KR101126282B1 - 박막 트랜지스터, 박막 트랜지스터 기판 및 그 제조방법 - Google Patents

박막 트랜지스터, 박막 트랜지스터 기판 및 그 제조방법 Download PDF

Info

Publication number
KR101126282B1
KR101126282B1 KR1020050024638A KR20050024638A KR101126282B1 KR 101126282 B1 KR101126282 B1 KR 101126282B1 KR 1020050024638 A KR1020050024638 A KR 1020050024638A KR 20050024638 A KR20050024638 A KR 20050024638A KR 101126282 B1 KR101126282 B1 KR 101126282B1
Authority
KR
South Korea
Prior art keywords
channel layer
thermal gradient
region
substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050024638A
Other languages
English (en)
Korean (ko)
Other versions
KR20060044702A (ko
Inventor
친-룽 팅
청-츠 왕
Original Assignee
치 메이 옵토일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 치 메이 옵토일렉트로닉스 코포레이션 filed Critical 치 메이 옵토일렉트로닉스 코포레이션
Publication of KR20060044702A publication Critical patent/KR20060044702A/ko
Application granted granted Critical
Publication of KR101126282B1 publication Critical patent/KR101126282B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020050024638A 2004-03-26 2005-03-24 박막 트랜지스터, 박막 트랜지스터 기판 및 그 제조방법 Expired - Fee Related KR101126282B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093108422A TWI240950B (en) 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
TW093108422 2004-03-26

Publications (2)

Publication Number Publication Date
KR20060044702A KR20060044702A (ko) 2006-05-16
KR101126282B1 true KR101126282B1 (ko) 2012-03-19

Family

ID=34988722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050024638A Expired - Fee Related KR101126282B1 (ko) 2004-03-26 2005-03-24 박막 트랜지스터, 박막 트랜지스터 기판 및 그 제조방법

Country Status (4)

Country Link
US (3) US7199399B2 (enExample)
JP (1) JP5049467B2 (enExample)
KR (1) KR101126282B1 (enExample)
TW (1) TWI240950B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
TWI361492B (en) 2008-07-25 2012-04-01 Au Optronics Corp Thin film transistor substrate, electric apparatus, and method for fabricating the same
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US8735207B2 (en) * 2011-04-05 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
KR101980466B1 (ko) * 2015-03-05 2019-05-20 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 삼차원 물체 생성 기법
CN104900713B (zh) * 2015-06-15 2017-12-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板、显示装置
KR102526615B1 (ko) * 2018-09-18 2023-04-27 엘지디스플레이 주식회사 박막 트랜지스터와, 이를 포함하는 기판 내장형 드라이버 및 표시 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030193068A1 (en) 2002-04-11 2003-10-16 Wen-Chang Yeh Thin film transistor (tft) and method for fabricating the tft

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066416A (ja) * 1983-09-22 1985-04-16 Matsushita Electric Ind Co Ltd 半導体集積回路基体の製造方法
JPH081892B2 (ja) * 1987-06-03 1996-01-10 松下電子工業株式会社 半導体装置の製造方法
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
JP3969510B2 (ja) * 1998-08-31 2007-09-05 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタアレイ基板および液晶表示装置
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP2001135573A (ja) * 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP2003008024A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及び半導体装置及び表示装置
AU2003302834A1 (en) * 2002-12-09 2004-06-30 Samsung Electronics Co., Ltd. Display pixel, display apparatus having an image pixel and method of manufacturing display device
JP4593094B2 (ja) * 2003-08-21 2010-12-08 日本電気株式会社 液晶表示装置及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030193068A1 (en) 2002-04-11 2003-10-16 Wen-Chang Yeh Thin film transistor (tft) and method for fabricating the tft

Also Published As

Publication number Publication date
US20070114535A1 (en) 2007-05-24
KR20060044702A (ko) 2006-05-16
TW200532744A (en) 2005-10-01
US20050211985A1 (en) 2005-09-29
US7432140B2 (en) 2008-10-07
US8139175B2 (en) 2012-03-20
JP5049467B2 (ja) 2012-10-17
TWI240950B (en) 2005-10-01
US20080316386A1 (en) 2008-12-25
JP2005286330A (ja) 2005-10-13
US7199399B2 (en) 2007-04-03

Similar Documents

Publication Publication Date Title
US8139175B2 (en) Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
US6410373B1 (en) Method of forming polysilicon thin film transistor structure
KR100390523B1 (ko) 실리콘 박막 결정화 방법
US7157737B2 (en) Structures with seeded single-crystal domains
JP2002329667A (ja) シリコン薄膜結晶化方法および薄膜トランジスタの製造方法
US6531348B2 (en) Method for crystallizing amorphous silicon and fabricating thin film transistor using crystallized silicon
CN102064197B (zh) 薄膜晶体管、其制造方法和有机发光二极管显示器装置
US6278130B1 (en) Liquid crystal display and fabricating method thereof
TWI520219B (zh) 形成多晶矽層的方法和製造薄膜電晶體的方法
TW200423407A (en) Fabricating method of low temperature poly-silicon film and low temperature poly-silicon thin film transistor
JP4084039B2 (ja) 薄膜半導体装置及びその製造方法
TW201214520A (en) Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor
JP2001345451A (ja) 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法
US7508037B2 (en) Polycrystalline silicon liquid crystal display device and fabrication method thereof
TW200408136A (en) Electronic devices and their manufacture
CN103311129A (zh) 薄膜晶体管阵列基板及其沟道形成方法
KR100504538B1 (ko) 비정질 실리콘의 결정화 방법 및 이를 이용한액정표시장치의제조방법
JP4115590B2 (ja) 半導体装置の作製方法
KR100721957B1 (ko) 다결정 실리콘층, 상기 다결정 실리콘층을 이용한 평판표시 장치 및 이들을 제조하는 방법
KR20070024018A (ko) 박막트랜지스터 및 그 제조 방법
KR100439347B1 (ko) 실리콘 박막의 결정화 방법 및 이를 이용한 반도체 소자제조 방법
KR100751315B1 (ko) 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 이를구비한 평판 디스플레이 소자
JP3433903B2 (ja) 半導体装置の製造方法
KR20050016960A (ko) 전자 디바이스 및 그 제조 방법, 액티브 매트릭스디스플레이 디바이스
JP2000260713A (ja) 多結晶シリコン膜の形成方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P18-X000 Priority claim added or amended

St.27 status event code: A-2-2-P10-P18-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P14-X000 Amendment of ip right document requested

St.27 status event code: A-5-5-P10-P14-nap-X000

P16-X000 Ip right document amended

St.27 status event code: A-5-5-P10-P16-nap-X000

Q16-X000 A copy of ip right certificate issued

St.27 status event code: A-4-4-Q10-Q16-nap-X000

FPAY Annual fee payment

Payment date: 20150225

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160307

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160307

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000