CN102969250A - Ltps薄膜及薄膜晶体管的制备方法、阵列基板及显示装置 - Google Patents

Ltps薄膜及薄膜晶体管的制备方法、阵列基板及显示装置 Download PDF

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CN102969250A
CN102969250A CN2012104789972A CN201210478997A CN102969250A CN 102969250 A CN102969250 A CN 102969250A CN 2012104789972 A CN2012104789972 A CN 2012104789972A CN 201210478997 A CN201210478997 A CN 201210478997A CN 102969250 A CN102969250 A CN 102969250A
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amorphous silicon
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田雪雁
龙春平
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种低温多晶硅薄膜制备方法，包括：提供一基板；在基板上依次形成导热绝缘层、缓冲层和非晶硅层；其中，导热绝缘层具有规则分布的图案；对非晶硅层进行高温处理和激光退火，使非晶硅层形成多晶硅薄膜。本发明还公开了所制得的低温多晶硅薄膜、薄膜晶体管、阵列基板和显示装置。本发明通过在基板上增加一层图案状的导热绝缘层，使得非晶硅层进行激光退火时，非晶硅薄膜中的导热状况发生变化，产生温度梯度。激光退火时，非晶硅薄膜在有导热绝缘层图案的区域，由于热量被快速吸收，这些区域会比其它区域冷却得更快，能够先行形成结晶核，经过退火过程，结晶核再继续向周围生长，一直到生长为大的多晶硅晶粒，并且分布均匀。

Description

LTPS薄膜及薄膜晶体管的制备方法、阵列基板及显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种低温多晶硅（LTPS）薄膜制备方法、薄膜晶体管及其制备方法、阵列基板及显示装置。 
背景技术
随着平面显示器技术的蓬勃发展，有源矩阵式有机发光显示器（Active Matrix Organic Light Emitting Diode,简称AMOLED）由于其具有更轻薄、自发光和高反应速率等优良特性，成为未来液晶显示器发展的趋势。其可以包括依次形成在基板底层的有源开关、绝缘层、透明电极、发光层和金属电极，其中，有源开关通过接触孔与透明电极连接，以控制摄像数据的写入。目前，为适应AMOLED尺寸大型化的发展，有源开关通常采用低温多晶硅薄膜晶体管（LowTemperature Poly-silicon TFT,简称LTPS-TFT）作为像素开关控制元件；而用于制备LTPS-TFT的低温多晶硅薄膜的品质好坏与否对于LTPS-TFT的电性表现有着直接影响，因此，低温多晶硅薄膜的制造技术也越来越受到重视。 
目前AMOLED中，背板技术中制备多晶硅薄膜，主要采用准分子激光退火（Excimer Laser Annealing,简称ELA），固相晶化（SolidPhase Crystallization,简称SPC），金属诱导晶化（Metal-InducedCrystallization,简称MIC）等多种制备方法；而采用准分子激光退火工艺来得到背板中晶体管有源层的多晶硅薄膜，是目前唯一已经实现量产的方法。准分子激光退火工艺制备低温多晶硅薄膜的过程参考图1所示，依次在玻璃衬底101上形成缓冲层103和非晶硅层104，然后对非晶硅层104采用激光束105进行激光退火，然后即可得到0.3μm-0.5μm左右的多晶硅薄膜。 
在过去的准分子激光退火工艺研究中，研究者一直致力于开发大晶粒的低温多晶硅，以便能够得到迁移率较高的低温多晶硅薄膜晶体管。虽然准分子激光器的输出波长、脉宽、能量分布及均匀性、能量密度、脉冲频率，原始非晶硅膜的制备方法及其厚度、去氢方法，退火气氛等，对低温多晶硅薄膜的质量都有一定的影响，但终究还是尚未解决多晶硅晶粒偏小的难题。 
发明内容
（一）要解决的技术问题 
本发明要解决的技术问题是如何克服低温多晶硅薄膜制备过程中晶粒偏小的问题。 
（二）技术方案 
为了解决上述技术问题，本发明提供一种低温多晶硅薄膜制备方法，其包括： 
提供一基板； 
在所述基板上依次形成导热绝缘层、缓冲层和非晶硅层；其中，所述导热绝缘层具有规则分布的图案； 
对所述非晶硅层进行高温处理和激光退火，使所述非晶硅层形成多晶硅薄膜。 
其中，所述导热绝缘层所采用的材料为氮化铝、氮化硼、氧化铝和氧化镁中的任一种。 
其中，所述导热绝缘层具有均匀散布的圆形或方形的图案。 
其中，所述圆形或方形的图案的尺寸在0.1μm~1μm之间；优选地，所述圆形或方形的图案的尺寸为0.5μm。 
其中，所述导热绝缘层通过喷涂方式形成，或者通过磁控溅射和曝光刻蚀工艺形成。 
其中，所述非晶硅层进行高温处理和激光退火的具体过程为： 
在400-500℃的温度下，对所述非晶硅层进行0.5-3小时的高温处 理； 
对高温处理后的所述非晶硅层进行准分子激光退火，激光脉冲频率为300Hz，重叠率为92%-98%，激光能量密度为200-500mJ/cm2。 
本发明还提供了一种薄膜晶体管制备方法，其包括： 
在基板上形成多晶硅薄膜，并通过构图工艺形成TFT的有源层； 
其中，所述多晶硅薄膜是通过上述的低温多晶硅薄膜制备方法制得。 
进一步地，上述薄膜晶体管制备方法还包括：在所述有源层的上方形成栅绝缘层、栅电极、层间绝缘层、以及源电极和漏电极；所述源电极和漏电极分别通过绝缘层过孔与所述有源层的两端相连。 
其中，在所述有源层的上方形成栅绝缘层、栅电极、层间绝缘层、以及源电极和漏电极的具体过程包括： 
在所述有源层的上方沉积栅绝缘层； 
利用掩模工艺对所述有源层两端的区域进行掺杂处理，从而在所述有源层的两端形成欧姆接触区域； 
在所述栅绝缘层上方形成栅金属薄膜，并通过构图工艺形成栅电极的图案； 
在所述栅电极上方形成层间绝缘层，并通过构图工艺形成贯穿所述栅绝缘层和层间绝缘层的绝缘层过孔，从而露出所述有源层两端的欧姆接触区域； 
在所述层间绝缘层上方形成源漏金属薄膜，并通过构图工艺形成源电极和漏电极，所述源电极和漏电极分别通过所述绝缘层过孔与所述有源层两端的欧姆接触区域相连。 
本发明还提供了一种薄膜晶体管，所述薄膜晶体管采用上述的薄膜晶体管制备方法所制得。 
进一步地，上述薄膜晶体管的有源层下方形成有缓冲层和导热绝缘层。 
本发明进一步提供了一种阵列基板，其包含上述的薄膜晶体管。 
本发明进一步提供了一种显示装置，其包含上述的阵列基板。 
（三）有益效果 
上述技术方案的优点在于：，通过在基板上增加一层图案化的导热绝缘层，使得非晶硅层进行激光退火时，非晶硅薄膜中的导热状况发生变化，产生温度梯度。激光退火时，非晶硅薄膜在有导热绝缘层图案的区域，由于热量被快速吸收，这些区域会比其它区域冷却得更快，能够先行形成结晶核，经过退火过程，结晶核再继续向周围生长，一直到生长为大的多晶硅晶粒，并且分布均匀；该方法得到的高质量多晶硅薄膜，其晶粒尺寸较大，分布均匀，并且具有非常低的表面粗糙度，能够解决低温多晶硅显示器背板中迁移率较低、薄膜晶体管的漏电流较大、迁移率及阈值电压不均匀性的问题。 
附图说明
图1是现有技术中准分子激光退火制备低温多晶硅薄膜的过程示意图； 
图2是本发明实施例1中准分子激光退火制备低温多晶硅薄膜的过程示意图； 
图3是本发明实施例1中具有图案的导热绝缘层的结构示意图。 
其中，101：玻璃衬底；102：导热绝缘层；103：缓冲层；104：非晶硅层；105：激光束。 
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。 
实施例1 
本实施例公开了一种低温多晶硅薄膜的制备方法，参照图2所示，具体包括以下过程： 
（1）选用玻璃衬底101作为基板，首先对其进行预清洗； 
其中，基板除了可以选用玻璃衬底之外，还可以选用石英衬底等其他材质的透明衬底基板。 
（2）在玻璃衬底101上形成导热绝缘层102； 
其中，导热绝缘层102为图案状，具体采用磁控溅射法制作400nm的氮化铝薄膜，并采用曝光及刻蚀，从而制作出规则分布的图案，如图3所示，导热绝缘层102的图案可为均匀散布的圆形、方形或条状等。其中，导热绝缘层102的圆形或方形的图案的尺寸在0.1μm~1μm之间；优选地，所述圆形或方形的图案的尺寸为0.5μm。具体地，圆形图案的尺寸指的是圆形的直径；方形图案的尺寸可以是方形结构的外切圆的直径。此外，条状图案的尺寸也可以设置为0.1μm~1μm，即条状图案的宽度在0.1μm~1μm之间，优选为0.5μm。 
氮化硼、氧化铝或氧化镁也可以替代氮化铝来形成导热绝缘层，同样能够实现高导热且绝缘的功能；导热绝缘层也可以采用喷涂的方式形成，如喷涂分布相对均匀的燃烧合成法制备的超细氮化铝粉末作为导热绝缘层。 
（3）在导热绝缘层102上采用等离子体增强化学气相沉积（PECVD）方法沉积100-350nm的缓冲层103，缓冲层103可采用二氧化硅薄膜，之后沉积30-60nm的非晶硅层104。在完成非晶硅层104的沉积后，于400-500℃的温度下，对非晶硅层104进行0.5-3小时的高温处理，高温处理的过程是对非晶硅层104脱氢的过程。 
（4）高温处理之后，对非晶硅层104进行准分子激光退火，激光束105位于基板上方，从而得到多晶硅薄膜。准分子激光退火采用的准分子激光器为氯化氙、氟化氪和氟化氩中任一种准分子激光器。本实施例采用波长为308nm的氯化氙准分子激光器，其中激光脉冲频率为300Hz，重叠率为92%~98%，激光能量密度为200-500mJ/cm2。 
本实施例中，通过增加图案状的导热绝缘层102，改变了非晶硅薄膜中的导热状况，从而改变了多晶硅晶粒的生长状态，得到平均晶 粒0.6~1微米左右的多晶硅薄膜；因导热绝缘层102图案规则分布，所以形成的多晶硅晶粒分布均匀。 
实施例2 
本实施例提供了一种薄膜晶体管制备方法，其具体过程如下： 
在基板上形成多晶硅薄膜，并通过构图工艺形成TFT的有源层； 
在所述有源层的上方形成栅绝缘层、栅电极、层间绝缘层、以及源电极和漏电极；所述源电极和漏电极分别通过绝缘层过孔与所述有源层的两端相连； 
其中，所述多晶硅薄膜通过实施例1中所述的低温多晶硅薄膜制备方法制得。 
在所述有源层的上方形成栅绝缘层、栅电极、层间绝缘层、以及源电极和漏电极，包括： 
在所述有源层的上方沉积栅绝缘层； 
利用掩模工艺对所述有源层两端的区域进行掺杂处理，从而在所述有源层的两端形成欧姆接触区域； 
在所述栅绝缘层上方形成栅金属薄膜，并通过构图工艺形成栅电极的图案； 
在所述栅电极上方形成层间绝缘层，并通过构图工艺形成贯穿所述栅绝缘层和层间绝缘层的绝缘层过孔，从而露出所述有源层两端的欧姆接触区域； 
在所述层间绝缘层上方形成源漏金属薄膜，并通过构图工艺形成源电极和漏电极，所述源电极和漏电极分别通过所述绝缘层过孔与所述有源层两端的欧姆接触区域相连。 
通过上述方法制备的薄膜晶体管，其中的低温多晶硅薄膜晶粒尺寸较大、分布均匀，并且具有非常低的表面粗糙度，能够解决薄膜晶体管的漏电流较大、迁移率及阈值电压不均匀性的问题。 
实施例3 
本实施例提供了一种低温多晶硅薄膜晶体管，该薄膜晶体管采用实施例2中的薄膜晶体管制备方法制得。其中，该薄膜晶体管的有源层下方形成有缓冲层和导热绝缘层。本实施例中的低温多晶硅薄膜晶粒尺寸较大、分布均匀，能够解决薄膜晶体管的漏电流较大、迁移率及阈值电压不均匀性的问题。 
实施例4 
本实施例提供了一种阵列基板，该阵列基板包括实施例3中所述的薄膜晶体管，由此形成的阵列基板用于显示器背板中时，能够解决其迁移率较低、薄膜晶体管的漏电流较大、迁移率及阈值电压不均匀性的问题，适用于有源矩阵有机发光二极管显示器（AMOLED）及低温多晶硅薄膜晶体管液晶显示器（LTPS TFT-LCD）等领域。 
实施例5 
本实施例提供一种显示装置，该显示装置包括实施例4中所述的阵列基板。本实施例的显示装置，可以为有源矩阵有机发光二极管显示器（AMOLED）或者液晶显示器等，由于该显示装置中采用的低温多晶硅薄膜晶体管的电特性比较稳定，从而能够提高该显示装置的显示质量。 
由以上实施例可以看出，本发明通过在基板上增加一层图案状的导热绝缘层，使得对非晶硅层进行激光退火时，非晶硅薄膜中的导热状况发生变化，产生温度梯度。激光退火时，非晶硅薄膜在有导热绝缘层图案的区域，由于热量被快速吸收，这些区域会比其它区域冷却得更快，能够先行形成结晶核，经过退火过程，结晶核再继续向周围生长，一直到生长为大的多晶硅晶粒，并且分布均匀；该方法得到的高质量多晶硅薄膜，其晶粒尺寸较大，分布均匀，并且具有非常低的表面粗糙度，能够解决低温多晶硅显示器背板中迁移率较低、薄膜晶体管的漏电流较大、迁移率及阈值电压不均匀性的问题；该方法得到的低温多晶硅薄膜可以作为低温多晶硅薄膜晶体管的有源层，适用于 有源矩阵有机发光二极管显示器（AMOLED）及低温多晶硅薄膜晶体管液晶显示器（LTPS TFT-LCD）等领域。 
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换也应视为本发明的保护范围。 

Claims (14)

1.一种低温多晶硅薄膜制备方法，其特征在于，包括：
提供一基板；
在所述基板上依次形成导热绝缘层、缓冲层和非晶硅层；其中，所述导热绝缘层具有规则分布的图案；
对所述非晶硅层进行高温处理和激光退火，使所述非晶硅层形成多晶硅薄膜。
2.如权利要求1所述的低温多晶硅薄膜制备方法，其特征在于，所述导热绝缘层所采用的材料为氮化铝、氮化硼、氧化铝和氧化镁中的任一种。
3.如权利要求1所述的低温多晶硅薄膜制备方法，其特征在于，所述导热绝缘层具有均匀散布的圆形或方形的图案。
4.如权利要求3所述的低温多晶硅薄膜制备方法，其特征在于，所述圆形或方形的图案的尺寸在0.1μm~1μm之间。
5.如权利要求4所述的低温多晶硅薄膜制备方法，其特征在于，所述圆形或方形的图案的尺寸为0.5μm。
6.如权利要求1所述的低温多晶硅薄膜制备方法，其特征在于，所述导热绝缘层通过喷涂方式形成，或者通过磁控溅射和曝光刻蚀工艺形成。
7.如权利要求1所述的低温多晶硅薄膜制备方法，其特征在于，所述非晶硅层进行高温处理和激光退火的具体过程为：
在400-500℃的温度下，对所述非晶硅层进行0.5-3小时的高温处理；
对高温处理后的所述非晶硅层进行准分子激光退火，激光脉冲频率为300Hz，重叠率为92%-98%，激光能量密度为200-500mJ/cm2。
8.一种薄膜晶体管制备方法，其特征在于，包括：
在基板上形成多晶硅薄膜，并通过构图工艺形成TFT的有源层；
其中，所述多晶硅薄膜是通过权利要求1-7中任一项所述的低温多晶硅薄膜制备方法制得。
9.如权利要求8所述的薄膜晶体管制备方法，其特征在于，还包括：
在所述有源层的上方形成栅绝缘层、栅电极、层间绝缘层、以及源电极和漏电极；所述源电极和漏电极分别通过绝缘层过孔与所述有源层的两端相连。
10.如权利要求9所述的薄膜晶体管制备方法，其特征在于，在所述有源层的上方形成栅绝缘层、栅电极、层间绝缘层、以及源电极和漏电极的具体过程包括：
在所述有源层的上方沉积栅绝缘层；
利用掩模工艺对所述有源层两端的区域进行掺杂处理，从而在所述有源层的两端形成欧姆接触区域；
在所述栅绝缘层上方形成栅金属薄膜，并通过构图工艺形成栅电极的图案；
在所述栅电极上方形成层间绝缘层，并通过构图工艺形成贯穿所述栅绝缘层和层间绝缘层的绝缘层过孔，从而露出所述有源层两端的欧姆接触区域；
在所述层间绝缘层上方形成源漏金属薄膜，并通过构图工艺形成源电极和漏电极，所述源电极和漏电极分别通过所述绝缘层过孔与所述有源层两端的欧姆接触区域相连。
11.一种薄膜晶体管，其特征在于，所述薄膜晶体管采用权利要求8-10任一项所述的方法制得。
12.根据权利要求11所述的薄膜晶体管，其特征在于，该薄膜晶体管的有源层下方形成有缓冲层和导热绝缘层。
13.一种阵列基板，其特征在于，包含权利要求11或12所述的薄膜晶体管。
14.一种显示装置，其特征在于，包含权利要求13所述的阵列基板。
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