CN104658891B - 低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置 - Google Patents

低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置 Download PDF

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CN104658891B
CN104658891B CN201510095020.6A CN201510095020A CN104658891B CN 104658891 B CN104658891 B CN 104658891B CN 201510095020 A CN201510095020 A CN 201510095020A CN 104658891 B CN104658891 B CN 104658891B
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silicon oxide
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CN104658891A (zh
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牛亚男
刘超
贺增胜
陈蕾
张玉军
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BOE Technology Group Co Ltd
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Abstract

本发明公开了一种低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置，由于非晶硅薄膜上覆盖有氧化硅薄膜，利用氧化硅薄膜作为保温层，使非晶硅薄膜的温度可以得到保持，有利于非晶硅的晶化。由于预设区域是要形成低温多晶硅薄膜的区域，因此位于预设区域内的氧化硅薄膜的厚度较厚，以较好的保持晶化处理时预设区域内的非晶薄膜的温度，从而保证预设区域内形成的多晶硅的晶粒尺寸较大；并且，在除了预设区域之外其它区域内的氧化硅薄膜的厚度较薄，可以避免其它区域内的非晶硅薄膜的温度的温度急剧下降、造成预设区域边界处晶化环境不稳定，从而影响预设区域边界处形成的多晶硅的晶粒尺寸的均匀性。

Description

低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置
技术领域
本发明涉及多晶硅技术领域，特别涉及一种低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置。
背景技术
在各种显示装置的像素单元中，通过施加驱动电压来驱动显示装置的薄膜晶体管(Thin Film Transistor，TFT)被大量使用。在TFT的有源层一直使用稳定性和加工性较好的非晶硅(a-Si)材料，但是a-Si材料的载流子迁移率较低，不能满足大尺寸、高分辨率显示器件的要求，特别是不能满足下一代有源矩阵式有机发光显示器件(Active MatrixOrganic Light Emitting Device，AMOLED)的要求。与非晶硅(a-Si)薄膜晶体管相比，多晶硅尤其是低温多晶硅薄膜晶体管具有更高的电子迁移率、更好的液晶特性以及较少的漏电流，已经逐渐取代非晶硅薄膜晶体管，成为薄膜晶体管的主流。
多晶硅薄膜的制备工艺可分为两大类：一类是高温工艺，制备过程中温度高于600℃，衬底使用昂贵的石英；另一类是低温工艺，整个加工工艺温度低于600℃，可用廉价玻璃作衬底，因此，低温多晶硅(Low Temperature Poly Silicon，LTPS)技术已逐渐取代非晶硅技术成为薄膜晶体管研发的主流，在低温多晶硅的制备中，多晶硅的晶化问题一直是低温多晶硅领域研究的重点。
目前业界成熟的低温多晶硅薄膜制备工艺主要有固相晶化(Solid PhaseCrystallization，SPC)、金属诱导横向晶化(Metal—Induced Lateral Crystallization，MILC)、准分子激光退火(Excimer Laser Annealing，ELA)等技术。其中，ELA技术以其产品较高的迁移率及产率，被业界普遍用于非晶硅的晶化。准分子激光退火是将高功率的激光束作用于待晶化非晶硅薄膜表面，由于硅极强的紫外光吸收能力，在极短的时间内(约50ns～150ns)可使a-Si薄膜表面在瞬间达到1000℃以上的高温而变成熔融状态，激光脉冲停止后，熔融状态的非晶硅冷却结晶变为多晶硅。采用准分子激光退火技术制备的多晶硅薄膜晶粒大、空间选择性好，掺杂效率高、晶内缺陷少、电学特性好、迁移率较高，是目前综合性能最好的低温多晶硅薄膜。
目前，采用准分子激光退火工艺制备低温多晶硅薄膜的传统方法一般为:先在缓冲层上沉积一层非晶硅(a-Si)薄膜层，然后对非晶硅薄膜的表面进行处理后，采用准分子激光退火工艺对该非晶硅薄膜进行晶化处理就可以得到低温多晶硅薄膜。但是在采用准分子激光退火工艺对该非晶硅薄膜进行晶化处理的过程中，由于晶粒尺寸对激光功率以及制备时气氛环境等非常敏感，因此制备得到的多晶硅薄膜膜层的均匀性较差，从而使得由该多晶硅薄膜制备的产品(如薄膜晶体管等)性能差异较大。
综上所述，目前采用ELA技术制备的多晶硅薄膜的均匀性较差，从而影响由该多晶硅薄膜制备的产品的性能。
发明内容
有鉴于此，本发明实施例提供了一种低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置，用于解决采用现有的ELA技术制备的多晶硅薄膜均匀性较差的问题。
因此，本发明实施例提供了一种低温多晶硅薄膜的制备方法，包括：
在衬底基板上形成非晶硅薄膜；
形成覆盖所述非晶硅薄膜的氧化硅薄膜的图形，其中，位于预设区域内的所述氧化硅薄膜的厚度大于除了所述预设区域之外其它区域内的氧化硅薄膜的厚度；
采用准分子激光照射所述氧化硅薄膜，使所述非晶硅薄膜形成初始多晶硅薄膜，其中，位于所述预设区域内的初始多晶硅薄膜为目标低温多晶硅薄膜。
较佳地，在本发明实施例提供的上述制备方法中，在所述非晶硅薄膜形成初始多晶硅薄膜之后，还包括：
去除所述初始多晶硅薄膜上方的氧化硅薄膜；
对所述初始多晶硅薄膜进行氢化处理；
对经过氢化处理后的初始多晶硅薄膜进行构图，保留位于所述预设区域内的初始多晶硅薄膜，去除除了所述预设区域之外其它区域内的初始多晶硅薄膜，得到目标低温多晶硅薄膜。
较佳地，在本发明实施例提供的上述制备方法中，位于所述预设区域内的氧化硅薄膜的厚度为5nm～20nm。
较佳地，在本发明实施例提供的上述制备方法中，位于除了所述预设区域之外其它区域内的氧化硅薄膜的厚度是位于所述预设区域内的所述氧化硅薄膜的厚度1/2。
较佳地，在本发明实施例提供的上述制备方法中，在去除所述初始多晶硅薄膜上方的氧化硅薄膜之后，对经过氢化处理后的初始多晶硅薄膜进行构图之前，还包括：
对所述初始多晶硅薄膜表面进行光滑化处理。
较佳地，在本发明实施例提供的上述制备方法中，所述氧化硅薄膜的材料为二氧化硅。
较佳地，在本发明实施例提供的上述制备方法中，形成覆盖所述非晶硅薄膜的氧化硅薄膜的图形，具体包括：
在所述非晶硅薄膜上形成氧化硅薄膜；
在所述氧化硅薄膜上涂覆光刻胶层，使用掩膜板对所述光刻胶层进行曝光显影，得到光刻胶完全保留区域和光刻胶部分保留区域，且所述光刻胶完全保留区域对应于所述预设区域；
对光刻胶完全保留区域和光刻胶部分保留区域进行刻蚀，形成氧化硅薄膜的图形。
较佳地，在本发明实施例提供的上述制备方法中，在形成非晶硅薄膜之后，形成覆盖所述非晶硅薄膜的氧化硅薄膜的图形之前，还包括：
对所述非晶硅薄膜的表面进行氢化处理和清洗处理。
相应地，本发明实施例还提供了一种低温多晶硅薄膜，所述低温多晶硅薄膜为本发明实施例提供的上述任一种制备方法制备而成。
相应地，本发明实施例还提供了一种薄膜晶体管的制备方法，包括在衬底基板上形成相互绝缘的有源层和栅电极的图形，以及分别与所述有源层电连接的源电极和漏电极的图形，所述有源层为低温多晶硅薄膜，所述低温多晶硅薄膜采用本发明实施例提供的上述任一种制备方法制备而成，且所述预设区域为所述有源层所在的区域。
相应地，本发明实施例还提供了一种薄膜晶体管，所述薄膜晶体管由本发明实施例提供的上述薄膜晶体管的制备方法制备而成。
相应地，本发明实施例还提供了一种显示面板，包括本发明实施例提供的上述薄膜晶体管。
相应地，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述显示面板。
本发明实施例提供的上述低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置，由于非晶硅薄膜上覆盖有氧化硅薄膜，且位于预设区域内的氧化硅薄膜的厚度大于除了预设区域之外其它区域内的氧化硅薄膜的厚度，这样在采用准分子激光对多晶硅薄膜进行晶化处理时，利用氧化硅薄膜作为保温层，使非晶硅薄膜的温度可以得到保持，有利于非晶硅的晶化。由于预设区域是要形成低温多晶硅薄膜的区域，因此位于预设区域内的氧化硅薄膜的厚度较厚，以较好的保持晶化处理时预设区域内的非晶薄膜的温度，从而保证预设区域内形成的多晶硅的晶粒尺寸较大；并且，在除了预设区域之外其它区域内的氧化硅薄膜的厚度较薄，可以避免其它区域内的非晶硅薄膜的温度的温度急剧下降、造成预设区域边界处晶化环境不稳定，从而影响预设区域边界处形成的多晶硅的晶粒尺寸的均匀性。因此，本发明实施例提供的上述方法，不仅可以保证形成的低温多晶硅薄膜的晶粒尺寸较大，并且可以保证低温多晶硅薄膜的均匀性。
附图说明
图1为本发明实施例提供的低温多晶硅薄膜的制备方法的流程示意图；
图2为本发明实施例提供的形成氧化硅薄膜的图形的流程示意图；
图3a至图3j分别为采用具体实施例提供的制备方法执行各步骤后的剖面结构示意图。
具体实施方式
下面结合附图，对本发明实施例提供的低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置的具体实施方式进行详细地说明。
其中，附图中各膜层厚度和形状不反映真实比例，目的只是示意说明本发明内容。
本发明实施例提供的一种低温多晶硅薄膜的制备方法，如图1所示，具体可以包括以下步骤：
S101、在衬底基板上形成非晶硅薄膜；
S102、形成覆盖非晶硅薄膜的氧化硅薄膜的图形，其中，位于预设区域内的氧化硅薄膜的厚度大于除了预设区域之外其它区域内的氧化硅薄膜的厚度；
S103、采用准分子激光照射氧化硅薄膜，使非晶硅薄膜形成初始多晶硅薄膜，其中，位于预设区域内的初始多晶硅薄膜为目标低温多晶硅薄膜。
本发明实施例提供的上述低温多晶硅薄膜的制备方法，由于非晶硅薄膜上覆盖有氧化硅薄膜，且位于预设区域内的氧化硅薄膜的厚度大于除了预设区域之外其它区域内的氧化硅薄膜的厚度，这样在采用准分子激光对多晶硅薄膜进行晶化处理时，利用氧化硅薄膜作为保温层，使非晶硅薄膜的温度可以得到保持，有利于非晶硅的晶化。由于预设区域是要形成低温多晶硅薄膜的区域，因此位于预设区域内的氧化硅薄膜的厚度较厚，以较好的保持晶化处理时预设区域内的非晶薄膜的温度，从而保证预设区域内形成的多晶硅的晶粒尺寸较大；并且，在除了预设区域之外其它区域内的氧化硅薄膜的厚度较薄，可以避免其它区域内的非晶硅薄膜的温度的温度急剧下降、造成预设区域边界处晶化环境不稳定，从而影响预设区域边界处形成的多晶硅的晶粒尺寸的均匀性。因此，本发明实施例提供的上述方法，不仅可以保证形成的低温多晶硅薄膜的晶粒尺寸较大，并且可以保证低温多晶硅薄膜的均匀性。
需要说明的是，在本发明实施例提供的上述制备方法中，衬底基板可以仅是一块基板，当然也可以是上面形成有其它膜层的基板，在此不作限定。
进一步地，在具体实施时，在本发明实施例提供的上述制备方法中，衬底基板可以指上面形成有缓冲层的基板，在此不作限定。
进一步地，在具体实施时，在本发明实施例提供的上述制备方法中，在步骤S103使非晶硅薄膜形成初始多晶硅薄膜之后，还可以包括：
去除初始多晶硅薄膜上方的氧化硅薄膜；
对初始多晶硅薄膜进行氢化处理；
对经过氢化处理后的初始多晶硅薄膜进行构图，保留位于预设区域内的初始多晶硅薄膜，去除除了预设区域之外其它区域内的初始多晶硅薄膜，得到目标低温多晶硅薄膜。
较佳地，在本发明实施例提供的上述制备方法中，位于预设区域内的氧化硅薄膜的厚度控制在5nm～20nm之间效果最佳，当然也可以根据实际制备需要设置为其他数值，在此不作限定。
具体地，在具体实施时，在本发明实施例提供的上述制备方法中，位于除了预设区域之外其它区域内的氧化硅薄膜的厚度是位于预设区域内的氧化硅薄膜的厚度的1/4-3/4。较佳地，在具体实施是，位于除了预设区域之外其它区域内的氧化硅薄膜的厚度是位于预设区域内的氧化硅薄膜的厚度的1/2。
较佳地，为了保证后期制备的低温多晶硅薄膜的表面光滑，在本发明实施例提供的上述制备方法中，在去除初始多晶硅薄膜上方的氧化硅薄膜之后，对经过氢化处理后的初始多晶硅薄膜进行构图之前，还可以包括：
对初始多晶硅薄膜表面进行光滑化处理。
较佳地，在本发明实施例提供的上述制备方法中，氧化硅薄膜的材料为二氧化硅(SiO2)。
较佳地，在本发明实施例提供的上述制备方法中，形成覆盖非晶硅薄膜的氧化硅薄膜的图形，如图2所示，具体可以包括以下步骤：
S201、在非晶硅薄膜上形成氧化硅薄膜；
S202、在氧化硅薄膜上涂覆光刻胶层，使用掩膜板对光刻胶层进行曝光显影，得到光刻胶完全保留区域和光刻胶部分保留区域，且光刻胶完全保留区域对应于预设区域；
S203、对光刻胶完全保留区域和光刻胶部分保留区域进行刻蚀，形成氧化硅薄膜的图形。
较佳地，在本发明实施例提供的上述制备方法中，为了保证低温多晶硅薄膜的质量，在形成非晶硅薄膜之后，形成覆盖非晶硅薄膜的氧化硅薄膜的图形之前，还可以包括：
对非晶硅薄膜的表面进行氢化处理和清洗处理。
下面通过一个具体的实施例说明本发明实施例提供的上述制备方法。具体地，可以包括以下步骤：
(1)在衬底基板1上形成非晶硅薄膜01，如图3a所示；
(2)在非晶硅薄膜01上形成氧化硅薄膜02，如图3b所示；
具体地，在具体实施时，可以采用沉积方法在非晶硅薄膜上形成氧化硅薄膜，在此不作限定。
进一步地，氧化硅薄膜的材料为二氧化硅(SiO2)，氧化硅薄膜的厚度控制在5nm～20nm之间。
较佳地，为了保证低温多晶硅薄膜的质量，在步骤(1)之后，在步骤(2)之前，还应该对对非晶硅薄膜的表面进行氢化处理和清洗处理。
(3)在氧化硅薄膜02上涂覆光刻胶层03，如图3c所示；
具体地，在具体实施时，光刻胶层的材料可以为正性光刻胶，也可以为负性光刻胶，在此不作限定。
(4)使用掩膜板对光刻胶层03进行曝光显影，得到光刻胶完全保留区域A和光刻胶部分保留区域B，且光刻胶完全保留区域A对应于预设区域S，如图3d所示；
(5)对光刻胶完全保留区域A和光刻胶部分保留区域B进行等厚度刻蚀，直到光刻胶部分保留区域B内的氧化硅薄膜02的厚度为光刻胶完全保留区域A内的氧化硅薄膜02的厚度的1/2左右停止刻蚀，得到在光刻胶完全保留区域A仍然残留有光刻胶层03的形成氧化硅薄膜02的图形，如图3e所示；
(6)去除氧化硅薄膜02上残留的光刻胶层03，得到氧化硅薄膜02的图形，如图3f所示；
(7)采用准分子激光照射氧化硅薄膜02，使非晶硅薄膜01形成初始多晶硅薄膜04，如图3g和图3h所示；其中，图3g为激光开始照射时的结构图，图3h为已经形成初始多晶硅薄膜04的结构图；
(8)去除初始多晶硅薄膜04上方的氧化硅薄膜02，并对初始多晶硅薄膜进行氢化处理，如图3i所示；
(9)对经过氢化处理后的初始多晶硅薄膜04进行构图，保留位于预设区域S内的初始多晶硅薄膜04，去除除了预设区域S之外其它区域内的初始多晶硅薄膜04，得到目标低温多晶硅薄膜05，如图3j所示。
上述实施例通过上述步骤(1)至(9)，在预设的区域内制得目标低温多晶硅薄膜。由于在制备过程中，在非晶硅薄膜上覆盖有氧化硅薄膜，且位于预设区域内的氧化硅薄膜的厚度大于除了预设区域之外其它区域内的氧化硅薄膜的厚度，这样在采用准分子激光对多晶硅薄膜进行晶化处理时，利用氧化硅薄膜作为保温层，使非晶硅薄膜的温度可以得到保持，有利于非晶硅的晶化。由于预设区域是要形成低温多晶硅薄膜的区域，因此位于预设区域内的氧化硅薄膜的厚度较厚，以较好的保持晶化处理时预设区域内的非晶薄膜的温度，从而保证预设区域内形成的多晶硅的晶粒尺寸较大；并且，在除了预设区域之外其它区域内的氧化硅薄膜的厚度较薄，可以避免其它区域内的非晶硅薄膜的温度的温度急剧下降、造成预设区域边界处晶化环境不稳定，从而影响预设区域边界处形成的多晶硅的晶粒尺寸的均匀性。因此，本发明实施例提供的上述方法，不仅可以保证形成的低温多晶硅薄膜的晶粒尺寸较大，并且可以保证低温多晶硅薄膜的均匀性。
基于同一发明构思，本发明实施例还提供了一种低温多晶硅薄膜，由于该低温多晶硅薄膜由本发明实施例提供的上述任一种制备方法制备而成，因此该低温多晶硅薄膜不仅晶粒尺寸较大，而且均匀性较佳。
基于同一发明构思，本发明实施例还提供了一种薄膜晶体管的制备方法，包括在衬底基板上形成相互绝缘的有源层和栅电极的图形，以及分别与有源层电连接的源电极和漏电极的图形；其中，有源层为低温多晶硅薄膜，该低温多晶硅薄膜采用本发明实施例提供的上述任一种制备方法制备而成，且该预设区域为有源层所在的区域。由于该薄膜晶体管的制备方法解决问题的原理与前述一种低温多晶硅薄膜的制备方法相似，因此该薄膜晶体管的制备方法的实施可以参见前述低温多晶硅薄膜的制备方法的实施，重复之处不再赘述。
基于同一发明构思，本发明实施例还提供了一种薄膜晶体管，由于该薄膜晶体管由本发明实施例提供的上述薄膜晶体管的制备方法制备而成，因此该低温多晶硅薄膜不仅晶粒尺寸较大，而且均匀性较佳。
基于同一发明构思，本发明实施例还提供了一种显示面板，包括本发明实施例提供的上述薄膜晶体管。优选的，该薄膜晶体管可作为开关元件来控制像素，或是用作驱动元件来驱动像素。
基于同一发明构思，本发明实施例还提供了一种显示装置，包括本发明实施例提供的上述显示面板。该显示装置可以为：液晶显示面板、电子纸、有机发光二极管(OrganicLight Emitting Diode，OLED)面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
其中，该显示装置适用于液晶显示器、有机电致发光显示器、无机电致发光显示器、有源矩阵有机发光二极管显示器(Active Matrix/Organic Light Emitting Diode，AMOLED)等多种类型的显示器。
本发明实施例提供的一种低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置，由于非晶硅薄膜上覆盖有氧化硅薄膜，且位于预设区域内的氧化硅薄膜的厚度大于除了预设区域之外其它区域内的氧化硅薄膜的厚度，这样在采用准分子激光对多晶硅薄膜进行晶化处理时，利用氧化硅薄膜作为保温层，使非晶硅薄膜的温度可以得到保持，有利于非晶硅的晶化。由于预设区域是要形成低温多晶硅薄膜的区域，因此位于预设区域内的氧化硅薄膜的厚度较厚，以较好的保持晶化处理时预设区域内的非晶薄膜的温度，从而保证预设区域内形成的多晶硅的晶粒尺寸较大；并且，在除了预设区域之外其它区域内的氧化硅薄膜的厚度较薄，可以避免其它区域内的非晶硅薄膜的温度的温度急剧下降、造成预设区域边界处晶化环境不稳定，从而影响预设区域边界处形成的多晶硅的晶粒尺寸的均匀性。因此，本发明实施例提供的上述方法，不仅可以保证形成的低温多晶硅薄膜的晶粒尺寸较大，并且可以保证低温多晶硅薄膜的均匀性。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

1.一种低温多晶硅薄膜的制备方法，其特征在于，包括：
在衬底基板上形成非晶硅薄膜；
形成覆盖所述非晶硅薄膜的氧化硅薄膜的图形，其中，位于预设区域内的所述氧化硅薄膜的厚度大于除了所述预设区域之外其它区域内的氧化硅薄膜的厚度；其中，位于所述预设区域内的氧化硅薄膜的厚度为5nm～20nm；
采用准分子激光照射所述氧化硅薄膜，使所述非晶硅薄膜形成初始多晶硅薄膜，其中，位于所述预设区域内的初始多晶硅薄膜为目标低温多晶硅薄膜；
在所述非晶硅薄膜形成初始多晶硅薄膜之后，还包括：
去除所述初始多晶硅薄膜上方的氧化硅薄膜；
对所述初始多晶硅薄膜进行氢化处理；
对经过氢化处理后的初始多晶硅薄膜进行构图，保留位于所述预设区域内的初始多晶硅薄膜，去除除了所述预设区域之外其它区域内的初始多晶硅薄膜，得到目标低温多晶硅薄膜。
2.如权利要求1所述的制备方法，其特征在于，位于除了所述预设区域之外其它区域内的氧化硅薄膜的厚度是位于所述预设区域内的所述氧化硅薄膜的厚度1/2。
3.如权利要求1所述的制备方法，其特征在于，在去除所述初始多晶硅薄膜上方的氧化硅薄膜之后，对经过氢化处理后的初始多晶硅薄膜进行构图之前，还包括：
对所述初始多晶硅薄膜表面进行光滑化处理。
4.权利要求1所述的制备方法，其特征在于，所述氧化硅薄膜的材料为二氧化硅。
5.如权利要求1-4任一项所述的制备方法，其特征在于，形成覆盖所述非晶硅薄膜的氧化硅薄膜的图形，具体包括：
在所述非晶硅薄膜上形成氧化硅薄膜；
在所述氧化硅薄膜上涂覆光刻胶层，使用掩膜板对所述光刻胶层进行曝光显影，得到光刻胶完全保留区域和光刻胶部分保留区域，且所述光刻胶完全保留区域对应于所述预设区域；
对光刻胶完全保留区域和光刻胶部分保留区域进行刻蚀，形成氧化硅薄膜的图形。
6.如权利要求1-4任一项所述的制备方法，其特征在于，在形成非晶硅薄膜之后，形成覆盖所述非晶硅薄膜的氧化硅薄膜的图形之前，还包括：
对所述非晶硅薄膜的表面进行氢化处理和清洗处理。
7.一种低温多晶硅薄膜，其特征在于，所述低温多晶硅薄膜由权利要求1-6任一项所述的制备方法制备而成。
8.一种薄膜晶体管的制备方法，包括在衬底基板上形成相互绝缘的有源层和栅电极的图形，以及分别与所述有源层电连接的源电极和漏电极的图形，其特征在于，所述有源层为低温多晶硅薄膜，所述低温多晶硅薄膜采用如权利要求1-6任一项所述的制备方法制备而成，且所述预设区域为所述有源层所在的区域。
9.一种薄膜晶体管，其特征在于，所述薄膜晶体管由权利要求8所述的制备方法制备而成。
10.一种显示面板，其特征在于，包括如权利要求9所述的薄膜晶体管。
11.一种显示装置，其特征在于，包括如权利要求10所述的显示面板。
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