CN106128940B - 一种低温多晶硅薄膜的制备方法 - Google Patents
一种低温多晶硅薄膜的制备方法 Download PDFInfo
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- CN106128940B CN106128940B CN201610667656.8A CN201610667656A CN106128940B CN 106128940 B CN106128940 B CN 106128940B CN 201610667656 A CN201610667656 A CN 201610667656A CN 106128940 B CN106128940 B CN 106128940B
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- layer
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- silicon oxide
- silicon
- oxide layer
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 41
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 45
- 230000008021 deposition Effects 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000002425 crystallisation Methods 0.000 claims description 18
- 230000008025 crystallization Effects 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 230000001698 pyrogenic effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 description 16
- 238000005224 laser annealing Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
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CN201610667656.8A CN106128940B (zh) | 2016-08-15 | 2016-08-15 | 一种低温多晶硅薄膜的制备方法 |
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CN201610667656.8A CN106128940B (zh) | 2016-08-15 | 2016-08-15 | 一种低温多晶硅薄膜的制备方法 |
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CN106128940A CN106128940A (zh) | 2016-11-16 |
CN106128940B true CN106128940B (zh) | 2019-01-22 |
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CN201610667656.8A Active CN106128940B (zh) | 2016-08-15 | 2016-08-15 | 一种低温多晶硅薄膜的制备方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107195636B (zh) * | 2017-05-12 | 2020-08-18 | 惠科股份有限公司 | 显示面板、显示面板的制程和显示装置 |
CN107170756B (zh) * | 2017-05-24 | 2020-11-06 | 京东方科技集团股份有限公司 | 阵列基板、显示装置以及制备阵列基板的方法 |
CN112331556A (zh) * | 2020-11-02 | 2021-02-05 | 上海华虹宏力半导体制造有限公司 | 非晶硅薄膜成膜方法 |
CN113921379A (zh) * | 2021-09-29 | 2022-01-11 | 上海华虹宏力半导体制造有限公司 | 谐振器腔体薄膜的形成方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651311A (zh) * | 2011-12-20 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜 |
CN103489920A (zh) * | 2013-09-26 | 2014-01-01 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN105304641A (zh) * | 2015-09-24 | 2016-02-03 | 武汉华星光电技术有限公司 | 一种低温多晶硅tft阵列基板的制造方法 |
Family Cites Families (1)
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CN103000628B (zh) * | 2012-12-14 | 2015-04-22 | 京东方科技集团股份有限公司 | 显示装置、阵列基板及其制作方法 |
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- 2016-08-15 CN CN201610667656.8A patent/CN106128940B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102651311A (zh) * | 2011-12-20 | 2012-08-29 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜 |
CN103489920A (zh) * | 2013-09-26 | 2014-01-01 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示装置 |
CN105304641A (zh) * | 2015-09-24 | 2016-02-03 | 武汉华星光电技术有限公司 | 一种低温多晶硅tft阵列基板的制造方法 |
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Effective date of registration: 20201216 Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 430070 C5 Biological City, 666 High-tech Avenue, Donghu Development Zone, Wuhan City, Hubei Province Patentee before: Wuhan China Star Optoelectronics Technology Co.,Ltd. |
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Effective date of registration: 20210309 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |
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