JP2005286330A5 - - Google Patents

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Publication number
JP2005286330A5
JP2005286330A5 JP2005087085A JP2005087085A JP2005286330A5 JP 2005286330 A5 JP2005286330 A5 JP 2005286330A5 JP 2005087085 A JP2005087085 A JP 2005087085A JP 2005087085 A JP2005087085 A JP 2005087085A JP 2005286330 A5 JP2005286330 A5 JP 2005286330A5
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JP
Japan
Prior art keywords
channel layer
region
insulating layer
temperature gradient
lateral width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005087085A
Other languages
English (en)
Japanese (ja)
Other versions
JP5049467B2 (ja
JP2005286330A (ja
Filing date
Publication date
Priority claimed from TW093108422A external-priority patent/TWI240950B/zh
Application filed filed Critical
Publication of JP2005286330A publication Critical patent/JP2005286330A/ja
Publication of JP2005286330A5 publication Critical patent/JP2005286330A5/ja
Application granted granted Critical
Publication of JP5049467B2 publication Critical patent/JP5049467B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005087085A 2004-03-26 2005-03-24 薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法 Expired - Fee Related JP5049467B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW093108422A TWI240950B (en) 2004-03-26 2004-03-26 Thin film transistor, thin film transistor substrate, and methods for manufacturing the same
TW093108422 2004-03-26

Publications (3)

Publication Number Publication Date
JP2005286330A JP2005286330A (ja) 2005-10-13
JP2005286330A5 true JP2005286330A5 (enExample) 2008-04-24
JP5049467B2 JP5049467B2 (ja) 2012-10-17

Family

ID=34988722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005087085A Expired - Fee Related JP5049467B2 (ja) 2004-03-26 2005-03-24 薄膜トランジスタと薄膜トランジスタ基板とそれらの製造方法

Country Status (4)

Country Link
US (3) US7199399B2 (enExample)
JP (1) JP5049467B2 (enExample)
KR (1) KR101126282B1 (enExample)
TW (1) TWI240950B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
TWI361492B (en) 2008-07-25 2012-04-01 Au Optronics Corp Thin film transistor substrate, electric apparatus, and method for fabricating the same
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US8735207B2 (en) * 2011-04-05 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method to avoid fixed pattern noise within backside illuminated (BSI) complementary metal-oxide-semiconductor (CMOS) sensor array
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
KR101980466B1 (ko) * 2015-03-05 2019-05-20 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 삼차원 물체 생성 기법
CN104900713B (zh) * 2015-06-15 2017-12-08 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示基板、显示装置
KR102526615B1 (ko) * 2018-09-18 2023-04-27 엘지디스플레이 주식회사 박막 트랜지스터와, 이를 포함하는 기판 내장형 드라이버 및 표시 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066416A (ja) * 1983-09-22 1985-04-16 Matsushita Electric Ind Co Ltd 半導体集積回路基体の製造方法
JPH081892B2 (ja) * 1987-06-03 1996-01-10 松下電子工業株式会社 半導体装置の製造方法
JP3472401B2 (ja) * 1996-01-17 2003-12-02 三菱電機株式会社 半導体装置の製造方法
JP3969510B2 (ja) * 1998-08-31 2007-09-05 エルジー フィリップス エルシーディー カンパニー リミテッド 薄膜トランジスタアレイ基板および液晶表示装置
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
JP2001135573A (ja) * 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP2002270507A (ja) * 2001-03-14 2002-09-20 Hitachi Cable Ltd 結晶シリコン層の形成方法および結晶シリコン半導体装置
JP2003008024A (ja) * 2001-06-21 2003-01-10 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及び半導体装置及び表示装置
JP2004063478A (ja) * 2002-04-11 2004-02-26 Fumimasa Yo 薄膜トランジスタ及びその製造方法
AU2003302834A1 (en) * 2002-12-09 2004-06-30 Samsung Electronics Co., Ltd. Display pixel, display apparatus having an image pixel and method of manufacturing display device
JP4593094B2 (ja) * 2003-08-21 2010-12-08 日本電気株式会社 液晶表示装置及びその製造方法

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