CN105374882A - 一种低温多晶硅薄膜晶体管及其制备方法 - Google Patents

一种低温多晶硅薄膜晶体管及其制备方法 Download PDF

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CN105374882A
CN105374882A CN201510964883.2A CN201510964883A CN105374882A CN 105374882 A CN105374882 A CN 105374882A CN 201510964883 A CN201510964883 A CN 201510964883A CN 105374882 A CN105374882 A CN 105374882A
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resilient coating
film transistor
contact hole
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卢改平
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US14/916,187 priority patent/US10192975B2/en
Priority to PCT/CN2016/071397 priority patent/WO2017107274A1/zh
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Abstract

本发明涉及一种低温多晶硅薄膜晶体管，包括：基板；形成于基板上的缓冲层；形成于缓冲层上的半导体层；形成于缓冲层、半导体层上的栅极绝缘层；形成于栅极绝缘层上的栅极；形成于栅极绝缘层、栅极上的介电层；以及形成于介电层上的钝化层；在钝化层、介电层与栅极绝缘层的内部分别形成有第一接触孔和第二接触孔，在第一接触孔与第二接触孔上分别形成源极与漏极；半导体层为低温多晶硅层，在缓冲层与半导体层之间还设有反射层和/或保温层。本发明还涉及上述薄膜晶体管的制备方法，主要利用沉积、光刻、蚀刻、激光照射等工艺方法制得上述薄膜晶体管。本发明的低温多晶硅薄膜晶体管能够得到较大的多晶硅晶粒尺寸，有助于获得较大的电子迁移率。

Description

一种低温多晶硅薄膜晶体管及其制备方法
技术领域
本发明涉及显示技术领域，具体是一种低温多晶硅薄膜晶体管及其制备方法。
背景技术
薄膜晶体管(TFT、ThinFilmTransistor)在液晶显示装置中作为开关元件使用，其具有较低的电源消耗、较小的体积和较低的驱动电压等特点，非常适用于电脑、笔记本及其它装置的显示设备。目前的液晶显示装置中，薄膜晶体管的活性层主要采用非晶硅(amorphoussilicon、a-Si)，但是采用非晶硅作为活性层的薄膜晶体管迁移率很低，难以满足外围电路的驱动要求，因此采用低温多晶硅(LowTemperaturePoly-silicon、LTPS)代替非晶硅的技术应运而生。
低温多晶硅的迁移率可高达至100cm2/V.S，能够满足外围电动的驱动要求，比非晶硅更加适用于薄膜晶体管的活性层，可实现比非晶硅薄膜晶体管更加小型化。制造低温多晶硅薄膜晶体管结构的原理主要是利用准分子镭射作为热源，投射于非晶硅结构的玻璃基板上，使非晶硅结构基板吸收准分子镭射的能量后，转变为多晶硅结构。
目前制造低温多晶硅薄膜晶体管的工艺方法主要包括不使用掩膜的传统性受激准分子激光退火方法(ExcimerLaserAnnel，简称ELA)和使用掩膜控制激光照射区域的连续侧面结晶化方法(SequentialLateralSolidification，简称SLS)。采用传统的ELA方法时，得到低温多晶硅的晶粒尺寸一般为0.1μm以下；采用SLS方法时，结晶化过程由照射区域的端部开始向内部诱导，最后才进行照射区域中心部的结晶化。在结晶化进行期间处于熔点以下的温度时，如果中心部的温度下降，就会进行成核，致使不能得到大的晶粒。可见，采用上述两种方法制造的多晶硅晶粒尺寸均较小，使多晶硅的实际应用受到限制。
发明内容
为克服现有技术的不足，本发明的目的在于提供一种低温多晶硅薄膜晶体管及其制备方法，通过该方法最终可制得晶粒尺寸较大的多晶硅，提高薄膜晶体管的电子迁移率，满足外围电路的驱动要求。
本发明提供一种低温多晶硅薄膜晶体管，所述薄膜晶体管包括：
基板；
形成于所述基板上的缓冲层；
形成于所述缓冲层上的半导体层；
形成于所述缓冲层、所述半导体层上的栅极绝缘层；
形成于所述栅极绝缘层上的栅极；
形成于所述栅极绝缘层、所述栅极上的介电层；
以及形成于所述介电层上的钝化层；
在所述钝化层、所述介电层与所述栅极绝缘层的内部分别形成有第一接触孔和第二接触孔，在所述第一接触孔与所述第二接触孔上分别形成源极与漏极；
其中，所述半导体层为低温多晶硅层，在所述缓冲层与所述半导体层之间还设有反射层和/或保温层。
进一步地，所述低温多晶硅薄膜晶体管包括像素薄膜晶体管和驱动薄膜晶体管，所述基板包括像素区和外围驱动区，所述像素区用于形成所述像素薄膜晶体管，所述外围驱动区用于形成所述驱动薄膜晶体管；
所述驱动薄膜晶体管包括位于所述外围驱动区内的基板，在所述外围驱动区内基板上依次形成的所述缓冲层、所述半导体层、所述栅极绝缘层、所述栅极、所述介电层以及所述钝化层；在所述钝化层、所述介电层与所述栅极绝缘层的内部分别形成第一接触孔和第二接触孔，在所述第一接触孔与所述第二接触孔上分别形成源极与漏极；其中，在所述缓冲层与所述半导体层之间设置所述反射层和/或所述保温层。
进一步地，所述像素薄膜晶体管包括：所述像素区内的基板，在所述像素区内基板上依次形成的所述缓冲层、所述半导体层、所述栅极绝缘层、所述栅极、所述介电层以及所述钝化层；在所述钝化层、所述介电层与所述栅极绝缘层的内部分别形成第一接触孔和第二接触孔，在所述第一接触孔与所述第二接触孔上分别形成源极与漏极。
进一步地，位于所述驱动薄膜晶体管内的所述半导体层的晶粒尺寸大于位于所述像素薄膜晶体管内的所述半导体层的晶粒尺寸。
进一步地，所述缓冲层包括形成于所述基板上方的第一缓冲层，在所述第一缓冲层上形成有所述反射层，在所述第一缓冲层、所述反射层上形成有第二缓冲层，且将所述反射层包覆于所述第二缓冲层内，在所述第二缓冲层上形成有所述半导体层。
优选地，所述反射层的材料为Mo、Al、AlNd、Cr、Cu、W、Ta或Ti中的任意一种或几种的组合，更优选地，所述反射层的材料为Mo，所述反射层为金属钼层。
优选地，所述第一缓冲层和所述第二缓冲层的材料为氮化硅或二氧化硅中的一种或两种组合。
优选地，所述第一缓冲层为氮化硅层，所述第二缓冲层为二氧化硅层。
进一步地，所述缓冲层包括依次形成于所述基板上方的第一缓冲层和第二缓冲层，在所述第二缓冲层上形成有所述保温层，所述半导体层形成于所述第二缓冲层、所述保温层上方。
进一步地，所述保温层为氧化铝层。
优选地，所述第一缓冲层和所述第二缓冲层的材料为氮化硅或二氧化硅中的一种或两种组合。
优选地，所述第一缓冲层为氮化硅层，所述第二缓冲层为二氧化硅层。
优选地，所述基板为玻璃基板。
除此之外，本发明还提供一种低温多晶硅薄膜晶体管的制备方法，包括以下步骤：
提供基板；
在所述基板上形成缓冲层；
在所述缓冲层上形成反射层和/或保温层；
在所述缓冲层、所述反射层和/或保温层上形成非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，所述多晶硅层为半导体层；
在所述缓冲层、所述半导体层上形成栅极绝缘层；
在所述栅极绝缘层上形成栅极；
在所述栅极绝缘层、所述栅极上形成介电层；
在所述介电层上形成钝化层；
在所述钝化层、所述介电层、所述栅极绝缘层内部形成第一接触孔和第二接触孔；
在所述第一接触孔和所述第二接触孔上分别形成源极和漏极。
优选地，在所述基板上先形成第一缓冲层，在所述第一缓冲层上形成所述反射层，并采用光刻、蚀刻工艺定义出所述反射层的图形；在所述第一缓冲层、所述反射层上沉积形成第二缓冲层，并将所述反射层包覆于所述第二缓冲层中；在所述第二缓冲层上沉积所述非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，得到所述半导体层。
优选地，所述反射层的材料为Mo、Al、AlNd、Cr、Cu、W、Ta或Ti中的任意一种或几种的组合，更优选地，所述反射层的材料为Mo，所述反射层为金属钼层。
优选地，所述第一缓冲层和所述第二缓冲层的材料为氮化硅或二氧化硅中的一种或两种组合。
优选地，所述第一缓冲层为氮化硅层，所述第二缓冲层为二氧化硅层。
优选地，在所述基板上依次沉积形成第一缓冲层、第二缓冲层；在所述第二缓冲层上沉积所述保温层，并采用光刻、蚀刻工艺定义出所述保温层的图形；在所述第二缓冲层、所述保温层上沉积形成所述非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，得到所述半导体层。
进一步地，所述保温层为氧化铝层。
优选地，所述第一缓冲层和所述第二缓冲层的材料为氮化硅或二氧化硅中的一种或两种组合。
优选地，所述第一缓冲层为氮化硅层，所述第二缓冲层为二氧化硅层。
可选地，形成所述低温薄膜晶体管各层结构的方法为化学气相沉积方法或物理气相沉积方法。
可选地，“在所述缓冲层、所述反射层和/或保温层上形成非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，所述多晶硅层为半导体层”的步骤中，所述“进行激光照射”的方法为准分子激光退火(ELA)或固相结晶(SolidPhaseCrystallization，SPC)方法。
优选地，所述基板为玻璃基板。
与现有技术相比，本发明的有益效果如下：
在本发明中，通过在非晶硅层下方设置反射层和/或保温层，使激光照射经过非晶硅层后，会从反射层再次反射回非晶硅层以增大晶粒结晶尺寸或者通过保温层的保温作用延长非晶硅层的结晶时间，获得更大尺寸的多晶硅晶粒。上述反射层和/或保温层仅设置在外围驱动区时，能够使通过激光照射得到的多晶硅晶粒尺寸大于像素区内多晶硅晶粒尺寸，而较大的晶粒尺寸有助于外围驱动区获得较大的电子迁移率，进而提升外围驱动区的驱动效率。
附图说明
图1至图11是实施例一低温多晶硅薄膜晶体管的制备流程。
图12至图21是实施例二低温多晶硅薄膜晶体管的制备流程。
具体实施方式
实施例一
本实施例提供一种低温多晶硅薄膜晶体管，该薄膜晶体管包括像素薄膜晶体管和驱动薄膜晶体管，该低温多晶硅薄膜晶体管的制备方法如下：
如图1所示，提供一玻璃基板1，该玻璃基板1包括位于左侧的像素区100和位于右侧的外围驱动区200。像素薄膜晶体管形成于像素区100内，作为驱动单元的驱动薄膜晶体管形成于外围驱动区200内。使用化学气相沉积(CVD，ChemicalVaporDeposition)方法在玻璃基板1上形成第一缓冲层21，该第一缓冲层为氮化硅层；接着，如图2所示，使用化学气相沉积方法在第一缓冲层21上沉积形成金属钼层31作为反射层，并采用光刻、蚀刻工艺定义出如图3所示的金属钼层的图形。通过光刻、蚀刻工艺，使得位于像素区100中的金属钼层被蚀刻掉，仅在外围驱动区200中设有金属钼层31；接着如图4所示，使用化学气相沉积方法在第一缓冲层21、金属钼层31上沉积形成第二缓冲层22，并将金属钼层31包覆在第二缓冲层22中，该第二缓冲层为二氧化硅层。
接着，如图5所示，使用化学气相沉积方法在第二缓冲层22上沉积形成非晶硅层41，并采用准分子激光退火(ELA)或固相结晶(SPC)方法使非晶硅层41转变为位于像素区100内的多晶硅层42和位于外围驱动区200内的多晶硅层43，再通过光刻和蚀刻工艺定义出如图6所示的多晶硅层的图形。在本实施例中，对于设置在外围驱动区内的非晶硅层而言，由于非晶硅层下方设有金属钼层，采用准分子激光退火(ELA)或固相结晶(SPC)方法进行结晶时，激光镭射能量穿过非晶硅层后会经由金属钼层反射回来，使非晶硅层达到保温效果，从而提高其结晶效果，得到晶粒尺寸更大的多晶硅层。由于像素区内的非晶硅层下方未设有金属钼层，因此经过结晶后，在外围驱动区内形成的多晶硅晶粒尺寸要大于在像素区内形成的多晶硅晶粒尺寸。可以理解的是，本实施例中金属钼层也可采用其他具有反射性质的材料代替，例如Al、AlNd、Cr、Cu、W、Ta或Ti中的任意一种或几种的组合。
接着，如图7所示，使用化学气相沉积方法在第二缓冲层22、多晶硅层42、多晶硅层43上沉积形成栅极绝缘层5，并将多晶硅层42、多晶硅层43包覆在栅极绝缘层5中。接着，使用化学气相沉积方法在栅极绝缘层5上沉积形成位于像素区100内的栅极61和位于外围驱动区100内的栅极62，并通过光刻、蚀刻工艺定义出如图8所示的栅极图形。
接着，如图9所示，使用化学气相沉积方法在栅极绝缘层5、栅极61、栅极62上沉积形成介电层7，并将栅极61、栅极62包覆在介电层7中，该介电层7为二氧化硅层。接着，使用化学气相沉积方法在介电层7上方沉积形成钝化层8，该钝化层8为氮化硅层。接着，通过光刻、蚀刻工艺针对钝化层8、介电层7、栅极绝缘层5进行定义，形成如图10所示的第一接触孔91、93和第二接触孔92、94，使第一接触孔和第二接触孔分别连通至多晶硅层表面。
接着，在第一接触孔91、93和第二接触孔92、94的上，使用化学气相沉积方法沉积形成导电层，并通过光刻和蚀刻工艺定义出如图10所示的源极95、97和漏极96、98，其中源极95和漏极96位于像素区100内，源极97和漏极98位于外围驱动区200内。
在本发明中，光刻是指通过一系列生产步骤，将晶圆表面薄膜的特定部分除去的工艺。在此之后，晶圆表面会留下带有微图形结构的薄膜。通过光刻工艺过程，最终在晶圆上保留的是特征图形部分。该技术属于本领域在制备薄膜晶体管时的常用工艺技术，在此不再赘述。
蚀刻工艺是指将材料使用化学反应或物理撞击作用而移除的技术。该技术属于本领域在制备薄膜晶体管时的常用工艺技术，在此不再赘述。
实施例二
本实施例提供一种低温多晶硅薄膜晶体管，该薄膜晶体管包括像素薄膜晶体管和驱动薄膜晶体管，该低温多晶硅薄膜晶体管的制备方法如下：
如图12所示，提供一玻璃基板1，该玻璃基板1包括位于左侧的像素区100和位于右侧的外围驱动区200。像素薄膜晶体管形成于像素区100内，作为驱动单元的驱动薄膜晶体管形成于外围驱动区200内。使用化学气相沉积方法在玻璃基板1上依次沉积形成第一缓冲层21、第二缓冲层22，该第一缓冲层为氮化硅层，该第二缓冲层为二氧化硅层；接着，如图13所示，使用化学气相沉积方法在第二缓冲层22上沉积形成氧化铝层32作为保温层，并采用光刻、蚀刻工艺定义出如图14所示的氧化铝层的图形。本实施例中，通过光刻、蚀刻工艺，使得位于像素区100的氧化铝层被蚀刻掉，仅在外围驱动区200中设有氧化铝层32。
接着，如图15所示，使用化学气相沉积方法在第二缓冲层22、氧化铝层32上沉积形成非晶硅层41，并将氧化铝层包覆在非晶硅层内。采用准分子激光退火(ELA)或固相结晶(SPC)方法使非晶硅层转变为位于像素区100内的多晶硅层42、位于外围驱动区200内的多晶硅层43，再通过光刻、蚀刻工艺定义出如图16所示的多晶硅层的图形，其中位于外围驱动区200中的多晶硅层42对应在氧化铝层32上方。在本实施例中，对于设置在外围驱动区的非晶硅层而言，由于非晶硅层下方设置具有保温作用的氧化铝层，采用准分子激光退火(ELA)或固相结晶(SPC)方法进行结晶时，通过氧化铝层的保温作用可使外围驱动区的非晶硅层进行结晶时间更长，从而获得比像素区的非晶硅层更大的晶粒尺寸。较大的晶粒尺寸有助于外围驱动区获得较大的电子迁移率，进而提升外围驱动区的驱动效率。
接着，如图17所示，使用化学气相沉积方法在第二缓冲层22、多晶硅层42、多晶硅层43上沉积形成栅极绝缘层5，并将多晶硅层42、多晶硅层43包覆在栅极绝缘层5中。接着，使用化学气相沉积方法在栅极绝缘层5上沉积形成位于像素区100内的栅极61、位于外围驱动区内的栅极62，并通过光刻、蚀刻工艺定义出如图18所示的栅极图形。
接着，如图19所示，使用化学气相沉积方法在栅极绝缘层5、栅极61、栅极62上沉积形成介电层7，并将栅极61、栅极62包覆在介电层7中，该介电层7为二氧化硅层。接着，使用化学气相沉积方法在介电层7上方沉积形成钝化层8，该钝化层8为氮化硅层。接着，通过光刻、蚀刻工艺针对钝化层8、介电层7、栅极绝缘层6进行定义，形成如图20所示的第一接触孔91、93和第二接触孔92、94，使第一接触孔91、93和第二接触孔92、94连通至多晶硅层42表面。
接着，在具有第一接触孔和第三接触孔的多晶硅层表面上，使用化学气相沉积方法沉积形成导电层，并通过光刻和蚀刻工艺定义出如图21所示的源极95、97和漏极96、98，其中源极95和漏极96位于像素区100内，源极97和漏极98位于外围驱动区200内。
在本发明中，光刻是指通过一系列生产步骤，将晶圆表面薄膜的特定部分除去的工艺。在此之后，晶圆表面会留下带有微图形结构的薄膜。通过光刻工艺过程，最终在晶圆上保留的是特征图形部分。该技术属于本领域在制备薄膜晶体管时的常用工艺技术，在此不再赘述。
蚀刻工艺是指将材料使用化学反应或物理撞击作用而移除的技术。该技术属于本领域在制备薄膜晶体管时的常用工艺技术，在此不再赘述。
以上所述为本发明的具体实施方式，其目的是为了清楚说明本发明而作的举例，并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (10)

1.一种低温多晶硅薄膜晶体管，其特征在于：所述低温多晶硅薄膜晶体管包括：基板；形成于所述基板上的缓冲层；形成于所述缓冲层上的半导体层；形成于所述缓冲层、所述半导体层上的栅极绝缘层；形成于所述栅极绝缘层上的栅极；形成于所述栅极绝缘层、所述栅极上的介电层；以及形成于所述介电层上的钝化层；在所述钝化层、所述介电层与所述栅极绝缘层的内部分别形成有第一接触孔和第二接触孔，在所述第一接触孔与所述第二接触孔上分别形成源极与漏极；所述半导体层为低温多晶硅层，在所述缓冲层与所述半导体层之间还设有反射层和/或保温层。
2.如权利要求1所述的低温多晶硅薄膜晶体管，其特征在于：所述低温多晶硅薄膜晶体管包括像素薄膜晶体管和驱动薄膜晶体管，所述基板包括像素区和外围驱动区，所述像素区用于形成所述像素薄膜晶体管，所述外围驱动区用于形成所述驱动薄膜晶体管；
所述驱动薄膜晶体管包括位于所述外围驱动区内的基板，在所述外围驱动区内基板上依次形成的所述缓冲层、所述半导体层、所述栅极绝缘层、所述栅极、所述介电层以及所述钝化层；在所述钝化层、所述介电层与所述栅极绝缘层的内部分别形成第一接触孔和第二接触孔，在所述第一接触孔与所述第二接触孔上分别形成源极与漏极；其中，在所述缓冲层与所述半导体层之间设置所述反射层和/或所述保温层。
3.如权利要求1所述的低温多晶硅薄膜晶体管，其特征在于：所述像素薄膜晶体管包括：所述像素区内的基板，在所述像素区内基板上依次形成的所述缓冲层、所述半导体层、所述栅极绝缘层、所述栅极、所述介电层以及所述钝化层；在所述钝化层、所述介电层与所述栅极绝缘层的内部分别形成第一接触孔和第二接触孔，在所述第一接触孔与所述第二接触孔上分别形成源极与漏极。
4.如权利要求2或3任一项所述的低温多晶硅薄膜晶体管，其特征在于：位于所述驱动薄膜晶体管内的所述半导体层的晶粒尺寸大于位于所述像素薄膜晶体管内的所述半导体层的晶粒尺寸。
5.如权利要求1所述的低温多晶硅薄膜晶体管，其特征在于：所述缓冲层包括形成于所述基板上方的第一缓冲层，在所述第一缓冲层上形成有所述反射层，在所述第一缓冲层、所述反射层上形成有第二缓冲层，且将所述反射层包覆于所述第二缓冲层内，在所述第二缓冲层上形成有所述半导体层。
6.如权利要求1所述的低温多晶硅薄膜晶体管，其特征在于：所述缓冲层包括依次形成于所述基板上方的第一缓冲层和第二缓冲层，在所述第二缓冲层上形成有所述保温层，所述半导体层形成于所述第二缓冲层、所述保温层上方。
7.一种低温多晶硅薄膜晶体管的制备方法，其特征在于，包括以下步骤：
提供基板；在所述基板上形成缓冲层；在所述缓冲层上形成反射层和/或保温层；在所述缓冲层、所述反射层和/或保温层上形成非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，所述多晶硅层为半导体层；在所述缓冲层、所述半导体层上形成栅极绝缘层；在所述栅极绝缘层上形成栅极；在所述栅极绝缘层、所述栅极上形成介电层；在所述介电层上形成钝化层；在所述钝化层、所述介电层、所述栅极绝缘层内部形成第一接触孔和第二接触孔；在所述第一接触孔和所述第二接触孔上分别形成源极和漏极。
8.如权利要求7所述的制备方法，其特征在于：在所述基板上先沉积第一缓冲层，在所述第一缓冲层上沉积所述反射层，并采用光刻、蚀刻工艺定义出所述反射层的图形；在所述第一缓冲层、所述反射层上沉积第二缓冲层，并将所述反射层包覆于所述第二缓冲层中；在所述第二缓冲层上沉积所述非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，得到所述半导体层。
9.如权利要求7所述的制备方法，其特征在于：在所述基板上依次沉积形成第一缓冲层、第二缓冲层；在所述第二缓冲层上沉积所述保温层，并采用光刻、蚀刻工艺定义出所述保温层的图形；在所述第二缓冲层、所述保温层上沉积所述非晶硅层，进行激光照射，使所述非晶硅层变为多晶硅层，得到所述半导体层。
10.如权利要求7所述的制备方法，其特征在于：所述进行激光照射的方法为准分子激光退火或固相结晶方法。
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