶硅结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将氢气混入硅烷以使得半导体层的结晶度大于40%,且其禁带宽度小于1.7eV。
22.如权利要求18所述的光侦测薄膜的制备方法,其特征在于,所述光吸收半导体层为非结晶硅化锗结构,所述非结晶硅化锗结构通过以下方式制备:在采用化学气相沉积镀膜过程中,将锗烷以及氢气混入硅烷以形成非结晶硅化锗结构,且其禁带宽度小于1.7eV。
23.如权利要求18所述的光侦测薄膜的制备方法,其特征在于,所述源极与漏极皆是由自上而下为n型掺杂半导体层与金属层所形成的结构,所述n型掺杂半导体层通过以下方式制备:将硅烷、氢气与磷化氢通过化学气相沉积成膜形成n型掺杂半导体层。
24.如权利要求18所述的光侦测薄膜的制备方法,其特征在于,所述方法还包括:在光吸收半导体层的上端面通过化学气相沉积镀膜出绝缘保护层。
25.如权利要求18或24所述的光侦测薄膜的制备方法,其特征在于,所述方法包括:
在所述绝缘保护层上端面设置有一光学器件,所述光学器件用于降低光线在光吸收半导体层的上端面的反射率、或是减小光线在光吸收半导体层的折射角度以增加光入射量。
26.如权利要求25所述的光侦测薄膜的制备方法,其特征在于,所述光学器件包括折射率呈周期性变化的光子晶体结构或微透镜阵列结构、或是折射率呈非周期性变化的漫散射结构,且所述光学器件的折射率小于光吸收半导体层的折射率。
27.如权利要求26所述的光侦测薄膜的制备方法,其特征在于,所述光学器件是采用化学汽相沉积或溅射镀膜方式将氧化物及其衍生化合物或氮化物及其衍生化合物制备成膜。
28.如权利要求27所述的光侦测薄膜的制备方法,其特征在于,所述氧化物及其衍生化合物包括:氧化硅(SiOX)、五氧化二铌(Nb2O5)、氧化锌(ZnO)、氧化铟锡(ITO)、氧化钛(TiO2);所述氮化物及其衍生化合物包括:氮化硅(SiNX)。
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CN113764533A (zh) * | 2017-08-24 | 2021-12-07 | 上海耕岩智能科技有限公司 | 红外光敏晶体管、红外光侦测器件、显示装置、制备方法 |
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